公开(公告)号：US20240312941A1

公开(公告)日：2024-09-19

申请号：US18182369

申请日：2023-03-13

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chao-Wei Chiu ,  Wei-Yu Chen ,  Chih-Chiang Tsao ,  Hao-Jan Pei ,  Hsiu-Jen Lin ,  Ching-Hua Hsieh

IPC分类号： H01L23/00 ,  H01L21/56 ,  H01L21/768 ,  H01L25/065

CPC分类号： H01L24/16 ,  H01L21/56 ,  H01L21/76895 ,  H01L24/05 ,  H01L25/0655 ,  H01L2224/051 ,  H01L2224/16135 ,  H01L2224/165

摘要： An electronic apparatus including a package substrate and a structure disposed on and electrically connected to the package substrate through conductive bumps is provided. The material of the conductive bumps includes a bismuth (Bi) containing alloy or an indium (In) containing alloy. In some embodiments, the bismuth (Bi) containing alloy includes Sn—Ag—Cu—Bi alloy. In some embodiments, a concentration of bismuth (Bi) contained in the Sn—Ag—Cu—Bi alloy ranges from about 1 wt % to about 10 wt %. Methods for forming the Sn—Ag—Cu—Bi alloy are also provided.

公开(公告)号：US09881894B2

公开(公告)日：2018-01-30

申请号：US13771825

申请日：2013-02-20

申请人： STATS ChipPAC, Ltd.

发明人： Rajendra D. Pendse

IPC分类号： H01L23/00 ,  H01L23/498 ,  H01L21/56 ,  H01L25/03 ,  H01L25/065 ,  H01L25/00 ,  H01L21/768

CPC分类号： H01L24/81 ,  H01L21/561 ,  H01L21/568 ,  H01L21/76898 ,  H01L23/49811 ,  H01L23/49822 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/19 ,  H01L24/94 ,  H01L24/96 ,  H01L24/97 ,  H01L25/03 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/02379 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/051 ,  H01L2224/05552 ,  H01L2224/05569 ,  H01L2224/05571 ,  H01L2224/056 ,  H01L2224/0603 ,  H01L2224/11 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1145 ,  H01L2224/1146 ,  H01L2224/12105 ,  H01L2224/13022 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/1403 ,  H01L2224/141 ,  H01L2224/14135 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/1703 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/73204 ,  H01L2224/73259 ,  H01L2224/73265 ,  H01L2224/81 ,  H01L2224/81005 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81805 ,  H01L2224/83 ,  H01L2224/94 ,  H01L2224/96 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/18162 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2224/03 ,  H01L2924/00012

摘要： A semiconductor device has a plurality of first semiconductor die with an encapsulant deposited over a first surface of the first semiconductor die and around the first semiconductor die. An insulating layer is formed over the encapsulant and over a second surface of the first semiconductor die opposite the first surface. The insulating layer includes openings over the first semiconductor die. A first conductive layer is formed over the first semiconductor die within the openings. A second conductive layer is formed over the first conductive layer to form vertical conductive vias. A second semiconductor die is disposed over the first semiconductor die and electrically connected to the first conductive layer. A bump is formed over the second conductive layer outside a footprint of the first semiconductor die. The second semiconductor die is disposed over an active surface or a back surface of the first semiconductor die.

公开(公告)号：US09803111B2

公开(公告)日：2017-10-31

申请号：US14379961

申请日：2012-10-01

申请人： HITACHI CHEMICAL COMPANY, LTD.

发明人： Kazutaka Honda ,  Akira Nagai ,  Makoto Satou

IPC分类号： H01L23/48 ,  H01L21/16 ,  C09J11/06 ,  B23K35/36 ,  B23K35/362 ,  H01L25/065 ,  H05K3/30 ,  H01L23/29 ,  H01L21/56 ,  C09J163/00 ,  C08K5/092 ,  H01L23/00 ,  H05K3/34

CPC分类号： C09J11/06 ,  B23K35/3613 ,  B23K35/3618 ,  B23K35/362 ,  C08K5/092 ,  C09J163/00 ,  H01L21/563 ,  H01L23/295 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L25/0657 ,  H01L2224/03825 ,  H01L2224/0401 ,  H01L2224/051 ,  H01L2224/05111 ,  H01L2224/05116 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05575 ,  H01L2224/0558 ,  H01L2224/056 ,  H01L2224/05611 ,  H01L2224/05616 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/11825 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13575 ,  H01L2224/1358 ,  H01L2224/136 ,  H01L2224/13611 ,  H01L2224/13639 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/13655 ,  H01L2224/16145 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/17181 ,  H01L2224/271 ,  H01L2224/27416 ,  H01L2224/27436 ,  H01L2224/27848 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29386 ,  H01L2224/29387 ,  H01L2224/2939 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/33181 ,  H01L2224/73104 ,  H01L2224/81011 ,  H01L2224/81121 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2224/81895 ,  H01L2224/81907 ,  H01L2224/831 ,  H01L2224/83191 ,  H01L2224/83203 ,  H01L2224/83855 ,  H01L2224/83862 ,  H01L2224/9205 ,  H01L2224/92122 ,  H01L2224/92125 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/10253 ,  H05K3/305 ,  H05K3/3436 ,  H05K2201/0367 ,  H05K2201/10977 ,  Y02P70/613 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2224/8385 ,  H01L2924/00 ,  C08L63/00 ,  H01L2224/27 ,  H01L2924/01047 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01029 ,  H01L2224/11 ,  H01L2924/0001

摘要： An adhesive for a semiconductor, comprising an epoxy resin, a curing agent, and a compound having a group represented by the following formula (1): wherein R1 represents an electron-donating group.

公开(公告)号：US09793198B2

公开(公告)日：2017-10-17

申请号：US14275519

申请日：2014-05-12

申请人： Invensas Corporation

发明人： Cyprian Emeka Uzoh ,  Rajesh Katkar

IPC分类号： H01L23/498 ,  B23K35/22 ,  B23K35/02 ,  B32B15/01 ,  H01L23/31 ,  H01L21/48 ,  H01L21/56 ,  H01L23/00 ,  H01L25/065 ,  H01L25/10 ,  H01L25/00 ,  B23K1/00 ,  B23K101/40

CPC分类号： H01L23/49811 ,  B23K1/0016 ,  B23K35/0244 ,  B23K35/0266 ,  B23K35/22 ,  B23K2101/40 ,  B32B15/01 ,  H01L21/4853 ,  H01L21/56 ,  H01L21/563 ,  H01L21/565 ,  H01L23/3114 ,  H01L23/3135 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/19 ,  H01L24/20 ,  H01L24/24 ,  H01L24/73 ,  H01L24/742 ,  H01L24/81 ,  H01L24/82 ,  H01L24/83 ,  H01L24/98 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/03 ,  H01L2224/03001 ,  H01L2224/03009 ,  H01L2224/03318 ,  H01L2224/0332 ,  H01L2224/0333 ,  H01L2224/03334 ,  H01L2224/0348 ,  H01L2224/03848 ,  H01L2224/03849 ,  H01L2224/039 ,  H01L2224/03901 ,  H01L2224/0391 ,  H01L2224/04105 ,  H01L2224/05022 ,  H01L2224/051 ,  H01L2224/05294 ,  H01L2224/05547 ,  H01L2224/05567 ,  H01L2224/05573 ,  H01L2224/05582 ,  H01L2224/056 ,  H01L2224/05794 ,  H01L2224/05839 ,  H01L2224/05844 ,  H01L2224/05847 ,  H01L2224/05855 ,  H01L2224/0603 ,  H01L2224/06102 ,  H01L2224/10145 ,  H01L2224/11001 ,  H01L2224/11005 ,  H01L2224/11009 ,  H01L2224/111 ,  H01L2224/11318 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/11848 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/11901 ,  H01L2224/1191 ,  H01L2224/13005 ,  H01L2224/13017 ,  H01L2224/13018 ,  H01L2224/13021 ,  H01L2224/13022 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13116 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13169 ,  H01L2224/1319 ,  H01L2224/13294 ,  H01L2224/133 ,  H01L2224/13339 ,  H01L2224/13344 ,  H01L2224/13347 ,  H01L2224/13355 ,  H01L2224/13561 ,  H01L2224/13562 ,  H01L2224/13565 ,  H01L2224/136 ,  H01L2224/13609 ,  H01L2224/13611 ,  H01L2224/1403 ,  H01L2224/16058 ,  H01L2224/16059 ,  H01L2224/16145 ,  H01L2224/16147 ,  H01L2224/16148 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/1701 ,  H01L2224/1703 ,  H01L2224/17181 ,  H01L2224/17505 ,  H01L2224/2101 ,  H01L2224/211 ,  H01L2224/2401 ,  H01L2224/2402 ,  H01L2224/24137 ,  H01L2224/24146 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/73267 ,  H01L2224/75253 ,  H01L2224/81 ,  H01L2224/81138 ,  H01L2224/81141 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/8121 ,  H01L2224/8122 ,  H01L2224/81224 ,  H01L2224/81815 ,  H01L2224/82005 ,  H01L2224/82101 ,  H01L2224/82102 ,  H01L2224/82105 ,  H01L2224/83 ,  H01L2224/8385 ,  H01L2224/9211 ,  H01L2225/06513 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/07025 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/15321 ,  H01L2924/3512 ,  H01L2924/381 ,  H01L2924/3841

摘要： A solder connection may be surrounded by a solder locking layer (1210, 2210) and may be recessed in a hole (1230) in that layer. The recess may be obtained by evaporating a vaporizable portion (1250) of the solder connection. Other features are also provided.

公开(公告)号：US09748191B2

公开(公告)日：2017-08-29

申请号：US15264588

申请日：2016-09-13

申请人： Renesas Electronics Corporation

发明人： Shinya Suzuki

IPC分类号： H01L23/485 ,  H01L23/498 ,  H01L23/52 ,  H01L23/528 ,  H01L23/00 ,  H01L21/768 ,  H01L23/522 ,  G02F1/1345 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/311 ,  H01L27/13 ,  G02F1/133 ,  G02F1/1333 ,  G02F1/1343 ,  H01L29/78 ,  G02F1/1362 ,  G02F1/1368

CPC分类号： H01L24/14 ,  G02F1/13306 ,  G02F1/133345 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/1345 ,  G02F1/13458 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133302 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/31055 ,  H01L21/31111 ,  H01L21/768 ,  H01L21/76819 ,  H01L23/485 ,  H01L23/522 ,  H01L23/528 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/81 ,  H01L24/83 ,  H01L27/13 ,  H01L29/7833 ,  H01L2224/02122 ,  H01L2224/0345 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05073 ,  H01L2224/05075 ,  H01L2224/051 ,  H01L2224/05144 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05184 ,  H01L2224/05553 ,  H01L2224/056 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/13005 ,  H01L2224/13006 ,  H01L2224/13009 ,  H01L2224/13013 ,  H01L2224/13022 ,  H01L2224/13027 ,  H01L2224/13144 ,  H01L2224/14153 ,  H01L2224/16225 ,  H01L2224/271 ,  H01L2224/2929 ,  H01L2224/29355 ,  H01L2224/29444 ,  H01L2224/32225 ,  H01L2224/81 ,  H01L2224/81191 ,  H01L2224/8185 ,  H01L2224/83101 ,  H01L2224/83203 ,  H01L2224/83851 ,  H01L2224/9211 ,  H01L2224/93 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01057 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/04941 ,  H01L2924/05042 ,  H01L2924/05442 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1426 ,  H01L2924/15788 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2224/11 ,  H01L2224/83 ,  H01L2924/00

摘要： A technique which improves the reliability in coupling between a bump electrode of a semiconductor chip and wiring of a mounting substrate, more particularly a technique which guarantees the flatness of a bump electrode even when wiring lies in a top wiring layer under the bump electrode, thereby improving the reliability in coupling between the bump electrode and the wiring formed on a glass substrate. Wiring, comprised of a power line or signal line, and a dummy pattern are formed in a top wiring layer beneath a non-overlap region of a bump electrode. The dummy pattern is located to fill the space between wirings to reduce irregularities caused by the wirings and space in the top wiring layer. A surface protection film formed to cover the top wiring layer is flattened by CMP.

公开(公告)号：US09728489B2

公开(公告)日：2017-08-08

申请号：US14527534

申请日：2014-10-29

申请人： Elwha LLC

发明人： William David Duncan ,  Roderick A. Hyde ,  Jordin T. Kare ,  Thomas M. McWilliams ,  Thomas Allan Weaver ,  Lowell L. Wood, Jr.

IPC分类号： H01L23/00 ,  H01L23/48 ,  H01F38/14

CPC分类号： H01L23/48 ,  H01F2038/146 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/05026 ,  H01L2224/05082 ,  H01L2224/051 ,  H01L2224/05571 ,  H01L2224/05686 ,  H01L2224/10145 ,  H01L2224/11013 ,  H01L2224/11318 ,  H01L2224/11424 ,  H01L2224/11444 ,  H01L2224/13019 ,  H01L2224/13023 ,  H01L2224/13186 ,  H01L2224/1319 ,  H01L2224/13194 ,  H01L2224/13286 ,  H01L2224/1329 ,  H01L2224/133 ,  H01L2224/14164 ,  H01L2224/81007 ,  H01L2224/81101 ,  H01L2224/81141 ,  H01L2224/81143 ,  H01L2224/81191 ,  H01L2224/81385 ,  H01L2224/8181 ,  H01L2224/819 ,  H01L2225/06531 ,  H01L2924/00012 ,  H01L2924/00014

摘要： Inter-substrate coupling and alignment using liquid droplets can include electrical and plasmon modalities. For example, a set of droplets can be placed on a bottom substrate. A top substrate can be placed upon the droplets, which uses the droplets to align the substrates. Using the droplets in a capacitive or plasmon coupling modality, information or power can be transferred between the substrates using the droplets.

公开(公告)号：US09620428B2

公开(公告)日：2017-04-11

申请号：US15217777

申请日：2016-07-22

申请人： Monolith Semiconductor Inc.

发明人： Kevin Matocha ,  John Nowak ,  Kiran Chatty ,  Sujit Banerjee

IPC分类号： H01L29/45 ,  H01L23/26 ,  H01L23/00 ,  H01L29/16 ,  H01L29/78 ,  H01L21/283 ,  H01L23/31 ,  H01L29/10 ,  H01L21/04 ,  H01L29/66 ,  H01L29/08 ,  H01L21/8234

CPC分类号： H01L23/26 ,  H01L21/0445 ,  H01L21/0485 ,  H01L21/283 ,  H01L21/823475 ,  H01L23/3171 ,  H01L23/3192 ,  H01L23/564 ,  H01L24/05 ,  H01L29/0615 ,  H01L29/0843 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/45 ,  H01L29/66068 ,  H01L29/66893 ,  H01L29/7395 ,  H01L29/744 ,  H01L29/7811 ,  H01L29/7823 ,  H01L29/8083 ,  H01L29/872 ,  H01L2224/02166 ,  H01L2224/051 ,  H01L2224/05111 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/0517 ,  H01L2224/05172 ,  H01L2224/05184 ,  H01L2224/0519 ,  H01L2224/05567 ,  H01L2924/00014 ,  H01L2924/10272 ,  H01L2924/12032 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13062 ,  H01L2924/13063 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/05552

摘要： Semiconductor devices comprising a getter material are described. The getter material can be located in or over the active region of the device and/or in or over a termination region of the device. The getter material can be a conductive or an insulating material. The getter material can be present as a continuous or discontinuous film. The device can be a SiC semiconductor device such as a SiC vertical MOSFET. Methods of making the devices are also described. Semiconductor devices and methods of making the same comprising source ohmic contacts formed using a self-aligned process are also described. The source ohmic contacts can comprise titanium silicide and/or titanium silicide carbide and can act as a getter material.

公开(公告)号：US09437566B2

公开(公告)日：2016-09-06

申请号：US14275514

申请日：2014-05-12

申请人： Invensas Corporation

发明人： Rajesh Katkar ,  Cyprian Emeka Uzoh

IPC分类号： H01L21/44 ,  H01L23/00 ,  H05K3/34 ,  H05K1/11 ,  H05K1/14 ,  B23K26/32 ,  B23K3/06 ,  B23K35/02 ,  H01L23/31 ,  H01L23/498 ,  H01L21/48 ,  H01L21/56 ,  H01L25/065 ,  H01L25/10 ,  H01L25/00 ,  H01L21/02 ,  B23K1/00

CPC分类号： H01L24/14 ,  B23K1/0016 ,  B23K3/0623 ,  B23K35/0244 ,  B23K35/0266 ,  B23K2101/40 ,  H01L21/02225 ,  H01L21/4853 ,  H01L21/56 ,  H01L21/563 ,  H01L21/565 ,  H01L23/3114 ,  H01L23/3135 ,  H01L23/49811 ,  H01L23/49816 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/73 ,  H01L24/742 ,  H01L24/81 ,  H01L24/83 ,  H01L24/98 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/03318 ,  H01L2224/0332 ,  H01L2224/0333 ,  H01L2224/0391 ,  H01L2224/05022 ,  H01L2224/05073 ,  H01L2224/0508 ,  H01L2224/051 ,  H01L2224/05567 ,  H01L2224/056 ,  H01L2224/06102 ,  H01L2224/10145 ,  H01L2224/11001 ,  H01L2224/11005 ,  H01L2224/11009 ,  H01L2224/111 ,  H01L2224/11318 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/1191 ,  H01L2224/13005 ,  H01L2224/13017 ,  H01L2224/13018 ,  H01L2224/13021 ,  H01L2224/13022 ,  H01L2224/13078 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13084 ,  H01L2224/131 ,  H01L2224/13116 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13169 ,  H01L2224/1319 ,  H01L2224/13561 ,  H01L2224/13562 ,  H01L2224/136 ,  H01L2224/13609 ,  H01L2224/13611 ,  H01L2224/1405 ,  H01L2224/16058 ,  H01L2224/16059 ,  H01L2224/16145 ,  H01L2224/16147 ,  H01L2224/16148 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/1701 ,  H01L2224/1703 ,  H01L2224/17181 ,  H01L2224/17505 ,  H01L2224/2919 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/75253 ,  H01L2224/81138 ,  H01L2224/81141 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/8121 ,  H01L2224/8122 ,  H01L2224/81224 ,  H01L2224/81815 ,  H01L2224/81825 ,  H01L2224/8385 ,  H01L2224/9211 ,  H01L2225/06513 ,  H01L2924/14 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/15321 ,  H01L2924/3512 ,  H01L2924/381 ,  H01L2924/3841 ,  H05K1/115 ,  H05K1/144 ,  H05K3/341 ,  H05K2201/09572 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/07025 ,  H01L2224/81 ,  H01L2224/83

摘要： In some embodiments, to increase the height-to-pitch ratio of a solder connection that connects different structures with one or more solder balls, only a portion of a solder ball's surface is melted when the connection is formed on one structure and/or when the connection is being attached to another structure. In some embodiments, non-solder balls are joined by an intermediate solder ball (140i). A solder connection may be surrounded by a solder locking layer (1210) and may be recessed in a hole (1230) in that layer. Other features are also provided.

摘要翻译： 在一些实施例中，为了增加将不同结构与一个或多个焊球连接的焊料连接的高度与间距比，当连接形成在一个结构上时和/或当 连接正在附加到另一个结构。 在一些实施例中，非焊球通过中间焊球（140i）连接。 焊料连接可以被焊料锁定层（1210）包围，并且可以凹陷在该层中的孔（1230）中。 还提供其他功能。

公开(公告)号：US09337049B1

公开(公告)日：2016-05-10

申请号：US14694256

申请日：2015-04-23

申请人： NIKO SEMICONDUCTOR CO., LTD. ,  SUPER GROUP SEMICONDUCTOR CO., LTD.

发明人： Chih Cheng Hsieh ,  Hsiu Wen Hsu

IPC分类号： H01L21/56 ,  H01L21/304 ,  H01L21/306 ,  H01L21/78 ,  H01L29/78 ,  H01L21/768 ,  H01L21/48

CPC分类号： H01L21/4842 ,  H01L21/561 ,  H01L21/76898 ,  H01L23/3114 ,  H01L23/481 ,  H01L23/49513 ,  H01L23/49541 ,  H01L23/525 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/94 ,  H01L29/4175 ,  H01L2224/02331 ,  H01L2224/02372 ,  H01L2224/02377 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/051 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05548 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05567 ,  H01L2224/05582 ,  H01L2224/05583 ,  H01L2224/056 ,  H01L2224/05639 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/0603 ,  H01L2224/06051 ,  H01L2224/06181 ,  H01L2224/1147 ,  H01L2224/13008 ,  H01L2224/13009 ,  H01L2224/13013 ,  H01L2224/13022 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/1403 ,  H01L2224/14051 ,  H01L2224/29111 ,  H01L2224/2929 ,  H01L2224/32245 ,  H01L2224/83191 ,  H01L2224/83855 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/13091 ,  H01L2224/03 ,  H01L2224/11 ,  H01L2924/01014 ,  H01L2924/00014 ,  H01L2224/83

摘要： A manufacturing method of wafer level chip scale package structure is provided. Firstly, a wafer including a plurality of semiconductor devices is provided. An active surface of one of the semiconductor devices has an active an active region and an outer region. A first electrode and a second electrode are arranged on the active region, and the outer region has a cutting portion and a channel portion. Next, a patterned protecting layer having a plurality of openings is formed on the active surface to respectively expose the first and second electrodes and channel portion. Subsequently, a wafer back thinning process is performed and then a back electrode layer is deposited. Subsequently, the channel portion is etched to form a trench exposing the back electrode layer, and a conductive structure connected to the back electrode layer is formed through the trench. Thereafter, the wafer is cut along the cutting portion.

摘要翻译： 提供了晶片级芯片级封装结构的制造方法。 首先，提供包括多个半导体器件的晶片。 半导体器件中的一个的有源表面具有活性区域和外部区域。 第一电极和第二电极布置在有源区域上，外部区域具有切割部分和通道部分。 接下来，在有源表面上形成具有多个开口的图案化保护层，以分别暴露第一和第二电极和沟道部分。 随后，进行晶片背面薄化处理，然后沉积背面电极层。 随后，蚀刻通道部分以形成露出背电极层的沟槽，并且通过沟槽形成连接到背电极层的导电结构。 此后，沿着切割部分切割晶片。

公开(公告)号：US20160086926A1

公开(公告)日：2016-03-24

申请号：US14959500

申请日：2015-12-04

申请人： Micron Technology, Inc.

发明人： David S. Pratt ,  Kyle K. Kirby ,  Dewali Ray

IPC分类号： H01L25/065 ,  H01L23/498

CPC分类号： H01L25/0657 ,  H01L21/76898 ,  H01L23/49811 ,  H01L23/49827 ,  H01L23/49838 ,  H01L25/043 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05026 ,  H01L2224/051 ,  H01L2224/05548 ,  H01L2224/05572 ,  H01L2224/056 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06544 ,  H01L2225/06555 ,  H01L2924/01019 ,  H01L2924/00014

摘要： Pass-through interconnect structures for microelectronic dies and associated systems and methods are disclosed herein. In one embodiment, a microelectronic die assembly includes a support substrate, a first microelectronic die positioned at least partially over the support substrate, and a second microelectronic die positioned at least partially over the first die. The first die includes a semiconductor substrate, a conductive trace extending over a portion of the semiconductor substrate, a substrate pad between the trace and the portion of the semiconductor substrate, and a through-silicon via (TSV) extending through the trace, the substrate pad, and the portion of the semiconductor substrate. The second die is electrically coupled to the support substrate via a conductive path that includes the TSV.

摘要翻译： 本文公开了用于微电子管芯的直通互连结构以及相关联的系统和方法。 在一个实施例中，微电子管芯组件包括支撑衬底，至少部分地位于支撑衬底上方的第一微电子管芯，以及至少部分地位于第一管芯上方的第二微电子管芯。 所述第一裸片包括半导体衬底，在所述半导体衬底的一部分上延伸的导电迹线，所述迹线与所述半导体衬底的所述部分之间的衬底焊盘以及穿过所述迹线的穿硅通孔（TSV），所述衬底 衬垫和半导体衬底的部分。 第二管芯经由包括TSV的导电路径电耦合到支撑衬底。