公开(公告)号：US12209326B2

公开(公告)日：2025-01-28

申请号：US18571398

申请日：2022-09-30

Applicant: XI'AN ESWIN MATERIAL TECHNOLOGY CO., LTD. ,  XI'AN ESWIN SILICON WAFER TECHNOLOGY CO., LTD.

Inventor： Fan Chen ,  Pengju Zhang ,  Chaochao Guo

IPC: C30B15/02 ,  C30B15/00 ,  C30B15/26 ,  C30B29/06 ,  C30B35/00

Abstract: A silicon material processing apparatus includes a feed assembly, a scanning assembly, a controller, and a loading assembly. The feed assembly is used for conveying a silicon material and includes a feeding area, a scanning area, and a loading area sequentially arranged along the conveying direction. The silicon material to be conveyed is added to the feeding assembly in the feeding area. The scanning assembly is arranged correspondingly to the scanning area and is used for collecting silicon material information of a silicon material that is located in the scanning area. The silicon material information includes one or more of a shape characteristics and a size characteristics of the silicon material. The controller is connected with the scanning assembly and is used for generating a loading strategy according to the silicon material information.

公开(公告)号：US20240392471A1

公开(公告)日：2024-11-28

申请号：US18691364

申请日：2023-05-17

Applicant: SiCrystal GmbH

Inventor： Bernhard ECKER ,  Ralf MÜLLER ,  Philipp SCHUH ,  Matthias Stockmeier

IPC: C30B23/02 ,  C30B29/36 ,  C30B33/00 ,  C30B33/12 ,  C30B35/00

Abstract: The present invention relates to a silicon carbide substrate for use as a crystal seed, comprising a monocrystalline silicon carbide disk covered with a protective oxide layer. The protective oxide layer is intended to be removed to expose an ideal, clean surface of the monocrystalline silicon carbide disk. The present invention also relates to a method of producing at least one bulk silicon carbide single-crystal by sublimation growth using the silicon carbide substrate with protective oxide layer as a seed crystal. The protective oxide layer is removed from the seed crystal surface to expose the underlying monocrystalline silicon carbide disk by a back-etching process performed in-situ in the crystal growth crucible, i.e. after the seed crystal is arranged inside the growth crucible and before the sublimation deposition on the growth surface starts.

公开(公告)号：US20240368801A1

公开(公告)日：2024-11-07

申请号：US18623268

申请日：2024-04-01

Applicant: GlobalWafers Co., Ltd.

Inventor： JunHwan Ji ,  JaeWoo Ryu ,  Carissima Marie Hudson

IPC: C30B15/04 ,  C30B29/06 ,  C30B35/00

Abstract: Methods for doping a silicon melt with doped particulate silicon are disclosed. Maximum particle size of the doped particulate silicon may be controlled based on the impact region of the doped particulate silicon on the silicon melt.

公开(公告)号：US20240344235A1

公开(公告)日：2024-10-17

申请号：US18134494

申请日：2023-04-13

Applicant: L'Air Liquide, Societe Anonyme pour l'Etude et l’Exploitation des Procedes Georges Claude

Inventor： Feng LI ,  Yumin LIU ,  Sameh HELMY ,  Peng ZHANG ,  Jean-Marc GIRARD

IPC: C30B23/00 ,  C30B29/12 ,  C30B35/00

CPC classification number: C30B23/002 ,  C30B29/12 ,  C30B35/007

Abstract: A method of conditioning MoCl5 comprises heating a container of MoCl5 to a temperature ranging from approximately 140° C. to 190° C. for a period ranging from approximately 2 hours to approximately 100 hours to produce a MoCl5-containing composition comprising approximately 10% weight to approximately 60% weight of Phase 1 MoCl5 and 90% weight to approximately 40% weight of Phase 2 MoCl5 as determined by X-ray diffraction. This MoCl5-containing composition is expected to be more thermally stable and provides stable vapor supply.

公开(公告)号：US20240337042A1

公开(公告)日：2024-10-10

申请号：US18750350

申请日：2024-06-21

Applicant: GlobalWafers Co., Ltd.

Inventor： Benjamin Michael Meyer ,  Justin Scott Kayser

IPC: C30B15/10 ,  C30B35/00

CPC classification number: C30B15/10 ,  C30B35/00 ,  C30B35/002

Abstract: Cooling jacket devices of ingot puller apparatus used to prepare silicon ingots by the Czochralski method are disclosed. The cooling jacket device may include an inner shell that forms an inner chamber through which the ingot is pulled. The cooling jacket includes an outer shell. A plurality of tubes are disposed between the inner shell and outer shell. Each tube forms a cooling fluid passageway through which cooling fluid passes.

公开(公告)号：US12104275B2

公开(公告)日：2024-10-01

申请号：US17878794

申请日：2022-08-01

Applicant: GlobalWafers Co., Ltd.

Inventor： Benjamin Michael Meyer ,  Justin Scott Kayser

IPC: C30B35/00 ,  C30B15/10

CPC classification number: C30B15/10 ,  C30B35/00 ,  C30B35/002

Abstract: Cooling jacket devices of ingot puller apparatus used to prepare silicon ingots by the Czochralski method are disclosed. The cooling jacket device may include an inner shell that forms an inner chamber through which the ingot is pulled. The cooling jacket includes an outer shell. A plurality of tubes are disposed between the inner shell and outer shell. Each tube forms a cooling fluid passageway through which cooling fluid passes.

公开(公告)号：US20240309545A1

公开(公告)日：2024-09-19

申请号：US18595130

申请日：2024-03-04

Applicant: SiCrystal GmbH

Inventor： Ralf MÜLLER ,  Bernhard Ecker ,  Philipp SCHUH ,  Matthias Stockmeier ,  Michael Vogel

IPC: C30B23/06 ,  C30B29/36 ,  C30B35/00

CPC classification number: C30B23/06 ,  C30B29/36 ,  C30B35/002

Abstract: The present invention relates to systems and methods for growing bulk semiconductor single crystals, and more specifically, for growing bulk semiconductor single crystals, such as silicon carbide, based on physical vapor transport. The sublimation system comprises a crucible (202) having a longitudinal axis (212) and a sidewall (218) extending along the longitudinal axis (212), wherein the crucible (202) comprises a fixing means for at least one seed crystal (210) and at least one source material compartment (204) for containing a source material (208); and a heating system for generating a temperature field around a circumference of the crucible (202) along the longitudinal axis (212) of the crucible (202); a thermally insulating unit (214) arranged within the source material compartment (204) at the sidewall (218) of the crucible (202).

公开(公告)号：US12076677B2

公开(公告)日：2024-09-03

申请号：US18217687

申请日：2023-07-03

Applicant: GlobalWafers Co., Ltd.

Inventor： Masami Nakanishi ,  Yu-Sheng Su ,  I-Ching Li

IPC: B01D45/16 ,  B01D53/14 ,  B01D53/46 ,  B01D53/76 ,  B04C5/185 ,  B04C9/00 ,  C30B35/00

CPC classification number: B01D45/16 ,  B01D53/145 ,  B01D53/46 ,  B01D53/76 ,  B04C5/185 ,  B04C9/00 ,  C30B35/00 ,  B01D2252/103 ,  B04C2009/005

Abstract: A method for collecting dust from a single crystal growth system includes providing dry air and oxygen into an exit pipe connecting to the single crystal growth system, blowing a first inert gas into the exit pipe to compel the dust oxide toward a dust collecting device, collecting the dust oxide by the dust collecting device; and providing a rotary pump to transport residues of the dust oxide backward. The oxygen reacts with the unstable dust for forming dust oxide. The exit pipe is used to exhaust unstable dust from the single crystal growth system.

公开(公告)号：US20240287707A1

公开(公告)日：2024-08-29

申请号：US18571926

申请日：2021-07-01

Applicant: MAX-PLANCK-GESELLSCHAFT ZUR FÖRDERUNG DER WISSENSCHAFTEN E.V.

Inventor： Alexander Everardus Maria SMINK ,  Wolfgang BRAUN ,  Johannes BOSCHKER ,  Lena Nadine MAJER

IPC: C30B35/00 ,  C30B33/02

CPC classification number: C30B35/007 ,  C30B33/02

Abstract: The invention relates to a method of preparing a surface of a bulk substrate as an epitaxial template, to an epitaxial template and to a device comprising such an epitaxial template.

公开(公告)号：US20240198468A1

公开(公告)日：2024-06-20

申请号：US18106155

申请日：2023-02-06

Applicant: Applied Materials, Inc.

Inventor： Aniketnitin PATIL ,  Raja Murali DHAMODHARAN ,  Martin Jeffrey SALINAS ,  Shu-Kwan LAU

IPC: B23Q3/10 ,  C30B25/12 ,  C30B35/00

CPC classification number: B23Q3/106 ,  C30B25/12 ,  C30B35/005

Abstract: The present disclosure relates to lift assemblies, and related methods and components, for substrate processing chambers. In one implementation, a lift assembly for disposition in relation to a substrate processing chamber includes a first motor, a first drive assembly coupled to the first motor, and a first support block coupled to the first drive assembly. The first motor is configured to linearly move the first support block using the first drive assembly. The lift assembly includes a second motor, a second drive assembly coupled to the second motor, and a second support block coupled to the second drive assembly. The second motor is configured to linearly move the second support block using the second drive assembly, and the second motor is configured to linearly move the second support block independently of the first motor linearly moving the first support block.