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公开(公告)号：US20240339517A1
公开(公告)日：2024-10-10
申请号：US18749503
申请日：2024-06-20
IPC分类号： H01L29/45 , H01L21/285 , H01L27/06 , H01L29/32 , H01L29/417 , H01L29/739 , H01L29/861
CPC分类号： H01L29/45 , H01L21/28518 , H01L27/0664 , H01L29/32 , H01L29/41708 , H01L29/7397 , H01L29/8613
摘要： Provided is a semiconductor device comprising: a semiconductor substrate; an interlayer dielectric film that has a contact hole and is provided above the semiconductor substrate; a first alloy layer provided on an upper surface of the semiconductor substrate below the contact hole; an oxide layer provided on an upper surface of the first alloy layer in the contact hole; a barrier metal layer that is conductive and provided above the oxide layer in the contact hole; and a plug layer provided above the barrier metal layer in the contact hole.
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公开(公告)号：US20230261094A1
公开(公告)日：2023-08-17
申请号：US18089236
申请日：2022-12-27
发明人： Motoyoshi KUBOUCHI
IPC分类号： H01L29/739 , H01L29/66 , H01L29/861 , H01L29/423
CPC分类号： H01L29/7397 , H01L29/66325 , H01L29/861 , H01L29/4236
摘要： A semiconductor device includes: a semiconductor substrate; a plurality of trenches provided on a top surface side of the semiconductor substrate; am insulated gate electrode structure buried inside the respective trenches; an interlayer insulating film deposited on top surfaces of the semiconductor substrate and the insulated gate electrode structure; and a silicide layer deposited at a bottom of a contact hole penetrating the interlayer insulating film so as to be in contact with the top surface of the semiconductor substrate interposed between the trenches adjacent to each other, wherein at least a part of a bottom surface of the silicide layer is located at a higher position than a bottom surface of the interlayer insulating film.
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公开(公告)号：US20220351973A1
公开(公告)日：2022-11-03
申请号：US17862243
申请日：2022-07-11
IPC分类号： H01L21/22 , H01L27/06 , H01L29/06 , H01L29/10 , H01L29/32 , H01L21/8222 , H01L29/861 , H01L21/265 , H01L21/268 , H01L29/66 , H01L29/739
摘要： A semiconductor device has transistor portions and diode portions. The transistor portions have a semiconductor substrate of a first conductivity type, a first semiconductor region of a second conductivity type, second semiconductor regions of the first conductivity type, gate insulating films, gate electrodes, a first semiconductor layer of the first conductivity type, a third semiconductor region of the second conductivity type, a first electrode, and a second electrode. The diode portions have the semiconductor substrate, the first semiconductor region, the first semiconductor layer, a fourth semiconductor region of the first conductivity type, the first electrode, and the second electrode. The first semiconductor layer has a predetermined region, a depth of the predetermined region from a second main surface of the semiconductor substrate is greater than a depth of a region of the first semiconductor layer excluding the predetermined region, from the second main surface of the semiconductor substrate.
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公开(公告)号：US20220140091A1
公开(公告)日：2022-05-05
申请号：US17577361
申请日：2022-01-17
发明人： Takashi YOSHIMURA , Yuichi ONOZAWA , Hiroshi TAKISHITA , Misaki MEGURO , Motoyoshi KUBOUCHI , Naoko KODAMA
IPC分类号： H01L29/36 , H01L21/22 , H01L21/265 , H01L21/322 , H01L29/06 , H01L29/12 , H01L29/739 , H01L29/78 , H01L29/861
摘要： Provided is a semiconductor device including a semiconductor substrate; a hydrogen donor that is provide inside the semiconductor substrate in a depth direction, has a doping concentration that is higher than a doping concentration of a dopant of the semiconductor substrate, has a doping concentration distribution peak at a first position that is a predetermined distance in the depth direction of the semiconductor substrate away from one main surface of the semiconductor substrate, and has a tail of the doping concentration distribution where the doping concentration is lower than at the peak, farther on the one main surface side than where the first position is located; and a crystalline defect region having a crystalline defect density center peak at a position shallower than the first position, in the depth direction of the semiconductor substrate.
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公开(公告)号：US20210265230A1
公开(公告)日：2021-08-26
申请号：US17317785
申请日：2021-05-11
发明人： Motoyoshi KUBOUCHI , Soichi YOSHIDA
IPC分类号： H01L23/34 , H01L27/06 , H01L29/06 , H01L21/22 , H01L29/32 , H01L29/40 , H01L29/739 , H01L29/10
摘要： In a semiconductor device, it is preferable to suppress a variation in characteristics of a temperature sensor. The semiconductor device is provided that includes a semiconductor substrate having a first conductivity type drift region, a transistor section provided in the semiconductor substrate, a diode section provided in the semiconductor substrate, a second conductivity type well region exposed at an upper surface of the semiconductor substrate, a temperature sensing unit that is adjacent to the diode section in top view and is provided above the well region, and an upper lifetime control region that is provided in the diode section, at the upper surface side of the semiconductor substrate, and in a region not overlapping with the temperature sensing unit in top view.
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公开(公告)号：US20210134710A1
公开(公告)日：2021-05-06
申请号：US17039636
申请日：2020-09-30
发明人： Motoyoshi KUBOUCHI
IPC分类号： H01L23/498 , H01L25/18 , H01L23/31 , H01L21/48
摘要： A semiconductor device, including a semiconductor module and a conducting board. The semiconductor module includes a semiconductor chip and an external connecting terminal which has a first end electrically connected to the semiconductor chip and a second end extending from the semiconductor chip. The conducting board has a terminal hole penetrating therethrough, an inlet and an outlet of the terminal hole being respectively on two opposite surfaces of the conducting board. The conducting board is electrically connected to the external connecting terminal, of which the second end fits into the terminal hole from the inlet toward the outlet, and is fixed therein by solder. At least one of the terminal hole and the second end of the external connecting terminal has a lock part. The second end of the external connecting terminal, inserted into the terminal hole, is locked by the lock part and thereby remains in the terminal hole.
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公开(公告)号：US20190149035A1
公开(公告)日：2019-05-16
申请号：US16146293
申请日：2018-09-28
发明人： Motoyoshi KUBOUCHI
摘要： A step-down chopper circuit having a filter reactor includes: a capacitor series circuit having a first capacitor and a second capacitor; a first series circuit having a semiconductor switching element and a diode, which is connected in parallel with the first capacitor, and a second series circuit having a diode and a semiconductor switching element, which is connected in parallel with the second capacitor; a chopper reactor whose one end is connected to a connection point of the first series circuit; and an output capacitor connected between the other end of the chopper reactor and a connection point of the second series circuit, in which a bypass current path with respect to the capacitor, which is configured to bypass a short-circuit current, is formed when one of the first series circuit and the second series circuit becomes a short-circuit state.
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公开(公告)号：US20170244319A1
公开(公告)日：2017-08-24
申请号：US15403551
申请日：2017-01-11
发明人： Ryohei MAKINO , Motoyoshi KUBOUCHI
CPC分类号： H02M3/135 , H02H7/1225 , H02M1/32 , H02M7/483 , H02P27/06 , H02P29/0241
摘要： A chopper device includes: a series circuit connecting at one end to a positive pole of a DC power source and having a breaker and a reactor; a series circuit connected between another end of the stated series circuit and a negative pole of the DC power source and having switches; a series circuit connected in parallel to the switch and having a diode and a capacitor; and a series circuit connected in parallel to the switch and having a diode and a capacitor. The chopper device outputs a DC voltage at three potentials from both ends and a midpoint of a series circuit having the capacitors by turning the switches ON/OFF. The chopper device further includes other switches connected in parallel to the switches. When a short-circuit fault is presumed to have occurred in the switch, the other switch is turned ON before interruption is performed by the breaker.
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公开(公告)号：US20240154003A1
公开(公告)日：2024-05-09
申请号：US18492787
申请日：2023-10-24
发明人： Yosuke SAKURAI , Tatsuya NAITO , Seiji NOGUCHI , Motoyoshi KUBOUCHI , Naoko KODAMA , Hiroshi TAKISHITA
IPC分类号： H01L29/32 , H01L27/06 , H01L29/739 , H01L29/861
CPC分类号： H01L29/32 , H01L27/0664 , H01L29/7397 , H01L29/8613
摘要： Provided is a semiconductor device in which a boundary region between a transistor portion and a diode portion includes: a first portion which is in contact with the transistor portion and is not provided with a lifetime adjustment region; and a second portion which is in contact with the diode portion and to which the lifetime adjustment region of the diode portion extends, a density distribution of a lifetime killer in a first direction has a lateral slope where a density of the lifetime killer decreases from the second portion of the boundary region toward the first portion, a width of the first portion is smaller than a width of the second portion in the first direction, and the width of the first portion is equal to or larger than a width of the lateral slope in the first direction.
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公开(公告)号：US20240079286A1
公开(公告)日：2024-03-07
申请号：US18507123
申请日：2023-11-13
发明人： Motoyoshi KUBOUCHI , Soichi YOSHIDA
IPC分类号： H01L23/34 , H01L21/22 , H01L27/06 , H01L29/06 , H01L29/10 , H01L29/32 , H01L29/40 , H01L29/739
CPC分类号： H01L23/34 , H01L21/221 , H01L27/0664 , H01L29/0623 , H01L29/1095 , H01L29/32 , H01L29/402 , H01L29/7397
摘要： In a semiconductor device, it is preferable to suppress a variation in characteristics of a temperature sensor. The semiconductor device is provided that includes a semiconductor substrate having a first conductivity type drift region, a transistor section provided in the semiconductor substrate, a diode section provided in the semiconductor substrate, a second conductivity type well region exposed at an upper surface of the semiconductor substrate, a temperature sensing unit that is adjacent to the diode section in top view and is provided above the well region, and an upper lifetime control region that is provided in the diode section, at the upper surface side of the semiconductor substrate, and in a region not overlapping with the temperature sensing unit in top view.
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