公开(公告)号：US20220362886A1

公开(公告)日：2022-11-17

申请号：US17878624

申请日：2022-08-01

Applicant: General Electric Company

Inventor： Todd Jay Rockstroh ,  Michael Francis Xavier Gigliotti ,  William Thomas Carter ,  David Henry Abbott ,  Rajendra Madhukar Kelkar

IPC: B23K26/342 ,  C30B29/52 ,  B33Y10/00 ,  B33Y30/00 ,  C30B11/00 ,  B22F10/20 ,  B33Y80/00 ,  B23K26/144 ,  B23K26/70 ,  B23K26/08 ,  C30B11/02 ,  C30B28/06 ,  H05B3/00 ,  H05B6/10

Abstract: A method of making a component includes: depositing a metallic powder on a workplane; directing a beam from a directed energy source to fuse the powder in a pattern corresponding to a cross-sectional layer of the component; repeating in a cycle the steps of depositing and fusing to build up the component in a layer-by layer fashion; and during the cycle of depositing and melting, using an external heat control apparatus separate from the directed energy source to maintain a predetermined temperature profile of the component, such that the resulting component has a directionally-solidified or single-crystal microstructure.

公开(公告)号：US10297702B2

公开(公告)日：2019-05-21

申请号：US15248867

申请日：2016-08-26

Applicant: Sino-American Silicon Products Inc.

Inventor： Cheng-Jui Yang ,  Huang Wei Lin ,  Yu-Min Yang ,  Kuo-Wei Chuang ,  Ming-Kung Hsiao ,  Yuan Hsiao Chang ,  Bo-Kai Wang ,  Wen-Huai Yu ,  Sung Lin Hsu ,  I-Ching Li ,  Wen-Ching Hsu

IPC: H01L31/0368 ,  C01B33/02 ,  H01L31/18 ,  C30B28/06 ,  C30B29/06 ,  C30B29/60 ,  C30B11/00

Abstract: A polycrystalline silicon column is provided. The polycrystalline silicon column includes a plurality of silicon grains grown along a crystal-growing direction. In the crystal-growing direction, the average grain size of the silicon grains and the resistivity of the polycrystalline silicon column have opposite variation in their trends, the average grain size of the silicon grains and the oxygen content of the polycrystalline silicon column have opposite variation in their trends, and the average grain size of the silicon grains and the defect area ratio of the polycrystalline silicon column have the same variation in their trends. The overall average defect area ratio of the polycrystalline silicon column is less than or equal to 2.5%.

公开(公告)号：US20180312995A1

公开(公告)日：2018-11-01

申请号：US16024927

申请日：2018-07-02

Applicant: Sino-American Silicon Products Inc.

Inventor： Yu-Min Yang ,  Cheng-Jui Yang ,  Hung-Sheng Chou ,  Wen-Huai Yu ,  Sung-Lin Hsu ,  Wen-Ching Hsu

IPC: C30B29/06 ,  C30B28/06 ,  C01B33/02 ,  H01L29/16 ,  H01L29/04

CPC classification number: C30B29/06 ,  C01B33/02 ,  C30B28/06 ,  H01L29/04 ,  H01L29/16

Abstract: The present disclosure provides a polycrystalline silicon ingot. The polycrystalline silicon ingot has a vertical direction and includes a nucleation promotion layer located at a bottom of the polycrystalline silicon ingot, and silicon grains grown along the vertical direction, wherein the silicon grains include at least three crystal directions. The coefficient of variation of grain area in a section above the nucleation promotion layer of the polycrystalline silicon ingot increases along the vertical direction.

公开(公告)号：US10087080B2

公开(公告)日：2018-10-02

申请号：US15351035

申请日：2016-11-14

Applicant: Sino-American Silicon Products Inc.

Inventor： Wen-Huai Yu ,  Cheng-Jui Yang ,  Yu-Min Yang ,  Kai-Yuan Pai ,  Wen-Chieh Lan ,  Chan-Lu Su ,  Yu-Tsung Chiang ,  Sung-Lin Hsu ,  Wen-Ching Hsu ,  Chung-Wen Lan

IPC: C30B11/14 ,  C01B33/02 ,  H01L31/18 ,  C30B11/00 ,  C30B29/06 ,  C30B28/06 ,  C01B33/021

Abstract: A method of fabricating a poly-crystalline silicon ingot includes: (a) loading a nucleation promotion layer onto a bottom of a mold; (b) providing a silicon source on the nucleation promotion layer in the mold; (c) heating the mold until the silicon source is melted into a silicon melt completely; (d) controlling at least one thermal control parameter regarding the silicon melt continually to enable the silicon melt to nucleate on the nucleation promotion layer such that a plurality of silicon grains grow in the vertical direction; (e) controlling the at least one thermal control parameter to enable the plurality of the silicon grains to continuously grow with an average grain size increasing progressively in the vertical direction until entirety of the silicon melt is solidified to obtain the poly-crystalline silicon ingot, wherein the nucleation promotion layer is loaded by spreading a plurality of mono-Si particles over the bottom of the mold.

公开(公告)号：US09878915B2

公开(公告)日：2018-01-30

申请号：US14204082

申请日：2014-03-11

Applicant: MITSUBISHI MATERIALS CORPORATION

Inventor： Yoshinobu Nakada

IPC: C01B33/00 ,  C30B11/14 ,  C01B33/02 ,  C30B28/06 ,  C30B11/02 ,  C30B29/06

CPC classification number: C01B33/02 ,  C30B11/02 ,  C30B11/14 ,  C30B28/06 ,  C30B29/06 ,  Y10T428/21

Abstract: A silicon member for a semiconductor apparatus is provided. The silicon member has an equivalent performance to one fabricated from a single-crystalline silicon even though it is fabricated from a unidirectionally solidified silicon. In addition, it can be applied for producing a relatively large-sized part. The silicon member is fabricated by sawing a columnar crystal silicon ingot obtained by growing a single-crystal from each of seed crystals by placing the seed crystals that are made of a single-crystalline silicon plate on a bottom part of a crucible and unidirectionally solidifying a molten silicon in the crucible.

公开(公告)号：US09567691B2

公开(公告)日：2017-02-14

申请号：US12487119

申请日：2009-06-18

Applicant: Peter L. Kellerman ,  Frank Sinclair ,  Frederick Carlson ,  Julian G. Blake

Inventor： Peter L. Kellerman ,  Frank Sinclair ,  Frederick Carlson ,  Julian G. Blake

IPC: C01B33/02 ,  C30B11/00 ,  C01B33/037 ,  C30B28/06 ,  C30B29/02 ,  C30B29/06 ,  C30B29/08 ,  C30B29/40 ,  C30B29/60

CPC classification number: C30B11/003 ,  C01B33/037 ,  C30B11/001 ,  C30B28/06 ,  C30B29/02 ,  C30B29/06 ,  C30B29/08 ,  C30B29/406 ,  C30B29/60

Abstract: An apparatus to purify a melt is disclosed. A first portion of a melt in a chamber is frozen in a first direction. A fraction of the first portion is melted in the first direction. A second portion of the melt remains frozen. The melt flows from the chamber and the second portion is removed from the chamber. The freezing concentrates solutes in the melt and second portion. The second portion may be a slug with a high solute concentration. This system may be incorporated into a sheet forming apparatus with other components such as, for example, pumps, filters, or particle traps.

Abstract translation: 公开了一种净化熔体的设备。 室中的熔体的第一部分在第一方向上被冷冻。 第一部分的一部分在第一方向熔化。 熔体的第二部分保持冷冻。 熔体从腔室流出，第二部分从腔室中移出。 冷冻浓缩物溶解在熔体和第二部分中。 第二部分可以是高溶质浓度的塞子。 该系统可以结合到具有其它部件例如泵，过滤器或颗粒捕集器的片材成形设备中。

公开(公告)号：US09263624B2

公开(公告)日：2016-02-16

申请号：US13643422

申请日：2011-04-05

Applicant: Sang Jin Moon ,  Won Wook So ,  Myung Hoee Koo ,  Dong Soon Park

Inventor： Sang Jin Moon ,  Won Wook So ,  Myung Hoee Koo ,  Dong Soon Park

IPC: H01L31/00 ,  H01L31/18 ,  C30B17/00 ,  C30B11/00 ,  C30B28/06 ,  C30B29/06

CPC classification number: H01L31/182 ,  C30B11/002 ,  C30B11/003 ,  C30B17/00 ,  C30B28/06 ,  C30B29/06 ,  Y02E10/546 ,  Y02P70/521

Abstract: The present invention relates to a high-output apparatus for manufacturing a polycrystal silicon ingot for a solar cell, and more particularly, to an apparatus for manufacturing a polycrystal silicon ingot by means of heating and melting raw silicon in a vacuum chamber, and then cooling the molten silicon, wherein the apparatus comprises: a plurality of crucibles arranged so as to be horizontally separated from one another within the vacuum chamber, and in each of which raw silicon is filled for manufacturing polycrystal silicon ingots; heating means provided at the outside of each of the crucibles so as to heat each crucible and melt the raw silicon filled therein; and cooling means for cooling the crucibles, so as to enable the silicon melted by the heating means to be cooled in one direction and be formed into polycrystal ingots.

Abstract translation: 本发明涉及一种用于制造太阳能电池用多晶硅锭的高输出装置，更具体地，涉及一种通过在真空室中加热和熔化原料硅然后冷却而制造多晶硅锭的装置 所述熔融硅，其中所述装置包括：多个坩埚，其布置成在所述真空室内彼此水平分离，并且其中每个所述原料硅被填充以制造多晶硅锭; 设置在每个坩埚的外侧的加热装置，以加热每个坩埚并熔化填充在其中的原料硅; 以及用于冷却坩埚的冷却装置，以使由加热装置熔化的硅在一个方向上被冷却并形成多晶锭。

公开(公告)号：US09243017B2

公开(公告)日：2016-01-26

申请号：US13649561

申请日：2012-10-11

Applicant: Morgan State University

Inventor： Kadir Aslan

IPC: C30B29/56 ,  C07H1/06 ,  C07C227/42 ,  C30B7/00 ,  C30B28/06 ,  C30B29/58

CPC classification number: C07H1/06 ,  C07B2200/13 ,  C07C227/42 ,  C30B7/005 ,  C30B28/06 ,  C30B29/58 ,  C07C229/08

Abstract: The present invention relates to methods for rapid crystallization of amino acids, drug molecules, proteins and DNA/peptides. One method for rapid crystallization of functional group-containing molecules selected from the group consisting of amino acids, drug molecules, proteins and DNA/peptides includes (A) providing at least one metal or metal oxide in particulate or thin film form to provide (a) selective nucleation sites for crystallization of the functional group-containing molecules due to interactions of their functional groups and metal surfaces or engineered metal surfaces and (b) a microwave-transparent medium to create a thermal gradient between the metal surfaces or engineered metal surfaces and a warmer solution containing functional group-containing molecules to be crystallized, and (B) conducting microwave heating to cause the functional group-containing molecules to be crystallized.

Abstract translation: 本发明涉及氨基酸，药物分子，蛋白质和DNA /肽快速结晶的方法。 选自氨基酸，药物分子，蛋白质和DNA /肽的含官能团分子的快速结晶的一种方法包括（A）提供至少一种颗粒或薄膜形式的金属或金属氧化物以提供（a ）由于其官能团和金属表面或工程金属表面的相互作用而使含官能团的分子结晶的选择性成核位点和（b）微波透明介质以在金属表面或工程金属表面之间产生热梯度，以及 含有待结晶的含有官能团的分子的较暖的溶液，（B）进行微波加热使含官能团的分子结晶。

公开(公告)号：US09222196B2

公开(公告)日：2015-12-29

申请号：US13354014

申请日：2012-01-19

Applicant: Steven L. Kimbel ,  Jihong (John) Chen ,  Richard G. Schrenker ,  Lee W. Ferry

Inventor： Steven L. Kimbel ,  Jihong (John) Chen ,  Richard G. Schrenker ,  Lee W. Ferry

IPC: C30B11/02 ,  C30B11/00 ,  C30B28/06 ,  C30B29/06

CPC classification number: C30B11/002 ,  C30B11/02 ,  C30B28/06 ,  C30B29/06 ,  Y10T117/1092

Abstract: A directional solidification furnace includes a crucible for holding molten silicon and a lid covering the crucible and forming an enclosure over the molten silicon. The crucible also includes an inlet in the lid for introducing inert gas above the molten silicon to inhibit contamination of the molten silicon.

Abstract translation: 定向凝固炉包括用于保持熔融硅的坩埚和覆盖坩埚的盖，并在熔融硅上形成外壳。 坩埚还包括在盖子中的入口，用于在熔融硅上方引入惰性气体以抑制熔融硅的污染。

公开(公告)号：US09039835B2

公开(公告)日：2015-05-26

申请号：US13386197

申请日：2010-07-19

Applicant: Sergii Beringov ,  Volodymyr Onischenko ,  Anatoly Shkulkov ,  Yuriy Cherpak ,  Sergii Pozigun ,  Stepan Marchenko ,  Bogdan Chepurnyy

Inventor： Sergii Beringov ,  Volodymyr Onischenko ,  Anatoly Shkulkov ,  Yuriy Cherpak ,  Sergii Pozigun ,  Stepan Marchenko ,  Bogdan Chepurnyy

IPC: C30B13/14 ,  C30B15/10 ,  C30B35/00 ,  C30B29/06 ,  C30B11/00 ,  C30B28/06

CPC classification number: C30B29/06 ,  C30B11/001 ,  C30B11/003 ,  C30B13/14 ,  C30B28/06 ,  Y10S117/901 ,  Y10T117/10 ,  Y10T117/1088

Abstract: An apparatus for producing multicrystalline silicon ingots by the induction method comprises an enclosure, which includes means for start-up heating of silicon and a cooled crucible enveloped by an inductor. The crucible has a movable bottom and four walls consisting of sections spaced apart by vertically extending slots, means for moving the movable bottom, and a controlled cooling compartment arranged under the cooled crucible. The inside face of the crucible defines a melting chamber of a rectangular or square cross-section. The walls of the cooled crucible extend outwards at least from the inductor toward the lowest portion of the cooled crucible to thereby expand the melting chamber, and the angle β of expanding the melting chamber is defined by the equation β=arctg[2·(k−1.35·10 3·b)/d], where d is the dimension of the smaller side of the rectangle or of the side of the square of the cross-section of the melting chamber at the inducer level, b is the dimension of the adjoining side of the cross-section of the melting chamber at the inducer level, k is an empirical coefficient, which is 1.5 to 2. The apparatus makes it possible to decrease silicon melt spills and to increase the quality of multicrystalline silicon thus produced.

Abstract translation: 用于通过感应方法生产多晶硅锭的装置包括：外壳，其包括用于启动加热硅的装置和由电感器包围的冷却的坩埚。 坩埚具有可移动的底部和四个壁，其由垂直延伸的槽间隔开的部分，用于移动可移动底部的装置和布置在冷却的坩埚下方的受控制的冷却室组成。 坩埚的内表面限定了矩形或正方形横截面的熔化室。 冷却的坩埚的壁至少从电感器向冷却坩埚的最低部分向外延伸，从而使熔化室膨胀，并且角度＆ 扩展熔化室的方法由方程＆bgr = _ arctg [2·（k-1.35·10 3·b）/ d]定义，其中d是长方形或正方形的一侧的尺寸 在熔化室处于诱导级的剖面的横截面为b，熔化室横截面的相邻侧的尺寸为导流级，k为经验系数，为1.5〜2。 可以减少硅熔体溢出并提高由此产生的多晶硅的质量。