-
1.发明公开公开(公告)号：US20240247398A1
公开(公告)日：2024-07-25
申请号：US18410347
申请日：2024-01-11
Applicant: GlobalWafers Co., Ltd.
Inventor： Carissima Marie Hudson , JaeWoo Ryu , William Lynn Luter , Matteo Pannocchia
Abstract: Ingot puller apparatus and methods for growing a single crystal silicon ingots with reduced lower chamber deposits are disclosed.
-
公开(公告)号：US20220205132A1
公开(公告)日：2022-06-30
申请号：US17139367
申请日：2020-12-31
Applicant: GlobalWafers Co., Ltd.
Inventor： Yu-Chiao Wu , William Lynn Luter , Richard J. Phillips , James Dean Eoff
Abstract: An ingot puller apparatus for producing a doped single crystal silicon ingot includes a housing defining a chamber, a crucible disposed within the chamber, and a dopant injector extending into the housing. The dopant injector includes a delivery module attached to and extending through the housing into the chamber. The delivery module includes a dopant injection tube positioned within the chamber and a vaporization cup positioned within the dopant injection tube and the chamber. The second valve selectively channels the liquid dopant into the vaporization cup and the vaporization cup vaporizes the liquid dopant into a vaporized dopant.
-
公开(公告)号：US11866844B2
公开(公告)日：2024-01-09
申请号：US17139352
申请日：2020-12-31
Applicant: GlobalWafers Co., Ltd.
Inventor： Yu-Chiao Wu , William Lynn Luter , Richard J. Phillips , James Dean Eoff
Abstract: A method for doping a single crystal silicon ingot pulled includes heating a vaporization cup. The method also includes maintaining a pressure of an interior of the housing at a first pressure. The method further includes injecting liquid dopant into the dopant injection tube and the vaporization cup. A pressure of the liquid dopant is maintained at a second pressure greater than the first pressure prior to injection into the dopant injection tube and the vaporization cup. The method also includes vaporizing the liquid dopant into vaporized dopant within the housing. The liquid dopant is vaporized by flash evaporation by heating the liquid dopant with the vaporization cup and reducing the pressure of the liquid dopant from the second pressure to the first pressure by injecting the liquid dopant into the housing. The method further includes channeling the vaporized dopant into the housing using the dopant injection tube.
-
公开(公告)号：US20220205131A1
公开(公告)日：2022-06-30
申请号：US17139352
申请日：2020-12-31
Applicant: GlobalWafers Co., Ltd.
Inventor： Yu-Chiao Wu , William Lynn Luter , Richard J. Phillips , James Dean Eoff
Abstract: A method for doping a single crystal silicon ingot pulled includes heating a vaporization cup. The method also includes maintaining a pressure of an interior of the housing at a first pressure. The method further includes injecting liquid dopant into the dopant injection tube and the vaporization cup. A pressure of the liquid dopant is maintained at a second pressure greater than the first pressure prior to injection into the dopant injection tube and the vaporization cup. The method also includes vaporizing the liquid dopant into vaporized dopant within the housing. The liquid dopant is vaporized by flash evaporation by heating the liquid dopant with the vaporization cup and reducing the pressure of the liquid dopant from the second pressure to the first pressure by injecting the liquid dopant into the housing. The method further includes channeling the vaporized dopant into the housing using the dopant injection tube.
-
公开(公告)号：US20220154365A1
公开(公告)日：2022-05-19
申请号：US17455347
申请日：2021-11-17
Applicant: GlobalWafers Co., Ltd.
Inventor： Benjamin Michael Meyer , William Lynn Luter , JaeWoo Ryu
Abstract: A measurement system includes a reflector defining a central passage and an opening, a measurement assembly, and a controller. The measurement assembly includes a run pin having a head that is visible through the opening, a camera to capture images through the opening in the reflector, and a laser to transmit coherent light through the opening to the head of the run pin to produce a reflection of the run pin on the surface of the silicon melt. The controller is programmed to control the laser to direct coherent light from the laser to the run pin, control the camera capture images through the opening while the coherent light is directed at the run pin, and determine a distance between the surface of the silicon melt and a bottom surface of the reflector based on a location of the reflection of the run pin in the captured images.
-
Patent Agency Ranking
6.发明授权公开(公告)号：US12221718B2
公开(公告)日：2025-02-11
申请号：US18046319
申请日：2022-10-13
Applicant: GlobalWafers Co., Ltd.
Inventor： Chieh Hu , Hsien-Ta Tseng , Chun-Sheng Wu , William Lynn Luter , Liang-Chin Chen , Sumeet Bhagavat , Carissima Marie Hudson , Yu-Chiao Wu
Abstract: A method of growing a single crystal ingot includes growing a single crystal silicon ingot from a silicon melt in a crucible within an inner chamber, adding a volatile dopant into a feed tube, positioning the feed tube within an inner chamber at a first height relative to a surface of the melt, adjusting the feed tube within the inner chamber to a second height at a speed rate, and heating the volatile dopant to form a gaseous dopant as the feed tube is moved from the first height to the second height at the speed rate. Each of the second height and the speed rate are selected to control a vaporization rate of the volatile dopant. The method also includes introducing dopant species into the melt while growing the ingot by contacting the surface of the melt with the gaseous dopant.
-
7.发明公开公开(公告)号：US20240309541A1
公开(公告)日：2024-09-19
申请号：US18673020
申请日：2024-05-23
Applicant: GlobalWafers Co., Ltd.
Inventor： Yu-Chiao Wu , William Lynn Luter , Richard J. Phillips , James Dean Eoff
CPC classification number: C30B15/04 , C30B15/14 , C30B29/06 , Y10T117/1032 , Y10T117/1056
Abstract: A method for producing a single crystal silicon ingot includes adding polycrystalline silicon to a crucible disposed within a chamber defined by a housing of an ingot puller apparatus, maintaining the chamber at a first pressure, heating the chamber using radiant heat to melt the polycrystalline silicon and form a silicon melt in the crucible, pulling a single crystal silicon ingot from the silicon melt, channeling a liquid dopant at a second pressure greater than the first pressure into a feed tube positioned in the chamber, vaporizing the liquid dopant into a vaporized dopant by flash evaporation at the first pressure within the feed tube, and directing the vaporized dopant from the feed tube toward a surface of the silicon melt to cause the vaporized dopant to enter the silicon melt as a dopant while pulling the single crystal silicon ingot from the silicon melt.
-
公开(公告)号：US20240167193A1
公开(公告)日：2024-05-23
申请号：US18515801
申请日：2023-11-21
Applicant: GlobalWafers Co., Ltd.
Inventor： JaeWoo Ryu , SeongSu Park , JunHwan Ji , Carissima Marie Hudson , William Lynn Luter
CPC classification number: C30B15/24 , C30B15/02 , C30B15/10 , C30B15/206
Abstract: A crystal ingot puller includes a crucible for holding a crystal melt, a crystal puller housing that defines a growth chamber, and a polycrystalline feed system for supplying chunk polycrystalline to the crucible. The polycrystalline feed system includes a feed tube having an outer sidewall, an inlet end and an outlet end, and a cooling jacket surrounding the outer sidewall of the feed tube at the outlet end of the feed tube. The cooling jacket cools the outlet end during operation of the ingot puller.
-
公开(公告)号：US11795569B2
公开(公告)日：2023-10-24
申请号：US17139367
申请日：2020-12-31
Applicant: GlobalWafers Co., Ltd.
Inventor： Yu-Chiao Wu , William Lynn Luter , Richard J. Phillips , James Dean Eoff
CPC classification number: C30B15/04 , C30B15/14 , C30B29/06 , Y10T117/1032 , Y10T117/1056
Abstract: An ingot puller apparatus for producing a doped single crystal silicon ingot includes a housing defining a chamber, a crucible disposed within the chamber, and a dopant injector extending into the housing. The dopant injector includes a delivery module attached to and extending through the housing into the chamber. The delivery module includes a dopant injection tube positioned within the chamber and a vaporization cup positioned within the dopant injection tube and the chamber. The second valve selectively channels the liquid dopant into the vaporization cup and the vaporization cup vaporizes the liquid dopant into a vaporized dopant.
-
10.发明授权公开(公告)号：US12195871B2
公开(公告)日：2025-01-14
申请号：US18046314
申请日：2022-10-13
Applicant: GlobalWafers Co., Ltd.
Inventor： Chieh Hu , Hsien-Ta Tseng , Chun-Sheng Wu , William Lynn Luter , Liang-Chin Chen , Sumeet Bhagavat , Carissima Marie Hudson , Yu-Chiao Wu
Abstract: A method of growing a single crystal ingot includes growing a single crystal silicon ingot from a silicon melt in a crucible within an inner chamber, adding a volatile dopant into a feed tube, positioning the feed tube within an inner chamber at a first height relative to a surface of the melt, adjusting the feed tube within the inner chamber to a second height at a speed rate, and heating the volatile dopant to form a gaseous dopant as the feed tube is moved from the first height to the second height at the speed rate. Each of the second height and the speed rate are selected to control a vaporization rate of the volatile dopant. The method also includes introducing dopant species into the melt while growing the ingot by contacting the surface of the melt with the gaseous dopant.
-
-
-
-
-
-
-
-
-
Search Results
13
records
(took 0.015 seconds)
