公开(公告)号：US11901444B2

公开(公告)日：2024-02-13

申请号：US17661843

申请日：2022-05-03

申请人： Mitsubishi Electric Corporation

发明人： Ryu Kamibaba ,  Tetsuo Takahashi ,  Akihiko Furukawa

IPC分类号： H01L29/739 ,  H01L29/78 ,  H01L29/08 ,  H01L27/06 ,  H01L21/04

CPC分类号： H01L29/7397 ,  H01L21/0465 ,  H01L27/0629 ,  H01L29/083 ,  H01L29/7813

摘要： Examples of a semiconductor device includes a transistor region formed in a semiconductor substrate having a first conductivity type drift layer, and a diode region formed to be adjacent to the transistor region in the semiconductor substrate, wherein the diode region has a second conductivity type anode layer formed on the drift layer and a first conductivity type cathode layer formed on the lower side of the drift layer, and the cathode layer has an adjacent region contacting the transistor region, the adjacent region having a depth, from a lower surface of the semiconductor substrate, which becomes shallower toward the transistor region and having first conductivity type impurity concentration which decreases toward the transistor region.

公开(公告)号：US10720395B2

公开(公告)日：2020-07-21

申请号：US15837387

申请日：2017-12-11

申请人： MITSUBISHI ELECTRIC CORPORATION

发明人： Tetsuo Takahashi ,  Masayoshi Tarutani ,  Kazuhiko Sakutani ,  Kenji Harada ,  Masao Takata ,  Kouichi In

IPC分类号： H01L23/00 ,  H01L29/06 ,  H01L23/29 ,  H01L23/31 ,  H01L21/02 ,  H01L21/78 ,  H01L23/544 ,  H01L21/304

摘要： There is provided a semiconductor device having a structure that can suppress occurrence of chipping in a device region and that can reduce manufacturing cost of the semiconductor device. A semiconductor device includes a substrate and a first amorphous insulating film. The substrate has a main surface and an end surface. The main surface includes a peripheral region and a device region. The first amorphous insulating film is disposed on the peripheral region, and is separated from the device region. The first amorphous insulating film extends along the end surface in the form of a stripe. The first amorphous insulating film is flush with the end surface.

公开(公告)号：US10249618B2

公开(公告)日：2019-04-02

申请号：US15914245

申请日：2018-03-07

申请人： Mitsubishi Electric Corporation

发明人： Tetsuo Takahashi

IPC分类号： H01L29/66 ,  H01L29/73 ,  H01L29/06 ,  H01L29/10 ,  H01L29/86 ,  H01L27/06 ,  H01L27/02 ,  H01L27/07 ,  H01L29/739 ,  H01L29/861 ,  H01L29/08

摘要： Switching loss is reduced. A first surface of a semiconductor substrate has a portion included in an IGBT region and a portion included in a diode region. Trenches formed in the first surface include a gate trench and a boundary trench disposed between the gate trench and the diode region. A fourth layer of the semiconductor substrate is provided on the first surface and has a portion included in the diode region. The fourth layer includes a trench-covering well region that covers the deepest part of the boundary trench, a plurality of isolated well regions, and a diffusion region that connects the trench-covering well region and the isolated well regions. The diffusion region has a lower impurity concentration than that of the isolated well regions. A first electrode is in contact with the isolated well regions and away from the diffusion region.

公开(公告)号：US09972617B2

公开(公告)日：2018-05-15

申请号：US15356035

申请日：2016-11-18

申请人： Mitsubishi Electric Corporation

发明人： Tetsuo Takahashi

IPC分类号： H01L27/06 ,  H01L27/02 ,  H01L29/06 ,  H01L29/10 ,  H01L29/66 ,  H01L29/73 ,  H01L29/86 ,  H01L29/739 ,  H01L29/861 ,  H01L27/07

CPC分类号： H01L27/0664 ,  H01L27/0207 ,  H01L27/0635 ,  H01L27/0727 ,  H01L29/0688 ,  H01L29/0696 ,  H01L29/0834 ,  H01L29/1083 ,  H01L29/1095 ,  H01L29/66136 ,  H01L29/7397 ,  H01L29/861

摘要： Switching loss is reduced. A first surface of a semiconductor substrate has a portion included in an IGBT region and a portion included in a diode region. Trenches formed in the first surface include a gate trench and a boundary trench disposed between the gate trench and the diode region. A fourth layer of the semiconductor substrate is provided on the first surface and has a portion included in the diode region. The fourth layer includes a trench-covering well region that covers the deepest part of the boundary trench, a plurality of isolated well regions, and a diffusion region that connects the trench-covering well region and the isolated well regions. The diffusion region has a lower impurity concentration than that of the isolated well regions. A first electrode is in contact with the isolated well regions and away from the diffusion region.

公开(公告)号：US09773873B1

公开(公告)日：2017-09-26

申请号：US15353826

申请日：2016-11-17

申请人： Mitsubishi Electric Corporation

发明人： Tetsuo Takahashi

IPC分类号： H01L21/02 ,  H01L29/10 ,  H01L29/16 ,  H01L29/20 ,  H01L29/739 ,  H01L21/04 ,  H01L21/265 ,  H01L21/324

CPC分类号： H01L29/1083 ,  H01L21/0415 ,  H01L21/046 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/26546 ,  H01L21/3245 ,  H01L29/1095 ,  H01L29/1602 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/36 ,  H01L29/66348 ,  H01L29/7397 ,  H01L29/861

摘要： A semiconductor device includes a substrate having an upper surface layer of a second conduction type formed at an upper surface side, a drift layer of a first conduction type formed under the upper surface layer, a buffer layer of the first conduction type formed under the drift layer, and a lower surface layer of the second conduction type formed under the buffer layer, the buffer layer includes a plurality of upper buffer layers provided apart from each other, and a plurality of lower buffer layers provided apart from each other between the plurality of upper buffer layers and the lower surface layer, wherein the plurality of upper buffer layers are formed so that average impurity concentrations in first sections each extending from the upper end of one of the upper buffer layers to the next lower buffer layer are unified as a first concentration.

公开(公告)号：US09437721B2

公开(公告)日：2016-09-06

申请号：US14964772

申请日：2015-12-10

申请人： Mitsubishi Electric Corporation

发明人： Tetsuo Takahashi

IPC分类号： H01L27/08 ,  H01L29/08 ,  H01L29/10 ,  H01L29/739 ,  H01L29/66 ,  H01L27/06 ,  H01L49/02 ,  H01L29/06 ,  H01L29/417

CPC分类号： H01L27/0664 ,  H01L27/0635 ,  H01L28/20 ,  H01L29/0619 ,  H01L29/063 ,  H01L29/0649 ,  H01L29/0804 ,  H01L29/0821 ,  H01L29/0834 ,  H01L29/1004 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/41708 ,  H01L29/66348 ,  H01L29/7397

摘要： In the reverse-conducting IGBT according to the present invention, an n-type buffer layer surrounds a p-type collector layer. A p-type separation layer surrounds an n-type cathode layer. The n-type buffer layer separates the p-type collector layer and the p-type separation layer from each other. The p-type separation layer separates the n-type cathode layer and the n-type buffer layer from each other. Therefore, the present invention makes it possible to reduce snapback.

摘要翻译： 在根据本发明的反向导通IGBT中，n型缓冲层围绕p型集电极层。 p型分离层包围n型阴极层。 n型缓冲层将p型集电极层和p型分离层彼此分离。 p型分离层将n型阴极层和n型缓冲层彼此分离。 因此，本发明使得可以减少快速恢复。

公开(公告)号：US09219113B2

公开(公告)日：2015-12-22

申请号：US14242040

申请日：2014-04-01

申请人： Mitsubishi Electric Corporation

发明人： Takuya Takahashi ,  Atsushi Narazaki ,  Tetsuo Takahashi

IPC分类号： H01L29/06 ,  H01L29/66 ,  H01L29/10 ,  H01L29/739

CPC分类号： H01L29/0615 ,  H01L21/0465 ,  H01L29/0619 ,  H01L29/0638 ,  H01L29/0692 ,  H01L29/1095 ,  H01L29/66128 ,  H01L29/66348 ,  H01L29/7397 ,  H01L29/8611

摘要： A semiconductor device includes a substrate of a first conductivity type, a first impurity region of a second conductivity type formed on a top surface side of the substrate, a second impurity region of the second conductivity type formed on the top surface side of the substrate and in contact with the first impurity region, the second impurity region laterally surrounding the first impurity region and having a greater depth than the first impurity region, as viewed in cross-section, and a breakdown voltage enhancing structure of the second conductivity type formed to laterally surround the second impurity region. A boundary between the first and second impurity regions has a maximum impurity concentration equal to or less than that of the second impurity region, and a current is applied between a top surface and a bottom surface of the substrate.

摘要翻译： 半导体器件包括：第一导电类型的衬底;形成在衬底的顶表面侧的第二导电类型的第一杂质区;形成在衬底的顶表面侧的第二导电类型的第二杂质区;以及 与第一杂质区域接触，第二杂质区域横向围绕第一杂质区域并且具有比第一杂质区域更大的深度，如横截面所示，并且第二导电类型的击穿电压增强结构形成为横向 围绕第二杂质区域。 第一和第二杂质区域之间的边界具有等于或小于第二杂质区域的最大杂质浓度，并且在衬底的顶表面和底表面之间施加电流。

公开(公告)号：US11830872B2

公开(公告)日：2023-11-28

申请号：US17227612

申请日：2021-04-12

申请人： Mitsubishi Electric Corporation

发明人： Kazuki Kudo ,  Hidenori Fujii ,  Tetsuo Takahashi

IPC分类号： H01L27/06 ,  H01L29/06 ,  H01L29/10 ,  H01L29/66 ,  H01L29/861 ,  H01L29/739 ,  H01L29/78

CPC分类号： H01L27/0664 ,  H01L29/0623 ,  H01L29/1095 ,  H01L29/66348 ,  H01L29/7397 ,  H01L29/7805 ,  H01L29/8613

摘要： A semiconductor device according to the present disclosure is an RC-IGBT in which an IGBT region 10 and a diode region 20 are provided adjacent to each other. The diode region 20 includes a p-type anode layer 25 provided on a first principal surface side of an n−-type drift layer 1, a p-type contact layer 24 provided on the first principal surface side of the p-type anode layer 25 and at a surface layer of a semiconductor substrate on the first principal surface side and connected with an emitter electrode 6, and an n+-type cathode layer 26 provided at a surface layer of the semiconductor substrate on a second principal surface side. The p-type contact layer 24 contains aluminum as p-type impurities, and the thickness of the p-type contact layer 24 is smaller than the thickness of an n+-type source layer 13 provided in the IGBT region 10.

公开(公告)号：US09478647B2

公开(公告)日：2016-10-25

申请号：US14848314

申请日：2015-09-08

申请人： Mitsubishi Electric Corporation

发明人： Tetsuo Takahashi

IPC分类号： H01L29/73 ,  H01L29/739 ,  H01L27/06

CPC分类号： H01L29/7397 ,  H01L27/0623 ,  H01L27/0727 ,  H01L29/0696 ,  H01L29/0834 ,  H01L29/407 ,  H01L29/7391

摘要： A semiconductor device is configured such that the distance between the trench gate in the IGBT and the trench gate in the diode is reduced or a p-well layer is provided between the trench gate in the IGBT and the trench gate in the diode.

摘要翻译： 半导体器件被配置为使得IGBT中的沟槽栅极和二极管中的沟槽栅极之间的距离减小，或者在IGBT中的沟槽栅极和二极管中的沟槽栅极之间设置p阱层。

公开(公告)号：US11869962B2

公开(公告)日：2024-01-09

申请号：US17661843

申请日：2022-05-03

申请人： Mitsubishi Electric Corporation

发明人： Ryu Kamibaba ,  Tetsuo Takahashi ,  Akihiko Furukawa

IPC分类号： H01L29/739 ,  H01L29/78 ,  H01L29/08 ,  H01L27/06 ,  H01L21/04

CPC分类号： H01L29/7397 ,  H01L21/0465 ,  H01L27/0629 ,  H01L29/083 ,  H01L29/7813

摘要： Examples of a semiconductor device includes a transistor region formed in a semiconductor substrate having a first conductivity type drift layer, and a diode region formed to be adjacent to the transistor region in the semiconductor substrate, wherein the diode region has a second conductivity type anode layer formed on the drift layer and a first conductivity type cathode layer formed on the lower side of the drift layer, and the cathode layer has an adjacent region contacting the transistor region, the adjacent region having a depth, from a lower surface of the semiconductor substrate, which becomes shallower toward the transistor region and having first conductivity type impurity concentration which decreases toward the transistor region.