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公开(公告)号：US20240309543A1
公开(公告)日：2024-09-19
申请号：US18675609
申请日：2024-05-28
Applicant: GlobalWafers Co., Ltd.
Inventor： Hong-Huei Huang , Benjamin Michael Meyer , Chun-Sheng Wu , Wei-Chen Chou , Chen-Yi Lin , Feng-Chien Tsai
CPC classification number: C30B15/10 , C30B15/20 , C30B29/06 , Y10T117/1032
Abstract: A method of producing a single crystal silicon ingot from a silicon melt includes positioning a crucible in an interior of a susceptor assembly defined by a susceptor base and a sidewall, where each of the susceptor base and the sidewall are formed of a carbon-containing material and the susceptor assembly includes a removable sacrifice ring interposed between the susceptor base and the sidewall, adding polycrystalline silicon to the crucible, heating the polycrystalline silicon to cause a silicon melt to form in the crucible, pulling a single crystal silicon ingot from the melt, where silicon carbide (SiC) deposits accumulate on the sacrifice ring during the pulling the single crystal silicon ingot from the melt, and after the pulling the single crystal silicon ingot from the melt, removing the sacrifice ring having the accumulated SiC deposits from the susceptor base.
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公开(公告)号：US11959189B2
公开(公告)日：2024-04-16
申请号：US16839808
申请日：2020-04-03
Applicant: GlobalWafers Co., Ltd.
Inventor： Tapas Jain , Sumeet S. Bhagavat , Zheng Lu , Feng-Chien Tsai , Hong-Huei Huang
CPC classification number: C30B15/22 , C30B15/14 , C30B15/203 , C30B30/04
Abstract: A method for growing a single crystal silicon ingot by the Czochralski method having reduced deviation in diameter is disclosed.
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公开(公告)号：US20220403549A1
公开(公告)日：2022-12-22
申请号：US17834807
申请日：2022-06-07
Applicant: GlobalWafers Co., Ltd.
Inventor： Zheng Lu , Shan-Hui Lin , Chun-Chin Tu , Chi-Yung Chen , Feng-Chien Tsai , Hong-Huei Huang
Abstract: Methods for determining suitability of Czochralski growth conditions to produce silicon substrates for epitaxy. The methods involve evaluating substrates sliced from ingots grown under different growth conditions (e.g., impurity profiles) by imaging the wafer by infrared depolarization. An infrared depolarization parameter is generated for each epitaxial wafer. The parameters may be compared to determine which growth conditions are well-suited to produce substrates for epitaxial and/or post-epi heat treatments.
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公开(公告)号：US20240392466A1
公开(公告)日：2024-11-28
申请号：US18323770
申请日：2023-05-25
Applicant: GlobalWafers Co., Ltd.
Inventor： Chun-Sheng Wu , Hong-Huei Huang , Hsien-Ta Tseng , Chen-Yi Lin , Feng-Chien Tsai , Yu-Chiao Wu , Benjamin Michael Meyer , Young Gil Jeong , Che-Min Chang , Carissima Marie Hudson
Abstract: Ingot puller apparatus for producing a doped single crystal silicon ingot are disclosed. The ingot puller apparatus includes a dopant feeder having a first dopant receptacle for holding a first batch of dopant and a second dopant receptacle for holding a second batch of dopant. A rotation mechanism rotates the first dopant receptacle to release the first batch of dopant into the crucible and rotates the second dopant receptacle to release the second batch of dopant into the crucible.
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公开(公告)号：US20220220631A9
公开(公告)日：2022-07-14
申请号：US16839808
申请日：2020-04-03
Applicant: GlobalWafers Co., Ltd.
Inventor： Tapas Jain , Sumeet S. Bhagavat , Zheng Lu , Feng-Chien Tsai , Hong-Huei Huang
Abstract: A method for growing a single crystal silicon ingot by the Czochralski method having reduced deviation in diameter is disclosed.
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Patent Agency Ranking
公开(公告)号：US12202017B2
公开(公告)日：2025-01-21
申请号：US18300850
申请日：2023-04-14
Applicant: GlobalWafers Co., Ltd.
Inventor： Chin-Hung Ho , Chih-Kai Cheng , Chen-Yi Lin , Feng-Chien Tsai , Tung-Hsiao Li , YoungGil Jeong , Jin Yong Uhm
Abstract: Cleaning tools for cleaning the pull cable of an ingot puller apparatus and methods for cleaning the pull cable are disclosed. The cleaning tool includes a chamber for receiving the pull cable. Pressurized fluid is discharged through one or more nozzles to detach debris from the pull cable. The fluid and debris are collected in an exhaust plenum of the cleaning tool and are expelled through an exhaust tube. The cleaning tool includes one or more guides that guide the cleaning tool in an upper segment of the ingot puller apparatus.
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7.发明公开公开(公告)号：US20240240355A1
公开(公告)日：2024-07-18
申请号：US18411957
申请日：2024-01-12
Applicant: GlobalWafers Co., Ltd.
Inventor： Carissima Marie Hudson , JaeWoo Ryu , Chi-Yung Chen , Chih-Hsun Wei , Feng-Chien Tsai , Chung-Chi Hsiao
CPC classification number: C30B29/06 , C30B15/002 , C30B15/14 , C30B15/203 , C30B15/30 , C30B30/04 , C30B31/04
Abstract: Methods for producing single crystal silicon wafers for use in insulated gate bipolar transistors are disclosed. The methods may involve determining the radial profile of a ratio between (i) a growth velocity, v, and (ii) an axial temperature gradient, G for an ingot with relatively low oxygen. Based on the radial v/G profile, a nitrogen concentration which widens the v/G window to produce Perfect Silicon free of COP and gate oxide failures may be selected.
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公开(公告)号：US20230323564A1
公开(公告)日：2023-10-12
申请号：US18334736
申请日：2023-06-14
Applicant: GlobalWafers Co., Ltd.
Inventor： Zheng Lu , Gaurab Samanta , Tse-Wei Lu , Feng-Chien Tsai
CPC classification number: C30B33/02 , C30B29/06 , H01L21/02532 , H01L21/02381 , H01L21/0262 , H01L21/00 , C30B15/203 , C30B15/206
Abstract: Nitrogen-doped CZ silicon crystal ingots and wafers sliced therefrom are disclosed that provide for post epitaxial thermally treated wafers having oxygen precipitate density and size that are substantially uniformly distributed radially and exhibit the lack of a significant edge effect. Methods for producing such CZ silicon crystal ingots are also provided by controlling the pull rate from molten silicon, the temperature gradient and the nitrogen concentration. Methods for simulating the radial bulk micro defect size distribution, radial bulk micro defect density distribution and oxygen precipitation density distribution of post epitaxial thermally treated wafers sliced from nitrogen-doped CZ silicon crystals are also provided.
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公开(公告)号：US20240392467A1
公开(公告)日：2024-11-28
申请号：US18323775
申请日：2023-05-25
Applicant: GlobalWafers Co., Ltd.
Inventor： Chun-Sheng Wu , Hong-Huei Huang , Hsien-Ta Tseng , Chen-Yi Lin , Feng-Chien Tsai , Yu-Chiao Wu , Benjamin Michael Meyer , Young Gil Jeong , Che-Min Chang , Carissima Marie Hudson
Abstract: Ingot puller apparatus for producing a doped single crystal silicon ingot are disclosed. The ingot puller apparatus includes a dopant feeder having a first dopant receptacle for holding a first batch of dopant and a second dopant receptacle for holding a second batch of dopant. A rotation mechanism rotates the first dopant receptacle to release the first batch of dopant into the crucible and rotates the second dopant receptacle to release the second batch of dopant into the crucible.
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公开(公告)号：US20230347388A1
公开(公告)日：2023-11-02
申请号：US18300850
申请日：2023-04-14
Applicant: GlobalWafers Co., Ltd.
Inventor： Chin-Hung Ho , Chih-Kai Cheng , Chen-Yi Lin , Feng-Chien Tsai , Tung-Hsiao Li , YoungGil Jeong , Jin Yong Uhm
Abstract: Cleaning tools for cleaning the pull cable of an ingot puller apparatus and methods for cleaning the pull cable are disclosed. The cleaning tool includes a chamber for receiving the pull cable. Pressurized fluid is discharged through one or more nozzles to detach debris from the pull cable. The fluid and debris are collected in an exhaust plenum of the cleaning tool and are expelled through an exhaust tube. The cleaning tool includes one or more guides that guide the cleaning tool in an upper segment of the ingot puller apparatus.
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