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公开(公告)号：US11443978B2
公开(公告)日：2022-09-13
申请号：US17024879
申请日：2020-09-18
发明人： Gaurab Samanta , Salvador Zepeda
IPC分类号： H01L21/762
摘要： A method for preparing semiconductor on insulator structures comprises transferring a thin layer of silicon from a donor substrate onto a handle substrate.
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公开(公告)号：US20220145491A1
公开(公告)日：2022-05-12
申请号：US17152993
申请日：2021-01-20
摘要： Methods for forming a single crystal silicon ingot with reduced crucible erosion are disclosed. Solid-phase quartz is added to the melt to reduce erosion at the crucible-melt surface interface. The quartz may be synthetic quartz such as synthetic quartz rods. The quartz may be disposed near the crucible-melt surface interface. Quartz dissolves and suppresses the amount of quartz that dissolves from the crucible at the crucible-melt surface interface.
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公开(公告)号：US11326271B2
公开(公告)日：2022-05-10
申请号：US16796522
申请日：2020-02-20
IPC分类号： C30B15/10 , C30B29/06 , C04B38/00 , C30B15/00 , C30B35/00 , B28B1/26 , C30B29/00 , C30B15/12 , B28B1/00 , B28B1/20 , C04B35/00
摘要： Methods for forming a unitized crucible assembly for holding a melt of silicon for forming a silicon ingot are disclosed. In some embodiments, the methods involve a porous crucible mold having a channel network with a bottom channel, an outer sidewall channel that extends from the bottom channel, and a central weir channel that extends from the bottom channel. A slip slurry may be added to the channel network and the liquid carrier of the slip slurry may be drawn into the mold. The resulting green body may be sintered to form the crucible assembly.
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公开(公告)号：US20220228292A1
公开(公告)日：2022-07-21
申请号：US17711666
申请日：2022-04-01
摘要： Methods for forming a unitized crucible assembly for holding a melt of silicon for forming a silicon ingot are disclosed. In some embodiments, the methods involve a porous crucible mold having a channel network with a bottom channel, an outer sidewall channel that extends from the bottom channel, and a central weir channel that extends from the bottom channel. A slip slurry may be added to the channel network and the liquid carrier of the slip slurry may be drawn into the mold. The resulting green body may be sintered to form the crucible assembly.
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公开(公告)号：US20220127748A1
公开(公告)日：2022-04-28
申请号：US17571348
申请日：2022-01-07
摘要： Methods for forming a unitized crucible assembly for holding a melt of silicon for forming a silicon ingot are disclosed. In some embodiments, the methods involve a porous crucible mold having a channel network with a bottom channel, an outer sidewall channel that extends from the bottom channel, and a central weir channel that extends from the bottom channel. A slip slurry may be added to the channel network and the liquid carrier of the slip slurry may be drawn into the mold. The resulting green body may be sintered to form the crucible assembly.
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公开(公告)号：US12084787B2
公开(公告)日：2024-09-10
申请号：US18179633
申请日：2023-03-07
IPC分类号： C30B15/00 , B22C9/00 , B28B1/00 , B28B1/26 , B28B7/00 , B28B7/16 , C04B35/00 , C04B38/00 , C30B15/10 , C30B15/12 , C30B29/06 , C30B35/00
CPC分类号： C30B15/10 , B22C9/00 , B28B1/261 , B28B7/16 , C04B38/00 , C30B15/002 , C30B15/12 , C30B29/06 , C30B35/002 , C04B2235/3418 , C04B2235/6027 , C04B2235/606 , C04B2235/656
摘要： Methods for forming a unitized crucible assembly for holding a melt of silicon for forming a silicon ingot are disclosed. In some embodiments, the methods involve a porous crucible mold having a channel network with a bottom channel, an outer sidewall channel that extends from the bottom channel, and a central weir channel that extends from the bottom channel. A slip slurry may be added to the channel network and the liquid carrier of the slip slurry may be drawn into the mold. The resulting green body may be sintered to form the crucible assembly.
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公开(公告)号：US10818540B2
公开(公告)日：2020-10-27
申请号：US16420637
申请日：2019-05-23
发明人： Gaurab Samanta , Salvador Zepeda
IPC分类号： H01L21/76 , H01L21/762
摘要： A method for preparing semiconductor on insulator structures comprises transferring a thin layer of silicon from a donor substrate onto a handle substrate.
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公开(公告)号：US12110609B2
公开(公告)日：2024-10-08
申请号：US17152993
申请日：2021-01-20
摘要： Methods for forming a single crystal silicon ingot with reduced crucible erosion are disclosed. Solid-phase quartz is added to the melt to reduce erosion at the crucible-melt surface interface. The quartz may be synthetic quartz such as synthetic quartz rods. The quartz may be disposed near the crucible-melt surface interface. Quartz dissolves and suppresses the amount of quartz that dissolves from the crucible at the crucible-melt surface interface.
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公开(公告)号：US12071705B2
公开(公告)日：2024-08-27
申请号：US17711666
申请日：2022-04-01
IPC分类号： C30B15/00 , B22C9/00 , B28B1/00 , B28B1/26 , B28B7/00 , B28B7/16 , C04B35/00 , C04B38/00 , C30B15/10 , C30B15/12 , C30B29/06 , C30B35/00
CPC分类号： C30B15/10 , B22C9/00 , B28B1/261 , B28B7/16 , C04B38/00 , C30B15/002 , C30B15/12 , C30B29/06 , C30B35/002 , C04B2235/3418 , C04B2235/6027 , C04B2235/606 , C04B2235/656
摘要： Methods for forming a unitized crucible assembly for holding a melt of silicon for forming a silicon ingot are disclosed. In some embodiments, the methods involve a porous crucible mold having a channel network with a bottom channel, an outer sidewall channel that extends from the bottom channel, and a central weir channel that extends from the bottom channel. A slip slurry may be added to the channel network and the liquid carrier of the slip slurry may be drawn into the mold. The resulting green body may be sintered to form the crucible assembly.
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公开(公告)号：US20220375784A1
公开(公告)日：2022-11-24
申请号：US17880360
申请日：2022-08-03
发明人： Gaurab Samanta , Salvador Zepeda
IPC分类号： H01L21/762
摘要： A method for preparing semiconductor on insulator structures comprises transferring a thin layer of silicon from a donor substrate onto a handle substrate.
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