- 专利标题： OVERVOLTAGE PROTECTION DEVICE
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申请号： US18444494申请日： 2024-02-16
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公开(公告)号： US20240194666A1公开(公告)日： 2024-06-13
- 发明人: Jean-Michel SIMONNET , Sophie NGO , Simone RASCUNÀ
- 申请人： STMICROELECTRONICS S.r.l. , STMICROELECTRONICS (TOURS) SAS
- 申请人地址： IT Agrate Brianza
- 专利权人： STMICROELECTRONICS S.r.l.,STMICROELECTRONICS (TOURS) SAS
- 当前专利权人： STMICROELECTRONICS S.r.l.,STMICROELECTRONICS (TOURS) SAS
- 当前专利权人地址： IT Agrate Brianza; FR Tours
- 优先权： FR 02245 2019.03.05
- 分案原申请号： US16806257 2020.03.02
- 主分类号： H01L27/02
- IPC分类号： H01L27/02 ; H01L29/04 ; H01L29/16 ; H01L29/20 ; H01L29/417 ; H01L29/868 ; H02H9/04
摘要：
Overvoltage protection circuits are provided. In some embodiments, an overvoltage protection circuit includes a first diode made of a first semiconductor material having a bandgap width greater than that of silicon. A second diode is included and is electrically cross-coupled with the first diode. The second diode is made of a second semiconductor material different from the first semiconductor material.
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