公开(公告)号：US12113039B2

公开(公告)日：2024-10-08

申请号：US17245397

申请日：2021-04-30

申请人： ALPHA ASSEMBLY SOLUTIONS INC.

发明人： Shamik Ghoshal ,  Nirmalya Kumar Chaki ,  Poulami Sengupta Roy ,  Siuli Sarkar ,  Anubhav Rustogi

IPC分类号： H01L23/00 ,  B22F1/052 ,  B22F1/102 ,  B22F1/107 ,  B22F1/17 ,  B22F7/04 ,  B23K1/00 ,  B23K35/02 ,  B23K35/30 ,  B23K35/36 ,  B23K35/365 ,  B23K101/40 ,  B23K103/00 ,  H01B1/22 ,  H01L25/00 ,  H05K3/32 ,  H10K50/842

CPC分类号： H01L24/29 ,  B22F1/052 ,  B22F1/102 ,  B22F1/107 ,  B22F1/17 ,  B22F7/04 ,  B23K1/0016 ,  B23K35/025 ,  B23K35/3006 ,  B23K35/3601 ,  B23K35/3613 ,  B23K35/3618 ,  B23K35/365 ,  H01B1/22 ,  H01L24/11 ,  H01L24/13 ,  H01L24/27 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  B22F2007/047 ,  B22F2301/255 ,  B22F2302/45 ,  B23K2101/40 ,  B23K2103/56 ,  H01L24/16 ,  H01L24/48 ,  H01L24/73 ,  H01L24/92 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05155 ,  H01L2224/05644 ,  H01L2224/11003 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/131 ,  H01L2224/13339 ,  H01L2224/13347 ,  H01L2224/13355 ,  H01L2224/13387 ,  H01L2224/1339 ,  H01L2224/13439 ,  H01L2224/1349 ,  H01L2224/13499 ,  H01L2224/16227 ,  H01L2224/27003 ,  H01L2224/271 ,  H01L2224/27332 ,  H01L2224/27436 ,  H01L2224/27505 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/29387 ,  H01L2224/2939 ,  H01L2224/29439 ,  H01L2224/2949 ,  H01L2224/29499 ,  H01L2224/32145 ,  H01L2224/32146 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/81075 ,  H01L2224/81192 ,  H01L2224/81203 ,  H01L2224/8121 ,  H01L2224/8184 ,  H01L2224/81948 ,  H01L2224/83075 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83203 ,  H01L2224/8321 ,  H01L2224/83439 ,  H01L2224/83447 ,  H01L2224/8384 ,  H01L2224/83948 ,  H01L2224/92247 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/0665 ,  H01L2924/12041 ,  H01L2924/12044 ,  H01L2924/1461 ,  H01L2924/20102 ,  H01L2924/20103 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/206 ,  H01L2924/2064 ,  H05K3/321 ,  H10K50/8426 ,  H01L2224/83203 ,  H01L2924/00012 ,  H01L2224/94 ,  H01L2224/83 ,  H01L2224/29339 ,  H01L2924/0105 ,  H01L2224/29339 ,  H01L2924/01046 ,  H01L2224/29339 ,  H01L2924/01047 ,  H01L2224/29339 ,  H01L2924/01029 ,  H01L2224/29339 ,  H01L2924/01028 ,  H01L2224/29439 ,  H01L2924/00014 ,  H01L2224/29355 ,  H01L2924/00014 ,  H01L2224/29347 ,  H01L2924/01028 ,  H01L2224/29347 ,  H01L2924/01028 ,  H01L2924/0103 ,  H01L2224/29387 ,  H01L2924/0493 ,  H01L2924/01004 ,  H01L2224/2949 ,  H01L2924/00012 ,  H01L2224/2939 ,  H01L2924/0665 ,  H01L2224/271 ,  H01L2924/00014 ,  H01L2224/27436 ,  H01L2924/00014 ,  H01L2224/94 ,  H01L2224/27 ,  H01L2224/05155 ,  H01L2924/00014 ,  H01L2224/05644 ,  H01L2924/00014 ,  H01L2224/83439 ,  H01L2924/00014 ,  H01L2224/83447 ,  H01L2924/01074 ,  H01L2224/8321 ,  H01L2924/00014 ,  H01L2224/81203 ,  H01L2924/00012 ,  H01L2224/94 ,  H01L2224/81 ,  H01L2224/13339 ,  H01L2924/0105 ,  H01L2224/13339 ,  H01L2924/01046 ,  H01L2224/13339 ,  H01L2924/01047 ,  H01L2224/13339 ,  H01L2924/01029 ,  H01L2224/13339 ,  H01L2924/01028 ,  H01L2224/13439 ,  H01L2924/00014 ,  H01L2224/13355 ,  H01L2924/00014 ,  H01L2224/13347 ,  H01L2924/01028 ,  H01L2224/13347 ,  H01L2924/01028 ,  H01L2924/0103 ,  H01L2224/13387 ,  H01L2924/0493 ,  H01L2924/01004 ,  H01L2224/1349 ,  H01L2924/00012 ,  H01L2224/1339 ,  H01L2924/0665 ,  H01L2224/131 ,  H01L2924/00014 ,  H01L2224/11436 ,  H01L2924/00014 ,  H01L2224/94 ,  H01L2224/11 ,  H01L2224/8121 ,  H01L2924/00014 ,  H01L2924/00014 ,  H01L2224/45099 ,  H01L2224/1132 ,  H01L2924/00014 ,  H01L2224/73265 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2924/00012 ,  H01L2224/73265 ,  H01L2224/32245 ,  H01L2224/48247 ,  H01L2924/00012 ,  H01L2224/73265 ,  H01L2224/32145 ,  H01L2224/48247 ,  H01L2924/00 ,  H01L2224/73265 ,  H01L2224/32145 ,  H01L2224/48227 ,  H01L2924/00 ,  H01L2224/92247 ,  H01L2224/73265 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2924/00 ,  H01L2224/92247 ,  H01L2224/73265 ,  H01L2224/32245 ,  H01L2224/48247 ,  H01L2924/00

摘要： A sintering powder comprising:



a first type of metal particles having a mean longest dimension of from 100 nm to 50 μm.

公开(公告)号：US11955346B2

公开(公告)日：2024-04-09

申请号：US17227525

申请日：2021-04-12

申请人： Micron Technology, Inc.

发明人： Shijian Luo ,  Jonathan S. Hacker

IPC分类号： H01L21/56 ,  H01L23/00 ,  H01L23/31

CPC分类号： H01L21/563 ,  H01L23/3157 ,  H01L24/16 ,  H01L24/29 ,  H01L24/73 ,  H01L24/81 ,  H01L24/91 ,  H01L24/83 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/16227 ,  H01L2224/26145 ,  H01L2224/29023 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2224/83007 ,  H01L2224/83191 ,  H01L2224/83193 ,  H01L2224/9211 ,  H01L2224/94 ,  H01L2924/18161 ,  H01L2224/94 ,  H01L2224/11 ,  H01L2224/94 ,  H01L2224/27 ,  H01L2224/131 ,  H01L2924/013 ,  H01L2924/00014

摘要： A semiconductor device includes a substrate including traces, wherein the traces protrude above a top surface of the substrate; a prefill material over the substrate and between the traces; a die attached over the substrate; and a wafer-level underfill between the prefill material and the die.

公开(公告)号：US11855014B2

公开(公告)日：2023-12-26

申请号：US17120825

申请日：2020-12-14

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chen-Hua Yu ,  Ming-Che Ho ,  Hung-Jui Kuo ,  Yi-Wen Wu ,  Tzung-Hui Lee

IPC分类号： H01L23/498 ,  H01L23/00 ,  H01L21/66 ,  H01L23/538

CPC分类号： H01L24/02 ,  H01L22/14 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/27 ,  H01L24/73 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/5389 ,  H01L24/03 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L2224/0215 ,  H01L2224/02125 ,  H01L2224/02185 ,  H01L2224/02315 ,  H01L2224/02375 ,  H01L2224/02379 ,  H01L2224/0345 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05024 ,  H01L2224/05558 ,  H01L2224/05569 ,  H01L2224/10125 ,  H01L2224/11009 ,  H01L2224/1147 ,  H01L2224/11462 ,  H01L2224/13018 ,  H01L2224/13026 ,  H01L2224/13147 ,  H01L2224/16227 ,  H01L2224/26125 ,  H01L2224/27009 ,  H01L2224/2747 ,  H01L2224/27462 ,  H01L2224/29018 ,  H01L2224/29036 ,  H01L2224/29147 ,  H01L2224/32227 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73203 ,  H01L2224/94 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2224/73203 ,  H01L2924/00012 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2224/1147 ,  H01L2924/00014 ,  H01L2224/0215 ,  H01L2924/06 ,  H01L2224/0345 ,  H01L2924/00014 ,  H01L2224/94 ,  H01L2224/11 ,  H01L2224/94 ,  H01L2224/03 ,  H01L2224/94 ,  H01L2224/27

摘要： A semiconductor device and method of manufacturing is provided, whereby a support structure is utilized to provide additional support for a conductive element in order to eliminate or reduce the formation of a defective surface such that the conductive element may be formed to have a thinner structure without suffering deleterious structures.

公开(公告)号：US20190198376A1

公开(公告)日：2019-06-27

申请号：US16293201

申请日：2019-03-05

申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

发明人： Darrell D. TRUHITTE ,  James P. LETTERMAN, JR.

IPC分类号： H01L21/683 ,  H01L23/00 ,  H01L23/31 ,  H01L21/48 ,  H01L21/56

CPC分类号： H01L21/6835 ,  H01L21/4832 ,  H01L21/561 ,  H01L21/568 ,  H01L21/6836 ,  H01L21/78 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/36 ,  H01L23/49537 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/48 ,  H01L24/49 ,  H01L24/75 ,  H01L24/81 ,  H01L24/83 ,  H01L24/85 ,  H01L24/92 ,  H01L24/94 ,  H01L24/95 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/105 ,  H01L2221/68304 ,  H01L2221/68327 ,  H01L2221/68377 ,  H01L2221/68381 ,  H01L2224/04105 ,  H01L2224/11 ,  H01L2224/11003 ,  H01L2224/11312 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/11418 ,  H01L2224/1146 ,  H01L2224/11462 ,  H01L2224/116 ,  H01L2224/119 ,  H01L2224/1308 ,  H01L2224/131 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13166 ,  H01L2224/1319 ,  H01L2224/16245 ,  H01L2224/16258 ,  H01L2224/27003 ,  H01L2224/27312 ,  H01L2224/2732 ,  H01L2224/27334 ,  H01L2224/27418 ,  H01L2224/2746 ,  H01L2224/27462 ,  H01L2224/276 ,  H01L2224/279 ,  H01L2224/2908 ,  H01L2224/291 ,  H01L2224/29124 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/29164 ,  H01L2224/29166 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/32258 ,  H01L2224/33181 ,  H01L2224/45015 ,  H01L2224/48091 ,  H01L2224/4811 ,  H01L2224/48111 ,  H01L2224/48145 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/49109 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/75251 ,  H01L2224/75252 ,  H01L2224/753 ,  H01L2224/75755 ,  H01L2224/75756 ,  H01L2224/81192 ,  H01L2224/8121 ,  H01L2224/81805 ,  H01L2224/81815 ,  H01L2224/81856 ,  H01L2224/83 ,  H01L2224/83005 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/8321 ,  H01L2224/83805 ,  H01L2224/83815 ,  H01L2224/83856 ,  H01L2224/85005 ,  H01L2224/92 ,  H01L2224/92125 ,  H01L2224/92147 ,  H01L2224/92227 ,  H01L2224/94 ,  H01L2224/95 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2924/0665 ,  H01L2924/014 ,  H01L2224/81 ,  H01L2224/27 ,  H01L2224/85 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2924/207

摘要： Methods of manufacturing semiconductor packages. Implementations may include: providing a substrate with a first side, a second side, and a thickness; forming a plurality of pads on the first side of the substrate; and applying die attach material to the plurality of pads. The method may include bonding a wafer including a plurality of semiconductor die to the substrate at one or more die pads included in each die. The method may also include singulating the plurality of semiconductor die, overmolding the plurality of semiconductor die and the first side of the substrate with an overmold material, and removing the substrate to expose the plurality of pads and to form a plurality of semiconductor packages coupled together through the overmold material. The method also may include singulating the plurality of semiconductor packages to separate them.

公开(公告)号：US20190123025A1

公开(公告)日：2019-04-25

申请号：US16220268

申请日：2018-12-14

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Hsien-Wei Chen

IPC分类号： H01L25/065 ,  H01L23/00 ,  H01L25/10

CPC分类号： H01L25/0657 ,  H01L24/11 ,  H01L24/16 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/81 ,  H01L25/105 ,  H01L2224/16225 ,  H01L2224/27 ,  H01L2224/2929 ,  H01L2224/29299 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48227 ,  H01L2224/48464 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/81801 ,  H01L2224/83191 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2225/1094 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/15321 ,  H01L2924/181 ,  H01L2224/45015 ,  H01L2924/207

摘要： An integrated circuit package assembly includes a first integrated circuit package and a second integrated circuit package. The first integrated circuit package includes a first integrated circuit die mounted on a first substrate. The second integrated circuit package includes a second integrated circuit die mounted on a second substrate. The second integrated circuit package is disposed under the first integrated circuit package. Solder bumps are disposed between the first integrated circuit package and the second integrated circuit package and provide electrical signal connections between the first integrated circuit die and the second integrated circuit die. A buffer layer is disposed between the first substrate and the second integrated circuit die to facilitate thermal conduction between the first integrated circuit package and the second integrated circuit package.

公开(公告)号：US20190047081A1

公开(公告)日：2019-02-14

申请号：US16075260

申请日：2016-12-13

申请人： NITTO DENKO CORPORATION

发明人： Nao Kamakura ,  Yuki Sugo ,  Satoshi Honda

IPC分类号： B23K20/16 ,  B22F7/08

CPC分类号： B23K20/16 ,  B22F3/14 ,  B22F7/08 ,  B22F2201/01 ,  B22F2201/02 ,  B22F2201/20 ,  B22F2999/00 ,  B23K20/026 ,  B23K35/0222 ,  B23K35/0238 ,  B23K35/0244 ,  B23K35/36 ,  B23K35/3612 ,  B23K35/3613 ,  B23K35/3618 ,  B23K35/38 ,  B23K2101/36 ,  B23K2101/40 ,  B23K2103/56 ,  B32B5/16 ,  B32B15/00 ,  B32B37/04 ,  B32B37/06 ,  B32B37/1009 ,  B32B37/24 ,  B32B2305/342 ,  B32B2305/80 ,  B32B2309/022 ,  B32B2309/125 ,  B32B2309/68 ,  B32B2311/04 ,  B32B2311/08 ,  B32B2311/12 ,  B32B2311/22 ,  H01L24/27 ,  H01L24/29 ,  H01L24/83 ,  H01L2224/27436 ,  H01L2224/29294 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/32225 ,  H01L2224/32227 ,  H01L2224/83065 ,  H01L2224/83075 ,  H01L2224/8309 ,  H01L2224/83191 ,  H01L2224/83204 ,  H01L2224/8384 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2224/83 ,  H01L2224/27

摘要： Provided is a joint manufacturing method including: a step A of preparing a laminate in which two objects to be joined are temporarily adhered with a heat-joining sheet including a pre-sintering layer interposed between the two objects to be joined; a step B of increasing a temperature of the laminate from a temperature equal to or lower than a first temperature defined below to a second temperature; and a step C of holding the temperature of the laminate in a predetermined range after the step B, in which the laminate is pressurized during at least a part of the step B and at least a part of the step C. The first temperature is a temperature at which an organic component contained in the pre-sintering layer is decreased by 10% by weight when the pre-sintering layer is subjected to thermogravimetric measurement.

公开(公告)号：US20180331055A1

公开(公告)日：2018-11-15

申请号：US16042162

申请日：2018-07-23

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Hui-Min Huang ,  Chih-Wei Lin ,  Tsai-Tsung Tsai ,  Ming-Da Cheng ,  Chung-Shi Liu ,  Chen-Hua Yu

IPC分类号： H01L23/00 ,  H01L21/48 ,  H01L21/56 ,  H01L23/31 ,  H01L23/48 ,  H01L23/498 ,  H01L23/538

CPC分类号： H01L24/05 ,  H01L21/481 ,  H01L21/486 ,  H01L21/56 ,  H01L21/561 ,  H01L21/568 ,  H01L23/3114 ,  H01L23/3135 ,  H01L23/481 ,  H01L23/49811 ,  H01L23/49827 ,  H01L23/49833 ,  H01L23/49838 ,  H01L23/49861 ,  H01L23/49866 ,  H01L23/5389 ,  H01L24/13 ,  H01L24/19 ,  H01L24/96 ,  H01L24/97 ,  H01L2224/02372 ,  H01L2224/0239 ,  H01L2224/0401 ,  H01L2224/05083 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05184 ,  H01L2224/12105 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29386 ,  H01L2224/83191 ,  H01L2224/94 ,  H01L2924/01029 ,  H01L2924/18162 ,  H01L2224/03 ,  H01L2224/27

摘要： A first protective layer is formed on a first die and a second die, and openings are formed within the first protective layer. The first die and the second die are encapsulated such that the encapsulant is thicker than the first die and the second die, and vias are formed within the openings. A redistribution layer can also be formed to extend over the encapsulant, and the first die may be separated from the second die.

公开(公告)号：US20180323097A1

公开(公告)日：2018-11-08

申请号：US15983158

申请日：2018-05-18

申请人： HITACHI CHEMICAL COMPANY, LTD.

发明人： Yukihiro IWANAGA ,  Kouji SUZUMURA ,  Tatsuya SAKUTA

IPC分类号： H01L21/683 ,  H01L21/68 ,  H01L23/00 ,  H01L21/78

CPC分类号： H01L21/6836 ,  H01L21/68 ,  H01L21/78 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2221/68377 ,  H01L2221/68381 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48225 ,  H01L2224/48245 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/83862 ,  H01L2224/94 ,  H01L2924/181 ,  H01L2224/27 ,  H01L2924/00014 ,  H01L2924/0665 ,  H01L2924/00012

摘要： An embodiment of the present invention relates to an expansion method comprising: a step (I) of preparing a laminate having a semiconductor wafer in which modified sections have been formed along intended cutting lines, a die bonding film and a dicing tape, a step (IIA) of expanding the dicing tape with the laminate in a cooled state, a step (IIB) of loosening the expanded dicing tape, and a step (IIC) of expanding the dicing tape with the laminate in a cooled state, dividing the semiconductor wafer and the die bonding film into chips along the intended cutting lines, and widening the spaces between the chips.

公开(公告)号：US10062625B2

公开(公告)日：2018-08-28

申请号：US15486663

申请日：2017-04-13

申请人： DEXERIALS CORPORATION

发明人： Hironobu Moriyama

IPC分类号： H01L21/00 ,  H01L23/29 ,  H01L23/00 ,  H01L21/56

CPC分类号： H01L23/293 ,  C08G59/18 ,  C08G59/24 ,  C08G59/4207 ,  C08G59/686 ,  C08K5/14 ,  C08L33/10 ,  C08L63/00 ,  H01L21/563 ,  H01L21/6836 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/75 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68377 ,  H01L2224/13023 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/27003 ,  H01L2224/271 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29387 ,  H01L2224/2939 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/75301 ,  H01L2224/75702 ,  H01L2224/81011 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/81204 ,  H01L2224/81815 ,  H01L2224/81907 ,  H01L2224/83191 ,  H01L2224/83204 ,  H01L2224/83862 ,  H01L2224/83907 ,  H01L2224/92 ,  H01L2224/9205 ,  H01L2224/921 ,  H01L2224/9211 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/06 ,  H01L2924/0635 ,  H01L2924/0665 ,  H01L2924/186 ,  H01L2924/20102 ,  H01L2924/20103 ,  H01L2924/20104 ,  H01L2924/00014 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/01051 ,  H01L2924/05442 ,  H01L2924/0549 ,  H01L2924/0532 ,  H01L2924/01012 ,  H01L2924/05341 ,  H01L2924/0102 ,  H01L2924/0544 ,  H01L2924/01006 ,  H01L2224/27 ,  H01L2924/00012 ,  H01L2224/81 ,  H01L2224/83 ,  H01L21/78 ,  H01L2924/00

摘要： An underfill material enabling voidless packaging and excellent solder bonding properties, and a method for manufacturing a semiconductor device using the same are provided. An underfill material is used which contains an epoxy resin and a curing agent, and a time for a reaction rate to reach 20% at 240° C. calculated by Ozawa method using a differential scanning calorimeter is 2.0 sec or less and a time for the reaction rate to reach 60% is 3.0 sec or more. This enables voidless packaging and excellent solder connection properties.

公开(公告)号：US20180105627A1

公开(公告)日：2018-04-19

申请号：US15843021

申请日：2017-12-15

申请人： Henkel AG & Co. KGAA

发明人： Rainer Schoenfeld ,  Holger Frey ,  Daniel Leibig

IPC分类号： C08F212/08 ,  C09J125/06 ,  C09D125/08 ,  H01L23/00

CPC分类号： C08F212/08 ,  C08F12/32 ,  C08F2810/40 ,  C09D125/08 ,  C09D125/16 ,  C09J125/06 ,  C09J125/16 ,  H01L21/02118 ,  H01L21/02282 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L24/94 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/2741 ,  H01L2224/27848 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83193 ,  H01L2224/83203 ,  H01L2224/83862 ,  H01L2224/94 ,  H01L2924/10253 ,  H01L2924/20106 ,  C08F212/32 ,  H01L2224/27 ,  H01L2924/00012 ,  H01L2924/00014

摘要： The present application is directed to a crosslinkable copolymer comprising styrene and 4-vinyl benzocyclobutene monomers and at least one alkoxysilane group, a method for generating an ultrathin copolymer film, which contains at least one crosslinked copolymer as defined herein, on a silicon-containing substrate, a composition or film comprising at least one copolymer as defined herein, as well as the use of this copolymer or composition containing it for electrical insulation and/or bonding of silicon-containing substrates.