公开(公告)号：US20190198376A1

公开(公告)日：2019-06-27

申请号：US16293201

申请日：2019-03-05

申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

发明人： Darrell D. TRUHITTE ,  James P. LETTERMAN, JR.

IPC分类号： H01L21/683 ,  H01L23/00 ,  H01L23/31 ,  H01L21/48 ,  H01L21/56

CPC分类号： H01L21/6835 ,  H01L21/4832 ,  H01L21/561 ,  H01L21/568 ,  H01L21/6836 ,  H01L21/78 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/36 ,  H01L23/49537 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/48 ,  H01L24/49 ,  H01L24/75 ,  H01L24/81 ,  H01L24/83 ,  H01L24/85 ,  H01L24/92 ,  H01L24/94 ,  H01L24/95 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/105 ,  H01L2221/68304 ,  H01L2221/68327 ,  H01L2221/68377 ,  H01L2221/68381 ,  H01L2224/04105 ,  H01L2224/11 ,  H01L2224/11003 ,  H01L2224/11312 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/11418 ,  H01L2224/1146 ,  H01L2224/11462 ,  H01L2224/116 ,  H01L2224/119 ,  H01L2224/1308 ,  H01L2224/131 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13166 ,  H01L2224/1319 ,  H01L2224/16245 ,  H01L2224/16258 ,  H01L2224/27003 ,  H01L2224/27312 ,  H01L2224/2732 ,  H01L2224/27334 ,  H01L2224/27418 ,  H01L2224/2746 ,  H01L2224/27462 ,  H01L2224/276 ,  H01L2224/279 ,  H01L2224/2908 ,  H01L2224/291 ,  H01L2224/29124 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/29164 ,  H01L2224/29166 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/32258 ,  H01L2224/33181 ,  H01L2224/45015 ,  H01L2224/48091 ,  H01L2224/4811 ,  H01L2224/48111 ,  H01L2224/48145 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/49109 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/75251 ,  H01L2224/75252 ,  H01L2224/753 ,  H01L2224/75755 ,  H01L2224/75756 ,  H01L2224/81192 ,  H01L2224/8121 ,  H01L2224/81805 ,  H01L2224/81815 ,  H01L2224/81856 ,  H01L2224/83 ,  H01L2224/83005 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/8321 ,  H01L2224/83805 ,  H01L2224/83815 ,  H01L2224/83856 ,  H01L2224/85005 ,  H01L2224/92 ,  H01L2224/92125 ,  H01L2224/92147 ,  H01L2224/92227 ,  H01L2224/94 ,  H01L2224/95 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2924/0665 ,  H01L2924/014 ,  H01L2224/81 ,  H01L2224/27 ,  H01L2224/85 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2924/207

摘要： Methods of manufacturing semiconductor packages. Implementations may include: providing a substrate with a first side, a second side, and a thickness; forming a plurality of pads on the first side of the substrate; and applying die attach material to the plurality of pads. The method may include bonding a wafer including a plurality of semiconductor die to the substrate at one or more die pads included in each die. The method may also include singulating the plurality of semiconductor die, overmolding the plurality of semiconductor die and the first side of the substrate with an overmold material, and removing the substrate to expose the plurality of pads and to form a plurality of semiconductor packages coupled together through the overmold material. The method also may include singulating the plurality of semiconductor packages to separate them.

公开(公告)号：US10020281B2

公开(公告)日：2018-07-10

申请号：US15251520

申请日：2016-08-30

申请人： International Business Machines Corporation

发明人： Chih-Chao Yang

IPC分类号： H01L21/00 ,  H01L23/00 ,  H01L25/065 ,  H01L25/00

CPC分类号： H01L24/80 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/02205 ,  H01L2224/02215 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03616 ,  H01L2224/03848 ,  H01L2224/039 ,  H01L2224/05011 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05184 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/11009 ,  H01L2224/1141 ,  H01L2224/11428 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11616 ,  H01L2224/11848 ,  H01L2224/119 ,  H01L2224/13124 ,  H01L2224/13147 ,  H01L2224/13184 ,  H01L2224/80004 ,  H01L2224/80203 ,  H01L2224/80895 ,  H01L2224/81203 ,  H01L2224/81895 ,  H01L2225/06524 ,  H01L2924/00015 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/0529 ,  H01L2224/45099 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/1147 ,  H01L2224/114 ,  H01L2224/0347 ,  H01L2224/034 ,  H01L2224/03009 ,  H01L2224/131 ,  H01L2924/014

摘要： Methods and semiconductor devices for bonding a first semiconductor device to a second semiconductor device include forming metal pads including a textured microstructure having a columnar grain structure at substantially the same angular direction from the top surface to the bottom surface. The textured crystalline microstructures enables the use of low temperatures and low pressures to effect bonding of the metal pads. Also described are methods of packaging and semiconductor devices.

公开(公告)号：US09935072B2

公开(公告)日：2018-04-03

申请号：US15291063

申请日：2016-10-11

申请人： SFA SEMICON CO., LTD.

发明人： Byeong Ho Jeong ,  Eun Dong Kim ,  Jong Won Lee ,  Hyun Hak Jung ,  Jai Kyoung Choi

IPC分类号： H01L23/52 ,  H01L23/00 ,  H01L25/065 ,  H01L25/00

CPC分类号： H01L24/16 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0231 ,  H01L2224/02311 ,  H01L2224/02313 ,  H01L2224/02331 ,  H01L2224/0239 ,  H01L2224/024 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/03612 ,  H01L2224/03614 ,  H01L2224/03616 ,  H01L2224/03912 ,  H01L2224/03914 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05569 ,  H01L2224/05571 ,  H01L2224/05572 ,  H01L2224/056 ,  H01L2224/05611 ,  H01L2224/10145 ,  H01L2224/10175 ,  H01L2224/11005 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/1191 ,  H01L2224/13017 ,  H01L2224/13021 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/1601 ,  H01L2224/16014 ,  H01L2224/16111 ,  H01L2224/16112 ,  H01L2224/16147 ,  H01L2224/16237 ,  H01L2224/27436 ,  H01L2224/2919 ,  H01L2224/29191 ,  H01L2224/3201 ,  H01L2224/32058 ,  H01L2224/32145 ,  H01L2224/73103 ,  H01L2224/73104 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/814 ,  H01L2224/81815 ,  H01L2224/8192 ,  H01L2224/83104 ,  H01L2224/83191 ,  H01L2224/83855 ,  H01L2224/83862 ,  H01L2224/8388 ,  H01L2224/9211 ,  H01L2224/9212 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06558 ,  H01L2924/3512 ,  H01L2924/381 ,  H01L2924/3841 ,  H01L2924/014 ,  H01L2924/01029 ,  H01L2924/00014 ,  H01L2224/05647 ,  H01L2924/01074 ,  H01L2924/01047 ,  H01L2924/01082 ,  H01L2924/0103 ,  H01L2924/01083 ,  H01L2924/01049 ,  H01L2924/01044 ,  H01L2924/01051 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/00012 ,  H01L2924/0665 ,  H01L2924/095 ,  H01L2924/07025 ,  H01L2924/0715 ,  H01L2924/0685 ,  H01L2924/0695 ,  H01L2224/119 ,  H01L2224/03444 ,  H01L2224/0346 ,  H01L2224/1146 ,  H01L2224/0361 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/06 ,  H01L2224/11 ,  H01L2224/27 ,  H01L2924/07802

摘要： The present disclosure provides a semiconductor package that prevents a bump bridge from being formed between adjacent conductive bumps to realize a fine bump pitch when each unit circuit part is directly stacked without using a printed circuit board and a method for manufacturing the same. The semiconductor package includes a first semiconductor chip structure including a first unit circuit part, a first passivation layer disposed on the first unit circuit part, and a conductive bump electrically connected to the first unit circuit part, and a second semiconductor chip structure including a second unit circuit part, a second passivation layer having a stepped portion that is recessed inward and disposed on the second unit circuit part, and a bump pad provided in the stepped portion. The first semiconductor chip structure and the second semiconductor chip structure are stacked to allow the conductive bump to be bonded to the bump pad within the stepped portion.

公开(公告)号：US09935044B2

公开(公告)日：2018-04-03

申请号：US15092256

申请日：2016-04-06

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： Hsiu-Jen Lin ,  Wen-Hsiung Lu ,  Cheng-Ting Chen ,  Hsuan-Ting Kuo ,  Wei-Yu Chen ,  Ming-Da Cheng ,  Chung-Shi Liu

IPC分类号： H01L23/48 ,  H01L23/498 ,  H01L23/00 ,  H01L23/31 ,  H05K3/34 ,  H05K1/11 ,  H01L21/56

CPC分类号： H01L23/49816 ,  H01L21/563 ,  H01L23/3114 ,  H01L23/49838 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/92 ,  H01L2224/02377 ,  H01L2224/02379 ,  H01L2224/0239 ,  H01L2224/0382 ,  H01L2224/03829 ,  H01L2224/03849 ,  H01L2224/0391 ,  H01L2224/0401 ,  H01L2224/05024 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05184 ,  H01L2224/05568 ,  H01L2224/05794 ,  H01L2224/05811 ,  H01L2224/10125 ,  H01L2224/11005 ,  H01L2224/11334 ,  H01L2224/119 ,  H01L2224/1191 ,  H01L2224/13006 ,  H01L2224/13014 ,  H01L2224/13017 ,  H01L2224/13018 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/131 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13117 ,  H01L2224/1312 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/14131 ,  H01L2224/16058 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2224/2919 ,  H01L2224/32058 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/812 ,  H01L2224/8121 ,  H01L2224/8123 ,  H01L2224/81815 ,  H01L2224/9212 ,  H01L2924/0105 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/351 ,  H05K1/111 ,  H05K3/34 ,  H01L2924/00 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/00014 ,  H01L2924/01032 ,  H01L2924/01051 ,  H01L2924/01083 ,  H01L2924/01084 ,  H01L2924/01031 ,  H01L2924/01049 ,  H01L2924/01081 ,  H01L2924/00012 ,  H01L2924/01082 ,  H01L2924/01013 ,  H01L2924/01079 ,  H01L2924/01028 ,  H01L2924/01074

摘要： The present disclosure provides a semiconductor package includes a contact pad, a device external to the contact pad and a solder bump on the contact pad. The device has a conductive contact pad corresponding to the contact pad. The solder bump connects the contact pad with the conductive contact pad. The solder bump comprises a height from a top of the solder bump to the contact pad; and a width which is a widest dimension of the solder bump in a direction perpendicular to the height. A junction portion of the solder bump in proximity to the contact pad comprises an hourglass shape.

公开(公告)号：US09922960B2

公开(公告)日：2018-03-20

申请号：US15196170

申请日：2016-06-29

申请人： SHINKO ELECTRIC INDUSTRIES CO., LTD.

发明人： Sumihiro Ichikawa

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L25/065 ,  H01L23/00 ,  H01L25/00

CPC分类号： H01L25/0657 ,  H01L23/49811 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L24/97 ,  H01L25/50 ,  H01L2224/036 ,  H01L2224/0401 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/1184 ,  H01L2224/11845 ,  H01L2224/119 ,  H01L2224/13014 ,  H01L2224/13082 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/1403 ,  H01L2224/14051 ,  H01L2224/14131 ,  H01L2224/14136 ,  H01L2224/14179 ,  H01L2224/14505 ,  H01L2224/16145 ,  H01L2224/16148 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/1701 ,  H01L2224/2929 ,  H01L2224/29387 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81065 ,  H01L2224/81143 ,  H01L2224/81193 ,  H01L2224/812 ,  H01L2224/81205 ,  H01L2224/81815 ,  H01L2224/81895 ,  H01L2224/81906 ,  H01L2224/81907 ,  H01L2224/81986 ,  H01L2224/83104 ,  H01L2224/83862 ,  H01L2224/83895 ,  H01L2224/92125 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06565 ,  H01L2225/06593 ,  H01L2924/00015 ,  H01L2924/14 ,  H05K3/328 ,  H05K3/368 ,  H05K3/4007 ,  H05K2203/167 ,  H01L2924/00012 ,  H01L2924/01083 ,  H01L2924/0103 ,  H01L2924/00014 ,  H01L2224/81121 ,  H01L2224/81 ,  H01L2924/0665 ,  H01L2924/05442 ,  H01L2224/034 ,  H01L2224/113 ,  H01L2224/81203 ,  H01L2224/81201 ,  H01L2924/00

摘要： A packaging structure includes a first substrate including a first metal terminal and a second metal terminal whose height is lower than the height of the first metal terminal; and a second substrate including a third metal terminal and a fourth metal terminal whose height is lower than the height of the third metal terminal, the second substrate being provided on the first substrate, the first metal terminal and the third metal terminal being directly bonded with each other, and the second metal terminal and the fourth metal terminal being bonded via a connection portion.

公开(公告)号：US20180061804A1

公开(公告)日：2018-03-01

申请号：US15251520

申请日：2016-08-30

申请人： International Business Machines Corporation

发明人： CHIH-CHAO YANG

IPC分类号： H01L23/00 ,  H01L25/065 ,  H01L25/00

CPC分类号： H01L24/80 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/02205 ,  H01L2224/02215 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03616 ,  H01L2224/03848 ,  H01L2224/039 ,  H01L2224/05011 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05184 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/11009 ,  H01L2224/1141 ,  H01L2224/11428 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11616 ,  H01L2224/11848 ,  H01L2224/119 ,  H01L2224/13124 ,  H01L2224/13147 ,  H01L2224/13184 ,  H01L2224/80004 ,  H01L2224/80203 ,  H01L2224/80895 ,  H01L2224/81203 ,  H01L2224/81895 ,  H01L2225/06524 ,  H01L2924/00015 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/0529 ,  H01L2224/45099 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/1147 ,  H01L2224/114 ,  H01L2224/0347 ,  H01L2224/034 ,  H01L2224/03009 ,  H01L2224/131 ,  H01L2924/014

摘要： Methods and semiconductor devices for bonding a first semiconductor device to a second semiconductor device include forming metal pads including a textured microstructure having a columnar grain structure at substantially the same angular direction from the top surface to the bottom surface. The textured crystalline microstructures enables the use of low temperatures and low pressures to effect bonding of the metal pads. Also described are methods of packaging and semiconductor devices.

公开(公告)号：US09893036B2

公开(公告)日：2018-02-13

申请号：US15060505

申请日：2016-03-03

申请人： Toshiba Memory Corporation

发明人： Koji Ogiso ,  Kazuhiro Murakami ,  Tatsuo Migita

IPC分类号： H01L25/065 ,  H01L23/00 ,  H01L23/48 ,  H01L25/00 ,  H01L23/522 ,  H01L23/532

CPC分类号： H01L25/0657 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/5226 ,  H01L23/53238 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/81 ,  H01L25/50 ,  H01L2224/03614 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05073 ,  H01L2224/05085 ,  H01L2224/05166 ,  H01L2224/0557 ,  H01L2224/05647 ,  H01L2224/10135 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/119 ,  H01L2224/13025 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/13155 ,  H01L2224/14181 ,  H01L2224/16058 ,  H01L2224/16146 ,  H01L2224/81139 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06544 ,  H01L2225/06565 ,  H01L2225/06593 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0132 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2224/034 ,  H01L2224/113

摘要： A semiconductor device includes a first substrate, an aluminum pad, a first nickel electrode, a second substrate, a second nickel electrode, and a connection layer. The first substrate includes a wiring therein. The aluminum pad is provided adjacent to a surface layer of the first substrate and is connected to the wiring. A portion of the first nickel electrode extends inwardly of the first substrate and is connected to the aluminum pad. A top surface of the first nickel electrode projects from a surface of the first substrate. A portion of the second nickel electrode extends inwardly of the second substrate. A top surface of the second nickel electrode projects from a surface of the second substrate facing the first substrate. The connection layer comprises an alloy including tin and connects the first nickel electrode and the second nickel electrode.

公开(公告)号：US09793198B2

公开(公告)日：2017-10-17

申请号：US14275519

申请日：2014-05-12

申请人： Invensas Corporation

发明人： Cyprian Emeka Uzoh ,  Rajesh Katkar

IPC分类号： H01L23/498 ,  B23K35/22 ,  B23K35/02 ,  B32B15/01 ,  H01L23/31 ,  H01L21/48 ,  H01L21/56 ,  H01L23/00 ,  H01L25/065 ,  H01L25/10 ,  H01L25/00 ,  B23K1/00 ,  B23K101/40

CPC分类号： H01L23/49811 ,  B23K1/0016 ,  B23K35/0244 ,  B23K35/0266 ,  B23K35/22 ,  B23K2101/40 ,  B32B15/01 ,  H01L21/4853 ,  H01L21/56 ,  H01L21/563 ,  H01L21/565 ,  H01L23/3114 ,  H01L23/3135 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/19 ,  H01L24/20 ,  H01L24/24 ,  H01L24/73 ,  H01L24/742 ,  H01L24/81 ,  H01L24/82 ,  H01L24/83 ,  H01L24/98 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/03 ,  H01L2224/03001 ,  H01L2224/03009 ,  H01L2224/03318 ,  H01L2224/0332 ,  H01L2224/0333 ,  H01L2224/03334 ,  H01L2224/0348 ,  H01L2224/03848 ,  H01L2224/03849 ,  H01L2224/039 ,  H01L2224/03901 ,  H01L2224/0391 ,  H01L2224/04105 ,  H01L2224/05022 ,  H01L2224/051 ,  H01L2224/05294 ,  H01L2224/05547 ,  H01L2224/05567 ,  H01L2224/05573 ,  H01L2224/05582 ,  H01L2224/056 ,  H01L2224/05794 ,  H01L2224/05839 ,  H01L2224/05844 ,  H01L2224/05847 ,  H01L2224/05855 ,  H01L2224/0603 ,  H01L2224/06102 ,  H01L2224/10145 ,  H01L2224/11001 ,  H01L2224/11005 ,  H01L2224/11009 ,  H01L2224/111 ,  H01L2224/11318 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/11848 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/11901 ,  H01L2224/1191 ,  H01L2224/13005 ,  H01L2224/13017 ,  H01L2224/13018 ,  H01L2224/13021 ,  H01L2224/13022 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13116 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13169 ,  H01L2224/1319 ,  H01L2224/13294 ,  H01L2224/133 ,  H01L2224/13339 ,  H01L2224/13344 ,  H01L2224/13347 ,  H01L2224/13355 ,  H01L2224/13561 ,  H01L2224/13562 ,  H01L2224/13565 ,  H01L2224/136 ,  H01L2224/13609 ,  H01L2224/13611 ,  H01L2224/1403 ,  H01L2224/16058 ,  H01L2224/16059 ,  H01L2224/16145 ,  H01L2224/16147 ,  H01L2224/16148 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/1701 ,  H01L2224/1703 ,  H01L2224/17181 ,  H01L2224/17505 ,  H01L2224/2101 ,  H01L2224/211 ,  H01L2224/2401 ,  H01L2224/2402 ,  H01L2224/24137 ,  H01L2224/24146 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/73267 ,  H01L2224/75253 ,  H01L2224/81 ,  H01L2224/81138 ,  H01L2224/81141 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/8121 ,  H01L2224/8122 ,  H01L2224/81224 ,  H01L2224/81815 ,  H01L2224/82005 ,  H01L2224/82101 ,  H01L2224/82102 ,  H01L2224/82105 ,  H01L2224/83 ,  H01L2224/8385 ,  H01L2224/9211 ,  H01L2225/06513 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/07025 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/15321 ,  H01L2924/3512 ,  H01L2924/381 ,  H01L2924/3841

摘要： A solder connection may be surrounded by a solder locking layer (1210, 2210) and may be recessed in a hole (1230) in that layer. The recess may be obtained by evaporating a vaporizable portion (1250) of the solder connection. Other features are also provided.

公开(公告)号：US20170278813A1

公开(公告)日：2017-09-28

申请号：US15466282

申请日：2017-03-22

申请人： EBARA CORPORATION

发明人： Yohei WAKUDA ,  Yasuyuki MASUDA ,  Masashi SHIMOYAMA

IPC分类号： H01L23/00 ,  C25D21/10 ,  C25D5/54 ,  C25D7/12 ,  C25D3/38 ,  C25D5/02

CPC分类号： H01L24/11 ,  C25D3/38 ,  C25D5/02 ,  C25D5/54 ,  C25D7/12 ,  C25D21/10 ,  H01L24/13 ,  H01L24/94 ,  H01L2224/11462 ,  H01L2224/119 ,  H01L2224/13147 ,  H01L2924/00012 ,  H01L2924/00014

摘要： A plating method which can achieve a desired dome height is disclosed. The method includes: preparing correlation data showing a relationship between proportion of dome height to bump height and concentration of chloride ions; producing a plating solution containing chloride ions at a concentration which has been selected based on a desired proportion of dome height to bump height and on the correlation data, the selected concentration being in a range of 100 mg/dm3 to 300 mg/dm3; immersing a substrate in the plating solution; and passing an electric current between an anode and the substrate, both immersed in the plating solution, thereby plating the substrate to form bumps.

公开(公告)号：US09728518B2

公开(公告)日：2017-08-08

申请号：US14231997

申请日：2014-04-01

申请人： Roden R. Topacio

发明人： Roden R. Topacio

IPC分类号： H01L23/00 ,  H01L21/78 ,  H01L21/311

CPC分类号： H01L24/11 ,  H01L21/31144 ,  H01L21/78 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/0345 ,  H01L2224/0346 ,  H01L2224/05155 ,  H01L2224/05572 ,  H01L2224/05583 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/11 ,  H01L2224/1146 ,  H01L2224/119 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/94 ,  H01L2924/12042 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/01023 ,  H01L2924/014

摘要： Various semiconductor workpiece polymer layers and methods of fabricating the same are disclosed. In one aspect, a method of manufacturing is provided that includes applying a polymer layer to a passivation structure of a semiconductor workpiece where the semiconductor workpiece has first and second semiconductor chips separated by a dicing street. A first opening is patterned in the polymer layer with opposing edges pulled back from the dicing street. A mask is applied over the first opening. A first portion of the passivation structure is etched while using the polymer layer as an etch mask.