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公开(公告)号：US20220037514A1
公开(公告)日：2022-02-03
申请号：US17318894
申请日：2021-05-12
发明人： Kenji Harada , Kakeru Otsuka , Hirofumi Oki
IPC分类号： H01L29/739 , H01L29/861 , H01L29/10
摘要： A semiconductor device includes a semiconductor substrate, a transistor region, a diode region, a boundary trench gate, and a carrier control region. The boundary trench gate is provided in a boundary portion between the transistor region and the diode region.
The carrier control region is provided as a surface layer of the semiconductor substrate at a position closer to the boundary trench gate than the source layer located between the boundary trench gate and the trench gate. A concentration of first conductivity type impurities contained in the carrier control region is higher than a concentration of the first conductivity type impurities contained in the source layer or a concentration of second conductivity type impurities contained in the carrier control region is lower than a concentration of the second conductivity type impurities contained in the source layer.-
公开(公告)号：US10720395B2
公开(公告)日：2020-07-21
申请号：US15837387
申请日：2017-12-11
发明人： Tetsuo Takahashi , Masayoshi Tarutani , Kazuhiko Sakutani , Kenji Harada , Masao Takata , Kouichi In
IPC分类号： H01L23/00 , H01L29/06 , H01L23/29 , H01L23/31 , H01L21/02 , H01L21/78 , H01L23/544 , H01L21/304
摘要： There is provided a semiconductor device having a structure that can suppress occurrence of chipping in a device region and that can reduce manufacturing cost of the semiconductor device. A semiconductor device includes a substrate and a first amorphous insulating film. The substrate has a main surface and an end surface. The main surface includes a peripheral region and a device region. The first amorphous insulating film is disposed on the peripheral region, and is separated from the device region. The first amorphous insulating film extends along the end surface in the form of a stripe. The first amorphous insulating film is flush with the end surface.
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公开(公告)号：US11495678B2
公开(公告)日：2022-11-08
申请号：US17318894
申请日：2021-05-12
发明人： Kenji Harada , Kakeru Otsuka , Hirofumi Oki
IPC分类号： H01L29/739 , H01L29/10 , H01L29/861
摘要： A semiconductor device includes a semiconductor substrate, a transistor region, a diode region, a boundary trench gate, and a carrier control region. The boundary trench gate is provided in a boundary portion between the transistor region and the diode region. The carrier control region is provided as a surface layer of the semiconductor substrate at a position closer to the boundary trench gate than the source layer located between the boundary trench gate and the trench gate. A concentration of first conductivity type impurities contained in the carrier control region is higher than a concentration of the first conductivity type impurities contained in the source layer or a concentration of second conductivity type impurities contained in the carrier control region is lower than a concentration of the second conductivity type impurities contained in the source layer.
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公开(公告)号：US11031357B2
公开(公告)日：2021-06-08
申请号：US16895837
申请日：2020-06-08
发明人： Tetsuo Takahashi , Masayoshi Tarutani , Kazuhiko Sakutani , Kenji Harada , Masao Takata , Kouichi In
IPC分类号： H01L23/00 , H01L29/06 , H01L23/29 , H01L23/31 , H01L21/02 , H01L21/78 , H01L23/544 , H01L21/304
摘要： There is provided a semiconductor device having a structure that can suppress occurrence of chipping in a device region and that can reduce manufacturing cost of the semiconductor device. A semiconductor device includes a substrate and a first amorphous insulating film. The substrate has a main surface and an end surface. The main surface includes a peripheral region and a device region. The first amorphous insulating film is disposed on the peripheral region, and is separated from the device region. The first amorphous insulating film extends along the end surface in the form of a stripe. The first amorphous insulating film is flush with the end surface.
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公开(公告)号：US12068310B2
公开(公告)日：2024-08-20
申请号：US17124817
申请日：2020-12-17
发明人： Munenori Ikeda , Shinya Soneda , Kenji Harada
IPC分类号： H01L27/06 , H01L21/765 , H01L29/10 , H01L29/40 , H01L29/66 , H01L29/739 , H01L29/861
CPC分类号： H01L27/0664 , H01L21/765 , H01L29/1095 , H01L29/407 , H01L29/66136 , H01L29/66348 , H01L29/7397 , H01L29/8613
摘要： The semiconductor device according to the present application includes: a hole injection region including a hole injection layer and a semiconductor layer of a second conductivity type; a diode region including an anode layer of a second conductivity type and a cathode layer of a first conductivity type; a boundary portion semiconductor layer of a second conductivity type provided between the diode region and the hole injection region and provided on a first main surface side; a carrier injection suppression layer of a first conductivity type provided in a surface layer of the boundary portion semiconductor layer; and a semiconductor layer of a second conductivity type provided to protrude from the hole injection region on a second main surface side.
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公开(公告)号：US12009360B2
公开(公告)日：2024-06-11
申请号：US17454415
申请日：2021-11-10
发明人： Munenori Ikeda , Tetsuya Nitta , Kenji Harada
IPC分类号： H01L27/06 , H01L21/225 , H01L21/265 , H01L21/266 , H01L27/07 , H01L29/06 , H01L29/08 , H01L29/10 , H01L29/66 , H01L29/739 , H01L29/861
CPC分类号： H01L27/0664 , H01L21/2253 , H01L21/26513 , H01L21/266 , H01L27/0727 , H01L29/0696 , H01L29/0834 , H01L29/1095 , H01L29/66136 , H01L29/66348 , H01L29/7397 , H01L29/8613
摘要： An IGBT region includes: an n-type carrier accumulation layer provided to be in contact with the n−-type drift layer on the first main surface side of the n−-type drift layer and having a higher n-type impurity concentration than the n−-type drift layer, a p-type base layer provided between the n-type carrier accumulation layer and the first main surface, an n+-type emitter layer selectively provided in a surface layer portion of the p-type base layer, and a gate electrode provided to face the n+-type emitter layer and the p-type base layer with an interposition of an insulating film. A diode region includes a p-type anode layer provided between the n−-type drift layer and the first main surface and provided to a position deeper from the first main surface than a boundary between the n-type carrier accumulation layer and the n−-type drift layer.
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公开(公告)号：US10896863B2
公开(公告)日：2021-01-19
申请号：US16349149
申请日：2017-01-13
发明人： Yosuke Nakata , Shinya Akao , Kenji Harada
IPC分类号： H01L23/367 , H01L21/02 , H01L21/027 , H01L21/311 , H01L21/3213 , H01L23/31 , H01L23/495 , H01L23/00 , H01L29/06 , H01L29/40 , H01L29/417 , H01L29/45
摘要： A semiconductor substrate (1) has a front surface and a rear surface facing each other. A gate wiring (2) and first and second front surface electrodes (3,4) are provided on the front surface of the semiconductor substrate (1). The first and second front surface electrodes (3,4) are separated from each other by the gate wiring (2). An insulating film (7) covers the gate wiring (2). An electrode layer (8) is provided on the insulating film (7) and the first and second front surface electrodes (3,4) across the gate wiring (2). A rear surface electrode (9) is provided on the rear surface of the semiconductor substrate (1). A first plated electrode (10) is provided on the electrode layer (8). A second plated electrode (11) is provided on the rear surface electrode (9).
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公开(公告)号：US10756029B2
公开(公告)日：2020-08-25
申请号：US15837387
申请日：2017-12-11
发明人： Tetsuo Takahashi , Masayoshi Tarutani , Kazuhiko Sakutani , Kenji Harada , Masao Takata , Kouichi In
IPC分类号： H01L23/00 , H01L29/06 , H01L23/29 , H01L23/31 , H01L21/02 , H01L21/78 , H01L23/544 , H01L21/304
摘要： There is provided a semiconductor device having a structure that can suppress occurrence of chipping in a device region and that can reduce manufacturing cost of the semiconductor device. A semiconductor device includes a substrate and a first amorphous insulating film. The substrate has a main surface and an end surface. The main surface includes a peripheral region and a device region. The first amorphous insulating film is disposed on the peripheral region, and is separated from the device region. The first amorphous insulating film extends along the end surface in the form of a stripe. The first amorphous insulating film is flush with the end surface.
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公开(公告)号：US11276773B2
公开(公告)日：2022-03-15
申请号：US16950047
申请日：2020-11-17
发明人： Shinya Soneda , Kenji Harada , Kakeru Otsuka
IPC分类号： H01L29/739 , H01L29/06
摘要： A semiconductor device includes: first diode trench gates extending along a first main surface from a first end side of a cell region toward a second end side thereof opposite to the first end side, the first diode trench gates being disposed adjacent to each other at a first spacing; a boundary trench gate connected to end portions of the first diode trench gates and extending in a direction intersecting a direction of extension of the first diode trench gates; and second diode trench gates having end portions connected to the boundary trench gate and extending toward the second end side of the cell region.
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公开(公告)号：US11239329B2
公开(公告)日：2022-02-01
申请号：US16783115
申请日：2020-02-05
发明人： Shinya Soneda , Tetsuya Nitta , Kenji Harada
IPC分类号： H01L29/417 , H01L29/45 , H01L23/00 , H01L29/16 , H01L29/20
摘要： According to an aspect of the present disclosure, a semiconductor device includes a semiconductor substrate, a lower electrode provided on the semiconductor substrate, an insulating film that is provided on the semiconductor substrate and surrounds the lower electrode and a metal film that is provided on the lower electrode and includes a convex portion on an upper surface thereof, wherein the convex portion includes a first portion extending in a first direction parallel to an upper surface of the semiconductor substrate, and a second portion extending in a second direction that is parallel to the upper surface of the semiconductor substrate and intersects the first direction, and the metal film is thinner than the insulating film.
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