公开(公告)号：US20240355815A1

公开(公告)日：2024-10-24

申请号：US18763542

申请日：2024-07-03

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Min-Feng Kao ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Hsing-Chih Lin

IPC分类号： H01L27/06 ,  H01L21/265 ,  H01L23/00 ,  H01L23/522 ,  H01L29/66 ,  H01L29/861

CPC分类号： H01L27/0676 ,  H01L21/26513 ,  H01L23/5226 ,  H01L24/08 ,  H01L28/40 ,  H01L29/66136 ,  H01L29/861 ,  H01L2224/08145

摘要： A semiconductor device and a method of forming the same are provided. The semiconductor device includes a first substrate, a capacitor within the first substrate, a diode structure within the first substrate adjacent the capacitor, and a first interconnect structure over the capacitor and the diode structure. A first conductive via of the first interconnect structure electrically couples the capacitor to the diode structure.

公开(公告)号：US20240355814A1

公开(公告)日：2024-10-24

申请号：US18760507

申请日：2024-07-01

申请人： Mitsubishi Electric Corporation

发明人： Munenori IKEDA ,  Shinya SONEDA ,  Kenji HARADA

IPC分类号： H01L27/06 ,  H01L21/765 ,  H01L29/10 ,  H01L29/40 ,  H01L29/66 ,  H01L29/739 ,  H01L29/861

CPC分类号： H01L27/0664 ,  H01L21/765 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/66136 ,  H01L29/66348 ,  H01L29/7397 ,  H01L29/8613

摘要： The semiconductor device according to the present application includes: a hole injection region including a hole injection layer and a semiconductor layer of a second conductivity type; a diode region including an anode layer of a second conductivity type and a cathode layer of a first conductivity type; a boundary portion semiconductor layer of a second conductivity type provided between the diode region and the hole injection region and provided on a first main surface side; a carrier injection suppression layer of a first conductivity type provided in a surface layer of the boundary portion semiconductor layer; and a semiconductor layer of a second conductivity type provided to protrude from the hole injection region on a second main surface side.

公开(公告)号：US12113064B2

公开(公告)日：2024-10-08

申请号：US17018486

申请日：2020-09-11

申请人： ROHM CO., LTD.

发明人： Keishi Watanabe ,  Junya Yamagami

IPC分类号： H01L27/08 ,  H01L29/861 ,  H01L29/866

CPC分类号： H01L27/0814 ,  H01L29/861 ,  H01L29/866

摘要： The present disclosure provides a diode chip capable of attaining excellent electrical characteristics.
The present disclosure provides a diode chip (1), including: a semiconductor chip (10) having a first main surface (11); a first pin junction portion (31) formed on a surface of the first main surface (11) with a first polarity direction; a first diode pair (37) (rectifier pair) including a first pn junction portion (35) separated from the first pin junction portion (31) and formed in the semiconductor chip (10) with the first polarity direction and a first reversed pin junction portion (38) connected to the first pn junction portion (35) in reversed direction and formed on the first main surface (11) with a second polarity direction; and a first junction separation trench (46) formed on the first main surface (11) in a manner of separating the first pin junction portion (31) and the first diode pair (37).

公开(公告)号：US20240321863A1

公开(公告)日：2024-09-26

申请号：US18736566

申请日：2024-06-07

申请人： Alpha and Omega Semiconductor (Cayman) Ltd.

发明人： Shekar Mallikarjunaswamy

IPC分类号： H01L27/02 ,  H01L27/08 ,  H01L29/66 ,  H01L29/861

CPC分类号： H01L27/0255 ,  H01L27/0262 ,  H01L27/0814 ,  H01L29/66098 ,  H01L29/861

摘要： A transient voltage suppressing (TVS) protection device includes a first high-side steering diode having an anode terminal coupled to a first protected node and a cathode terminal coupled to a second node; and a first low-side steering diode having a cathode terminal coupled to the first protected node and an anode terminal coupled to a third node, wherein the first low-side steering diode comprises a silicon controlled rectifier including alternating p-type and n-type regions, the outermost p-type region forming the anode terminal and the outermost n-type region forming the cathode terminal, the n-type region between a pair of p-type regions being substantially depleted at a bias voltage of zero volt.

公开(公告)号：US12094869B2

公开(公告)日：2024-09-17

申请号：US18366010

申请日：2023-08-07

申请人： Samsung Electronics Co., Ltd.

发明人： Byounghak Hong ,  Seungchan Yun ,  Kang-ill Seo

IPC分类号： H01L27/02 ,  H01L21/8238 ,  H01L27/07 ,  H01L29/739 ,  H01L29/861

CPC分类号： H01L27/0255 ,  H01L21/823807 ,  H01L21/823885 ,  H01L27/0727 ,  H01L29/7391 ,  H01L29/861

摘要： Diode structures of stacked devices and methods of forming the same are provided. Diode structures may include a substrate, an upper semiconductor layer that is spaced apart from the substrate in a vertical direction, an upper thin semiconductor layer protruding from a side surface of the upper semiconductor layer in a first horizontal direction, a lower semiconductor layer that is between the substrate and the upper semiconductor layer and has a first conductivity type, a lower thin semiconductor layer protruding from a side surface of the lower semiconductor layer in the first horizontal direction, a first diode contact that is electrically connected to the lower semiconductor layer, and a second diode contact that is electrically connected to one of the upper semiconductor layer and a portion of the substrate. The one of the upper semiconductor layer and the portion of the substrate may have a second conductivity type.

公开(公告)号：US20240290834A1

公开(公告)日：2024-08-29

申请号：US18214221

申请日：2023-06-26

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Jaehong LEE ,  Seung Min Song ,  Kang-ill Seo

IPC分类号： H01L29/06 ,  H01L27/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786 ,  H01L29/861

CPC分类号： H01L29/0653 ,  H01L27/0629 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/42392 ,  H01L29/775 ,  H01L29/78696 ,  H01L29/8611

摘要： Provided is a semiconductor device including: a 1st source/drain region and a 1st backside contact structure, vertically below the 1st source/drain region, connected to the 1st source/drain region; a 2nd source/drain region and a 1st placeholder isolation structure vertically below the 2nd source/drain region; and a backside isolation structure, on a back side of the semiconductor device, surrounding the 1st backside contact structure and the 1st placeholder isolation structure.

公开(公告)号：US20240282849A1

公开(公告)日：2024-08-22

申请号：US18421356

申请日：2024-01-24

申请人： DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE Technologies Corporation

发明人： Takaya SHIMONO ,  Yohei IWAHASHI

IPC分类号： H01L29/78 ,  H01L27/06 ,  H01L29/06 ,  H01L29/66 ,  H01L29/861

CPC分类号： H01L29/7803 ,  H01L27/0629 ,  H01L29/0696 ,  H01L29/6609 ,  H01L29/66712 ,  H01L29/7813 ,  H01L29/861

摘要： A semiconductor device includes an element region having a gate switching element, and a temperature sensing region having a temperature sensing diode. The gate switching element in the element region includes gate trenches, gate electrodes and an interlayer insulating layer covering an upper surface of each of the gate electrodes in the gate trenches. The temperature sensing diode in the temperature sensing region includes an anode region, a cathode region, first dummy trenches provided in the anode region, a first insulating layer provided in each of the first dummy trenches, second dummy trenches provided in the cathode region, and a second insulating layer provided in each of the second dummy trenches.

公开(公告)号：US12068312B2

公开(公告)日：2024-08-20

申请号：US17442019

申请日：2020-03-13

申请人： Hitachi Energy Ltd

发明人： Charalampos Papadopoulos ,  Munaf Rahimo ,  Chiara Corvasce

IPC分类号： H01L27/00 ,  H01L27/07 ,  H01L29/06 ,  H01L29/739 ,  H01L29/861 ,  H01L29/78

CPC分类号： H01L27/0727 ,  H01L29/0696 ,  H01L29/7397 ,  H01L29/8611 ,  H01L29/7805 ,  H01L29/8613

摘要： A reverse conducting insulated gate power semiconductor device is provided which comprises a plurality of active unit cells (40) and a pilot diode unit cell (50) comprising a second conductivity type anode region (51) in direct contact with a first main electrode (21) and extending from a first main side (11) to a first depth (d1). Each active unit cell (40) comprises a first conductivity type first source layer (41a) in direct contact with the first main electrode (21), a second conductivity type base layer (42) and a first gate electrode (47a), which is separated from the first source layer (41a) and the second conductivity type base layer (42) by a first gate insulating layer (46a) to form a first field effect transistor structure. A lateral size (w) of the anode region (51) in an orthogonal projection onto a vertical plane perpendicular to the first main side (11) is equal to or less than 1 μm. On a first lateral side surface of the anode region (51) a first insulating layer (52a) is arranged and on an opposing second lateral side surface of the anode region (51) a second insulating layer (52b) is arranged. And a distance between the first insulating layer (52a) and the second insulating layer (52b) is equal to or less than 1 μm, the first insulating layer (52a) extending vertically from the first main side (11) to a second depth (d2), and the second insulating layer (52b) extending vertically from the first main side (11) to a third depth (d3), wherein the first depth (d1) is less than the second depth (d2) and less than the third depth (d3).

公开(公告)号：US12068310B2

公开(公告)日：2024-08-20

申请号：US17124817

申请日：2020-12-17

申请人： Mitsubishi Electric Corporation

发明人： Munenori Ikeda ,  Shinya Soneda ,  Kenji Harada

IPC分类号： H01L27/06 ,  H01L21/765 ,  H01L29/10 ,  H01L29/40 ,  H01L29/66 ,  H01L29/739 ,  H01L29/861

CPC分类号： H01L27/0664 ,  H01L21/765 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/66136 ,  H01L29/66348 ,  H01L29/7397 ,  H01L29/8613

摘要： The semiconductor device according to the present application includes: a hole injection region including a hole injection layer and a semiconductor layer of a second conductivity type; a diode region including an anode layer of a second conductivity type and a cathode layer of a first conductivity type; a boundary portion semiconductor layer of a second conductivity type provided between the diode region and the hole injection region and provided on a first main surface side; a carrier injection suppression layer of a first conductivity type provided in a surface layer of the boundary portion semiconductor layer; and a semiconductor layer of a second conductivity type provided to protrude from the hole injection region on a second main surface side.

公开(公告)号：US12062726B2

公开(公告)日：2024-08-13

申请号：US18301899

申请日：2023-04-17

申请人： ROHM CO., LTD.

发明人： Masatoshi Aketa ,  Yuta Yokotsuji

IPC分类号： H01L29/872 ,  H01L23/535 ,  H01L29/06 ,  H01L29/08 ,  H01L29/16 ,  H01L29/20 ,  H01L29/36 ,  H01L29/66 ,  H01L29/861

CPC分类号： H01L29/872 ,  H01L23/535 ,  H01L29/06 ,  H01L29/0607 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/0692 ,  H01L29/08 ,  H01L29/1602 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/36 ,  H01L29/66143 ,  H01L29/861 ,  H01L29/8613 ,  H01L29/8725

摘要： The semiconductor device of the present invention includes a first conductivity type semiconductor layer made of a wide bandgap semiconductor and a Schottky electrode formed to come into contact with a surface of the semiconductor layer, and has a threshold voltage Vth of 0.3 V to 0.7 V and a leakage current Jr of 1×10−9 A/cm2 to 1×10−4 A/cm2 in a rated voltage VR.