公开(公告)号：US20230323564A1

公开(公告)日：2023-10-12

申请号：US18334736

申请日：2023-06-14

Applicant: GlobalWafers Co., Ltd.

Inventor： Zheng Lu ,  Gaurab Samanta ,  Tse-Wei Lu ,  Feng-Chien Tsai

IPC: C30B33/02 ,  C30B29/06 ,  H01L21/02 ,  H01L21/00 ,  C30B15/20

CPC classification number: C30B33/02 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/02381 ,  H01L21/0262 ,  H01L21/00 ,  C30B15/203 ,  C30B15/206

Abstract: Nitrogen-doped CZ silicon crystal ingots and wafers sliced therefrom are disclosed that provide for post epitaxial thermally treated wafers having oxygen precipitate density and size that are substantially uniformly distributed radially and exhibit the lack of a significant edge effect. Methods for producing such CZ silicon crystal ingots are also provided by controlling the pull rate from molten silicon, the temperature gradient and the nitrogen concentration. Methods for simulating the radial bulk micro defect size distribution, radial bulk micro defect density distribution and oxygen precipitation density distribution of post epitaxial thermally treated wafers sliced from nitrogen-doped CZ silicon crystals are also provided.

公开(公告)号：US20220220631A9

公开(公告)日：2022-07-14

申请号：US16839808

申请日：2020-04-03

Applicant: GlobalWafers Co., Ltd.

Inventor： Tapas Jain ,  Sumeet S. Bhagavat ,  Zheng Lu ,  Feng-Chien Tsai ,  Hong-Huei Huang

IPC: C30B15/22 ,  C30B15/14 ,  C30B30/04 ,  C30B29/06 ,  C30B15/20

Abstract: A method for growing a single crystal silicon ingot by the Czochralski method having reduced deviation in diameter is disclosed.

公开(公告)号：US12018400B2

公开(公告)日：2024-06-25

申请号：US17651127

申请日：2022-02-15

Applicant: GlobalWafers Co., Ltd.

Inventor： Zheng Lu ,  Chi-Yung Chen ,  Hsien-Ta Tseng ,  Sumeet S. Bhagavat ,  Vahid Khalajzadeh

IPC: C30B15/10 ,  C30B15/14 ,  C30B29/06

CPC classification number: C30B29/06 ,  C30B15/10 ,  C30B15/14

Abstract: A system for producing a silicon ingot, the system includes a crystal puller, a pyrometer, an infrared (IR) camera, and a controller. The crystal puller includes a hot zone having one or more components therein, and in which a silicon ingot may be pulled. The pyrometer is positioned to view a region of interest within the hot zone. The IR camera is positioned to view one or more additional regions of interest within the hot zone. The controller is connected to the crystal puller, the pyrometer, and the IR camera. The controller is programmed to control the crystal puller to produce a silicon ingot, receive temperature data of the region of interest within the hot zone from the pyrometer while producing the silicon ingot, and receive IR images of the one or more additional regions of interest from the IR camera while producing the silicon ingot.

公开(公告)号：US11753741B2

公开(公告)日：2023-09-12

申请号：US17199645

申请日：2021-03-12

Applicant: GlobalWafers Co., Ltd.

Inventor： Zheng Lu ,  Gaurab Samanta ,  Tse-Wei Lu ,  Feng-Chien Tsai

IPC: C30B29/02 ,  C30B33/02 ,  C30B29/06 ,  H01L21/02 ,  H01L21/00 ,  C30B15/20

CPC classification number: C30B33/02 ,  C30B15/203 ,  C30B15/206 ,  C30B29/06 ,  H01L21/00 ,  H01L21/0262 ,  H01L21/02381 ,  H01L21/02532

Abstract: Nitrogen-doped CZ silicon crystal ingots and wafers sliced therefrom are disclosed that provide for post epitaxial thermally treated wafers having oxygen precipitate density and size that are substantially uniformly distributed radially and exhibit the lack of a significant edge effect. Methods for producing such CZ silicon crystal ingots are also provided by controlling the pull rate from molten silicon, the temperature gradient and the nitrogen concentration. Methods for simulating the radial bulk micro defect size distribution, radial bulk micro defect density distribution and oxygen precipitation density distribution of post epitaxial thermally treated wafers sliced from nitrogen-doped CZ silicon crystals are also provided.

公开(公告)号：US20230272552A1

公开(公告)日：2023-08-31

申请号：US18163635

申请日：2023-02-02

Applicant: GlobalWafers Co., Ltd.

Inventor： Chun-Sheng Wu ,  Hong-Huei Huang ,  Wei-Chen Chou ,  Chen-Yi Lin ,  Feng-Chien Tsai ,  Zheng Lu

IPC: C30B29/06 ,  C30B15/10 ,  C30B15/20

CPC classification number: C30B29/06 ,  C30B15/10 ,  C30B15/20

Abstract: Ingot puller apparatus that include a silicon feed tube for adding solid silicon to a crucible assembly are disclosed. The silicon feed tubes include a conduit portion having an inner diameter and a kick plate disposed below the conduit portion. The kick plate extends across at least 60% of the inner diameter of the conduit portion.

公开(公告)号：US20220259763A1

公开(公告)日：2022-08-18

申请号：US17651127

申请日：2022-02-15

Applicant: GlobalWafers Co., Ltd.

Inventor： Zheng Lu ,  Chi-Yung Chen ,  Hsien-Ta Tseng ,  Sumeet S. Bhagavat ,  Vahid Khalajzadeh

IPC: C30B29/06 ,  C30B15/10 ,  C30B15/14

Abstract: A system for producing a silicon ingot, the system includes a crystal puller, a pyrometer, an infrared (IR) camera, and a controller. The crystal puller includes a hot zone having one or more components therein, and in which a silicon ingot may be pulled. The pyrometer is positioned to view a region of interest within the hot zone. The IR camera is positioned to view one or more additional regions of interest within the hot zone. The controller is connected to the crystal puller, the pyrometer, and the IR camera. The controller is programmed to control the crystal puller to produce a silicon ingot, receive temperature data of the region of interest within the hot zone from the pyrometer while producing the silicon ingot, and receive IR images of the one or more additional regions of interest from the IR camera while producing the silicon ingot.

公开(公告)号：US20210198805A1

公开(公告)日：2021-07-01

申请号：US17199645

申请日：2021-03-12

Applicant: GlobalWafers Co., Ltd.

Inventor： Zheng Lu ,  Gaurab Samanta ,  Tse-Wei Lu ,  Feng-Chien Tsai

IPC: C30B33/02 ,  C30B29/06 ,  H01L21/02 ,  H01L21/00 ,  C30B15/20

Abstract: Nitrogen-doped CZ silicon crystal ingots and wafers sliced therefrom are disclosed that provide for post epitaxial thermally treated wafers having oxygen precipitate density and size that are substantially uniformly distributed radially and exhibit the lack of a significant edge effect. Methods for producing such CZ silicon crystal ingots are also provided by controlling the pull rate from molten silicon, the temperature gradient and the nitrogen concentration. Methods for simulating the radial bulk micro defect size distribution, radial bulk micro defect density distribution and oxygen precipitation density distribution of post epitaxial thermally treated wafers sliced from nitrogen-doped CZ silicon crystals are also provided.

公开(公告)号：US12227874B2

公开(公告)日：2025-02-18

申请号：US17834807

申请日：2022-06-07

Applicant: GlobalWafers Co., Ltd.

Inventor： Zheng Lu ,  Shan-Hui Lin ,  Chun-Chin Tu ,  Chi-Yung Chen ,  Feng-Chien Tsai ,  Hong-Huei Huang

IPC: C30B15/20 ,  C30B15/00 ,  C30B25/16 ,  C30B25/20 ,  C30B29/06 ,  G01N21/84

Abstract: Methods for determining suitability of Czochralski growth conditions to produce silicon substrates for epitaxy. The methods involve evaluating substrates sliced from ingots grown under different growth conditions (e.g., impurity profiles) by imaging the wafer by infrared depolarization. An infrared depolarization parameter is generated for each epitaxial wafer. The parameters may be compared to determine which growth conditions are well-suited to produce substrates for epitaxial and/or post-epi heat treatments.

公开(公告)号：US12152314B2

公开(公告)日：2024-11-26

申请号：US17834804

申请日：2022-06-07

Applicant: GlobalWafers Co., Ltd.

Inventor： Shan-Hui Lin ,  Chun-Chin Tu ,  Zheng Lu

IPC: H01L21/66 ,  C30B25/16 ,  C30B25/20 ,  C30B29/06 ,  C30B33/02 ,  G01N21/21 ,  G01N21/84 ,  H01L21/02

Abstract: Methods for determining suitability of a silicon substrate for epitaxy and/or for determining slip resistance during epitaxy and post-epitaxy thermal treatment are disclosed. The methods involve evaluating different substrates of the epitaxial wafers by imaging the wafer by infrared depolarization. An infrared depolarization parameter is generated for each epitaxial wafer. The parameters may be compared to determine which substrates are well-suited for epitaxial and/or post-epi heat treatments.

公开(公告)号：US20230304893A1

公开(公告)日：2023-09-28

申请号：US18184886

申请日：2023-03-16

Applicant: GlobalWafers Co., Ltd.

Inventor： Zheng Lu ,  William L. Luter ,  Bashar Ahmed Barghouti ,  Wei-Ru Li

IPC: G01M13/021 ,  C30B15/20 ,  C30B15/30 ,  C30B29/06

CPC classification number: G01M13/021 ,  C30B15/20 ,  C30B15/30 ,  C30B29/06

Abstract: A detection system includes a loadcell connected to a gear and motor of a crystal puller apparatus to measure force applied to the gear in a time domain. The data is analyzed though a Fourier transform to obtain data in the frequency domain. The frequency domain data includes an amplitude which corresponds to mechanical wear of the gear. The time domain data is compared against a threshold amplitude to determine if the gears have mechanical wear such that preventative maintenance can be performed on the motor.