公开(公告)号：US20240363695A1

公开(公告)日：2024-10-31

申请号：US18771277

申请日：2024-07-12

申请人： Flosfia Inc.

发明人： Takashi SHINOHE ,  Mitsuru OKIGAWA ,  Koji AMAZUTSUMI ,  Yasushi HIGUCHI ,  Tokiyoshi MATSUDA

IPC分类号： H01L29/24 ,  H01L29/739 ,  H01L29/778 ,  H01L29/868 ,  H01L29/872

CPC分类号： H01L29/24 ,  H01L29/7395 ,  H01L29/7786 ,  H01L29/868 ,  H01L29/872

摘要： Provided is a semiconductor device including at least: an n type oxide semiconductor layer; a first p type oxide semiconductor layer that forms a main junction with the n type oxide semiconductor layer, and a hole supply layer, wherein the hole supply layer includes a second p type oxide semiconductor layer that is different from the first p type oxide semiconductor layer.

公开(公告)号：US20240356542A1

公开(公告)日：2024-10-24

申请号：US18213567

申请日：2023-06-23

申请人： WILL SEMICONDUCTOR (SHANGHAI) CO. LTD.

发明人： Tetsuya OKADA ,  Hiroki ARAI

IPC分类号： H03K17/16 ,  H01L29/10 ,  H01L29/40 ,  H01L29/417 ,  H01L29/739

CPC分类号： H03K17/168 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/41708 ,  H01L29/7397

摘要： [Problem to be solved] To reduce a loss according to an operating condition of high-frequency use or low-frequency use.
[Solution] A trench gate type IGBT includes: a gate trench 120G, which extends from the front surface toward the back surface side of a semiconductor substrate, and causes a current to flow through a channel region formed in the periphery by an applied voltage; a switch trench 120SW, which extends from the front surface toward the back surface side of the semiconductor substrate and has no channel region formed therearound; and a setting terminal for externally controlling the voltage of the switch trench 120SW. A switching between a first state, in which a voltage drop at on-time is relatively small and an energy loss at turn-off time is relatively large, and a second state, in which the voltage drop at on-time is relatively large and the energy loss at turn-off time is relatively small, can be performed, according to a voltage applied to the setting terminal.

公开(公告)号：US12119395B2

公开(公告)日：2024-10-15

申请号：US17762212

申请日：2020-08-26

申请人： SOUTHEAST UNIVERSITY ,  CSMC TECHNOLOGIES FAB2 CO., LTD.

发明人： Long Zhang ,  Jie Ma ,  Yan Gu ,  Sen Zhang ,  Jing Zhu ,  Jinli Gong ,  Weifeng Sun ,  Longxing Shi

IPC分类号： H01L29/739 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10

CPC分类号： H01L29/7394 ,  H01L29/0623 ,  H01L29/0834 ,  H01L29/1095

摘要： An insulated gate bipolar transistor, comprising an anode second conductivity-type region and an anode first conductivity-type region provided on a drift region; the anode first conductivity-type region comprises a first region and a second region, and the anode second conductivity-type region comprises a third region and a fourth region, the dopant concentration of the first region being less than that of the second region, the dopant concentration of the third region being less than that of the fourth region, the third region being provided between the fourth region and a body region, the first region being provided below the fourth region, and the second region being provided below the third region and located between the first region and the body region.

公开(公告)号：US20240339500A1

公开(公告)日：2024-10-10

申请号：US18487022

申请日：2023-10-13

申请人： Mitsubishi Electric Corporation

发明人： Katsumi NAKAMURA

IPC分类号： H01L29/08 ,  H01L21/265 ,  H01L29/66 ,  H01L29/739

CPC分类号： H01L29/0821 ,  H01L21/2652 ,  H01L29/083 ,  H01L29/6609 ,  H01L29/66348 ,  H01L29/7397 ,  H01L29/868

摘要： According to an aspect of the present disclosure, a semiconductor device includes a silicon substrate having a first surface and a second surface opposite the first surface and containing oxygen as impurity, a first electrode provided on the first surface and a second electrode provided on the second surface, wherein the silicon substrate includes an n type drift layer having impurity concentration that is higher on the second surface side, an n type first buffer layer provided on the second surface side of the drift layer and containing protons as impurity, and a second buffer layer provided on the second surface side of the first buffer layer.

公开(公告)号：US12113105B2

公开(公告)日：2024-10-08

申请号：US17720711

申请日：2022-04-14

申请人： RENESAS ELECTRONICS CORPORATION

发明人： Nao Nagata

IPC分类号： H01L29/08 ,  H01L29/06 ,  H01L29/10 ,  H01L29/739

CPC分类号： H01L29/083 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/7397

摘要： A semiconductor device includes first and second active cell regions and an inactive cell region between the first and second active cell regions, wherein each of the first and second active cell regions comprises: a trench gate; a first trench emitter; a first hole barrier layer of a first conductivity type formed between the trench gate and the first trench emitter; a base layer of a second conductivity type formed on upper portion of the first hole barrier layer; an emitter layer of the first conductivity type formed on upper portion of the base layer; a latch-up prevention layer of the second conductivity type formed on upper portion of the first hole barrier layer, wherein the inactive cell region comprises: a second trench emitter; a first floating layer of the second conductivity type formed between the trench gate of the first active cell region and the second trench emitter.

公开(公告)号：US20240332406A1

公开(公告)日：2024-10-03

申请号：US18610829

申请日：2024-03-20

申请人： STMicroelectronics International N.V.

发明人： Alexis GAUTHIER ,  Pascal CHEVALIER ,  Olivier WEBER ,  Franck ARNAUD

IPC分类号： H01L29/739 ,  H01L29/66

CPC分类号： H01L29/7394 ,  H01L29/66325

摘要： A bipolar transistor includes a first PN junction and a second PN junction. A first gate is located on the first PN junction. A second gate is located on the second PN junction.

公开(公告)号：US20240316674A1

公开(公告)日：2024-09-26

申请号：US18733522

申请日：2024-06-04

申请人： Illinois Tool Works Inc.

发明人： Andrew Joseph Henry

IPC分类号： B23K9/10 ,  H01F27/28 ,  H01L29/739 ,  H01L29/78

CPC分类号： B23K9/1043 ,  B23K9/1056 ,  H01F27/28 ,  H01L29/7393 ,  H01L29/783

摘要： An example welding-type power supply includes: a transformer having a primary winding and first and second secondary windings; an input circuit configured to provide an input voltage to the primary winding of the transformer; first, second, third, and fourth switching elements, and a control circuit configured to: control the first, second, third, and fourth switching elements to selectively output a positive or negative output voltage without a separate rectifier stage by selectively controlling ones of the first, second, third, and fourth switching elements based on a commanded output voltage polarity and an input voltage polarity to the transformer; and prior to changing from a first output voltage polarity to a second output voltage polarity, controlling the first, second, third, and fourth switching elements to reverse the power flow to return reactive energy to an input circuit via the transformer.

公开(公告)号：US20240313094A1

公开(公告)日：2024-09-19

申请号：US18414423

申请日：2024-01-16

申请人： Mitsubishi Electric Corporation

发明人： Ayanori GATTO

IPC分类号： H01L29/739 ,  H01L21/265 ,  H01L29/66

CPC分类号： H01L29/7397 ,  H01L21/26513 ,  H01L29/66348

摘要： A semiconductor device includes: a semiconductor substrate; a first semiconductor layer and a second semiconductor layer located in a surface layer of the semiconductor substrate to be excluded from each other; a third semiconductor layer located on an opposite side of the first semiconductor layer and the second semiconductor layer from the semiconductor substrate; a fourth semiconductor layer and a fifth semiconductor layer located on an opposite side of the third semiconductor layer from the semiconductor substrate to be excluded from each other; and a first electrode, a second electrode, and a third electrode each having an insulating surface, and the first electrode extends through the fifth semiconductor layer, and the third semiconductor layer to reach the first semiconductor layer.

公开(公告)号：US20240312860A1

公开(公告)日：2024-09-19

申请号：US18467581

申请日：2023-09-14

申请人： KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION

发明人： Daisuke KOIKE ,  Hisashi TOMITA ,  Yuning TSAI ,  Yutaro HAYASHI

IPC分类号： H01L23/367 ,  H01L23/00 ,  H01L23/373 ,  H01L29/739

CPC分类号： H01L23/367 ,  H01L23/3736 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L29/7393 ,  H01L2224/29139 ,  H01L2224/29147 ,  H01L2224/32245 ,  H01L2224/83201 ,  H01L2224/8348

摘要： A semiconductor device according to an embodiment includes: a semiconductor chip; a conductive sheet provided on the semiconductor chip; and a metal plate provided on the conductive sheet. The metal plate has a step portion that is provided on a lateral surface, or a groove portion that is provided on a bottom surface.

公开(公告)号：US20240304677A1

公开(公告)日：2024-09-12

申请号：US18665569

申请日：2024-05-16

申请人： FUJI ELECTRIC CO., LTD.

发明人： Motoyoshi KUBOUCHI

IPC分类号： H01L29/32 ,  H01L21/22 ,  H01L27/06 ,  H01L29/10 ,  H01L29/739 ,  H01L29/861

CPC分类号： H01L29/32 ,  H01L21/221 ,  H01L27/0664 ,  H01L29/1095 ,  H01L29/7397 ,  H01L29/8613

摘要： Provided is a semiconductor device including: a semiconductor substrate having upper and lower surfaces, provided with a drift region; trench portions reaching the drift region from the upper surface; and a mesa portion interposed between the trench portions. The mesa portion has: a base region between the drift region and the upper surface; a first region having a hydrogen chemical concentration peak at a first depth position; and an emitter region between the drift region and the upper surface and having a doping concentration higher than the base region. The semiconductor device further includes: an interlayer dielectric film covering the upper surface and having a contact hole to expose the upper surface; and a trench contact, below the contact hole, that passes through the emitter region from the upper surface. The first region overlaps the contact hole and locates deeper than a bottom surface of the trench contact.