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公开(公告)号：US12110608B2
公开(公告)日：2024-10-08
申请号：US17235809
申请日：2021-04-20
申请人： SK SILTRON CO., LTD.
发明人： Jung Ryul Kim
CPC分类号： C30B15/04 , B01D46/448 , B01D46/48 , B08B7/0007 , C30B15/00 , B01D2273/10 , B01D2273/30 , B01D2279/35
摘要： A method of oxidation-combusting an ingot grower comprises a) blocking between the filter housing and the exhaust pipe, b) forming the filter housing in a vacuum state, and c) injecting air into the filter housing through an injection pipe connected to a first side of the filter housing to combust the filter housing.
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2.发明公开公开(公告)号：US20240309541A1
公开(公告)日：2024-09-19
申请号：US18673020
申请日：2024-05-23
CPC分类号： C30B15/04 , C30B15/14 , C30B29/06 , Y10T117/1032 , Y10T117/1056
摘要： A method for producing a single crystal silicon ingot includes adding polycrystalline silicon to a crucible disposed within a chamber defined by a housing of an ingot puller apparatus, maintaining the chamber at a first pressure, heating the chamber using radiant heat to melt the polycrystalline silicon and form a silicon melt in the crucible, pulling a single crystal silicon ingot from the silicon melt, channeling a liquid dopant at a second pressure greater than the first pressure into a feed tube positioned in the chamber, vaporizing the liquid dopant into a vaporized dopant by flash evaporation at the first pressure within the feed tube, and directing the vaporized dopant from the feed tube toward a surface of the silicon melt to cause the vaporized dopant to enter the silicon melt as a dopant while pulling the single crystal silicon ingot from the silicon melt.
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3.发明公开公开(公告)号：US20240271316A1
公开(公告)日：2024-08-15
申请号：US18007486
申请日：2022-11-25
发明人： Jiajun CHEN , Ruolin WU , Yonggang NIE , Libo CHENG
摘要： A device for supplementary doping on monocrystalline silicon alloy and methods for supplementary doping are provided. The device includes a hoisting member, a connecting member, and a containing member which are arranged in sequence from top to bottom in a vertical direction, wherein the hoisting member is connected with one end of the connecting member, and another end of the connecting member is movably connected with the containing member, so that the containing member is rotatable with respect to the connecting member. The containing member is provided with a first through-hole and a second through-hole, and the connecting member and the containing member are connected at a joint. A distance between the first through-hole and the joint is less than a distance between the second through-hole and the joint in the vertical direction.
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公开(公告)号：US20240200224A1
公开(公告)日：2024-06-20
申请号：US18555514
申请日：2022-08-31
发明人： Jin Sung PARK , Han Woong JEON , Kyung Seok LEE , Keun Ho KIM , Young Min LEE
CPC分类号： C30B15/04 , C30B15/002 , C30B29/06
摘要： An ingot growing apparatus, according to an embodiment of the present invention, comprises: a growth furnace in which a main crucible accommodating molten silicon for growing an ingot is disposed; a preliminary melting part which receives and melts a solid silicon material and a dopant, and has a preliminary crucible that supplies the molten silicon to the main crucible; a transfer part which transfers the solid silicon material and the dopant to the preliminary crucible; a silicon supply part which supplies the solid silicon material to the transfer part; and a dopant supply part which is disposed on an upper side of the transfer part and supplies the dopant to the transfer part according to a concentration of the dopant melted in the main crucible.
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公开(公告)号：US11987901B2
公开(公告)日：2024-05-21
申请号：US17711691
申请日：2022-04-01
IPC分类号： C30B29/06 , C30B15/00 , C30B15/04 , C30B15/14 , C30B15/20 , C30B29/66 , C30B25/10 , C30B25/20
CPC分类号： C30B29/06 , C30B15/007 , C30B15/04 , C30B15/14 , C30B15/203 , C30B29/66 , C30B25/10 , C30B25/20
摘要： Methods for preparing single crystal silicon substrates for epitaxial growth are disclosed. The methods may involve control of the (i) a growth velocity, v, and/or (ii) an axial temperature gradient, G, during the growth of an ingot segment such that v/G is less than a critical v/G and/or is less than a value of v/G that depends on the boron concentration of the ingot. Methods for preparing epitaxial wafers are also disclosed.
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6.发明公开公开(公告)号：US20240125004A1
公开(公告)日：2024-04-18
申请号：US18046319
申请日：2022-10-13
发明人： Chieh HU , Hsien-Ta TSENG , Chun-Sheng WU , William Lynn LUTER , Liang-Chin CHEN , Sumeet BHAGAVAT , Carissima Marie HUDSON , Yu-Chiao Wu
摘要： A method of growing a single crystal ingot includes growing a single crystal silicon ingot from a silicon melt in a crucible within an inner chamber, adding a volatile dopant into a feed tube, positioning the feed tube within an inner chamber at a first height relative to a surface of the melt, adjusting the feed tube within the inner chamber to a second height at a speed rate, and heating the volatile dopant to form a gaseous dopant as the feed tube is moved from the first height to the second height at the speed rate. Each of the second height and the speed rate are selected to control a vaporization rate of the volatile dopant. The method also includes introducing dopant species into the melt while growing the ingot by contacting the surface of the melt with the gaseous dopant.
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7.发明公开公开(公告)号：US20240125003A1
公开(公告)日：2024-04-18
申请号：US18046314
申请日：2022-10-13
发明人： Chieh HU , Hsien-Ta TSENG , Chun-Sheng WU , William Lynn LUTER , Liang-Chin CHEN , Sumeet BHAGAVAT , Carissima Marie HUDSON , Yu-Chiao Wu
摘要： A method of growing a single crystal ingot includes growing a single crystal silicon ingot from a silicon melt in a crucible within an inner chamber, adding a volatile dopant into a feed tube, positioning the feed tube within an inner chamber at a first height relative to a surface of the melt, adjusting the feed tube within the inner chamber to a second height at a speed rate, and heating the volatile dopant to form a gaseous dopant as the feed tube is moved from the first height to the second height at the speed rate. Each of the second height and the speed rate are selected to control a vaporization rate of the volatile dopant. The method also includes introducing dopant species into the melt while growing the ingot by contacting the surface of the melt with the gaseous dopant.
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8.发明公开公开(公告)号：US20240035198A1
公开(公告)日：2024-02-01
申请号：US18356380
申请日：2023-07-21
摘要： A method for producing a single crystal silicon ingot from a silicon melt includes providing a crucible within an inner chamber of an ingot puller, the crucible including an inner surface and a synthetic liner on the inner surface. The method further includes adding an initial charge of polysilicon to the crucible, melting the initial charge of polysilicon to cause the silicon melt to form in the crucible, and dissolving a melt modifier into the silicon melt to devitrify the synthetic liner and form a crystallized layer on the crucible. The crystallized layer has a thickness less than 700 microns. The method further includes pulling a single crystal silicon ingot from the silicon melt.
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公开(公告)号：US11814745B2
公开(公告)日：2023-11-14
申请号：US16622502
申请日：2018-06-15
申请人： SUMCO CORPORATION
发明人： Yasufumi Kawakami , Koichi Maegawa
摘要： A production method of monocrystalline silicon includes: growing the monocrystalline silicon having a straight-body diameter in a range from 301 mm to 330 mm that is pulled up through a Czochralski process from a silicon melt including a dopant in a form of red phosphorus; controlling a resistivity of the monocrystalline silicon at a straight-body start point to fall within a range from 1.20 mΩcm to 1.35 mΩcm; and subsequently sequentially decreasing the resistivity of the monocrystalline silicon to fall within a range from 0.7 mΩcm to 1.0 mΩcm at a part of the monocrystalline silicon.
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公开(公告)号：US20230340691A1
公开(公告)日：2023-10-26
申请号：US18026975
申请日：2021-09-21
申请人： SUMCO Corporation
摘要： Provided is a manufacturing method of a silicon single crystal according to the present invention includes a melting process for generating a silicon melt containing a primary dopant, and a crystal pulling-up process that pulls up a silicon single crystal from the silicon melt. The crystal pulling-up process includes at least one additional doping process for adding a dopant raw material containing a secondary dopant into the silicon melt. A flow rate of Ar gas during a first period in which the secondary dopant is not added is set as a first flow rate, and the flow rate of Ar gas during a second period that includes a period in which the secondary dopant is added is set as a second flow rate that is greater than the first flow rate..---
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