公开(公告)号：US12125846B2

公开(公告)日：2024-10-22

申请号：US17190029

申请日：2021-03-02

申请人： KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION

发明人： Shoko Hanagata

IPC分类号： H01L27/07 ,  H01L29/06 ,  H01L29/417 ,  H01L29/739 ,  H01L29/868

CPC分类号： H01L27/0716 ,  H01L29/41708 ,  H01L29/7395 ,  H01L29/868 ,  H01L29/0692

摘要： A semiconductor device includes first and second electrodes, first regions of a first conductivity type, second regions of a second conductivity type, a third region of the first conductivity type, fourth regions of the second conductivity type, fifth regions of the second conductivity type. The first and second regions are on the first electrode. The third region is on the first and second regions. The fourth and fifth regions are on the third region. The second electrode is on the fourth and fifth regions. Every second region is directly below a fifth region.

公开(公告)号：US12033941B2

公开(公告)日：2024-07-09

申请号：US17235956

申请日：2021-04-21

申请人： FUJI ELECTRIC CO., LTD.

发明人： Morio Iwamizu

IPC分类号： H01L23/525 ,  H01L21/768 ,  H01L27/02 ,  H01L27/06 ,  H01L27/088 ,  H01L29/868

CPC分类号： H01L23/5256 ,  H01L21/76886 ,  H01L27/0255 ,  H01L27/0629 ,  H01L27/088 ,  H01L29/868

摘要： A trimming circuit configured to output a voltage according to the presence or absence of disconnection of a fuse resistor is provided, including a fuse resistor formed by a polysilicon layer arranged on a semiconductor substrate via an insulating film, a pad for trimming connected to one end of the fuse resistor, an output terminal electrically connected to a connection point between the fuse resistor and the pad, and configured to output a voltage according to the presence or absence of disconnection of the fuse resistor, and a diode formed on the semiconductor substrate, having one end connected to the other end of the fuse resistor.

公开(公告)号：US20240194666A1

公开(公告)日：2024-06-13

申请号：US18444494

申请日：2024-02-16

申请人： STMICROELECTRONICS S.r.l. ,  STMICROELECTRONICS (TOURS) SAS

发明人： Jean-Michel SIMONNET ,  Sophie NGO ,  Simone RASCUNÀ

IPC分类号： H01L27/02 ,  H01L29/04 ,  H01L29/16 ,  H01L29/20 ,  H01L29/417 ,  H01L29/868 ,  H02H9/04

CPC分类号： H01L27/0255 ,  H01L29/04 ,  H01L29/16 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/417 ,  H01L29/868 ,  H02H9/046

摘要： Overvoltage protection circuits are provided. In some embodiments, an overvoltage protection circuit includes a first diode made of a first semiconductor material having a bandgap width greater than that of silicon. A second diode is included and is electrically cross-coupled with the first diode. The second diode is made of a second semiconductor material different from the first semiconductor material.

公开(公告)号：US20240178306A1

公开(公告)日：2024-05-30

申请号：US18432923

申请日：2024-02-05

申请人： Mitsubishi Electric Corporation

发明人： Katsumi NAKAMURA

IPC分类号： H01L29/739 ,  H01L29/06 ,  H01L29/66 ,  H01L29/868

CPC分类号： H01L29/7397 ,  H01L29/0696 ,  H01L29/66333 ,  H01L29/868

摘要： A semiconductor device includes: an N− drift layer of a first conductivity type formed in the semiconductor substrate; a P base layer formed on the N− drift layer; and an N buffer layer of the first conductivity type formed under the N− drift layer and higher in peak impurity concentration than the N− drift layer. The N buffer layer includes: a first buffer layer in which a trap level derived from lattice defect is not detected by a photoluminescence method; and a second buffer layer provided between the first buffer layer and the N− drift layer and in which two types of trap levels derived from lattice defect are detected by the photoluminescence method.

公开(公告)号：US20240170583A1

公开(公告)日：2024-05-23

申请号：US18430609

申请日：2024-02-01

申请人： LEAP Semiconductor Corp.

发明人： Wei-Fan Chen ,  Kuo-Chi Tsai

IPC分类号： H01L29/872 ,  H01L29/06 ,  H01L29/868

CPC分类号： H01L29/872 ,  H01L29/0619 ,  H01L29/868

摘要： A wide-band gap semiconductor device and a method of manufacturing the same are provided. The wide-band gap semiconductor device of the disclosure includes a substrate, an epitaxial layer, an array of merged PN junction Schottky (MPS) diode, and an edge termination area surrounding the array of MPS diode. The epitaxial layer includes a first plane, a second plane, and trenches between the first plane and the second plane. The array of MPS diode is formed in the first plane of the epitaxial layer. The edge termination area includes a floating ring region having floating rings formed in the second plane of the epitaxial layer, and a transition region between the floating ring region and the array of MPS diode. The transition region includes a PIN diode formed in the plurality of trenches and on the epitaxial layer between the trenches.

公开(公告)号：US11990553B2

公开(公告)日：2024-05-21

申请号：US17711013

申请日：2022-03-31

申请人： LEAP Semiconductor Corp.

发明人： Wei-Fan Chen ,  Kuo-Chi Tsai

IPC分类号： H01L29/872 ,  H01L29/06 ,  H01L29/66 ,  H01L29/868

CPC分类号： H01L29/872 ,  H01L29/0619 ,  H01L29/66143 ,  H01L29/868

摘要： A merged PiN Schottky (MPS) diode includes a substrate, a first epitaxial layer of a first conductivity type, doped regions of a second conductivity type, a second epitaxial layer of the first conductivity type, and a Schottky metal layer. The first epitaxial layer is disposed on the first surface of the substrate. The doped regions are disposed in a surface of the first epitaxial layer, wherein the doped regions consist of first portions and second portions, the first portions are electrically floating, and the second portions are electrically connected to a top metal. The second epitaxial layer is disposed on the surface of the first epitaxial layer, wherein trenches are formed in the second epitaxial layer to expose the second portions of the doped regions. The Schottky metal layer is conformally deposited on the second epitaxial layer and the exposed second portions of the doped regions.

公开(公告)号：US11887858B2

公开(公告)日：2024-01-30

申请号：US17725124

申请日：2022-04-20

申请人： KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION

发明人： Shinji Nunotani ,  Shinji Onzuka

IPC分类号： H01L21/78 ,  H01L21/304 ,  H01L21/784 ,  H01L21/268 ,  H01L21/306 ,  H01L21/3065 ,  H01L29/417 ,  H01L29/868 ,  H01L29/872 ,  H01L21/265 ,  H01L29/45 ,  H01L29/78 ,  H01L29/739 ,  H01L21/683 ,  H01L21/283 ,  H01L29/861 ,  H01L29/41 ,  H01L29/06

CPC分类号： H01L21/3043 ,  H01L21/268 ,  H01L21/26513 ,  H01L21/283 ,  H01L21/3065 ,  H01L21/30604 ,  H01L21/6835 ,  H01L21/78 ,  H01L21/784 ,  H01L29/0657 ,  H01L29/41 ,  H01L29/417 ,  H01L29/45 ,  H01L29/7397 ,  H01L29/7813 ,  H01L29/861 ,  H01L29/868 ,  H01L29/872 ,  H01L2221/68327

摘要： A semiconductor device includes a semiconductor part, first and second electrodes. The semiconductor part is provided between the first and second electrodes. A method of manufacturing the device includes forming the first electrode covering a back surface of a wafer after the second electrode is formed on a front surface of the wafer; forming a first groove by selectively removing the first electrode; and dividing the wafer by forming a second groove at the front surface side. The wafer includes a region to be the semiconductor part; and the first and second grooves are provided along a periphery of the region. The first groove is in communication with the first groove. The second groove has a width in a direction along the front surface of the wafer, the width of the first groove being narrower than a width of the first groove in the same direction.

公开(公告)号：US20240014326A1

公开(公告)日：2024-01-11

申请号：US18372226

申请日：2023-09-25

申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION

发明人： Katsuhiko FUKASAKU

IPC分类号： H01L29/868 ,  H01L29/06 ,  H01L29/165 ,  H01L29/36 ,  H01L29/45

CPC分类号： H01L29/868 ,  H01L29/0673 ,  H01L29/165 ,  H01L29/36 ,  H01L29/45

摘要： A diode of the present disclosure includes a stacked structure, and a first connection section and a second connection section provided at respective ends of the stacked structure in a length direction. The stacked structure includes a first structure and a second structure each having a nanowire structure or a nanosheet structure and stacked alternately in a thickness direction. The first connection section has a first conductivity type, and the second connection section has a second conductivity type. The diode further includes a control electrode section formed to extend at least from a top portion to a side surface of the stacked structure and spaced apart from the first connection section and the second connection section. The first connection section and the control electrode section or the second connection section and the control electrode section are connected electrically.

公开(公告)号：US20230420449A1

公开(公告)日：2023-12-28

申请号：US18465914

申请日：2023-09-12

申请人： MW RF Semiconductors, LLC

发明人： Dumitru G. SDRULLA

IPC分类号： H01L27/02 ,  H01L27/06 ,  H01L29/739 ,  H01L29/868 ,  H01L29/872

CPC分类号： H01L27/0292 ,  H01L27/0623 ,  H01L27/0629 ,  H01L29/7395 ,  H01L29/868 ,  H01L29/872

摘要： This disclosure relates to semiconductor devices, and, more particularly, to a semiconductor structure that improves the switching speed of a switch for which the turn-off process depends on the recombination speed of charge carriers. The disclosure describes a semiconductor device formed on a semiconductor substrate that includes a power semiconductor switch having a drift region in the semiconductor substrate, an Extraction Plug in electrical contact with the drift region of the power semiconductor switch, and an extraction device electrically coupled to the Extraction Plug. The extraction device is structured to remove charge carriers from the drift region through the Extraction Plug when the extraction device is turned on. Methods are also described.

公开(公告)号：US20230395656A1

公开(公告)日：2023-12-07

申请号：US18234992

申请日：2023-08-17

申请人： Infineon Technologies AG

发明人： Egle Tylaite ,  Joost Adriaan Willemen

IPC分类号： H01L29/06 ,  H01L29/735 ,  H01L29/74 ,  H01L29/861 ,  H01L29/868

CPC分类号： H01L29/0649 ,  H01L29/0692 ,  H01L29/868 ,  H01L29/7436 ,  H01L29/8611 ,  H01L29/735

摘要： An ESD protection device includes a semiconductor body having an upper surface, a plurality of p-type wells that each extend from the upper surface into the semiconductor body, and a plurality of n-type wells that each extend from the upper surface into the semiconductor body, wherein a total area of electrical insulator disposed between the p-type wells and the adjacent semiconductor body is greater than a total area of electrical insulator disposed between the n-type wells and the adjacent semiconductor body.