公开(公告)号：US12237379B2

公开(公告)日：2025-02-25

申请号：US17584043

申请日：2022-01-25

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Ryo Tanaka ,  Yuki Ohuchi ,  Katsunori Ueno ,  Shinya Takashima

IPC: H01L29/20 ,  H01L21/02 ,  H01L21/265 ,  H01L29/66

Abstract: A method for manufacturing a nitride semiconductor device including: forming an N-type region in a nitride semiconductor layer; implanting ions of an acceptor element into a region under the N-type region in the nitride semiconductor layer; and forming a first P-type region under the N-type region by subjecting the nitride semiconductor layer to heat treatment and activating the acceptor element. The forming the N-type region includes implanting ions of a donor element into the nitride semiconductor layer such that concentration of the donor element in the N-type region is equal to or greater than concentration of the acceptor element in the first P-type region. The implanting ions of the acceptor element into a region under the N-type region includes implanting ions of the acceptor element such that concentration of the acceptor element in the first P-type region is 1×1019 cm−3 or more and 1×1021 cm−3 or less.

公开(公告)号：US20250055210A1

公开(公告)日：2025-02-13

申请号：US18932400

申请日：2024-10-30

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Makoto ISOZAKI

IPC: H01R12/58 ,  H01L23/498 ,  H01L25/07

Abstract: A press-fit terminal to be connected to a substrate having a through hole includes a press-fit portion configured to be press-fitted and held inside the through hole; and a fitting portion configured to fit to an outer surface of the substrate outside the through hole and restrict movement of the press-fit terminal in a direction in which the press-fit terminal comes off from the through hole.

公开(公告)号：US12224320B2

公开(公告)日：2025-02-11

申请号：US17587802

申请日：2022-01-28

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Yoshihito Ichikawa

IPC: H01L29/16 ,  H01L29/66 ,  H01L29/78

Abstract: At any timing after formation of gate electrodes, particle beam irradiation is performed to a semiconductor wafer having an n−-type drift region constituted by an n−-type epitaxial layer and having an n-type impurity concentration that is higher than a target majority carrier concentration (design value) of the n−-type drift region. Point defects of a defect density corresponding to an irradiation dose of the particle beam are generated in the n−-type drift region by the particle beam irradiation, whereby an effective majority carrier concentration of the n−-type drift region is adjusted and reduced with respect to the n-type impurity concentration of the n−-type drift region, to approach the design value. After formation of the n−-type epitaxial layer, the n-type impurity concentration of the n−-type drift region may be measured, or the n−-type epitaxial layer may be formed to have an n-type impurity concentration higher than the design value.

公开(公告)号：US20250046676A1

公开(公告)日：2025-02-06

申请号：US18756248

申请日：2024-06-27

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Daiki SANO

IPC: H01L23/473 ,  H01L23/00 ,  H01L23/31 ,  H01L23/36 ,  H01L23/538 ,  H01L25/065

Abstract: A semiconductor device, including: a semiconductor chip formed on a heat dissipation plate; a pool part including a bottom surface, two long lateral faces, and two short lateral faces defining a pool space; a guide part installed in the pool space and having first and second ends both connected to one of the short lateral face, at positions opposite to each other across an inlet formed on the one short lateral face, so as to separate a guide space from the pool space; and a guide plate disposed in the pool space on the guide part. In the plan view, the guide plate has a slit formed within an area thereof overlapping the guide space. The heat dissipation plate is disposed on the pool part. A geometrical area of a cross-section of the guide space becomes smaller as the cross-section is farther away from the inlet of the pool part.

公开(公告)号：US20250044822A1

公开(公告)日：2025-02-06

申请号：US18676236

申请日：2024-05-28

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Motomitsu IWAMOTO

IPC: G05F3/30 ,  G01L9/02

Abstract: A reference voltage circuit includes: a first resistor and a first pn junction device connected in series, and a second resistor, a third resistor, and a second pn junction device connected in series, both between a predetermined line and a ground; a first capacitor and a second capacitor; a voltage output circuit configured to amplify a first voltage at a first node between the first resistor and the first pn junction device, and amplify a second voltage at a second node between the second resistor and the third resistor, for a first time period and a second time period to thereby output a resultant voltage to the first capacitor and the second capacitor, respectively; and an amplifier circuit configured to amplify a difference between voltages at the first and second capacitors. A reference voltage corresponding to a voltage from the first amplifier circuit is applied to the predetermined line.

公开(公告)号：US20250042447A1

公开(公告)日：2025-02-06

申请号：US18779645

申请日：2024-07-22

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Hidenori MATSUSHIMA ,  Jun KANDA ,  Kenji FUJITA ,  Yoshio MORI

IPC: B61D19/02

Abstract: A controller is configured to perform a process including operating or releasing an electrically driven hermetic retention device configured to retain airtightness between a door and an opening of a railway vehicle, according to whether or not there is a possibility of an opening operation of the door within a predetermined period.

公开(公告)号：US12218656B2

公开(公告)日：2025-02-04

申请号：US18172254

申请日：2023-02-21

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Masashi Akahane

IPC: H03K17/14 ,  H03F3/45 ,  H03K17/08 ,  H03K17/081 ,  H03K17/567

Abstract: Provided is a driving apparatus including a temperature detection circuit configured to output a temperature detection signal corresponding to a temperature of a switching device, a current detection circuit configured to sample, at a timing during an ON period of the switching device, a current detection signal corresponding to a current that flows in the switching device, and a driving circuit configured to adjust, according to the temperature detection signal and the current detection signal, a driving current to be supplied to a control terminal of the switching device. When the current detection signals are the same, the driving circuit may decrease the driving current according to the temperature detection signal indicating a lower temperature of the switching device. When the temperature detection signals are the same, the driving circuit may decrease the driving current according to the current detection signal indicating a smaller current regarding the main current.

公开(公告)号：US12218228B2

公开(公告)日：2025-02-04

申请号：US17409809

申请日：2021-08-24

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Koh Yoshikawa ,  Masayuki Momose ,  Toshiyuki Matsui

IPC: H01L29/66 ,  H01L29/06 ,  H01L29/423 ,  H01L29/739 ,  H01L29/78

Abstract: Provided is a semiconductor device, including: a semiconductor substrate including a bulk donor; an active portion provided on the semiconductor substrate; and an edge termination structure portion provided between the active portion and an end side of the semiconductor substrate on a upper surface of the semiconductor substrate; wherein the active portion includes hydrogen, and has a first high concentration region with a higher donor concentration than a bulk donor concentration; and the edge termination structure portion, which is provided in a range that is wider than the first high concentration region in a depth direction of the semiconductor substrate, includes hydrogen, and has a second high concentration region with a higher donor concentration than the bulk donor concentration.

公开(公告)号：US20250038146A1

公开(公告)日：2025-01-30

申请号：US18677690

申请日：2024-05-29

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Yushi SATO

IPC: H01L23/00 ,  H01L23/373 ,  H01L23/473 ,  H01L25/07

Abstract: A semiconductor device includes: a semiconductor chip including upper and lower surfaces and transistor regions and diode regions being arranged alternately with one another along the upper and lower surfaces; a lead frame containing copper disposed on the upper surface of the semiconductor chip; a plating layer containing nickel disposed on a semiconductor chip-side surface of the lead frame; a solder layer that contains tin and bonds the upper surface of the semiconductor chip to the plating layer; an insulated circuit board that is disposed on the lower surface of the semiconductor chip and has a wiring layer containing copper disposed on a semiconductor chip-side surface thereof; a plating layer containing nickel that is disposed on a semiconductor chip-side surface of the wiring layer; and a solder layer containing tin that bonds the lower surface of the semiconductor chip to the plating layer.

公开(公告)号：US12212224B2

公开(公告)日：2025-01-28

申请号：US17452071

申请日：2021-10-25

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Ryoga Kiguchi ,  Hiromu Takubo

IPC: H02M1/08 ,  H03K17/0412 ,  H03K17/56

Abstract: Provided is a driving apparatus that drives a switching device, the driving apparatus including a reference potential line, a first switching control unit configured to switch whether to connect a control terminal of the switching device to the reference potential line, a first resistor element arranged in series to the first switching control unit in a path from the control terminal of the switching device to the reference potential line, a first capacitor provided in parallel with the first resistor element in the path from the control terminal of the switching device to the reference potential line, and a discharge control unit configured to control whether to discharge the first capacitor.