公开(公告)号：US12113116B2

公开(公告)日：2024-10-08

申请号：US18352876

申请日：2023-07-14

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. ,  NATIONAL TAIWAN UNIVERSITY

发明人： Hsien-Wen Wan ,  Yi-Ting Cheng ,  Ming-Hwei Hong ,  Juei-Nai Kwo ,  Bo-Yu Yang ,  Yu-Jie Hong

IPC分类号： H01L29/51 ,  H01L21/02 ,  H01L21/28 ,  H01L29/06 ,  H01L29/08 ,  H01L29/16 ,  H01L29/423 ,  H01L29/49 ,  H01L29/66 ,  H01L29/78 ,  H01L29/786

CPC分类号： H01L29/513 ,  H01L21/02532 ,  H01L21/02603 ,  H01L21/28255 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/16 ,  H01L29/42392 ,  H01L29/4908 ,  H01L29/66545 ,  H01L29/66742 ,  H01L29/66795 ,  H01L29/7851 ,  H01L29/78618 ,  H01L29/78684 ,  H01L29/78696

摘要： A semiconductor device includes a substrate, a semiconductor fin, a silicon layer, a gate structure, gate spacers, and source/drain structures. The semiconductor fin is over the substrate. The silicon layer is over the semiconductor fin. The gate structure is over the silicon layer, in which the gate structure includes an interfacial layer over the silicon layer, a gate dielectric layer over the interfacial layer, and a gate electrode over the gate dielectric layer. The gate spacers are on opposite sidewalls of the gate structure and in contact with the interfacial layer of the gate structure, in which a bottom surface of the interfacial layer is higher than bottom surfaces of the gate spacers. The source/drain structures are on opposite sides of the gate structure.

公开(公告)号：US20240250160A1

公开(公告)日：2024-07-25

申请号：US18623766

申请日：2024-04-01

申请人： HRL Laboratories, LLC

发明人： Biqin Huang

IPC分类号： H01L29/772 ,  H01L21/761 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/16 ,  H01L29/165 ,  H01L29/167 ,  H01L29/66 ,  H01L29/78 ,  H01L29/812

CPC分类号： H01L29/7722 ,  H01L21/761 ,  H01L29/0646 ,  H01L29/0657 ,  H01L29/0843 ,  H01L29/1029 ,  H01L29/16 ,  H01L29/1602 ,  H01L29/1608 ,  H01L29/165 ,  H01L29/167 ,  H01L29/66045 ,  H01L29/66068 ,  H01L29/812 ,  H01L29/0673 ,  H01L29/785

摘要： Presented is a lateral fin static induction transistor including a semi conductive substrate, source and drain regions extending from an optional buffer layer of same or varied thickness supported by the semi conductive substrate, a semi conductive channel electrically coupling the source region to the drain region of the transistor, a portion of the semi conductive channel being a fin and having a face covered by a gated structure, thereby defining a gated channel within the semi conductive channel, the semi conductive channel further including a drift region electrically coupling the gated channel to the drain region of the transistor.

公开(公告)号：US20240222509A1

公开(公告)日：2024-07-04

申请号：US18608294

申请日：2024-03-18

申请人： Intel Corporation

发明人： Bernhard SELL

IPC分类号： H01L29/78 ,  H01L21/02 ,  H01L21/306 ,  H01L21/308 ,  H01L21/8234 ,  H01L27/088 ,  H01L27/092 ,  H01L27/12 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/16 ,  H01L29/165 ,  H01L29/417 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66 ,  H01L29/786 ,  H10B12/00

CPC分类号： H01L29/7853 ,  H01L21/02532 ,  H01L21/30604 ,  H01L21/3083 ,  H01L21/823412 ,  H01L21/823431 ,  H01L27/0886 ,  H01L27/0924 ,  H01L27/1211 ,  H01L29/0657 ,  H01L29/0847 ,  H01L29/1037 ,  H01L29/16 ,  H01L29/165 ,  H01L29/41791 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66636 ,  H01L29/66772 ,  H01L29/66795 ,  H01L29/6681 ,  H01L29/66818 ,  H01L29/785 ,  H01L29/7851 ,  H01L29/7854 ,  H01L29/7856 ,  H01L29/786 ,  H10B12/056 ,  H10B12/36 ,  H01L2924/13067

摘要： Semiconductor devices having necked semiconductor bodies and methods of forming semiconductor bodies of varying width are described. For example, a semiconductor device includes a semiconductor body disposed above a substrate. A gate electrode stack is disposed over a portion of the semiconductor body to define a channel region in the semiconductor body under the gate electrode stack. Source and drain regions are defined in the semiconductor body on either side of the gate electrode stack. Sidewall spacers are disposed adjacent to the gate electrode stack and over only a portion of the source and drain regions. The portion of the source and drain regions under the sidewall spacers has a height and a width greater than a height and a width of the channel region of the semiconductor body.

公开(公告)号：US12027592B2

公开(公告)日：2024-07-02

申请号：US17850310

申请日：2022-06-27

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Martin Christopher Holland ,  Blandine Duriez

IPC分类号： H01L29/167 ,  H01L21/02 ,  H01L29/08 ,  H01L29/10 ,  H01L29/66 ,  H01L29/78 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L29/417

CPC分类号： H01L29/167 ,  H01L21/02381 ,  H01L29/0847 ,  H01L29/1054 ,  H01L29/66795 ,  H01L29/66803 ,  H01L29/785 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L29/41783

摘要： A field effect transistor includes a channel made of germanium and a source/drain portion. The source/drain portion includes a germanium layer, an interfacial epitaxial layer over the germanium layer, a semiconductor layer over the interfacial epitaxial layer, and a conducting layer over the semiconductor layer. The interfacial epitaxial layer contains germanium and an element from the semiconductor layer and has a thickness in a range from about 1 nm to about 3 nm.

公开(公告)号：US12009428B2

公开(公告)日：2024-06-11

申请号：US17812874

申请日：2022-07-15

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chih-Chuan Yang ,  Kuo-Hsiu Hsu ,  Feng-Ming Chang ,  Kian-Long Lim ,  Lien Jung Hung

IPC分类号： H01L29/78 ,  H01L27/088 ,  H01L29/06 ,  H01L29/16 ,  H01L29/417 ,  H01L29/66

CPC分类号： H01L29/785 ,  H01L27/0886 ,  H01L29/0665 ,  H01L29/16 ,  H01L29/41791 ,  H01L29/66545 ,  H01L29/6681 ,  H01L29/66818

摘要： A semiconductor device including nanosheet field-effect transistors (NSFETs) in a first region and fin field-effect transistors (FinFETs) in a second region and methods of forming the same are disclosed. In an embodiment, a device includes a first memory cell, the first memory cell including a first transistor including a first channel region, the first channel region including a first plurality of semiconductor nanostructures; and a second transistor including a second channel region, the second channel region including a semiconductor fin.

公开(公告)号：US11990508B2

公开(公告)日：2024-05-21

申请号：US17405455

申请日：2021-08-18

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Andrew M. Greene ,  Yao Yao ,  Ruilong Xie ,  Veeraraghavan S. Basker

IPC分类号： H01L29/06 ,  H01L29/16 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L29/0669 ,  H01L29/0653 ,  H01L29/16 ,  H01L29/66666 ,  H01L29/7827

摘要： Semiconductor devices and methods of forming the same include recessing sacrificial layers in a stack of alternating sacrificial layers and channel layers using a first etch to form curved recesses at sidewalls of each sacrificial layer in the stack, with tails of sacrificial material being present at a top and bottom of each curved recess. Dielectric plugs are formed that each partially fill a respective curved recess, leaving exposed at least a portion of each tail of sacrificial material. The tails of sacrificial material are etched back using a second etch to expand the recesses. Inner spacers are formed in the expanded recesses.

公开(公告)号：US11935884B2

公开(公告)日：2024-03-19

申请号：US18060448

申请日：2022-11-30

申请人： STMICROELECTRONICS S.r.l. ,  STMICROELECTRONICS (TOURS) SAS

发明人： Jean-Michel Simonnet ,  Sophie Ngo ,  Simone Rascuna'

IPC分类号： H01L27/02 ,  H01L29/04 ,  H01L29/16 ,  H01L29/20 ,  H01L29/417 ,  H01L29/868 ,  H02H9/04

CPC分类号： H01L27/0255 ,  H01L29/04 ,  H01L29/16 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/417 ,  H01L29/868 ,  H02H9/046

摘要： Overvoltage protection circuits are provided. In some embodiments, an overvoltage protection circuit includes a first diode made of a first semiconductor material having a bandgap width greater than that of silicon. A second diode is included and is electrically cross-coupled with the first diode. The second diode is made of a second semiconductor material different from the first semiconductor material.

公开(公告)号：US11894462B2

公开(公告)日：2024-02-06

申请号：US17511134

申请日：2021-10-26

申请人： Adeia Semiconductor Solutions LLC

发明人： Huiming Bu ,  Kangguo Cheng ,  Dechao Guo ,  Sivananda K. Kanakasabapathy ,  Peng Xu

IPC分类号： H01L29/78 ,  H01L29/66 ,  H01L29/10 ,  H01L29/16 ,  H01L29/161 ,  H01L29/06 ,  H01L21/8234 ,  H01L21/8238 ,  H01L21/84 ,  H01L21/3065 ,  H01L21/324

CPC分类号： H01L29/785 ,  H01L21/3065 ,  H01L21/324 ,  H01L21/823431 ,  H01L21/823821 ,  H01L21/845 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/1037 ,  H01L29/16 ,  H01L29/161 ,  H01L29/66795 ,  H01L29/66818 ,  H01L29/7851

摘要： A semiconductor device includes one or more fins. Each fin includes a top channel portion formed from a channel material, a middle portion, and a bottom substrate portion formed from a same material as an underlying substrate. An oxide layer is formed between the bottom substrate portion of each fin and the isolation layer, with a space between a sidewall of at least a top portion of the isolation dielectric layer and an adjacent sidewall of the one or more fins, above the oxide layer. A gate dielectric, protruding into the space and in contact with the middle portion, is formed over the one or more fins and has a portion formed from a material different from the oxide layer.

公开(公告)号：US20240038850A1

公开(公告)日：2024-02-01

申请号：US18166230

申请日：2023-02-08

申请人： Kabushiki Kaisha Toshiba ,  Toshiba Electronic Devices & Storage Corporation

发明人： Masatsugu NAGAI ,  Kazuyuki SATO ,  Shingo SATO

IPC分类号： H01L29/36 ,  H01L29/16 ,  H01L29/78 ,  H01L29/66 ,  H01L21/225 ,  H01L21/311 ,  H01L21/3205 ,  H01L21/324

CPC分类号： H01L29/36 ,  H01L29/16 ,  H01L29/7827 ,  H01L29/66666 ,  H01L21/2253 ,  H01L21/31111 ,  H01L21/32051 ,  H01L21/324

摘要： A semiconductor device of embodiments includes: a first electrode; a second electrode; a semiconductor layer provided between the first electrode and the second electrode, having a first face and a second face, and containing silicon; a first semiconductor region of n-type; a second semiconductor region of p-type disposed the first semiconductor region and the first face; a third semiconductor region of n-type between the second semiconductor region and the first face; a gate electrode facing the second semiconductor region; and a metal silicide layer between the first electrode and the second semiconductor region and between the first electrode and the third semiconductor region, including a top surface, a first bottom surface in contact with the third semiconductor region, and containing gold or a platinum group element. The n-type impurity concentration in the third semiconductor region monotonically decreases from the first bottom surface toward the second electrode.

公开(公告)号：US11889693B2

公开(公告)日：2024-01-30

申请号：US17366471

申请日：2021-07-02

申请人： Micron Technology, Inc.

发明人： Srikant Jayanti ,  Fatma Arzum Simsek-Ege ,  Pavan Kumar Reddy Aella

IPC分类号： H10B43/27 ,  H10B41/27 ,  H01L21/311 ,  H01L21/28 ,  H01L29/66 ,  H01L29/788 ,  H01L21/02 ,  H01L21/3213 ,  H10B99/00 ,  H01L29/04 ,  H01L29/16 ,  H01L29/51 ,  H01L29/792 ,  H10B41/20

CPC分类号： H10B43/27 ,  H01L21/022 ,  H01L21/0234 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31111 ,  H01L21/32134 ,  H01L29/04 ,  H01L29/16 ,  H01L29/40114 ,  H01L29/40117 ,  H01L29/511 ,  H01L29/518 ,  H01L29/66825 ,  H01L29/7883 ,  H01L29/7889 ,  H10B41/27 ,  H10B99/00 ,  H01L29/7926 ,  H10B41/20

摘要： Semiconductor structures may include a stack of alternating dielectric materials and control gates, charge storage structures laterally adjacent to the control gates, a charge block material between each of the charge storage structures and the laterally adjacent control gates, and a pillar extending through the stack of alternating oxide materials and control gates. Each of the dielectric materials in the stack has at least two portions of different densities and/or different rates of removal. Also disclosed are methods of fabricating such semiconductor structures.