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    Apparatus and method for monitoring and controlling crystal growth
    2.
    发明授权
    Apparatus and method for monitoring and controlling crystal growth 有权
    用于监测和控制晶体生长的装置和方法

    公开(公告)号：US07959732B1

    公开(公告)日：2011-06-14

    申请号：US11455400

    申请日：2006-06-19

    申请人： Jan Jozef Buzniak ,  Valery Prunier

    发明人： Jan Jozef Buzniak ,  Valery Prunier

    IPC分类号： C30B35/00

    CPC分类号： C30B35/00 ,  C30B11/006 ,  C30B15/26 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1024

    摘要： Apparatus and method for growing a crystal from a melt of a growth material, wherein crystal growth occurs at a solid-liquid interface between the melt and the crystal, and a characteristic of the solid-liquid interface is determined by using a float atop the melt and a detector for detecting displacement of the float. The characteristic of the solid-liquid interface can be at least one of the following: position, velocity or acceleration of the solid-liquid interface.

    摘要翻译： 用于从生长材料的熔体生长晶体的装置和方法，其中在熔体和晶体之间的固 - 液界面处发生晶体生长，并且通过使用熔体顶部的浮子来确定固 - 液界面的特性 以及用于检测浮子的位移的检测器。 固 - 液界面的特性可以是以下至少一个：固 - 液界面的位置，速度或加速度。

    CRUCIBLE AND METHOD FOR PULLING A SINGLE CRYSTAL
    4.
    发明申请
    CRUCIBLE AND METHOD FOR PULLING A SINGLE CRYSTAL 有权
    用于拉伸单晶的可塑性和方法

    公开(公告)号：US20100180815A1

    公开(公告)日：2010-07-22

    申请号：US12692456

    申请日：2010-01-22

    申请人： Masaru Sato ,  Masaki Morikawa

    发明人： Masaru Sato ,  Masaki Morikawa

    IPC分类号： C30B15/12 ,  C30B15/10

    CPC分类号： C30B15/10 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1032 ,  Y10T117/1052

    摘要： A crucible for pulling a silicon single crystal has a double structure comprising a silica crucible and a graphite crucible covering an outside of the silica crucible, wherein the silica crucible is provided at its opening end portion with an inward falling prevention means for imparting a radially outward force to a body portion of the silica crucible.

    摘要翻译： 用于拉硅单晶的坩埚具有包括二氧化硅坩埚和覆盖在二氧化硅坩埚外部的石墨坩埚的双重结构，其中，二氧化硅坩埚在其开口端部设置有向内防止装置，用于使径向向外 对二氧化硅坩埚的主体部分的力。

    Apparatus for producing trichlorosilane
    5.
    发明申请
    Apparatus for producing trichlorosilane 有权
    三氯硅烷生产设备

    公开(公告)号：US20100055007A1

    公开(公告)日：2010-03-04

    申请号：US12312367

    申请日：2007-11-27

    申请人： Toshiyuki Ishii

    发明人： Toshiyuki Ishii

    IPC分类号： B01J19/00 ,  B01J19/08

    CPC分类号： C01B33/10763 ,  Y10S117/90 ,  Y10T117/10

    摘要： This apparatus for producing trichlorosilane includes: a vessel having a gas inlet that introduces a feed gas into the vessel and a gas outlet that discharges a reaction product gas to the outside; a plurality of silicon core rods provided inside the vessel; and a heating mechanism that heats the silicon core rods, wherein a feed gas containing silicon tetrachloride and hydrogen is reacted to produce a reaction product gas containing trichlorosilane and hydrogen chloride. The silicon core rods may be disposed so as to stand upright on the bottom of the vessel, and the heating mechanism may have electrode portions that hold the lower end portions of the silicon core rods on the bottom of the vessel and a power supply that applies an electric current to the silicon core rods through the electrode portions to heat the silicon core rods.

    摘要翻译： 该三氯硅烷的制造装置具有：将具有将进料气体导入容器的气体入口的容器和向外部排出反应产物气体的气体出口; 设置在容器内部的多个硅芯棒; 以及加热硅芯棒的加热机构，其中使含有四氯化硅和氢气的进料气体反应以产生含有三氯硅烷和氯化氢的反应产物气体。 硅芯棒可以设置成直立在容器的底部，并且加热机构可以具有将硅芯棒的下端部分保持在容器的底部上的电极部分和适用的电源 通过电极部分到硅芯棒的电流以加热硅芯棒。

    COOLING STRUCTURE FOR BODY OF CRYSTAL-GROWING FURNACE
    6.
    发明申请
    COOLING STRUCTURE FOR BODY OF CRYSTAL-GROWING FURNACE 失效
    晶体生长炉体的冷却结构

    公开(公告)号：US20090173277A1

    公开(公告)日：2009-07-09

    申请号：US12153917

    申请日：2008-05-28

    申请人： Shiow-Jeng Lew ,  Hur-Lon Lin

    发明人： Shiow-Jeng Lew ,  Hur-Lon Lin

    IPC分类号： C30B35/00

    CPC分类号： C30B35/00 ,  C30B11/003 ,  C30B29/06 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1024 ,  Y10T117/1068

    摘要： A cooling structure for the body of a crystal-growing furnace includes an upper body and a lower body. The upper body includes an outer upper shell and an inner upper shell, wherein an upper enclosing space is formed between the outer upper shell and the inner upper shell. The lower body includes an outer lower shell and an inner lower shell, wherein a lower enclosing space is formed between the outer lower shell and the inner lower shell. A plurality of water pipes are arranged, respectively, around the upper and the lower enclosing spaces, wherein plural spraying holes are provided on each of the water pipes. With the help of a pump, water from an outside water source is drawn through the spraying holes of the water pipes so as to cool down the body of the crystal-growing furnace. In adding an exhaust fan, warm air in the upper enclosing spaces can be driven out speedily. Further, in the upper and the lower enclosing spaces there are provided with emergent water pipes for showering more additional water to cool the body of the crystal-growing furnace in case of emergency such that further disaster can be avoided.

    摘要翻译： 晶体生长炉体的冷却结构包括上体和下体。 上身包括外上壳体和内上壳体，其中在外上壳体和内上壳体之间形成上封闭空间。 下体包括外下壳体和内下壳体，其中在外下壳体和内下壳体之间形成下封闭空间。 多个水管分别设置在上封闭空间和下封闭空间周围，其中在每个水管上设置有多个喷射孔。 在泵的帮助下，来自外部水源的水通过水管的喷射孔被吸入，以冷却晶体生长炉的主体。 在添加排风扇时，可以快速地将上部封闭空间中的暖风吹出。 此外，在上封闭空间和下封闭空间中，设置有紧急水管，用于在紧急情况下淋浴更多的水以冷却晶体生长炉的主体，从而可以避免进一步的灾难。

    Heat shield member and single crystal pulling device
    7.
    发明授权
    Heat shield member and single crystal pulling device 有权
    隔热构件和单晶拉拔装置

    公开(公告)号：US07491270B2

    公开(公告)日：2009-02-17

    申请号：US11577989

    申请日：2004-10-26

    申请人： Hitoshi Sasaki ,  Syunji Kuragaki

    发明人： Hitoshi Sasaki ,  Syunji Kuragaki

    IPC分类号： C30B35/00

    CPC分类号： C30B15/14 ,  C30B35/00 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1032 ,  Y10T117/1052 ,  Y10T117/1068

    摘要： A heat shielding member 20 that thermally shields the periphery of a single crystal 16 used in a Czochralski single crystal pulling device that pulls the single crystal 16 from a melt 15 that is collected in a crucible 10 is disclosed. The heat shielding member 20 is provided with an approximately cylindrical main body portion 21 arranged so as to surround the single crystal 16, with a lower end portion thereof extending to the vicinity of the melt 15, and an approximately annular bottom plate portion 22 that extends in the diameter direction from the bottom end portion of the main body portion 21 to cover the melt. The bottom plate portion 22 is attached to the main body portion 21 in the state of being severed in the circumferential direction at at least one location. With this constitution it is possible to provide a heat shielding member with superior durability and a single crystal pulling device that employs the heat shielding member.

    摘要翻译： 公开了一种热屏蔽构件20，该隔热构件20用于将从坩埚10中收集的熔体15拉出单晶16的切克拉斯基单晶拉制装置中使用的单晶16的周边。 隔热构件20设置有围绕单晶16布置的近似圆筒形的主体部分21，其下端部延伸到熔体15附近，并且大致环形的底板部分22延伸 在主体部分21的底端部的直径方向上，以覆盖熔体。 底板部分22在至少一个位置处沿周向切断的状态附接到主体部分21。 利用该结构，可以提供具有优异耐久性的隔热构件和采用该隔热构件的单晶拉制装置。