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公开(公告)号：US20220220631A9
公开(公告)日：2022-07-14
申请号：US16839808
申请日：2020-04-03
发明人： Tapas Jain , Sumeet S. Bhagavat , Zheng Lu , Feng-Chien Tsai , Hong-Huei Huang
摘要： A method for growing a single crystal silicon ingot by the Czochralski method having reduced deviation in diameter is disclosed.
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公开(公告)号：US20230272552A1
公开(公告)日：2023-08-31
申请号：US18163635
申请日：2023-02-02
发明人： Chun-Sheng Wu , Hong-Huei Huang , Wei-Chen Chou , Chen-Yi Lin , Feng-Chien Tsai , Zheng Lu
摘要： Ingot puller apparatus that include a silicon feed tube for adding solid silicon to a crucible assembly are disclosed. The silicon feed tubes include a conduit portion having an inner diameter and a kick plate disposed below the conduit portion. The kick plate extends across at least 60% of the inner diameter of the conduit portion.
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公开(公告)号：US20240076797A1
公开(公告)日：2024-03-07
申请号：US17939192
申请日：2022-09-07
发明人： Hong-Huei Huang , Benjamin Michael Meyer , Chun-Sheng Wu , Wei-Chen Chou , Chen-Yi Lin , Feng-Chien Tsai
摘要： A susceptor assembly for supporting a crucible during a crystal growth process includes a susceptor base, a tubular sidewall connected to the susceptor base, and a removable sacrifice ring interposed between the susceptor base and the sidewall. Each of the susceptor base and the sidewall is formed of a carbon-containing material. The susceptor base has an annular wall and a shoulder extending radially outward from an outer surface of the annular wall. The sidewall has a first end that receives the annular wall to connect the sidewall to the susceptor base. The sacrifice ring has a first surface that faces the outer surface of the annular wall, a second surface that faces an interior surface of the sidewall, and a ledge extending outward from the second surface that engages the first end of the sidewall.
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公开(公告)号：US20210269936A9
公开(公告)日：2021-09-02
申请号：US16839808
申请日：2020-04-03
发明人： Tapas Jain , Sumeet S. Bhagavat , Zheng Lu , Feng-Chien Tsai , Hong-Huei Huang
摘要： A method for growing a single crystal silicon ingot by the Czochralski method having reduced deviation in diameter is disclosed.
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公开(公告)号：US20200325594A1
公开(公告)日：2020-10-15
申请号：US16839808
申请日：2020-04-03
发明人： Tapas Jain , Sumeet S. Bhagavat , Zheng Lu , Feng-Chien Tsai , Hong-Huei Huang
摘要： A method for growing a single crystal silicon ingot by the Czochralski method having reduced deviation in diameter is disclosed.
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公开(公告)号：US20240309543A1
公开(公告)日：2024-09-19
申请号：US18675609
申请日：2024-05-28
发明人： Hong-Huei Huang , Benjamin Michael Meyer , Chun-Sheng Wu , Wei-Chen Chou , Chen-Yi Lin , Feng-Chien Tsai
CPC分类号： C30B15/10 , C30B15/20 , C30B29/06 , Y10T117/1032
摘要： A method of producing a single crystal silicon ingot from a silicon melt includes positioning a crucible in an interior of a susceptor assembly defined by a susceptor base and a sidewall, where each of the susceptor base and the sidewall are formed of a carbon-containing material and the susceptor assembly includes a removable sacrifice ring interposed between the susceptor base and the sidewall, adding polycrystalline silicon to the crucible, heating the polycrystalline silicon to cause a silicon melt to form in the crucible, pulling a single crystal silicon ingot from the melt, where silicon carbide (SiC) deposits accumulate on the sacrifice ring during the pulling the single crystal silicon ingot from the melt, and after the pulling the single crystal silicon ingot from the melt, removing the sacrifice ring having the accumulated SiC deposits from the susceptor base.
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公开(公告)号：US11959189B2
公开(公告)日：2024-04-16
申请号：US16839808
申请日：2020-04-03
发明人： Tapas Jain , Sumeet S. Bhagavat , Zheng Lu , Feng-Chien Tsai , Hong-Huei Huang
CPC分类号： C30B15/22 , C30B15/14 , C30B15/203 , C30B30/04
摘要： A method for growing a single crystal silicon ingot by the Czochralski method having reduced deviation in diameter is disclosed.
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公开(公告)号：US20220403549A1
公开(公告)日：2022-12-22
申请号：US17834807
申请日：2022-06-07
发明人： Zheng Lu , Shan-Hui Lin , Chun-Chin Tu , Chi-Yung Chen , Feng-Chien Tsai , Hong-Huei Huang
摘要： Methods for determining suitability of Czochralski growth conditions to produce silicon substrates for epitaxy. The methods involve evaluating substrates sliced from ingots grown under different growth conditions (e.g., impurity profiles) by imaging the wafer by infrared depolarization. An infrared depolarization parameter is generated for each epitaxial wafer. The parameters may be compared to determine which growth conditions are well-suited to produce substrates for epitaxial and/or post-epi heat treatments.
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