公开(公告)号：US20220316087A1

公开(公告)日：2022-10-06

申请号：US17634176

申请日：2020-08-09

申请人： Leading Edge Equipment Technologies, Inc.

发明人： Alison Greenlee ,  Nathan Stoddard ,  Jesse S. Appel ,  Peter Kellerman ,  Parthiv Daggolu ,  Alexander Martinez ,  Saeed Pirooz ,  Brandon Williard ,  Charles Bowen ,  Brian McMullen ,  David Morrell ,  Dawei SUN

IPC分类号： C30B15/06 ,  C30B29/06 ,  C30B29/64

摘要： A ribbon is formed such that the ribbon floats on a melt using a cold initializer facing an exposed surface of the melt. The ribbon is single crystal silicon. The ribbon is pulled from the silicon melt at a low angle off the melt surface. The ribbon is formed at a same rate as the pulling. The ribbon is separated from the melt at a wall of the crucible where a stable meniscus forms. The ribbon has a thickness between a first surface and an opposite second surface from 50 μm to 5 mm. The ribbon includes a first region extending a first depth from the first surface. The first region has a reduced oxygen concentration relative to a bulk of the ribbon.

公开(公告)号：US10655242B2

公开(公告)日：2020-05-19

申请号：US16020390

申请日：2018-06-27

申请人： SK SILTRON CO., LTD.

发明人： In Gu Kang ,  Do Won Song ,  Jung Ha Hwang

IPC分类号： C30B15/06 ,  C30B15/10 ,  C30B29/06 ,  C30B30/04 ,  C30B15/14 ,  C30B15/30

摘要： A single-crystal ingot growing method includes setting a location of an MGP (maximum gauss position) of a magnetic field such that the MGP is located above the surface of a melt, setting a difference in intensity of the magnetic field between a center point of the melt and an edge point of the melt based on the set location of the MGP, setting an intensity of the magnetic field that is applied to the melt based on the set difference in intensity of the magnetic field, and growing a single-crystal ingot based on the set location of the MGP and the set intensity of the magnetic field. The magnetic field is a horizontal magnetic field, the MGP is spaced apart from the surface of the melt by a distance ranging from +50 mm to +150 mm, and the difference in intensity of the magnetic field ranges from 420G to 500G.

公开(公告)号：US10179958B2

公开(公告)日：2019-01-15

申请号：US15455437

申请日：2017-03-10

申请人： Varian Semiconductor Equipment Associates, Inc.

发明人： Peter L. Kellerman ,  Brian D. Kernan ,  Frederick M. Carlson ,  Dawei Sun ,  David Morrell

IPC分类号： C30B15/06 ,  C30B15/20 ,  C30B15/10 ,  C30B29/06

摘要： An apparatus for forming a crystalline sheet. The apparatus may include a crystallizer comprising a first gas channel and a second gas channel, wherein the first gas channel and second gas channel extend through the crystallizer to a lower surface of the crystallizer between an upstream edge and a downstream edge. The first gas channel may be disposed closer to the downstream edge than the second gas channel. A first gas source may be coupled to the first gas channel, where the first gas source comprises helium or hydrogen, and a second gas source may be coupled to the second gas channel, where the second gas source does not contain hydrogen or helium.

公开(公告)号：US20160168748A1

公开(公告)日：2016-06-16

申请号：US14566085

申请日：2014-12-10

申请人： Varian Semiconductor Equipment Associates, Inc.

发明人： Frank Sinclair ,  Peter L. Kellerman

IPC分类号： C30B15/26 ,  C30B15/06 ,  C30B29/06 ,  C30B15/34

CPC分类号： C30B15/26 ,  C30B15/06 ,  C30B29/06 ,  G01N23/207

摘要： An apparatus to monitor thickness of a crystalline sheet grown from a melt. The apparatus may include a process chamber configured to house the melt and crystalline sheet; an x-ray source disposed on a first side of the crystalline sheet and configured to deliver a first beam of x-rays that penetrate the crystalline sheet from a first surface to a second surface opposite the first surface, at a first angle of incidence with respect to the first surface; and an x-ray detector disposed on the first side of the crystalline sheet and configured to intercept a second beam of x-rays that are generated by reflection of the first beam of x-rays from the crystalline sheet at an angle of reflection with respect to the first surface, wherein a sum of the angle of incidence and the angle of reflection satisfies the equation λ=2d sin θ.

摘要翻译： 监测从熔体生长的结晶片的厚度的装置。 设备可以包括处理室，其被配置为容纳熔体和结晶片; x射线源，其设置在所述结晶片的第一侧上，并且被配置为以与所述第一表面相对的第一表面向所述第一表面穿过所述结晶片的第一射线束以与所述第一表面相反的第二表面， 尊重第一面; 以及x射线检测器，其设置在所述结晶片的第一侧上并且被配置为截取通过以与所述晶片的相反的角度反射所述第一X射线束而产生的第二X射线束 到第一表面，其中入射角和反射角的和满足等式λ=2dsinθ。

公开(公告)号：US08083852B2

公开(公告)日：2011-12-27

申请号：US12922917

申请日：2009-03-24

申请人： Kosei Sugawara ,  Ryoji Hoshi ,  Masanori Takazawa ,  Yuuichi Miyahara ,  Atsushi Iwasaki

发明人： Kosei Sugawara ,  Ryoji Hoshi ,  Masanori Takazawa ,  Yuuichi Miyahara ,  Atsushi Iwasaki

IPC分类号： C30B15/06

CPC分类号： C30B15/20 ,  C30B15/10 ,  C30B29/06 ,  Y10T117/1068 ,  Y10T117/1072

摘要： A silicon single crystal growth method of pulling up and growing a single crystal from a melt of a silicon raw material melted in a quartz crucible based on a Czochralski method, the method comprising the steps of: applying a direct current voltage in such a manner that an outer wall of the quartz crucible acts as a positive electrode and an electrode immersed into the melt of the silicon raw material acts as a negative electrode, the immersed electrode being placed separately from a pulling member for pulling the single crystal; and growing the single crystal with the pulling member while passing an electric current through the electrode, and a pulling apparatus thereof.

摘要翻译： 一种从基于Czochralski方法在石英坩埚中熔化的硅原料的熔体中提取和生长单晶的硅单晶生长方法，该方法包括以下步骤：施加直流电压，使得 石英坩埚的外壁作为正极，并且浸入硅原料的熔体中的电极用作负极，浸没电极与用于拉出单晶的拉拔构件分开放置; 以及在使电流通过电极的同时用牵引构件生长单晶及其牵引装置。

公开(公告)号：US06908510B2

公开(公告)日：2005-06-21

申请号：US10011718

申请日：2001-12-11

申请人： Kiril A. Pandelisev

发明人： Kiril A. Pandelisev

IPC分类号： C30B11/00 ,  C30B15/06

CPC分类号： C30B11/00 ,  C30B11/001 ,  C30B11/007 ,  C30B29/12 ,  Y10S117/914

摘要： For producing ultra pure materials a first station has a porous gas distributor. A material supply supplies material to the porous gas distributor. A gas source supplies gas to the distributor and through the distributor to the material in contact with the distributor. A heater adjacent the porous gas distributor heats and melts the material as gas is passed through the material. Dopant and a treatment liquid is or solid supplied to the material. Treated material is discharged from the first station into a second station. A second porous gas distributor in the second station distributes gas through the material in the second station. A crucible receives molten material from the second station for casting, crystal growing in the crucible or for refilling other casting or crystal growth crucibles. The material and the porous gas distributor move with respect to each other. One porous gas distributor is cylindrical and is tipped. The material supply is positioned above a lower end of the cylindrical porous gas distributor, and the discharge is positioned adjacent an opposite, raised end of the distributor. The cylindrical distributor is tippable for emptying material. Multiple parallel stations discharge multiple materials into a subsequent station or crucible.

摘要翻译： 为了生产超纯材料，第一工位具有多孔气体分配器。 材料供应材料供应给多孔气体分配器。 气体源将分配器的气体通过分配器提供给与分配器接触的材料。 邻近多孔气体分配器的加热器随着气体通过材料而加热和熔化材料。 掺杂剂和处理液体是或固体供应到材料。 经处理的材料从第一站排放到第二站。 第二站中的第二多孔气体分配器通过第二站中的材料分配气体。 坩埚接收来自第二站的熔融材料用于铸造，在坩埚中生长晶体或者用于再填充其它铸造或晶体生长坩埚。 材料和多孔气体分配器相对于彼此移动。 一个多孔气体分配器是圆柱形的并且是倾斜的。 材料供应位于圆柱形多孔气体分配器的下端上方，并且排出物位于分配器的相对的升高端附近。 圆柱形分配器可用于排空材料。 多个平行站将多个材料排放到随后的站或坩埚中。

公开(公告)号：US4913199A

公开(公告)日：1990-04-03

申请号：US288855

申请日：1988-12-23

申请人： Richard Falckenberg ,  Gerhard Hoyler ,  Bernhard Freienstein ,  Josef Grabmaier

发明人： Richard Falckenberg ,  Gerhard Hoyler ,  Bernhard Freienstein ,  Josef Grabmaier

IPC分类号： H01L21/208 ,  C30B15/00 ,  C30B15/06 ,  C30B15/10 ,  C30B29/06

CPC分类号： C30B29/06 ,  C30B15/007 ,  C30B15/10 ,  Y10T117/1048

摘要： A method and device for the complete emptying of flat quartz tanks or crucibles filled with silicon melt is provided. The apparatus includes an open outlet nozzle located in a floor of the tank and a tube-shaped, rod-shaped, or channel-shaped member composed of a material that is well-wettable by silicon melt that is brought into contact with the outlet nozzle after the conclusion of the drawing process. The member is in fluid communication with a collecting vessel. The outlet nozzle is so constructed and arranged that the silicon melt adjacent at the nozzle aperture is prevented from running out during the band drawing due to the curvature pressure of its downwardly, convexly arced surface. The apparatus can be used in continuous, horizontal band-drawing of silicon for solar cells.

摘要翻译： 提供了一种用于完全排空填充硅熔体的平坦石英罐或坩埚的方法和装置。 该装置包括位于罐底部的开放式出口喷嘴和管状的棒状或通道状构件，其由可与硅熔体良好润湿的材料组成，该材料与出口喷嘴相接触 在绘图过程结束之后。 该构件与收集容器流体连通。 出口喷嘴的构造和布置使得由于其向下凸出的弧形表面的曲率压力，在带拉伸期间防止在喷嘴孔处相邻的硅熔体流出。 该装置可用于太阳能电池的硅的连续，水平带状拉伸。

公开(公告)号：US4650541A

公开(公告)日：1987-03-17

申请号：US649627

申请日：1984-09-12

申请人： Theodore F. Ciszek

发明人： Theodore F. Ciszek

IPC分类号： C30B15/06 ,  C30B29/06 ,  C30B29/64

CPC分类号： C30B15/06 ,  Y10T117/1048 ,  Y10T117/1068

摘要： Apparatus for continuously forming a silicon crystal sheet from a silicon rod in a noncrucible environment. The rod is rotated and fed toward an RF coil in an inert atmosphere so that the upper end of the rod becomes molten and the silicon sheet crystal is pulled therefrom substantially horizontally in a continuous strip. A shorting ring may be provided around the rod to limit the heating to the upper end only. Argon gas can be used to create the inert atmosphere within a suitable closed chamber. By use of this apparatus and method, a substantially defect-free silicon crystal sheet is formed that can be used for microcircuitry chips or solar cells.

摘要翻译： 用于在不可克服的环境中从硅棒连续地形成硅晶片的装置。 杆在惰性气氛中旋转并馈送到RF线圈，使得杆的上端熔融，并且硅片晶体从基本上水平地拉到连续条带中。 可以围绕杆设置短路环，以仅将加热限制到上端。 氩气可用于在合适的封闭室内产生惰性气氛。 通过使用该装置和方法，形成可用于微电路芯片或太阳能电池的基本上无缺陷的硅晶片。

公开(公告)号：US4366024A

公开(公告)日：1982-12-28

申请号：US115317

申请日：1980-01-25

申请人： Gerhard Ast ,  Josef Dietl ,  Dieter Helmreich ,  Hans-Dieter Miller ,  Erhard Sirtl

发明人： Gerhard Ast ,  Josef Dietl ,  Dieter Helmreich ,  Hans-Dieter Miller ,  Erhard Sirtl

IPC分类号： C30B15/00 ,  C30B15/02 ,  C30B15/06 ,  C30B29/06 ,  H01L31/04 ,  C30B11/02

CPC分类号： C30B15/02 ,  C30B15/06

摘要： Competitive current generation by the exploitation of solar energy requires cheap solar cells. A process is described which makes it possible to manufacture from silicon a base material for solar cells of this type in an economical manner and in large quantities. This is achieved by bringing silicon from a supply container into contact with a non-elemental lubricating melt, which is immiscible with silicon but will not wet silicon and has a melting point below that of silicon, and by drawing off a silicon film, sliding on this lubricating melt, and solidifying the silicon continuously by cooling to below its' melting point.

摘要翻译： 通过开发太阳能来竞争当代，需要廉价的太阳能电池。 描述了一种能够以经济和大量的方式从硅制造这种类型的太阳能电池的基材的方法。 这是通过将来自供应容器的硅与非元素润滑熔体接触而实现的，该非元素润滑熔体与硅不混溶，但不会湿硅，熔点低于硅的熔点，并且通过拉出硅膜 这种润滑熔融，并通过冷却至低于其熔点而连续固化硅。

公开(公告)号：US4225378A

公开(公告)日：1980-09-30

申请号：US973621

申请日：1978-12-27

申请人： Lilburn H. Garrison

发明人： Lilburn H. Garrison

IPC分类号： C30B15/02 ,  C30B15/06

CPC分类号： C30B15/02 ,  C30B15/06 ,  Y10S117/90 ,  Y10T117/1048 ,  Y10T117/1064 ,  Y10T117/1068

摘要： An extrusion mold for growing crystalline silicon in any desired size at a very high purity level. The mold is formed of molybdenum with any desired width, length and depth. The major portion of its length is immersed in a temperature-controlled environment. A high temperature receiving end of the mold is located in a controlled atmosphere containing an inert gas such as nitrogen. Molten silicon is poured from a crucible into the open end of the mold in the controlled atmosphere. The extrusion mold is at an incline to permit the molten silicon to flow through the mold until it contacts a seed crystal of silicon. The seed crystal is located at the point where the silicon solidifies. The molten silicon begins to form a crystalline structure oriented according to the seed crystal. As crystallization takes place, the seed is slowly pulled out of the other end of the extrusion mold which is open to the atmosphere bringing the crystalline silicon structure with it.

摘要翻译： 用于以非常高的纯度水平生长任何所需尺寸的晶体硅的挤出模具。 模具由具有任何所需宽度，长度和深度的钼形成。 其长度的主要部分浸在温度控制的环境中。 模具的高温接收端位于含有惰性气体如氮气的受控气氛中。 将熔融硅从坩埚中注入到受控气氛中的模具的开口端。 挤出模具倾斜以允许熔融硅流过模具直到其接触硅晶种。 晶种位于硅固化点。 熔融硅开始形成根据晶种取向的晶体结构。 随着结晶的发生，将种子从挤出模具的另一端缓慢拉出，该模具向大气开放，使晶体硅结构与其结合。