公开(公告)号：US20240247399A1

公开(公告)日：2024-07-25

申请号：US18040098

申请日：2022-11-28

Applicant: TCL ZHONGHUAN RENEWABLE ENERGY TECHNOLOGY CO., LTD

Inventor： Xiaodong LI ,  Lei AN

IPC: C30B15/02 ,  C30B15/00 ,  C30B15/20 ,  C30B29/06

CPC classification number: C30B15/02 ,  C30B15/002 ,  C30B15/20 ,  C30B29/06

Abstract: The present disclosure provides raw material re-feeding apparatus and monocrystal manufacturing apparatus having the same. The raw material re-feeding apparatus includes a charger body, a storage, a fixed conveyer, a mobile conveyer, and a switching device. The fixed conveyer and the storage are disposed in the charger body, and the fixed conveyer is disposed at a discharging end of the storage for conveying materials. A charging end of the mobile conveyer is aligned with a discharging end of the fixed conveyer, and the mobile conveyer is movable relative to a monocrystal furnace, so that materials flowing out of the fixed conveyer can fall onto the mobile conveyer. The switching device is connected to the charger body and the monocrystal furnace for achieving connection/disconnection between the charger body and the monocrystal furnace.

公开(公告)号：US20240052523A1

公开(公告)日：2024-02-15

申请号：US18494746

申请日：2023-10-25

Applicant: MEISHAN BOYA ADVANCED MATERIALS CO., LTD.

Inventor： Yu WANG ,  Weiming GUAN ,  Min LI

IPC: C30B29/22 ,  C01B33/20 ,  C30B15/02

CPC classification number: C30B29/22 ,  C01B33/20 ,  C30B15/02 ,  C01P2002/52 ,  C01F17/00

Abstract: The present disclosure discloses a method for growing a crystal in oxygen atmosphere. The method may include compensating a weight of a reactant, introducing a flowing gas, improving a volume ratio of oxygen during a cooling process, providing a heater in a temperature field, and optimizing parameters. According to the method, problems may be solved, for example, cracking and component deviation of the crystal during a crystal growth process, and without oxygen-free vacancy. The method for growing the crystal may have excellent repeatability and crystal performance consistency.

公开(公告)号：US11827826B2

公开(公告)日：2023-11-28

申请号：US17647974

申请日：2022-01-13

Applicant: MEISHAN BOYA ADVANCED MATERIALS CO., LTD.

Inventor： Yu Wang ,  Weiming Guan ,  Min Li

IPC: C30B15/02 ,  C09K11/77 ,  C30B29/22

CPC classification number: C09K11/7774 ,  C30B15/02 ,  C30B29/22

Abstract: The present disclosure relates to a method for growing a crystal. The method includes: weighting reactants according to a molar ratio of the reactants according to a reaction equation for generating the crystal after a first preprocessing operation is performed on the reactants, wherein the first preprocessing operation includes a roasting operation under 800° C.˜1400° C.; placing the reactants on which a second preprocessing operation has been performed into a crystal growth device, wherein the second preprocessing operation includes at least one of an ingredient mixing operation or a pressing operation at room temperature; introducing a flowing gas into the crystal growth device after sealing the crystal growth device; and activating the crystal growth device to execute a crystal growth to grow the crystal based on Czochralski technique.

公开(公告)号：US11739436B2

公开(公告)日：2023-08-29

申请号：US17038591

申请日：2020-09-30

Applicant: Jinko Green Energy (Shanghai) Management Co., LTD ,  JINKO SOLAR CO., LTD.

Inventor： Jun Yang ,  Weize Shang ,  Xiaolong Bai

IPC: C30B15/00 ,  C30B15/02 ,  C30B15/12 ,  C30B15/22 ,  C30B29/06

CPC classification number: C30B15/002 ,  C30B15/005 ,  C30B15/02 ,  C30B15/12 ,  C30B15/22 ,  C30B29/06

Abstract: Provided is an apparatus and a method for continuous crystal pulling. The apparatus includes: a crucible including a first sub-crucible and a second sub-crucible located at inner side of the first sub-crucible; a draft tube located above the crucible; and a delivery duct supplying materials to the crucible. A ratio of inner diameter of the second sub-crucible to outer diameter of the draft tube is ≥1.05. In a first state, a distance between bottom surface of the draft tube and bottom surface of the crucible is a first distance, in a second state, a distance between bottom surface of the draft tube and bottom surface of the crucible is a second distance. The first distance is greater than the second distance. In the first and second states, a distance between a crystal-liquid interface in the crucible and the bottom surface of the draft tube remains substantially unchanged.

公开(公告)号：US11655557B2

公开(公告)日：2023-05-23

申请号：US17216659

申请日：2021-03-29

Applicant: MEISHAN BOYA ADVANCED MATERIALS CO., LTD.

Inventor： Yu Wang ,  Weiming Guan ,  Zhenxing Liang ,  Min Li

IPC: C30B35/00 ,  C30B15/02 ,  C30B15/22 ,  C30B29/22 ,  C30B15/10 ,  C30B15/14 ,  C30B29/28 ,  C30B29/34

CPC classification number: C30B15/02 ,  C30B15/10 ,  C30B15/14 ,  C30B15/22 ,  C30B29/22 ,  C30B29/28 ,  C30B29/34

Abstract: The present disclosure provides a method for crystal growth. The method may include at one of the following operations: weighing reactants for growing an oxide crystal after a first preprocessing operation is performed on the reactants; placing the reactants, on which a second preprocessing operation has been performed, into a crystal growth device after an assembly preprocessing operation is performed on at least one component of the crystal growth device, wherein the at least one component of the crystal growth device includes a crucible, the assembly preprocessing operation includes at least one of a coating operation, an acid soaking and cleaning operation, or an impurity cleaning operation; introducing a protective gas into the crystal growth device after sealing the crystal growth device; activating the crystal growth apparatus to execute the crystal growth; and adding reactant supplements into the crystal growth device in real-time during the crystal growth.

公开(公告)号：US20230142194A1

公开(公告)日：2023-05-11

申请号：US17964303

申请日：2022-10-12

Applicant: GlobalWafers Co., Ltd.

Inventor： Richard Joseph Phillips ,  Carissima Marie Hudson

IPC: C30B15/02 ,  C30B15/12 ,  C30B15/00 ,  C30B29/06

CPC classification number: C30B15/02 ,  C30B15/12 ,  C30B15/002 ,  C30B29/06

Abstract: Methods for producing single crystal silicon ingots in which an array of quartz particles are added to the crucible assembly before ingot growth are disclosed. The array may be disposed in the outer melt zone of the crucible assembly as in a continuous Czochralski (CCz) process. The array may be made of quartz particles that are interconnected by linking members.

公开(公告)号：US20180320287A1

公开(公告)日：2018-11-08

申请号：US15587008

申请日：2017-05-04

Applicant: Corner Star Limited

Inventor： Salvador Zepeda ,  Richard J. Phillips ,  Christopher Vaughn Luers

IPC: C30B15/12 ,  C30B15/02 ,  C30B29/06

CPC classification number: C30B15/12 ,  C30B15/002 ,  C30B15/02 ,  C30B29/06

Abstract: A system for forming an ingot from a melt includes a first crucible defining a cavity for receiving the melt and a second crucible in the cavity. The second crucible separates an outer zone from an inner zone. The second crucible includes a passageway therethrough to allow the melt located within the outer zone to move into the inner zone. The inner zone defines a growth area for the ingot. The system also includes a barrier located within the outer zone to limit movement of the melt through the outer zone. The barrier includes members that are arranged to define a labyrinth for melt flow.

公开(公告)号：US20180100246A1

公开(公告)日：2018-04-12

申请号：US15837963

申请日：2017-12-11

Applicant: Corner Star Limited

Inventor： David L. Bender

IPC: C30B15/12 ,  C30B15/14 ,  C30B15/22 ,  C30B15/02 ,  C30B15/10 ,  C30B15/00 ,  C30B29/06 ,  C30B15/04

CPC classification number: C30B15/12 ,  C30B15/002 ,  C30B15/02 ,  C30B15/04 ,  C30B15/10 ,  C30B15/14 ,  C30B15/22 ,  C30B29/06 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1024 ,  Y10T117/1032 ,  Y10T117/1052 ,  Y10T117/1056 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/108 ,  Y10T117/1088 ,  Y10T117/1092

Abstract: An improved system based on the Czochralski process for continuous growth of a single crystal ingot comprises a low aspect ratio, large diameter, and substantially flat crucible, including an optional weir surrounding the crystal. The low aspect ratio crucible substantially eliminates convection currents and reduces oxygen content in a finished single crystal silicon ingot. A separate level controlled silicon pre-melting chamber provides a continuous source of molten silicon to the growth crucible advantageously eliminating the need for vertical travel and a crucible raising system during the crystal pulling process. A plurality of heaters beneath the crucible establish corresponding thermal zones across the melt. Thermal output of the heaters is individually controlled for providing an optimal thermal distribution across the melt and at the crystal/melt interface for improved crystal growth. Multiple crystal pulling chambers are provided for continuous processing and high throughput.

公开(公告)号：US20170247809A1

公开(公告)日：2017-08-31

申请号：US15053870

申请日：2016-02-25

Applicant: SunEdison, Inc.

Inventor： Stephan Haringer ,  Gianni Dell'Amico ,  Giancarlo Zago ,  Renzo Odorizzi ,  Giorgio Agostini ,  Marco Zardoni

IPC: C30B15/04 ,  C30B29/06 ,  C30B15/14 ,  C30B15/20 ,  C30B15/00 ,  C30B15/12

CPC classification number: C30B15/04 ,  C30B15/002 ,  C30B15/02 ,  C30B15/12 ,  C30B15/14 ,  C30B15/20 ,  C30B29/06

Abstract: A system for growing silicon crystal structures includes a housing defining a growth chamber and a feed system connected to the housing for delivering silicon particles to the growth chamber. The feed system includes a container for holding the silicon particles. The container includes an outlet for discharging the silicon particles. The feed system also includes a channel connected to the outlet such that silicon particles discharged from the container flow through the channel. The feed system further includes a separation valve connected to the channel and to the housing. The separation valve is configured such that a portion of the feed system rotates relative to the housing.

公开(公告)号：US09670593B2

公开(公告)日：2017-06-06

申请号：US13329368

申请日：2011-12-19

Applicant: Hideo Kato ,  Satoko Yoshimura ,  Takeshi Ninomiya

Inventor： Hideo Kato ,  Satoko Yoshimura ,  Takeshi Ninomiya

IPC: C30B15/02 ,  C30B29/06 ,  C30B11/00 ,  C30B15/00

CPC classification number: C30B29/06 ,  C30B11/001 ,  C30B15/002 ,  C30B15/02 ,  Y10T117/1056

Abstract: A method for recharging raw material polycrystalline silicon which enables large chunks of polycrystalline silicon to be recharged to a CZ ingot growth process while preventing the CZ crucible from being damaged and restricting a decline of the dislocation free rate and the quality of the grown ingot. Polycrystalline silicon chunks are recharged by first forming cushioning layer silicon of smaller chunks. The cushioning layer of polycrystalline silicon chunks are deposited on a surface of the residual silicon melt in a crucible. Subsequently, large-sized polycrystalline silicon chunks are introduced onto the cushioning layer, the cushioning layer cushioning the impact due to dropping of the large-sized polycrystalline silicon chunks.