公开(公告)号：US12131900B2

公开(公告)日：2024-10-29

申请号：US17873793

申请日：2022-07-26

申请人： Applied Materials, Inc.

发明人： Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Lakmal C. Kalutarage ,  Thomas Joseph Knisley

IPC分类号： C23C16/00 ,  C23C16/02 ,  C23C16/30 ,  C23C16/455 ,  H01L21/02 ,  H01L21/311

CPC分类号： H01L21/0217 ,  C23C16/0245 ,  C23C16/308 ,  C23C16/45525 ,  H01L21/02118 ,  H01L21/02211 ,  H01L21/0228 ,  H01L21/02315 ,  H01L21/31138

摘要： Methods of enhancing selective deposition are described. In some embodiments, a blocking layer is deposited on a metal surface before deposition of a dielectric. In some embodiments, a metal surface is functionalized to enhance or decrease its reactivity.

公开(公告)号：US20240355874A1

公开(公告)日：2024-10-24

申请号：US18685521

申请日：2021-10-14

申请人： Mitsubishi Electric Corporation

发明人： Atsufumi INOUE ,  Tetsu NEGISHI ,  Tsuyoshi KAWAKAMI ,  Tomohiro TAMAKI

IPC分类号： H01L29/06 ,  H01L21/02 ,  H01L21/285 ,  H01L21/3205 ,  H01L23/36 ,  H01L29/16 ,  H01L29/20 ,  H01L29/24 ,  H01L29/739 ,  H01L29/78

CPC分类号： H01L29/0653 ,  H01L21/02118 ,  H01L21/02345 ,  H01L21/32051 ,  H01L23/36 ,  H01L21/28506 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/24 ,  H01L29/7395 ,  H01L29/7827

摘要： A semiconductor apparatus includes: a semiconductor substrate; a first surface electrode on the substrate and a second surface electrode formed separately and insulated from the first surface electrode; an electroconductive layer formed between the electrodes with a space from the electrodes; an insulating layer formed to cover the electroconductive layer, a surface between the electrodes, and an end portion of each electrode on a side close to the electroconductive layer; a short-circuit prevention layer having an insulating property formed to cover the insulating layer between the electrodes and the electroconductive layer, the short-circuit prevention layer having a thickness equal to or larger than a height of the electroconductive layer and being made of a material different from that of the insulating layer; a metal plating layer formed on the electrodes; and a reverse-surface electrode on the opposite surface of the substrate, thereby being capable of preventing the electrodes from short-circuiting.

公开(公告)号：US12119218B2

公开(公告)日：2024-10-15

申请号：US17310303

申请日：2020-01-28

申请人： Lam Research Corporation

发明人： Stephen M. Sirard ,  Ratchana Limary ,  Yang Pan ,  Diane Hymes

IPC分类号： H01L21/02 ,  H01L21/306 ,  H01L21/67

CPC分类号： H01L21/02118 ,  H01L21/02282 ,  H01L21/02307 ,  H01L21/02348 ,  H01L21/30625 ,  H01L21/6715

摘要： A method for protecting a surface of a substrate during processing includes a) providing a solution forming a co-polymer having a ceiling temperature; b) dispensing the solution onto a surface of the substrate to form a sacrificial protective layer, wherein the co-polymer is kinetically trapped to allow storage at a temperature above the ceiling temperature; c) exposing the substrate to ambient conditions for a predetermined period; and d) de-polymerizing the sacrificial protective layer by using stimuli selected from a group consisting of ultraviolet (UV) light and heat.

公开(公告)号：US20240339361A1

公开(公告)日：2024-10-10

申请号：US18620327

申请日：2024-03-28

申请人： Infineon Technologies AG

发明人： Franz-Josef Pichler ,  Benjamin Bernard ,  Mario Stefenelli

IPC分类号： H01L21/82 ,  H01L21/02 ,  H01L21/268 ,  H01L21/304 ,  H01L21/324 ,  H01L21/683 ,  H01L29/16

CPC分类号： H01L21/8213 ,  H01L21/02118 ,  H01L21/268 ,  H01L21/304 ,  H01L21/324 ,  H01L21/6836 ,  H01L29/1608 ,  H01L2221/68309 ,  H01L2221/68327 ,  H01L2221/68381

摘要： A method for separating dies from a semiconductor substrate having dies adjoining a first surface of the substrate includes: attaching the substrate to a carrier via the first surface; generating first modifications by introducing laser irradiation into an interior of the substrate via a second surface of the substrate, the first modifications extending between the first surface and a vertical level in the interior that is being spaced from the second surface, the first modifications laterally surrounding the dies; generating second modifications by introducing laser irradiation into the interior via the second surface, the second modifications sub-dividing the substrate into a first part between the first surface and the second modifications, and a second part between the second surface and the second modifications; separating the parts along a first separation area defined by the second modifications; and separating the dies along a second separation area defined by the first modifications.

公开(公告)号：US12094766B2

公开(公告)日：2024-09-17

申请号：US17971212

申请日：2022-10-21

申请人： Applied Materials, Inc.

发明人： Michael L. McSwiney ,  Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Drew Phillips ,  Aaron Dangerfield ,  David Thompson ,  Kevin Kashefi ,  Xiangjin Xie

IPC分类号： H01L21/768 ,  B05D1/00 ,  H01L21/02

CPC分类号： H01L21/76829 ,  B05D1/60 ,  H01L21/02118 ,  H01L21/02205 ,  H01L21/76846 ,  H01L21/76877

摘要： Methods for selectively depositing on metallic surfaces are disclosed. Some embodiments of the disclosure utilize a hydrocarbon having at least two functional groups selected from alkene, alkyne, ketone, hydroxyl, aldehyde, or combinations thereof to form a self-assembled monolayer (SAM) on metallic surfaces.

公开(公告)号：US12068154B2

公开(公告)日：2024-08-20

申请号：US17225386

申请日：2021-04-08

申请人： ASM IP Holding B.V.

发明人： Hirotsugu Sugiura ,  Yoshiyuki Kikuchi

IPC分类号： C23C16/34 ,  C23C16/455 ,  C23C16/50 ,  H01J37/32 ,  H01L21/02

CPC分类号： H01L21/02118 ,  C23C16/347 ,  C23C16/45553 ,  C23C16/50 ,  H01J37/3244 ,  H01L21/02205 ,  H01L21/02274 ,  H01L21/0228 ,  H01J2237/332

摘要： Methods and systems for forming a forming a nitrogen-containing carbon film and structures formed using the methods or systems are disclosed. Exemplary methods include providing a precursor with carbon-terminated carbon-nitrogen bonds. The methods can further include providing a reactant to the reaction chamber.

公开(公告)号：US20240222135A1

公开(公告)日：2024-07-04

申请号：US18398598

申请日：2023-12-28

申请人： ASM IP Holding B.V.

发明人： Daniele Chiappe ,  Viraj Madhiwala ,  Eva E. Tois ,  Marko Tuominen ,  Charles Dezelah ,  Shaoren Deng ,  Vincent Vandalon ,  Anirudhan Chandrasekaran

IPC分类号： H01L21/3205 ,  H01L21/02 ,  H01L21/3213

CPC分类号： H01L21/32051 ,  H01L21/02068 ,  H01L21/02118 ,  H01L21/32135

摘要： Methods for forming selective passivation layers on a dielectric surface relative to a metallic surface employing a chalcogenide layer are disclosed. Methods for utilizing selective passivation layers for depositing target films as also disclosed. Exemplary structures that include selective passivation layers are further disclosed.

公开(公告)号：USRE50029E1

公开(公告)日：2024-07-02

申请号：US17230173

申请日：2021-04-14

申请人： Micron Technology, Inc.

发明人： Scott E. Sills ,  Gurtej S. Sandhu

IPC分类号： B81C1/00 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/02 ,  H01L21/033 ,  H01L21/311 ,  H01L29/02 ,  H01L29/06 ,  H01L29/66

CPC分类号： B81C1/00031 ,  B81C1/00206 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/02118 ,  H01L21/02227 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31138 ,  H01L29/02 ,  H01L29/0665 ,  H01L29/66007

摘要： A method of forming a nanostructure comprises forming a directed self-assembly of nucleic acid structures on a patterned substrate. The patterned substrate comprises multiple regions. Each of the regions on the patterned substrate is specifically tailored for adsorption of specific nucleic acid structure in the directed self-assembly.

公开(公告)号：US11978660B2

公开(公告)日：2024-05-07

申请号：US18331066

申请日：2023-06-07

申请人： Kioxia Corporation

发明人： Hirotaka Tsuda

IPC分类号： H01L21/768 ,  H01L21/02 ,  H01L21/027 ,  H01L21/311

CPC分类号： H01L21/76817 ,  H01L21/02118 ,  H01L21/0274 ,  H01L21/31144

摘要： According to one embodiment, an original plate for imprint lithography has a first surface side having a patterned portion thereon. The patterned portion includes a groove having a bottom surface recessed from a first surface to a first depth, and a columnar portion on the bottom surface and protruding from the bottom surface to extend beyond the first surface. The original plate may be used to form replica templates by imprint lithography processes. The replica templates can be used in semiconductor device manufacturing processes or the like.

公开(公告)号：US11965109B2

公开(公告)日：2024-04-23

申请号：US16929638

申请日：2020-07-15

申请人： MITSUI CHEMICALS, INC.

发明人： Yasuhisa Kayaba ,  Hirofumi Tanaka ,  Koji Inoue

IPC分类号： C09D177/06 ,  C08G69/42 ,  C08G73/02 ,  C08G73/10 ,  H01L21/02 ,  H01L21/3105 ,  H01L23/29 ,  C08K3/28 ,  C08K5/09 ,  C08K5/092

CPC分类号： C09D177/06 ,  C08G69/42 ,  C08G73/0293 ,  C08G73/1003 ,  H01L21/02118 ,  H01L21/02142 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/02318 ,  H01L21/02343 ,  H01L21/3105 ,  H01L23/296 ,  C08K3/28 ,  C08K5/09 ,  C08K5/092

摘要： Provided is a composition for forming a film for semiconductor devices, including: a compound (A) including a Si—O bond and a cationic functional group containing at least one of a primary nitrogen atom or a secondary nitrogen atom; a crosslinking agent (B) which includes three or more —C(═O)OX groups (X is a hydrogen atom or an alkyl group having from 1 to 6 carbon atoms) in the molecule, in which from one to six of three or more —C(═O)OX groups are —C(═O)OH groups, and which has a weight average molecular weight of from 200 to 600; and a polar solvent (D).