公开(公告)号：US20240339527A1

公开(公告)日：2024-10-10

申请号：US18296521

申请日：2023-04-06

申请人： GlobalFoundries U.S. Inc.

发明人： Judson R. HOLT ,  John J. PEKARIK ,  Anindya NATH ,  Souvick MITRA

IPC分类号： H01L29/737 ,  H01L21/322

CPC分类号： H01L29/7371 ,  H01L21/322 ,  H01L29/747 ,  H01L29/78

摘要： The present disclosure relates to semiconductor structures and, more particularly, to low capacitance, low resistance devices and methods of manufacture. The structure includes: a semiconductor substrate; a device having an active region; and a porous semiconductor material within the semiconductor substrate and surrounding the active region of the device.

公开(公告)号：US12100727B2

公开(公告)日：2024-09-24

申请号：US17418148

申请日：2019-12-23

申请人： Soitec

发明人： Walter Schwarzenbach ,  Ludovic Ecarnot ,  Damien Massy ,  Nadia Ben Mohamed ,  Nicolas Daval ,  Christophe Girard ,  Christophe Maleville

IPC分类号： H01L27/146 ,  H01L21/265 ,  H01L21/322 ,  H01L21/762 ,  H01L31/18

CPC分类号： H01L27/14683 ,  H01L21/26506 ,  H01L21/3223 ,  H01L21/3226 ,  H01L21/76254 ,  H01L27/1463 ,  H01L31/1892

摘要： A method of manufacturing a substrate for a front-facing image sensor, comprises:—providing a donor substrate comprising a semiconductor layer to be transferred,—providing a semiconductor carrier substrate,—bonding the donor substrate to the carrier substrate, an electrically insulating layer being at the bonding interface,—transferring the semiconductor layer to the carrier substrate,—implanting gaseous ions in the carrier substrate via the transferred semiconductor layer and the electrically insulating layer, and—after the implantation, epitaxially growing an additional semiconductor layer on the transferred semiconductor layer.

公开(公告)号：US20240304457A1

公开(公告)日：2024-09-12

申请号：US18586856

申请日：2024-02-26

申请人： DISCO CORPORATION

发明人： Hayato TANAKA ,  Akira MIZUTANI

IPC分类号： H01L21/322 ,  B23K26/53 ,  H01L21/304

CPC分类号： H01L21/3221 ,  B23K26/53 ,  H01L21/304

摘要： A method of processing a bonded wafer includes applying a laser beam having a wavelength transmittable through a first wafer to a first wafer from a reverse Sublaser beam within the first wafer to form a modified layer in the first wafer and cracks developed from the modified layer and extending toward an outer circumferential portion of the first wafer along the bonding layer, and grinding the reverse side of the first wafer to thin down the first wafer. A plurality of modified layers are formed in the first wafer at positions spaced parallel to the plane of the first wafer radially inwardly from the outer circumferential portion of the first wafer, developing cracks in and along the joining layer toward the outer circumferential portion to form a removal initiating point for removing a chamfered edge.

公开(公告)号：US20240297052A1

公开(公告)日：2024-09-05

申请号：US18582983

申请日：2024-02-21

申请人： DISCO CORPORATION

发明人： Hayato TANAKA ,  Hayato IGA

IPC分类号： H01L21/322 ,  B23K26/53 ,  H01L21/304

CPC分类号： H01L21/3221 ,  B23K26/53 ,  H01L21/304

摘要： A method of processing a bonded wafer includes a modified layer forming step of applying a laser beam to a first wafer from a reverse side thereof while positioning a focused spot of the laser beam within the first wafer to form a modified layer in the first wafer and cracks developed from the modified layer and extending toward an outer circumferential portion of the first wafer along the bonding layer, and a grinding step of grinding the reverse side of the first wafer to thin down the first wafer. In the modified layer forming step, the focused spot of the laser beam includes multi-focused spots, and a line interconnecting the multi-focused spots forms a depression angle ranging from 15 to 50 degrees toward the outer circumferential portion of the first wafer with respect to a line parallel to a plane of the first wafer.

公开(公告)号：US20240282801A1

公开(公告)日：2024-08-22

申请号：US18609418

申请日：2024-03-19

申请人： SUMCO Corporation

发明人： Takeshi Kadono ,  Kazunari Kurita

IPC分类号： H01L27/146 ,  C23C14/48 ,  C30B25/18 ,  C30B29/06 ,  H01L21/02 ,  H01L21/265 ,  H01L21/322 ,  H01L21/324 ,  H01L29/167

CPC分类号： H01L27/14687 ,  C23C14/48 ,  C30B25/186 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02439 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02658 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/26566 ,  H01L21/2658 ,  H01L21/3221 ,  H01L21/324 ,  H01L27/14689 ,  H01L29/167

摘要： The present invention provides a method of producing a semiconductor epitaxial wafer, which can suppress metal contamination by achieving higher gettering capability.
The method of producing a semiconductor epitaxial wafer includes a first step of irradiating a surface portion 10A of a semiconductor wafer 10 with cluster ions 16 thereby forming a modifying layer 18 formed from carbon and a dopant element contained as a solid solution that are constituent elements of the cluster ions 16, in the surface portion 10A of the semiconductor wafer; and a second step of forming an epitaxial layer 20 on the modifying layer 18 of the semiconductor wafer, the epitaxial layer 20 having a dopant element concentration lower than the peak concentration of the dopant element in the modifying layer 18.

公开(公告)号：US20240266187A1

公开(公告)日：2024-08-08

申请号：US18640125

申请日：2024-04-19

申请人： Tianjin University

发明人： Liqiang LI ,  Liqian YUAN ,  Yinan HUANG ,  Jinbo HE ,  Wenping HU

IPC分类号： H01L21/322

CPC分类号： H01L21/3221

摘要： A method for enhancing the stability of an N-type semiconductor through oxygen elimination includes constructing an antioxidant layer on the surface of a semiconductor material, or blending the antioxidant with the N-type semiconductor material. The antioxidant removes the existing oxygen and related species in the N-type semiconductor, eliminates the related trap state, and prevents the N-type semiconductor from further degrading, so that the electrical properties such as mobility of the N-type semiconductor device are improved, and the operation stability and long-term storage stability are improved. In addition, the antioxidant also inhibits the photobleaching of N-type semiconductors and significantly improves the photochemical stability of N-type semiconductors.

公开(公告)号：US20240120245A1

公开(公告)日：2024-04-11

申请号：US18545136

申请日：2023-12-19

申请人： ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.

发明人： Rajesh Katkar ,  Liang Wang

IPC分类号： H01L23/26 ,  B81B7/00 ,  B81C3/00 ,  H01L21/322 ,  H01L23/00 ,  H01L23/04 ,  H01L23/10

CPC分类号： H01L23/26 ,  B81B7/0038 ,  B81C3/001 ,  H01L21/3221 ,  H01L23/04 ,  H01L23/10 ,  H01L24/03 ,  H01L24/09

摘要： A bonded structure is disclosed. The bonded structure can include a first element that has a first bonding surface. The bonded structure can further include a second element that has a second bonding surface. The first and second bonding surfaces are bonded to one another along a bonding interface. The bonded structure can also include an integrated device that is coupled to or formed with the first element or the second element. The bonded structure can further include a channel that is disposed along the bonding interface around the integrated device to define an effectively closed profile The bonded structure can also include a getter material that is disposed in the channel. The getter material is configured to reduce the diffusion of gas into an interior region of the bonded structure.

公开(公告)号：US20240063027A1

公开(公告)日：2024-02-22

申请号：US18269646

申请日：2021-12-06

申请人： SHIN-ETSU HANDOTAI CO., LTD.

发明人： Katsuyoshi SUZUKI

IPC分类号： H01L21/322 ,  H01L21/02

CPC分类号： H01L21/3221 ,  H01L21/02661 ,  H01L21/02488 ,  H01L21/02532

摘要： The present invention is a method for producing an epitaxial wafer forming a single crystal silicon layer on a single crystal silicon wafer, comprising, a step of removing native oxide film on surface of the single crystal silicon wafer with hydrofluoric acid, a step of forming an oxygen atomic layer on the surface of the single crystal silicon wafer from which the native oxide film has been removed, a step of epitaxially growing the single crystal silicon layer on the surface of the single crystal silicon wafer on which the oxygen atomic layer is formed, wherein the plane concentration of oxygen in the oxygen atomic layer is 1×1015 atoms/cm2 or less. As a result, a method for producing an epitaxial wafer, that an oxygen atomic layer can be stably and simply introduced into an epitaxial layer, and having a good-quality single crystal silicon epitaxial layer is provided.

公开(公告)号：US20240030033A1

公开(公告)日：2024-01-25

申请号：US18257217

申请日：2021-11-29

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ,  SOITEC

发明人： Gweltaz Gaudin ,  Ionut Radu ,  Franck Fournel ,  Julie Widiez ,  Didier Landru

IPC分类号： H01L21/18 ,  H01L21/762 ,  H01L21/02 ,  H01L21/322

CPC分类号： H01L21/187 ,  H01L21/76254 ,  H01L21/02002 ,  H01L21/3221

摘要： A method for producing a semiconductor structure comprises: a) providing a working layer of a semiconductor material; b) providing a carrier substrate of a semiconductor material; c) depositing a thin film of a semiconductor material different from that or those of the working layer and the carrier substrate on a free face to be joined of the working layer and/or the carrier substrate; d) directly joining the free faces of the working layer and the carrier substrate, e) annealing the joined structure at an elevated temperature to bring about segmentation of the encapsulated thin film and form a semiconductor structure comprising an interface region between the working layer and the carrier substrate, the interface region comprising: —regions of direct contact between the working layer and the carrier substrate; and —agglomerates comprising the semiconductor material of the thin film adjacent the regions of direct contact.

公开(公告)号：US20230395376A1

公开(公告)日：2023-12-07

申请号：US18324752

申请日：2023-05-26

申请人： IMEC vzw

发明人： Bertrand Parvais ,  Sachin Yadav ,  Ming Zhao ,  Pieter Cardinael

IPC分类号： H01L21/02 ,  H01L21/322 ,  H01L29/20

CPC分类号： H01L21/0254 ,  H01L21/02181 ,  H01L21/3223 ,  H01L29/2003 ,  H01L21/02381 ,  H01L21/02164 ,  H01L21/0245 ,  H01L21/02532

摘要： In one aspect, a substrate includes a base substrate, a dielectric layer directly on the base substrate, a trap-rich layer directly on the dielectric layer, and a crystalline semiconductor layer directly on the trap-rich layer. The dielectric layer may be a stack of multiple dielectric sublayers formed of the same dielectric material or formed of two or more different dielectric materials. The substrate can be suitable to epitaxially grow on the surface of the crystalline semiconductor layer one or more layers of a compound semiconductor. One application is the growth of a stack of layers of III-V material with one or more upper layers of the stack being suitable to process in and/or on the layers a number of semiconductor devices such as transistors or diodes. The position of the trap-rich layer, between the dielectric layer and the crystalline semiconductor layer, can enable the neutralization of a parasitic surface conductive (PSC) layer at the interface between the crystalline layer and the compound layer or layers, and of an additional PSC layer caused by a direct contact between the crystalline layer and the dielectric layer. The disclosed technology is equally related to methods of producing the substrate of the disclosed technology.