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2929 条记录 (耗时 0.032 秒)

    Wiring device having a plurality of protrusions
    2.
    发明授权
    Wiring device having a plurality of protrusions 有权

    公开(公告)号：US12119574B2

    公开(公告)日：2024-10-15

    申请号：US17689759

    申请日：2022-03-08

    申请人： Kabushiki Kaisha Toshiba ,  Toshiba Electronic Devices & Storage Corporation

    发明人： Kenichi Agawa

    IPC分类号： H01R12/53 ,  H01R12/88 ,  H05K1/14

    CPC分类号： H01R12/53 ,  H05K1/144 ,  H05K2201/042 ,  H05K2201/10287 ,  H05K2201/10393

    摘要： A wiring device has a plate having a first surface and a second surface and a first protrusion having a side surface capable of locking a first substrate and a first upper surface with a plurality of first grooves and the first substrate including a terminal on a surface of the first substrate. Each of the first grooves accommodates a coating of a wiring including a conductor and the coating, the first protrusion extending in a third direction. The holder includes a plurality of connection portions, and the holder includes a plurality of second grooves, each of the second grooves capable of accommodating the conductor exposed from the coating. The cover is rotatably openable and closable with respect to the plate, and the cover brings the conductor into pressure contact with the terminal between the first protrusion and the holder.

    High frequency switch and semiconductor device
    4.
    发明授权
    High frequency switch and semiconductor device 有权

    公开(公告)号：US12113523B2

    公开(公告)日：2024-10-08

    申请号：US18180439

    申请日：2023-03-08

    申请人： Kabushiki Kaisha Toshiba ,  Toshiba Electronic Devices & Storage Corporation

    发明人： Takayuki Teraguchi

    IPC分类号： H03K17/687

    CPC分类号： H03K17/687

    摘要： According to an embodiment, an SPnT-type high frequency switch includes a plurality of first MOS transistors, second MOS transistors, and a capacitor. The plurality of first MOS transistors are connected in series between one of a plurality of RF terminals and an RF common terminal. The second MOS transistors have ends each connected to adjacent first MOS transistors among the first MOS transistors. The capacitor is connected between ground and another end of a second MOS transistor having one end connected to another end of a first MOS transistor having one end connected to the one of the RF terminals among the first and second MOS transistors.

    Semiconductor device
    5.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US12113126B2

    公开(公告)日：2024-10-08

    申请号：US17686809

    申请日：2022-03-04

    申请人： KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION

    发明人： Kaori Fuse ,  Keiko Kawamura ,  Takako Motai ,  Tomoko Matsudai ,  Yoko Iwakaji

    IPC分类号： H01L29/739 ,  H01L29/868

    CPC分类号： H01L29/7397 ,  H01L29/868

    摘要： A semiconductor device includes: a first electrode; a first semiconductor layer of first conductivity type provided on the first electrode; a second semiconductor layer of second conductivity type provided on the first semiconductor layer; a second electrode provided on the second semiconductor layer; a first trench reaching the first semiconductor layer from the second semiconductor layer; a first semiconductor region provided in the second semiconductor layer, the first semiconductor region being in contact with the first trench and the first semiconductor region having a higher concentration of impurities of second conductivity type than the second semiconductor layer; and a first insulating film provided in the second semiconductor layer and the first insulating film being in contact with the first semiconductor region.

    Magnetic disk device
    6.
    发明授权
    Magnetic disk device 有权

    公开(公告)号：US12112779B1

    公开(公告)日：2024-10-08

    申请号：US18236903

    申请日：2023-08-22

    申请人： Kabushiki Kaisha Toshiba ,  Toshiba Electronic Devices & Storage Corporation

    发明人： Toru Watanabe

    IPC分类号： G11B5/60

    CPC分类号： G11B5/607 ,  G11B5/6011 ,  G11B5/6029

    摘要： According to one embodiment, a magnetic disk device includes a magnetic disk, a magnetic head that includes a write head configured to write data to the magnetic disk, a read head configured to read data from the magnetic disk, and a heater configured to adjust a flying height of the write head, and a controller that includes a first detection unit configured to detect the flying height of the write head, a second detection unit configured to detect a positioning error of the magnetic head with respect to a track of the magnetic disk, and a memory configured to store a first threshold and a second threshold.

    Magnetic disk device and control method
    8.
    发明授权
    Magnetic disk device and control method 有权

    公开(公告)号：US12106773B2

    公开(公告)日：2024-10-01

    申请号：US18181961

    申请日：2023-03-10

    申请人： Kabushiki Kaisha Toshiba ,  Toshiba Electronic Devices & Storage Corporation

    发明人： Takuya Mori ,  Tetsuo Kuribayashi ,  Kazuo Chokki

    IPC分类号： G11B20/18 ,  G11B5/012 ,  G11B19/04

    CPC分类号： G11B19/045 ,  G11B5/012 ,  G11B2220/2516

    摘要： According to one embodiment, a magnetic disk device includes a memory and a controller. The memory stores, for a predetermined track on a magnetic disk in the device, a counter, a counter threshold, and weights. The weights are individually set for divided areas of the predetermined track. The weights each have magnitude inversely proportional to a guaranteed number of times of data readout. When writing to an adjacent track of one or more of the divided areas is executed, the controller multiplies a number of times of writing by the weight corresponding to the one or more of the divided areas and adds the number of times of writing to the counter. When a numerical value of the counter reaches the counter threshold, the controller executes refresh to rewrite data in the predetermined track or executes reading for determining whether or not to perform the refresh.

    SEMICONDUCTOR DEVICE
    9.
    发明公开
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20240321967A1

    公开(公告)日：2024-09-26

    申请号：US18364860

    申请日：2023-08-03

    申请人： Kabushiki Kaisha Toshiba ,  Toshiba Electronic Devices & Storage Corporation

    发明人： Shunsuke ASABA ,  Hiroshi KONO

    IPC分类号： H01L29/16 ,  H01L29/417 ,  H01L29/78

    CPC分类号： H01L29/1608 ,  H01L29/41766 ,  H01L29/7802

    摘要： A semiconductor device according to an embodiment includes: a silicon carbide layer having a first face and a second face; first and second gate electrodes; a first silicon carbide region; a second silicon carbide region between the first silicon carbide region and the first face; a third silicon carbide region between the second silicon carbide region and the first face; a fourth silicon carbide region between the third silicon carbide region and the first face; a first electrode; and a second electrode. The first electrode includes a first portion, and the first portion includes a first contact face in contact with the fourth silicon carbide region, a second contact face in contact with the fourth silicon carbide region, a third contact face in contact with the fourth silicon carbide region and the third silicon carbide region, and a fourth contact face in contact with the third silicon carbide region.