公开(公告)号：US20230420275A1

公开(公告)日：2023-12-28

申请号：US18244041

申请日：2023-09-08

Applicant: Applied Materials, Inc.

Inventor： Michael Honan ,  David Blahnik ,  Robert Brent Vopat ,  Jeffrey Blahnik ,  Charles Carlson

IPC: H01L21/67 ,  H01L21/673 ,  F27D7/02 ,  H01L21/324 ,  C30B33/02 ,  C30B35/00

CPC classification number: H01L21/67109 ,  H01L21/67323 ,  F27D7/02 ,  H01L21/324 ,  H01L21/67248 ,  C30B33/02 ,  C30B35/00

Abstract: Apparatus and methods to process one or more wafers are described. The apparatus comprises a chamber defining an upper interior region and a lower interior region. A heater assembly is on the bottom of the chamber body in the lower interior region and defines a process region. A wafer cassette assembly is inside the heater assembly and a motor is configured to move the wafer cassette assembly from the lower process region inside the heater assembly to the upper interior region.

公开(公告)号：US12249522B2

公开(公告)日：2025-03-11

申请号：US18244041

申请日：2023-09-08

Applicant: Applied Materials, Inc.

Inventor： Michael Honan ,  David Blahnik ,  Robert Brent Vopat ,  Jeffrey Blahnik ,  Charles Carlson

IPC: H01L21/67 ,  C30B33/02 ,  C30B35/00 ,  F27D7/02 ,  H01L21/324 ,  H01L21/673

Abstract: Apparatus and methods to process one or more wafers are described. The apparatus comprises a chamber defining an upper interior region and a lower interior region. A heater assembly is on the bottom of the chamber body in the lower interior region and defines a process region. A wafer cassette assembly is inside the heater assembly and a motor is configured to move the wafer cassette assembly from the lower process region inside the heater assembly to the upper interior region.

公开(公告)号：US20230021619A1

公开(公告)日：2023-01-26

申请号：US17382041

申请日：2021-07-21

Applicant: Applied Materials, Inc.

Inventor： Jun Lu ,  Frank Sinclair ,  Shane W. Conley ,  Michael Honan

IPC: H01J37/30 ,  H01J37/317 ,  H01J37/02

Abstract: An aperture diaphragm capable of varying the size of an aperture in two dimensions is disclosed. The aperture diaphragm may be utilized in an ion implantation system, such as between the mass analyzer and the acceleration column. In this way, the aperture diaphragm may be used to control at least one parameter of the ion beam. These parameters may include angular spread in the height direction, angular spread in the width direction, beam current or cross-sectional area. Various embodiments of the aperture diaphragm are shown. In certain embodiments, the size of the aperture in the height and width directions may be independently controlled, while in other embodiments, the ratio between height and width is constant.

公开(公告)号：US11710617B2

公开(公告)日：2023-07-25

申请号：US17378327

申请日：2021-07-16

Applicant: APPLIED Materials, Inc.

Inventor： Costel Biloiu ,  Michael Honan ,  Robert B. Vopat ,  David Blahnik ,  Charles T. Carlson ,  Frank Sinclair ,  Paul Murphy

IPC: H01J23/18 ,  H01J37/30 ,  H01J37/317

CPC classification number: H01J37/3007 ,  H01J23/18 ,  H01J37/3171 ,  H01J2237/0473

Abstract: Embodiments herein are directed to a resonator for an ion implanter. In some embodiments, a resonator may include a housing, and a first coil and a second coil partially disposed within the housing. Each of the first and second coils may include a first end including an opening for receiving an ion beam, and a central section extending helically about a central axis, wherein the central axis is parallel to a beamline of the ion beam, and wherein an inner side of the central section has a flattened surface.

公开(公告)号：US11665810B2

公开(公告)日：2023-05-30

申请号：US17112576

申请日：2020-12-04

Applicant: Applied Materials, Inc.

Inventor： Frank Sinclair ,  Paul J. Murphy ,  Michael Honan ,  Charles T. Carlson

IPC: H05H7/18 ,  H01J37/317

CPC classification number: H05H7/18 ,  H01J37/3171

Abstract: Embodiments herein are directed to a linear accelerator assembly for an ion implanter. In some embodiments, the linear accelerator assembly may include a central support within a chamber, and a plurality of modules coupled to the central support, at least one module of the plurality of modules including an electrode having an aperture for receiving and delivering an ion beam along a beamline axis.

公开(公告)号：US20220183137A1

公开(公告)日：2022-06-09

申请号：US17112576

申请日：2020-12-04

Applicant: Applied Materials, Inc.

Inventor： Frank Sinclair ,  Paul J. Murphy ,  Michael Honan ,  Charles T. Carlson

IPC: H05H7/18 ,  H01J37/317

Abstract: Embodiments herein are directed to a linear accelerator assembly for an ion implanter. In some embodiments, the linear accelerator assembly may include a central support within a chamber, and a plurality of modules coupled to the central support, at least one module of the plurality of modules including an electrode having an aperture for receiving and delivering an ion beam along a beamline axis.

公开(公告)号：US20210210307A1

公开(公告)日：2021-07-08

申请号：US16734746

申请日：2020-01-06

Applicant: APPLIED Materials, Inc.

Inventor： Costel Biloiu ,  Michael Honan ,  Robert B. Vopat ,  David Blahnik ,  Charles T. Carlson ,  Frank Sinclair ,  Paul Murphy

IPC: H01J37/30 ,  H01J37/317

Abstract: Embodiments herein are directed to a resonator for an ion implanter. In some embodiments, a resonator may include a housing, and a first coil and a second coil partially disposed within the housing. Each of the first and second coils may include a first end including an opening for receiving an ion beam, and a central section extending helically about a central axis, wherein the central axis is parallel to a beamline of the ion beam, and wherein an inner side of the central section has a flattened surface.

公开(公告)号：US11791176B2

公开(公告)日：2023-10-17

申请号：US16665343

申请日：2019-10-28

Applicant: Applied Materials, Inc.

Inventor： Michael Honan ,  David Blahnik ,  Robert Brent Vopat ,  Jeffrey Blahnik ,  Charles Carlson

IPC: H01L21/67 ,  H01L21/673 ,  F27D7/02 ,  H01L21/324 ,  C30B33/02 ,  C30B35/00

CPC classification number: H01L21/67109 ,  C30B33/02 ,  C30B35/00 ,  F27D7/02 ,  H01L21/324 ,  H01L21/67248 ,  H01L21/67323

Abstract: Apparatus and methods to process one or more wafers are described. The apparatus comprises a chamber defining an upper interior region and a lower interior region. A heater assembly is on the bottom of the chamber body in the lower interior region and defines a process region. A wafer cassette assembly is inside the heater assembly and a motor is configured to move the wafer cassette assembly from the lower process region inside the heater assembly to the upper interior region.

公开(公告)号：US11574796B1

公开(公告)日：2023-02-07

申请号：US17382041

申请日：2021-07-21

Applicant: Applied Materials, Inc.

Inventor： Jun Lu ,  Frank Sinclair ,  Shane W. Conley ,  Michael Honan

IPC: H01J37/00 ,  H01J37/30 ,  H01J37/02 ,  H01J37/317

Abstract: An aperture diaphragm capable of varying the size of an aperture in two dimensions is disclosed. The aperture diaphragm may be utilized in an ion implantation system, such as between the mass analyzer and the acceleration column. In this way, the aperture diaphragm may be used to control at least one parameter of the ion beam. These parameters may include angular spread in the height direction, angular spread in the width direction, beam current or cross-sectional area. Various embodiments of the aperture diaphragm are shown. In certain embodiments, the size of the aperture in the height and width directions may be independently controlled, while in other embodiments, the ratio between height and width is constant.

公开(公告)号：US20210343500A1

公开(公告)日：2021-11-04

申请号：US17378327

申请日：2021-07-16

Applicant: APPLIED Materials, Inc.

Inventor： Costel Biloiu ,  Michael Honan ,  Robert B. Vopat ,  David Blahnik ,  Charles T. Carlson ,  Frank Sinclair ,  Paul Murphy

IPC: H01J37/30 ,  H01J37/317 ,  H01J23/213 ,  H01J23/18 ,  H01J25/02 ,  H01J25/58 ,  H01J37/32 ,  H01P7/00 ,  H01P7/08 ,  H01P7/06

Abstract: Embodiments herein are directed to a resonator for an ion implanter. In some embodiments, a resonator may include a housing, and a first coil and a second coil partially disposed within the housing. Each of the first and second coils may include a first end including an opening for receiving an ion beam, and a central section extending helically about a central axis, wherein the central axis is parallel to a beamline of the ion beam, and wherein an inner side of the central section has a flattened surface.