公开(公告)号：US20240363354A1

公开(公告)日：2024-10-31

申请号：US18636449

申请日：2024-04-16

申请人： Applied Materials, Inc.

发明人： He REN ,  Raman GAIRE ,  Shi YOU ,  Pranav RAMESH ,  Houssam LAZKANI ,  Shawn THOMAS ,  Abhishek DUBE ,  Mehul B. NAIK ,  Songkram Sonny SRIVATHANAKUL

IPC分类号： H01L21/285 ,  C30B25/18 ,  C30B29/06 ,  C30B29/68 ,  H01L21/768 ,  H01L29/40

CPC分类号： H01L21/28518 ,  C30B25/18 ,  C30B29/06 ,  C30B29/68 ,  H01L21/768 ,  H01L29/401

摘要： Semiconductor devices and methods for manufacturing the same are provided. The method includes epitaxially growing a doped crystalline silicon-containing layer over a source/drain feature and growing a doped amorphous silicon-containing layer over a field region of a semiconductor layer. The trench is formed in the semiconductor layer and the trench exposes the source/drain feature. The method further includes epitaxially growing an undoped crystalline silicon-containing capping layer over the doped crystalline silicon-containing layer and growing an undoped amorphous silicon-containing layer over the doped silicon-containing amorphous layer. The method further includes selectively removing the doped amorphous silicon-containing layer and the undoped amorphous silicon-containing layer relative to the silicon-containing crystalline capping layer. The method further includes removing the silicon-containing crystalline capping layer to expose the doped silicon-containing crystalline layer.

公开(公告)号：US12129543B2

公开(公告)日：2024-10-29

申请号：US17622458

申请日：2020-05-13

申请人： SUMCO CORPORATION

发明人： Haku Komori ,  Kazuhiro Narahara

IPC分类号： C30B25/08 ,  C23C16/24 ,  C23C16/44 ,  C30B25/10 ,  C30B29/06 ,  H01L21/02

CPC分类号： C23C16/4401 ,  C23C16/24 ,  C30B25/08 ,  C30B25/10 ,  C30B29/06 ,  H01L21/02008

摘要： Provided is an epitaxial growth apparatus which makes it possible to prevent the production of debris between a preheat ring and a lower liner without fracturing the preheat ring. The epitaxial growth apparatus includes: a chamber; an upper liner and a lower liner that are disposed on an inner wall of the chamber; a susceptor being provided inside the chamber; and a preheat ring that is disposed on a supporting portion protruding in an opening of the lower liner and is disposed on the outer circumference of the susceptor. The preheat ring is not supported by the supporting portion in at least a part of a region that is right above a region where the semiconductor wafer passes in a transfer path in which the semiconductor wafer is loaded into the chamber to be set on the susceptor.

公开(公告)号：US20240309543A1

公开(公告)日：2024-09-19

申请号：US18675609

申请日：2024-05-28

申请人： GlobalWafers Co., Ltd.

发明人： Hong-Huei Huang ,  Benjamin Michael Meyer ,  Chun-Sheng Wu ,  Wei-Chen Chou ,  Chen-Yi Lin ,  Feng-Chien Tsai

IPC分类号： C30B15/10 ,  C30B15/20 ,  C30B29/06

CPC分类号： C30B15/10 ,  C30B15/20 ,  C30B29/06 ,  Y10T117/1032

摘要： A method of producing a single crystal silicon ingot from a silicon melt includes positioning a crucible in an interior of a susceptor assembly defined by a susceptor base and a sidewall, where each of the susceptor base and the sidewall are formed of a carbon-containing material and the susceptor assembly includes a removable sacrifice ring interposed between the susceptor base and the sidewall, adding polycrystalline silicon to the crucible, heating the polycrystalline silicon to cause a silicon melt to form in the crucible, pulling a single crystal silicon ingot from the melt, where silicon carbide (SiC) deposits accumulate on the sacrifice ring during the pulling the single crystal silicon ingot from the melt, and after the pulling the single crystal silicon ingot from the melt, removing the sacrifice ring having the accumulated SiC deposits from the susceptor base.

公开(公告)号：US20240309541A1

公开(公告)日：2024-09-19

申请号：US18673020

申请日：2024-05-23

申请人： GlobalWafers Co., Ltd.

发明人： Yu-Chiao Wu ,  William Lynn Luter ,  Richard J. Phillips ,  James Dean Eoff

IPC分类号： C30B15/04 ,  C30B15/14 ,  C30B29/06

CPC分类号： C30B15/04 ,  C30B15/14 ,  C30B29/06 ,  Y10T117/1032 ,  Y10T117/1056

摘要： A method for producing a single crystal silicon ingot includes adding polycrystalline silicon to a crucible disposed within a chamber defined by a housing of an ingot puller apparatus, maintaining the chamber at a first pressure, heating the chamber using radiant heat to melt the polycrystalline silicon and form a silicon melt in the crucible, pulling a single crystal silicon ingot from the silicon melt, channeling a liquid dopant at a second pressure greater than the first pressure into a feed tube positioned in the chamber, vaporizing the liquid dopant into a vaporized dopant by flash evaporation at the first pressure within the feed tube, and directing the vaporized dopant from the feed tube toward a surface of the silicon melt to cause the vaporized dopant to enter the silicon melt as a dopant while pulling the single crystal silicon ingot from the silicon melt.

公开(公告)号：US20240297201A1

公开(公告)日：2024-09-05

申请号：US18609373

申请日：2024-03-19

申请人： SUMCO Corporation

发明人： Takeshi Kadono ,  Kazunari Kurita

IPC分类号： H01L27/146 ,  C23C14/48 ,  C30B25/18 ,  C30B25/20 ,  C30B29/06 ,  H01L21/02 ,  H01L21/265 ,  H01L21/322 ,  H01L29/167 ,  H01L29/36

CPC分类号： H01L27/14687 ,  C23C14/48 ,  C30B25/186 ,  C30B25/20 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02439 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02658 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/26566 ,  H01L21/3221 ,  H01L27/14689 ,  H01L29/167 ,  H01L29/36

摘要： Provided is a semiconductor epitaxial wafer having metal contamination reduced by achieving higher gettering capability, a method of producing the semiconductor epitaxial wafer, and a method of producing a solid-state image sensing device using the semiconductor epitaxial wafer. The method of producing a semiconductor epitaxial wafer 100 includes a first step of irradiating a semiconductor wafer 10 containing at least one of carbon and nitrogen with cluster ions 16 thereby forming a modifying layer 18 formed from a constituent element of the cluster ions 16 contained as a solid solution, in a surface portion of the semiconductor wafer 10; and a second step of forming a first epitaxial layer 20 on the modifying layer 18 of the semiconductor wafer 10.

公开(公告)号：US20240274437A1

公开(公告)日：2024-08-15

申请号：US18644475

申请日：2024-04-24

申请人： ASM IP Holding B.V.

发明人： Amir Kajbafvala ,  Joe Margetis ,  Xin Sun ,  David Kohen ,  Dieter Pierreux

IPC分类号： H01L21/02 ,  C23C16/08 ,  C23C16/24 ,  C23C16/42 ,  C23C16/455 ,  C23C16/52 ,  C30B25/16 ,  C30B25/18 ,  C30B29/06 ,  C30B29/52 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786

CPC分类号： H01L21/0262 ,  C23C16/08 ,  C23C16/24 ,  C23C16/42 ,  C23C16/45523 ,  C23C16/52 ,  C30B25/165 ,  C30B25/18 ,  C30B29/06 ,  C30B29/52 ,  H01L21/02507 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02603 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/78696

摘要： Methods and systems for forming structures including one or more layers comprising silicon germanium and one or more layers comprising silicon are disclosed. Exemplary methods can include using a surfactant, using particular precursors, and/or using a transition step to improve an interface between adjacent layers comprising silicon germanium and comprising silicon.

公开(公告)号：US20240271317A1

公开(公告)日：2024-08-15

申请号：US18568227

申请日：2022-09-30

申请人： XI’AN ESWIN MATERIAL TECHNOLOGY CO., LTD.

发明人： Zhenliang SONG ,  Shaojie SONG

IPC分类号： C30B15/20 ,  C30B15/10 ,  C30B29/06

CPC分类号： C30B15/203 ,  C30B15/10 ,  C30B29/06

摘要： A crystal puller for pulling a single-crystal silicon ingot includes a cylindrical heating apparatus and a cylindrical cooling apparatus. The heating apparatus is located above a water cooling jacket, and is configured such that a single-crystal silicon ingot enters a heat treatment chamber defined by the heating apparatus to be heat-treated when the single-crystal silicon ingot moves upwardly in a vertical direction. The cooling apparatus is located above the heating apparatus, and is configured such that the heat-treated single-crystal silicon ingot enters a cooling chamber defined by the cooling apparatus to be cool-treated when the single-crystal silicon ingot continues moving upwardly in the vertical direction.

公开(公告)号：US20240271316A1

公开(公告)日：2024-08-15

申请号：US18007486

申请日：2022-11-25

申请人： TCL ZHONGHUAN RENEWABLE ENERGY TECHNOLOGY CO., LTD.

发明人： Jiajun CHEN ,  Ruolin WU ,  Yonggang NIE ,  Libo CHENG

IPC分类号： C30B15/04 ,  C30B29/06

CPC分类号： C30B15/04 ,  C30B29/06

摘要： A device for supplementary doping on monocrystalline silicon alloy and methods for supplementary doping are provided. The device includes a hoisting member, a connecting member, and a containing member which are arranged in sequence from top to bottom in a vertical direction, wherein the hoisting member is connected with one end of the connecting member, and another end of the connecting member is movably connected with the containing member, so that the containing member is rotatable with respect to the connecting member. The containing member is provided with a first through-hole and a second through-hole, and the connecting member and the containing member are connected at a joint. A distance between the first through-hole and the joint is less than a distance between the second through-hole and the joint in the vertical direction.

公开(公告)号：US20240263343A1

公开(公告)日：2024-08-08

申请号：US18570788

申请日：2022-09-21

申请人： XI’AN ESWIN MATERIAL TECHNOLOGY CO., LTD.

发明人： Peng HENG

IPC分类号： C30B15/10 ,  C30B29/06

CPC分类号： C30B15/10 ,  C30B29/06

摘要： A quartz crucible and a crystal puller for growing a crystal ingot are provided. The quartz crucible includes: a crucible base made of silicon dioxide material; and a coating plated on a part of an inner surface of the crucible base, the coating is configured to prevent oxygen atoms of a coated part of the crucible base from precipitating during the growing process of the crystal ingot; a plating area of the coating gradually decreases along a direction from an opening of the crucible base to a bottom of the crucible base.

公开(公告)号：US12054849B2

公开(公告)日：2024-08-06

申请号：US17630553

申请日：2020-06-10

申请人： Byunggeun Ahn ,  Jae Hak Lee

发明人： Hyung Soo Ahn ,  Jae Hak Lee

IPC分类号： C30B25/14 ,  C23C16/24 ,  C23C16/30 ,  C23C16/448 ,  C23C16/455 ,  C23C16/458 ,  C30B25/10 ,  C30B25/12 ,  C30B25/16 ,  C30B25/20 ,  C30B29/06 ,  C30B29/40 ,  C30B29/66

CPC分类号： C30B25/14 ,  C23C16/24 ,  C23C16/303 ,  C23C16/4488 ,  C23C16/45512 ,  C23C16/4583 ,  C30B25/10 ,  C30B25/12 ,  C30B25/16 ,  C30B25/20 ,  C30B29/06 ,  C30B29/403 ,  C30B29/66

摘要： An apparatus for manufacturing hexagonal Si crystal includes: a reaction tube; a mixed source part placed on one side in the reaction tube, for receiving mixed source of silicon, aluminum, and gallium which are in a solid state; a halogenation reaction gas supply pipe for supplying a halogenation reaction gas to the mixed source part; a substrate mounting part placed on the other side in the reaction tube, for mounting a first substrate, wherein the first substrate is disposed such that a crystal growth surface of the first substrate faces downwards; a nitrification reaction gas supply pipe for supplying a nitrification reaction gas to the substrate mounting part; and a heater for heating the reaction tube. The heater heats the reaction tube in a temperature range of 1100-1300° C.