Abstract:
Flux formulations and solder attachment during the fabrication of electronic device assemblies are described. One flux formation includes a flux component and a metal particle component, the metal particle component being present in an amount of from 5 to 35 volume percent of the flux formulation. In one feature of certain embodiments, the metal particle component includes solder particles. Other embodiments are described and claimed.
Abstract:
A packaged power device involves no soft solder and no wire bonds. The direct-bonded metal layers of two direct metal bonded ceramic substrate assemblies, such as Direct Bonded Aluminum (DBA) substrates, are provided with sintered silver pads. Silver nanoparticle paste is applied to pads on the frontside of a die and the paste is sintered to form silver pads. Silver formed by an evaporative process covers the backside of the die. The die is pressed between the two DBAs such that direct silver-to-silver bonds are formed between sintered silver pads on the frontside of the die and corresponding sintered silver pads of one of the DBAs, and such that a direct silver-to-silver bond is formed between the backside silver of the die and a sintered silver pad of the other DBA. After leadforming, leadtrimming and encapsulation, the finished device has exposed ceramic of both DBAs on outside package surfaces.
Abstract:
A solder connection may be surrounded by a solder locking layer (1210, 2210) and may be recessed in a hole (1230) in that layer. The recess may be obtained by evaporating a vaporizable portion (1250) of the solder connection. Other features are also provided.
Abstract:
According to various embodiments, a method for processing a semiconductor substrate may include: covering a plurality of die regions of the semiconductor substrate with a metal; forming a plurality of dies from the semiconductor substrate, wherein each die of the plurality of dies is covered with the metal; and, subsequently, annealing the metal covering at least one die of the plurality of dies.
Abstract:
An electronic device includes a semiconductor die having a lower surface, a sintered metallic layer underlying the lower surface of the semiconductor die, a thermally conductive flow layer underlying the sintered metallic layer, and a thermally conductive substrate underlying the thermally conductive flow layer.
Abstract:
A flexible substrate may be provided having a first side and a second side. A device may be electrically coupled to the first side of the flexible substrate through one or more electrical connections. A warpage control device may be attached to the second side flexible substrate. The warpage control device may include an adhesive layer and a rigid layer. The warpage control device may be formed in an area of the second side of the flexible substrate that may be opposite the one or more electrical connections on the first side of the flexible substrate.
Abstract:
The invention generally relates to a packaging method of an ultra-thin chip, more specifically, the invention relates to a method for packaging the ultra-thin chip with solder ball thermo-compression in wafer level packaging process. The method starts with disposing solder balls on metal pads arranged on the front surface of semiconductor chips that are formed at the front surface of a semiconductor wafer. The solder balls are soften by heating the wafer, a compression plate is applied with a pressure on the top ends of the solder balls thus forming a co-planar top surface at the top ends of the solder balls. A molding compound is deposited on the front surface of the wafer with the top ends of the solder balls exposed. The wafer is then ground from its back surface to reduce its thickness to achieve ultra-thin chip.
Abstract:
An electronic element including an electronic element base and electrodes each of which has a first electrode having a surface composed of at least Al or an Al alloy and a second electrode composed of a metal nanoparticle sintered body and bonded to the first electrode. A bonding interface between the first electrode and the second electrode has a multilayer structure including, from the side of the first electrode to the side of the second electrode, (a) a first layer primarily composed of Al, (b) a second layer primarily composed of an Al oxide, (c) a third layer primarily composed of an alloy of Al and a constituent element of metal nanoparticles, and (d) a fourth layer primarily composed of the constituent element of the metal nanoparticles.
Abstract:
A semiconductor chip packaging on a flexible substrate is disclosed. The chip and the flexible substrate are provided with corresponding raised and indented micron-scale contact pads with the indented contact pads partially filled with a liquid amalgam. After low temperature amalgam curing, the chip and the substrate form a flexible substrate IC packaging with high conductivity, controllable interface layer thickness, micron-scale contact density and low process temperature. Adhesion between the chip and the substrate can be further enhanced by coating other areas with non-conducting adhesive.
Abstract:
An electronic element including an electronic element base and electrodes each of which has a first electrode having a surface composed of at least Al or an Al alloy and a second electrode composed of a metal nanoparticle sintered body and bonded to the first electrode. A bonding interface between the first electrode and the second electrode has a multilayer structure including, from the side of the first electrode to the side of the second electrode, (a) a first layer primarily composed of Al, (b) a second layer primarily composed of an Al oxide, (c) a third layer primarily composed of an alloy of Al and a constituent element of metal nanoparticles, and (d) a fourth layer primarily composed of the constituent element of the metal nanoparticles.