- 专利标题： Semiconductor device
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申请号： US17318894申请日： 2021-05-12
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公开(公告)号： US11495678B2公开(公告)日： 2022-11-08
- 发明人: Kenji Harada , Kakeru Otsuka , Hirofumi Oki
- 申请人： Mitsubishi Electric Corporation
- 申请人地址： JP Tokyo
- 专利权人： Mitsubishi Electric Corporation
- 当前专利权人： Mitsubishi Electric Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Studebaker & Brackett PC
- 优先权： JPJP2020-128634 20200729
- 主分类号： H01L29/739
- IPC分类号： H01L29/739 ; H01L29/10 ; H01L29/861
摘要：
A semiconductor device includes a semiconductor substrate, a transistor region, a diode region, a boundary trench gate, and a carrier control region. The boundary trench gate is provided in a boundary portion between the transistor region and the diode region. The carrier control region is provided as a surface layer of the semiconductor substrate at a position closer to the boundary trench gate than the source layer located between the boundary trench gate and the trench gate. A concentration of first conductivity type impurities contained in the carrier control region is higher than a concentration of the first conductivity type impurities contained in the source layer or a concentration of second conductivity type impurities contained in the carrier control region is lower than a concentration of the second conductivity type impurities contained in the source layer.
公开/授权文献
- US20220037514A1 SEMICONDUCTOR DEVICE 公开/授权日：2022-02-03
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