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公开(公告)号：US20240263342A1
公开(公告)日：2024-08-08
申请号：US18290167
申请日：2022-02-28
CPC分类号： C30B15/10 , C30B15/002 , C30B15/20
摘要： The present invention is an apparatus for manufacturing a single crystal by growing a single crystal according to a Czochralski method, the apparatus includes a main chamber configured to house a crucible configured to accommodate a raw-material melt and a heater configured to heat the raw-material melt, a pulling chamber being continuously provided at an upper portion of the main chamber and configured to accommodate a single crystal grown and pulled, and a cooling cylinder extends from at least a ceiling portion of the main chamber toward a surface of the raw material melt to surround the single crystal being pulled. The cooling cylinder is configured to be forcibly cooled with a coolant. The apparatus includes a first auxiliary cooling cylinder fitted inside of the cooling cylinder, and a second auxiliary cooling cylinder threadedly connected to the outside of the first auxiliary cooling cylinder from a side of a lower end. A gap between a bottom surface of the cooling cylinder and a top surface of the second auxiliary cooling cylinder is 0 mm or more to 1.0 mm or less. This provides an apparatus for manufacturing a single crystal which can increase growth rate of the single crystal by efficiently cooling the single crystal being grown.
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公开(公告)号：US20240247397A1
公开(公告)日：2024-07-25
申请号：US18040128
申请日：2022-11-25
发明人： Zhenyu LIU , Jian XU , Zilong ZHAO , Long XIANG , Jianping WANG , Jianping GAO
摘要： An anti-cracking suction device for Czochralski single crystal is provided, wherein the device includes an outer cylinder, an inner cylinder disposed in the outer cylinder, a suction tube, and a first gap. An upper portion of the suction tube extends into the inner cylinder from a bottom of the outer cylinder, a lower portion of the suction tube is disposed outside the outer cylinder. The first gap is disposed between a bottom of the inner cylinder and the outer cylinder, and is configured to cushion a thermal expansion of the bottom of the inner cylinder to reduce stress at where the suction tube is connected with the inner cylinder, in a case that silicon liquid is sucked into the inner cylinder by the suction tube and accumulated at the bottom of the inner cylinder.
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公开(公告)号：US20240167189A1
公开(公告)日：2024-05-23
申请号：US18283210
申请日：2022-02-18
发明人： Xin DING
摘要： A molten silicon feeder for continuous czochralski single crystals includes an open crucible having a top opening located at the top and an injection port located in the lower part, the open crucible receiving and accommodating a solid silicon raw material; a heater for heating the open crucible, so that the solid silicon therein is melted, and injected below through the injection port at the bottom of the open crucible; a shell for enclosing and vacuum-sealing the overall structure of the molten silicon feeder.
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公开(公告)号：US11987899B2
公开(公告)日：2024-05-21
申请号：US17096516
申请日：2020-11-12
发明人： Maria Porrini , Sergio Morelli , Mauro Diodá
CPC分类号： C30B15/10 , C30B15/007 , C30B15/14 , C30B15/20 , C30B15/36
摘要： Methods for preparing an ingot in an ingot puller apparatus are disclosed. Thermal simulations are performed with the length of the ingot puller apparatus side heater being varied in the thermal simulations. A side heater is selected based on the thermal simulations. An ingot puller apparatus having the selected side heater length is provided. A seed crystal is lowered into a melt within a crucible of the ingot puller apparatus and an ingot is withdrawn from the melt.
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公开(公告)号：US11629985B2
公开(公告)日：2023-04-18
申请号：US16912885
申请日：2020-06-26
发明人： Hao Pan , Hyunguk Jeon
摘要： The present disclosure provides a method for regulating an inert gas flow in a crystal pulling furnace, a method for preparing monocrystalline silicon, and monocrystalline silicon. The method for regulating an inert gas flow includes introducing the inert gas into a main furnace chamber of the crystal pulling furnace from an auxiliary furnace chamber of the crystal pulling furnace, and regulating a flow direction of the inert gas flow introduced into the auxiliary furnace chamber of the crystal pulling furnace.
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公开(公告)号：US11578423B2
公开(公告)日：2023-02-14
申请号：US16617073
申请日：2018-07-03
发明人： Hongming Tang , Linjian Fu , Liming Liu , Saibo Liu
摘要： A magnet coil for magnetic Czochralski single crystal growth includes: a first coil, a second coil, and an auxiliary coil arranged between the first coil and the second coil. A distance between the first coil and a first edge of the auxiliary coil close to the first coil is equal to a distance between the second coil and a second edge of the auxiliary coil close to the second coil. The auxiliary coil, the first coil and the second coil have a common central axis. When being energized, a direction of a current in the first coil is opposite to a direction of a current in the second coil, and a magnetic field generated by a current in the auxiliary coil is used for enhancing a cusp magnetic field between the first coil and the second coil.
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公开(公告)号：US11551922B2
公开(公告)日：2023-01-10
申请号：US16467273
申请日：2017-09-22
申请人： SUMCO CORPORATION
发明人： Tsuyoshi Morita
摘要： Provided are a method of polishing a silicon wafer and a method of producing a silicon wafer which can reduce the formation of step-forming microdefects on a silicon wafer. The method includes: a double-side polishing step of performing polishing on front and back surfaces of a silicon wafer; a notch portion polishing step of performing polishing on a beveled portion of a notch portion of the silicon wafer after the double-side polishing step; a peripheral beveled portion polishing step of performing polishing on the beveled portion on the periphery of the silicon wafer other than the beveled portion of the notch portion after the notch portion polishing step; and a finish polishing step of performing finish polishing on the front surface of the silicon wafer after the peripheral beveled portion polishing step. The notch portion polishing step is performed in a state where the front surface is wet with water.
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公开(公告)号：US20220228292A1
公开(公告)日：2022-07-21
申请号：US17711666
申请日：2022-04-01
摘要： Methods for forming a unitized crucible assembly for holding a melt of silicon for forming a silicon ingot are disclosed. In some embodiments, the methods involve a porous crucible mold having a channel network with a bottom channel, an outer sidewall channel that extends from the bottom channel, and a central weir channel that extends from the bottom channel. A slip slurry may be added to the channel network and the liquid carrier of the slip slurry may be drawn into the mold. The resulting green body may be sintered to form the crucible assembly.
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公开(公告)号：US20220205129A1
公开(公告)日：2022-06-30
申请号：US17553031
申请日：2021-12-16
摘要： Methods for producing single crystal silicon ingots by Continuous Czochralski (CCz) are disclosed. A batch of buffer members (e.g., quartz cullets) is added to an outer melt zone of the crucible assembly before the main body of the ingot is grown. In some embodiments, the ratio of the mass M of the batch of buffer members added to the melt to the time between adding the batch of buffer members to the melt and when the ingot main body begins to grow is controlled such that the ratio of M/T is greater than a threshold M/T.
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公开(公告)号：US20220145494A1
公开(公告)日：2022-05-12
申请号：US17610508
申请日：2020-05-12
发明人： Alison GREENLEE , Jesse S. APPEL , Nathan STODDARD
摘要： A system for producing a ribbon from a melt includes a crucible to contain a melt and a cold block. The cold block has a surface that directly faces an exposed surface of the melt. A ribbon is formed on the melt using the cold block. A furnace is operatively connected to the crucible. The ribbon passes through the furnace after removal from the melt. The furnace includes at least one gas jet. The gas jet can dope the ribbon, form a diffusion barrier on the ribbon, and/or passivate the ribbon. Part of the ribbon passes through the furnace while part of the ribbon is being formed in the crucible using the cold block.
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