公开(公告)号：US20240263352A1

公开(公告)日：2024-08-08

申请号：US18568096

申请日：2022-06-10

申请人： CVD Equipment Corporation

发明人： Karlheinz Strobl ,  Emmanuel Lakios

IPC分类号： C30B35/00 ,  B01J21/06 ,  B01J21/18 ,  B01J23/52 ,  B01J23/72 ,  B01J35/45 ,  B01J37/02 ,  C30B25/00 ,  C30B29/02 ,  C30B29/06 ,  C30B29/60 ,  C30B29/62

CPC分类号： C30B35/00 ,  B01J21/06 ,  B01J21/185 ,  B01J23/52 ,  B01J23/72 ,  B01J35/45 ,  B01J37/0215 ,  C30B25/005 ,  C30B29/02 ,  C30B29/06 ,  C30B29/602 ,  C30B29/62

摘要： An internal gas heating system apparatus enables operation of a large diameter horizontal chemical vapor processing tube reactor in the manufacture of nanomaterials, such as silicon nanowires (SiNWs) or vertically aligned carbon nanotubes on at least one catalytically active substrate. Where the nanomaterials are SiNWs, they may have controlled length, dopant level incorporation, and lower and narrower diameter distribution that on average is not greater than 50% of the average catalytic Au nanoparticle size deposited on the catalytically active substrate(s) before the SiNW growth phase.

公开(公告)号：US11993822B2

公开(公告)日：2024-05-28

申请号：US16767751

申请日：2018-12-13

申请人： INSTITUTE FOR BASIC SCIENCE ,  UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)

发明人： Ruoff Rodney S. ,  Sunghwan Jin

IPC分类号： C21D1/40 ,  C21D9/46 ,  C22F1/00 ,  C22F1/14 ,  C30B35/00

CPC分类号： C21D1/40 ,  C21D9/46 ,  C22F1/002 ,  C22F1/14 ,  C30B35/00

摘要： The present invention relates to a method for manufacturing a monocrystalline metal foil and a monocrystalline metal foil manufactured thereby, the method comprising the steps of: fixing each of the ends of a polycrystalline metal foil to electrodes; and heat-treating the fixed polycrystalline metal foil to manufacture a monocrystalline metal foil.

公开(公告)号：US11906569B2

公开(公告)日：2024-02-20

申请号：US17519679

申请日：2021-11-05

申请人： SHOWA DENKO K.K.

发明人： Koichi Murata ,  Isaho Kamata ,  Hidekazu Tsuchida ,  Akira Miyasaka

IPC分类号： G01R1/06 ,  G01R31/26 ,  H01L21/66 ,  G01R1/067 ,  C30B29/36 ,  C23C16/32 ,  C23C16/52 ,  C30B25/16 ,  G01R31/265 ,  C30B35/00

CPC分类号： G01R31/2601 ,  C23C16/325 ,  C23C16/52 ,  C30B25/16 ,  C30B29/36 ,  G01R1/06783 ,  G01R31/2648 ,  G01R31/2656 ,  H01L22/20 ,  C30B35/00

摘要： A semiconductor wafer evaluation apparatus brings a contact maker (mercury liquefied at room temperature), as a Schottky electrode, into contact with a semiconductor wafer, intermittently applies a voltage from a pulse power supply, and evaluates the state (kinds, density) of point defects by an evaluation means based on the status of the electrostatic capacity of the semiconductor wafer. In this manner, the state (kinds, density) of the point defects in the plane of a large-diameter semiconductor wafer is directly evaluated using a large table.

公开(公告)号：US11795570B2

公开(公告)日：2023-10-24

申请号：US17126657

申请日：2020-12-18

申请人： JINKO SOLAR CO., LTD. ,  ZHEJIANG JINKO SOLAR CO., LTD

发明人： Ziyang Ou ,  Xiaolong Bai ,  Xinyu Zhang

IPC分类号： C30B15/14 ,  C30B35/00

CPC分类号： C30B15/14 ,  C30B35/00 ,  Y10T117/00

摘要： A single crystal furnace is provided, including a main furnace chamber; an auxiliary furnace chamber communicating with the main furnace chamber; and a material chamber provided with a charging inlet and a charging mechanism, wherein the material chamber is communicated with the main furnace chamber through the charging inlet, the charging mechanism is telescopically coupled to the charging inlet for charging materials into a crucible in the main furnace chamber. In the single crystal furnace, the material chamber is provided, so that charging operation may be performed during taking out the monocrystalline silicon rod, thereby effectively shortening the time consumed by taking out the monocrystalline silicon rod and the charging operation, and improving production efficiency.

公开(公告)号：US11791176B2

公开(公告)日：2023-10-17

申请号：US16665343

申请日：2019-10-28

申请人： Applied Materials, Inc.

发明人： Michael Honan ,  David Blahnik ,  Robert Brent Vopat ,  Jeffrey Blahnik ,  Charles Carlson

IPC分类号： H01L21/67 ,  H01L21/673 ,  F27D7/02 ,  H01L21/324 ,  C30B33/02 ,  C30B35/00

CPC分类号： H01L21/67109 ,  C30B33/02 ,  C30B35/00 ,  F27D7/02 ,  H01L21/324 ,  H01L21/67248 ,  H01L21/67323

摘要： Apparatus and methods to process one or more wafers are described. The apparatus comprises a chamber defining an upper interior region and a lower interior region. A heater assembly is on the bottom of the chamber body in the lower interior region and defines a process region. A wafer cassette assembly is inside the heater assembly and a motor is configured to move the wafer cassette assembly from the lower process region inside the heater assembly to the upper interior region.

公开(公告)号：US10066315B2

公开(公告)日：2018-09-04

申请号：US15100597

申请日：2014-11-19

申请人： SK SILTRON CO., LTD.

发明人： In Sik Bang ,  Cheol Hwan Kim

IPC分类号： C30B17/00 ,  C30B15/14 ,  C30B35/00 ,  C30B15/20 ,  C30B29/20 ,  C30B11/00

CPC分类号： C30B17/00 ,  C30B11/006 ,  C30B15/14 ,  C30B15/20 ,  C30B29/20 ,  C30B35/00 ,  Y10T117/1004 ,  Y10T117/1008

摘要： An embodiment comprises: a chamber; a crucible provided in the chamber and accommodating a molten liquid which is a raw material for single crystal growth; a crucible screen disposed on the upper end of the crucible; and a moving unit for raising or lowering the crucible screen, wherein the crucible screen and a first upper adiabatic unit are raised to control the stroke distance, thereby preventing the impossibility of a lift-off process caused by a shortage of the stroke distance and the generation of cracks in single crystals.

公开(公告)号：US10053797B2

公开(公告)日：2018-08-21

申请号：US14675220

申请日：2015-03-31

申请人： GLOBALWAFERS CO., LTD.

发明人： Lu-Chung Chuang ,  Chih-Chieh Yu ,  Wen-Chieh Lan ,  I-Ching Li ,  Wen-Ching Hsu ,  Jiunn-Yih Chyan

IPC分类号： C30B35/00 ,  C30B15/10 ,  C30B15/14 ,  C30B11/00

CPC分类号： C30B35/002 ,  C30B11/002 ,  C30B15/10 ,  C30B15/14 ,  C30B35/00 ,  Y10T117/1068 ,  Y10T117/1092

摘要： A crystal growth apparatus includes a crucible, a heating device, a thermal insulation cover, and a driving device. The crucible contains materials to be melted, wherein the heating device heats the crucible to melt the materials; the thermal insulation cover is provided upon the materials, wherein the thermal insulation cover includes a main body, which has a bottom surface facing an interior of the crucible, and a insulating member being provided at the main body; the driving device moves the thermal insulation cover towards or away from the materials, whereby, the thermal insulation cover effectively blocks heat conduction and heat convection, which prevents thermal energy from escaping out of the crucible.

公开(公告)号：US09938633B2

公开(公告)日：2018-04-10

申请号：US14240818

申请日：2012-08-31

申请人： Jean-Paul Garandet ,  Anis Jouini ,  David Pelletier

发明人： Jean-Paul Garandet ,  Anis Jouini ,  David Pelletier

IPC分类号： C30B11/00 ,  C30B29/06 ,  C30B28/06 ,  C30B33/02 ,  C30B35/00 ,  H01L31/18

CPC分类号： C30B11/003 ,  C30B11/007 ,  C30B11/008 ,  C30B28/06 ,  C30B29/06 ,  C30B33/02 ,  C30B35/00 ,  H01L31/182 ,  Y02E10/546 ,  Y02P70/521 ,  Y10T117/1092

摘要： The crystallization system includes a crucible provided with a bottom and with side walls designed to contain the material to be solidified and a device for creating a main thermal gradient inside the crucible in a perpendicular direction to the bottom of the crucible. An additional inductive heating device is arranged at the level of the side walls of the crucible facing the liquid material and without overlapping with the solid phase. This additional inductive heating device is configured to heat a part of the crystalline material located in the vicinity of the triple contact line between the liquid material, the solidified material and the crucible so that the interface between the liquid material and the solidified material forms a convex meniscus in the vicinity of the triple contact line.

公开(公告)号：US20180066377A1

公开(公告)日：2018-03-08

申请号：US15677368

申请日：2017-08-15

申请人： SUMCO CORPORATION

发明人： Mitsuaki HAYASHI ,  Wataru SUGIMURA ,  Ippei SHIMOZAKI

IPC分类号： C30B15/02 ,  C30B29/06 ,  C30B15/10

CPC分类号： C30B15/02 ,  C30B15/04 ,  C30B15/10 ,  C30B15/12 ,  C30B29/06 ,  C30B35/00 ,  Y10T117/1056

摘要： An apparatus for manufacturing a silicon single crystal is provided. The apparatus comprises a chamber (11), a quarts crucible (21) provided in the chamber so as to be rotatable and movable upward and downward and store a silicon melt, a first heater (25) for melting a silicon raw material stored in the crucible, and a pulling mechanism (32) provided in the chamber so as to be rotatable and movable upward and downward. The pulling mechanism has a lower end to which a seed crystal (S) is attached. The seed crystal is to be dipped in the silicon melt in the crucible and pulled upward for growing a silicon single crystal by a Czochralski method. The apparatus further comprises a melt supplying mechanism (50) for supplying an additional silicon melt to the silicon melt in the crucible from external of the chamber. The melt supplying mechanism includes a melt inlet pipe (51) disposed at an inclination angle θ1 of 50° to 80° with respect to the melt surface of the silicon melt and a melt generating mechanism (54) for supplying the additional silicon melt (M) to an opening part (512) of a base end of the melt inlet pipe. The melt inlet pipe has a tip end provided with an opening part (511). The opening part of the tip end has an annular surface inclined at an angle θ2 with respect to a direction orthogonal to the axis of the melt inlet pipe. The annular surface has a vertically lower side (511a) and a vertically upper side (511b). The vertically lower side is located nearer to the tip end in the axis direction than the vertically upper side.

公开(公告)号：US20170362735A1

公开(公告)日：2017-12-21

申请号：US15622427

申请日：2017-06-14

申请人： OSAKA UNIVERSITY ,  Panasonic Corporation

发明人： Yusuke MORI ,  Mamoru IMADE ,  Shinsuke KOMATSU ,  Michirou YOSHINO

IPC分类号： C30B9/12 ,  C30B29/40

CPC分类号： C30B9/12 ,  C30B29/406 ,  C30B35/00

摘要： A crystal growth apparatus includes: a raw material supplying part that mixes raw materials including a group III element metal and an alkali metal; a growing part disposed at a stage under the raw material supplying part, the growing part having a seed substrate; a tilting mechanism that tilts the raw material supplying part and the growing part; a heater that heats the raw material supplying part and the growing part; a control part that controls an operation of the tilting mechanism; and a supply port that supplies a nitrogen element-containing substance to the growing part, wherein the raw material supplying part having an opening facing to the growing part, the opening being disposed at a bottom portion and one edge portion of the raw material supplying part, and the control part controls the tilting mechanism so as to tilt the raw material supplying part toward the other edge portion on the side opposite to the one edge portion so as to prevent the raw materials from entering the opening when the raw materials are mixed, and the control part controls the tilting mechanism so as to tilt the raw material supplying part toward the one edge portion so that the raw materials drop through the opening to the growing part when the mixing of the raw materials is completed.