公开(公告)号：US12116691B2

公开(公告)日：2024-10-15

申请号：US18376281

申请日：2023-10-03

Applicant: SUMCO CORPORATION

Inventor： Yasufumi Kawakami ,  Koichi Maegawa

IPC: C30B15/20 ,  C30B15/04 ,  C30B29/06

CPC classification number: C30B15/04 ,  C30B15/20 ,  C30B29/06

Abstract: A production method of monocrystalline silicon includes: growing the monocrystalline silicon having a straight-body diameter in a range from 301 mm to 330 mm that is pulled up through a Czochralski process from a silicon melt including a dopant in a form of arsenic; controlling a resistivity of the monocrystalline silicon at the straight-body start point to fall within a range from 2.50 mΩcm to 2.90 mΩcm; and subsequently sequentially decreasing the resistivity of the monocrystalline silicon to fall within a range from 1.6 mΩcm to 2.0 mΩcm at a part of the monocrystalline silicon.

公开(公告)号：US12090685B2

公开(公告)日：2024-09-17

申请号：US17780162

申请日：2020-05-08

Applicant: SK Siltron Co., LTD.

Inventor： Young Il Jin

IPC: C30B15/20 ,  B28D5/04 ,  C30B15/14

CPC classification number: B28D5/045 ,  C30B15/14 ,  C30B15/20

Abstract: Provided is a wire sawing device comprising an ingot temperature controller, the wire sawing device comprising: a chamber; an ingot clamp supporting an ingot inside the chamber; a first roller and a second roller; a wire which is wound around the first roller and the second roller and cuts the ingot into a plurality of wafers by rotating; a temperature measuring unit which is mounted inside the chamber, in which the ingot is cut, and measures the temperature of the ingot; and a heater unit mounted inside the chamber.

公开(公告)号：US12054848B2

公开(公告)日：2024-08-06

申请号：US17191743

申请日：2021-03-04

Applicant: MEISHAN BOYA ADVANCED MATERIALS CO., LTD.

Inventor： Yu Wang ,  Weiming Guan ,  Min Li

IPC: C30B15/00 ,  C07F5/00 ,  C30B15/14 ,  C30B15/20 ,  G01T1/202 ,  G01T3/06

CPC classification number: C30B15/002 ,  C07F5/003 ,  C30B15/14 ,  C30B15/20 ,  G01T1/2023 ,  G01T3/06

Abstract: The present disclosure discloses a method for growing a crystal for detecting neutrons, gamma rays, and/or x rays. The method may include weighting reactants based on a molar ratio of the reactants according to a reaction equation (1−x−z)X2O3+SiO2+2xCeO2+zZ2O3→X2(1−x−Z)Ce2xZ2zSiO5+z/2O2↑ or (1−x−y−z)X2O3+yY2O3+SiO2+2xCeO2+zZ2O3→X2(1−x−y−z)Y2yCe2xZ2zSiO5+x/202↑; placing the reactants on which a second preprocessing operation has been performed into a crystal growth device after an assembly processing operation is performed on at least one component of the crystal growth device; introducing a flowing gas into the crystal growth device after sealing the crystal growth device; and activating the crystal growth device to grow the crystal based on the Czochralski technique.

公开(公告)号：US12018399B2

公开(公告)日：2024-06-25

申请号：US17191739

申请日：2021-03-04

Applicant: MEISHAN BOYA ADVANCED MATERIALS CO., LTD.

Inventor： Yu Wang ,  Weiming Guan ,  Min Li

IPC: C30B15/00 ,  C07F5/00 ,  C30B15/14 ,  C30B15/20 ,  G01T1/202 ,  G01T3/06

CPC classification number: C30B15/002 ,  C07F5/003 ,  C30B15/14 ,  C30B15/20 ,  G01T1/2023 ,  G01T3/06

Abstract: The present disclosure discloses a method for growing a crystal for detecting neutrons, gamma rays, and/or x rays. The method may include weighting reactants based on a molar ratio of the reactants according to a reaction equation (1-x-z)x2O3+SiO2+2xCeO2+zZ2O3→X2(1-x-Z)Ce2xZ2zSiO5+x/2 O2↑ or (1-x-y-z)X2O3+yY2O3+SiO2+2xCeO2+zZ2O3→X2(1-x-y-z)Y2yCe2xZ2zSiO5+x/2 O2↑; placing the reactants on which a second preprocessing operation has been performed into a crystal growth device after an assembly processing operation is performed on at least one component of the crystal growth device; introducing a flowing gas into the crystal growth device after sealing the crystal growth device; and activating the crystal growth device to grow the crystal based on the Czochralski technique.

公开(公告)号：US20240183061A1

公开(公告)日：2024-06-06

申请号：US18519129

申请日：2023-11-27

Applicant: CRYTUR, spol. s r.o. ,  Fyzikalni ustav AV CR, v.v.i.

Inventor： Karel BLAZEK ,  Martin NIKL ,  Jan TOUS ,  Karel BARTOS ,  Jan POLAK ,  Tomáš MAREK

IPC: C30B15/04 ,  C01F17/34 ,  C09K11/77 ,  C30B15/20 ,  C30B29/24 ,  C30B33/02 ,  G01T1/202

CPC classification number: C30B15/04 ,  C01F17/34 ,  C09K11/7774 ,  C30B15/20 ,  C30B29/24 ,  C30B33/02 ,  G01T1/2023 ,  C01P2002/52 ,  C01P2006/60

Abstract: The invention relates to a method of producing a crystal from a material with the general composition of CexGdyY1−x−yAlO3 known to the professional public for scintillation crystal detectors, which has not yet been industrially produced by the Czochralski method. The invented method makes it possible to produce crystals with a diameter larger than units of mm. In particular, the invention adds to the initial Czochralski method the steps of annealing the input raw materials as well as the controlled flow of a reducing hydrogen-argon atmosphere through a crystal growth furnace.

公开(公告)号：US20240125002A1

公开(公告)日：2024-04-18

申请号：US18546046

申请日：2022-06-17

Applicant: HANWHA SOLUTIONS CORPORATION

Inventor： Jin Sung PARK ,  Keun Ho KIM ,  Young Min LEE ,  Han Woong JEON

IPC: C30B15/02 ,  C30B15/20 ,  C30B29/06

CPC classification number: C30B15/02 ,  C30B15/20 ,  C30B29/06

Abstract: Disclosed is a method for controlling the supply of solid silicon to a preliminary crucible of an ingot growth apparatus for maintaining a constant amount of molten silicon in the preliminary crucible by measuring the height of the molten silicon in the preliminary crucible. The method for controlling the supply of solid silicon to a preliminary crucible of an ingot growth apparatus, according to the present invention, is a method for controlling the supply of solid silicon to the preliminary crucible for supplying molten silicon to a main crucible of the ingot growth apparatus, the method comprising: a management range setting step of setting an appropriate management range of the molten silicon in the preliminary crucible; a height measuring step of measuring the height of the molten silicon contained in the preliminary crucible to confirm whether the molten silicon falls within an appropriate management range of the molten silicon; a supply amount determining step of determining a supply amount of solid silicon to be supplied to the preliminary crucible according to the height measured in the height measuring step; and a step of supplying a predetermined supply amount of solid silicon determined according to the supply amount determining step to the preliminary crucible.

公开(公告)号：US11932962B2

公开(公告)日：2024-03-19

申请号：US17658049

申请日：2022-04-05

Applicant: GlobalWafers Co., Ltd.

Inventor： JaeWoo Ryu ,  JunHwan Ji ,  WooJin Yoon ,  Richard J. Phillips ,  Carissima Marie Hudson

IPC: C30B15/10 ,  C30B15/20 ,  C30B15/30 ,  C30B29/06 ,  C30B30/04

CPC classification number: C30B15/10 ,  C30B15/20 ,  C30B15/30 ,  C30B29/06 ,  C30B30/04

Abstract: A method for producing a silicon ingot by the horizontal magnetic field Czochralski method includes rotating a crucible containing a silicon melt, applying a horizontal magnetic field to the crucible, contacting the silicon melt with a seed crystal, and withdrawing the seed crystal from the silicon melt while rotating the crucible to form a silicon ingot. The crucible has a wettable surface with a cristobalite layer formed thereon.

公开(公告)号：US20240068123A1

公开(公告)日：2024-02-29

申请号：US17897685

申请日：2022-08-29

Applicant: GlobalWafers Co., Ltd.

Inventor： JaeWoo Ryu ,  Carissima Marie Hudson ,  JunHwan Ji ,  WooJin Yoon

IPC: C30B15/30 ,  C30B15/20 ,  C30B29/06

CPC classification number: C30B15/30 ,  C30B15/20 ,  C30B29/06

Abstract: Methods for producing a silicon ingot in which a horizontal magnetic field is generated are disclosed. The magnet position is controlled in at least two stages of ingot growth. The magnetic poles may be at a first position during the first stage of ingot growth and lowered to a second position in a second stage of ingot growth. By controlling the magnet position, the crystal-melt interface shape may be relatively more consistent.

公开(公告)号：US20240026564A1

公开(公告)日：2024-01-25

申请号：US18376281

申请日：2023-10-03

Applicant: SUMCO CORPORATION

Inventor： Yasufumi KAWAKAMI ,  Koichi MAEGAWA

IPC: C30B15/04 ,  C30B15/20 ,  C30B29/06

CPC classification number: C30B15/04 ,  C30B15/20 ,  C30B29/06

Abstract: A production method of monocrystalline silicon includes: growing the monocrystalline silicon having a straight-body diameter in a range from 301 mm to 330 mm that is pulled up through a Czochralski process from a silicon melt including a dopant in a form of arsenic; controlling a resistivity of the monocrystalline silicon at the straight-body start point to fall within a range from 2.50 mΩcm to 2.90 mΩcm; and subsequently sequentially decreasing the resistivity of the monocrystalline silicon to fall within a range from 1.6 mΩcm to 2.0 mΩcm at a part of the monocrystalline silicon.

公开(公告)号：US20240003047A1

公开(公告)日：2024-01-04

申请号：US18037116

申请日：2020-12-22

Applicant: SK SILTRON CO., LTD.

Inventor： Woo Tae KIM

IPC: C30B15/20 ,  C30B29/06 ,  C30B15/02 ,  C30B15/14 ,  C30B15/30

CPC classification number: C30B15/20 ,  C30B29/06 ,  C30B15/02 ,  C30B15/14 ,  C30B15/30

Abstract: An embodiment provides a method for growing silicon single crystal ingots, comprising the steps of: (a) injecting polysilicon into a crucible inside a chamber; (b) melting the polysilicon in the crucible to form a silicon melt; (c) measuring the degree of melting of the polysilicon; and (d) increasing, after a predetermined part of the polysilicon has been melted, the supply amount of an inert gas supplied to the chamber, and decreasing the pressure inside the chamber.