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公开(公告)号：US09550614B2
公开(公告)日：2017-01-24
申请号：US13486478
申请日：2012-06-01
Applicant: Moungi G. Bawendi , Vladimir Bulovic , Seth Coe-Sullivan , Jean-Michel Caruge , Jonathan Steckel , Jonathan E. Halpert , Alexi Arango
Inventor： Moungi G. Bawendi , Vladimir Bulovic , Seth Coe-Sullivan , Jean-Michel Caruge , Jonathan Steckel , Jonathan E. Halpert , Alexi Arango
CPC classification number: H01L33/14 , B65D71/36 , B65D81/261 , B65D2571/00141 , B65D2571/0045 , B65D2571/00574 , B65D2571/0066 , B65D2571/00728 , B82Y20/00 , B82Y30/00 , H01L27/156 , H01L33/005 , H01L33/06 , H01L33/08 , H01L33/18 , H01L33/26 , H01L33/42 , H01L51/5012 , H01L51/502 , H01L51/5048 , H01L51/5096 , H01L2933/0041
Abstract: A light emitting device includes a semiconductor nanocrystal and a charge transporting layer that includes an inorganic material. The charge transporting layer can be a hole or electron transporting layer. The inorganic material can be an inorganic semiconductor.
Abstract translation: 发光器件包括半导体纳米晶体和包含无机材料的电荷输送层。 电荷输送层可以是空穴或电子传输层。 无机材料可以是无机半导体。
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公开(公告)号：US09410959B2
公开(公告)日：2016-08-09
申请号：US13594719
申请日：2012-08-24
Applicant: Sungjee Kim , Moungi G. Bawendi
Inventor： Sungjee Kim , Moungi G. Bawendi
IPC: B32B5/16 , G01N33/58 , B82Y10/00 , B82Y15/00 , B82Y20/00 , B82Y30/00 , C09K11/88 , C30B7/00 , C30B29/60 , C30B33/00 , H01L21/02 , H01L29/06 , H01L29/165 , H01L29/205 , H01L29/225 , H01L29/267 , H01L51/42
CPC classification number: G01N33/588 , B82Y10/00 , B82Y15/00 , B82Y20/00 , B82Y30/00 , C09K11/883 , C30B7/00 , C30B29/605 , C30B33/00 , H01L21/0237 , H01L21/02409 , H01L21/02411 , H01L21/02521 , H01L21/0256 , H01L21/02562 , H01L21/02601 , H01L29/0665 , H01L29/0673 , H01L29/165 , H01L29/205 , H01L29/225 , H01L29/267 , H01L51/426 , Y02E10/549 , Y10S977/773 , Y10S977/774 , Y10S977/777 , Y10S977/811 , Y10T428/12021 , Y10T428/12528 , Y10T428/12986 , Y10T428/294 , Y10T428/2991 , Y10T428/315
Abstract: A semiconductor nanocrystal heterostructure has a core of a first semiconductor material surrounded by an overcoating of a second semiconductor material. Upon excitation, one carrier can be substantially confined to the core and the other carrier can be substantially confined to the overcoating.
Abstract translation: 半导体纳米晶体异质结构具有由第二半导体材料的外涂层包围的第一半导体材料的芯。 在激发时，一个载体可以基本上限于核心，另一个载体可以基本上局限于外涂层。
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3.发明申请DEVICE AND METHOD FOR LUMINESCENCE ENHANCEMENT BY RESONANT ENERGY TRANSFER FROM AN ABSORPTIVE THIN FILM 有权通过共振能量从吸收薄膜转移的发光增强的装置和方法公开(公告)号：US20150153493A1
公开(公告)日：2015-06-04
申请号：US14563023
申请日：2014-12-08
Applicant: Gleb M. Akselrod , Moungi G. Bawendi , Vladimir Bulovic , Jonathan R. Tischler , William A. Tisdale , Brian J. Walker
Inventor： Gleb M. Akselrod , Moungi G. Bawendi , Vladimir Bulovic , Jonathan R. Tischler , William A. Tisdale , Brian J. Walker
IPC: G02B5/28
CPC classification number: G02B5/288 , F21K2/00 , G02B5/28 , G02B5/286 , G02B5/287 , G02B2207/113 , H01L31/02322 , H01L51/447 , H01L51/5271 , H01S3/0915 , H01S3/168 , H01S3/169 , Y02E10/52 , Y02E10/549 , Y02P70/521
Abstract: Disclosed are a device and a method for the design and fabrication of the device for enhancing the brightness of luminescent molecules, nanostructures, and thin films. The device includes a mirror, a dielectric medium or spacer, an absorptive layer, and a luminescent layer. The absorptive layer is a continuous thin film of a strongly absorbing organic or inorganic material. The luminescent layer may be a continuous luminescent thin film or an arrangement of isolated luminescent species, e.g., organic or metal-organic dye molecules, semiconductor quantum dots, or other semiconductor nanostructures, supported on top of the absorptive layer.
Abstract translation: 公开了用于设计和制造用于增强发光分子，纳米结构和薄膜的亮度的装置的装置和方法。 该装置包括反射镜，电介质或间隔物，吸收层和发光层。 吸收层是强吸收有机或无机材料的连续薄膜。 发光层可以是连续的发光薄膜，或者是支撑在吸收层顶部上的隔离的发光物质，例如有机或金属 - 有机染料分子，半导体量子点或其它半导体纳米结构的排列。
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公开(公告)号：US08941299B2
公开(公告)日：2015-01-27
申请号：US11750824
申请日：2007-05-18
Applicant: Jianglong Chen , Vladimir Bulovic , Polina Anikeeva , Moungi G. Bawendi
Inventor： Jianglong Chen , Vladimir Bulovic , Polina Anikeeva , Moungi G. Bawendi
CPC classification number: C09K11/565 , H05B33/14
Abstract: A light emitting device includes an electroluminescent material and semiconductor nanocrystals. The semiconductor nanocrystals accept energy from the electroluminescent material and emit light.
Abstract translation: 发光器件包括电致发光材料和半导体纳米晶体。 半导体纳米晶体从电致发光材料接受能量并发光。
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5.发明授权Device and method for luminescence enhancement by resonant energy transfer from an absorptive thin film 有权通过从吸收性薄膜的共振能量转移来增强发光的装置和方法公开(公告)号：US08908261B2
公开(公告)日：2014-12-09
申请号：US13358750
申请日：2012-01-26
Applicant: Gleb M. Akselrod , Moungi G. Bawendi , Vladimir Bulovic , Jonathan R. Tischler , William A. Tisdale , Brian J. Walker
Inventor： Gleb M. Akselrod , Moungi G. Bawendi , Vladimir Bulovic , Jonathan R. Tischler , William A. Tisdale , Brian J. Walker
IPC: F21K2/00 , H01L51/44 , G02B5/28 , H01L31/0232 , H01S3/0915 , H01S3/16 , H01L51/52
CPC classification number: G02B5/288 , F21K2/00 , G02B5/28 , G02B5/286 , G02B5/287 , G02B2207/113 , H01L31/02322 , H01L51/447 , H01L51/5271 , H01S3/0915 , H01S3/168 , H01S3/169 , Y02E10/52 , Y02E10/549 , Y02P70/521
Abstract: Disclosed are a device and a method for the design and fabrication of the device for enhancing the brightness of luminescent molecules, nanostructures, and thin films. The device includes a mirror, a dielectric medium or spacer, an absorptive layer, and a luminescent layer. The absorptive layer is a continuous thin film of a strongly absorbing organic or inorganic material. The luminescent layer may be a continuous luminescent thin film or an arrangement of isolated luminescent species, e.g., organic or metal-organic dye molecules, semiconductor quantum dots, or other semiconductor nanostructures, supported on top of the absorptive layer.
Abstract translation: 公开了用于设计和制造用于增强发光分子，纳米结构和薄膜的亮度的装置的装置和方法。 该装置包括反射镜，电介质或间隔物，吸收层和发光层。 吸收层是强吸收有机或无机材料的连续薄膜。 发光层可以是连续的发光薄膜，或者是支撑在吸收层顶部上的隔离的发光物质，例如有机或金属 - 有机染料分子，半导体量子点或其它半导体纳米结构的排列。
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Patent Agency Ranking
公开(公告)号：US20130216707A1
公开(公告)日：2013-08-22
申请号：US11959853
申请日：2007-12-19
Applicant: Vladimir Bulovic , Seth A. Coe , Wing-Keung Woo , Moungi G. Bawendi
Inventor： Vladimir Bulovic , Seth A. Coe , Wing-Keung Woo , Moungi G. Bawendi
CPC classification number: B05D1/34 , B05D1/005 , B05D7/52 , B22F1/0018 , B22F1/02 , B82Y20/00 , B82Y30/00 , H01L51/5012 , H01L51/5048
Abstract: A composition includes a layer of nanoparticles and a layer of a second material.
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公开(公告)号：US20120280611A1
公开(公告)日：2012-11-08
申请号：US13465553
申请日：2012-05-07
Applicant: Moungi G. Bawendi , Jason Heine , Klavs F. Jensen , Jeffrey N. Miller , Ronald L. Moon
Inventor： Moungi G. Bawendi , Jason Heine , Klavs F. Jensen , Jeffrey N. Miller , Ronald L. Moon
CPC classification number: H01L33/06 , B82Y10/00 , C09K11/02 , C09K11/565 , C09K11/883 , H01L33/502 , H01L33/504 , H01S3/169 , Y02B20/181 , Y10S977/95
Abstract: A light-emitting device comprising a population of quantum dots (QDs) embedded in a host matrix and a primary light source which causes the QDs to emit secondary light and a method of making such a device. The size distribution of the QDs is chosen to allow light of a particular color to be emitted therefrom. The light emitted from the device may be of either a pure (monochromatic) color, or a mixed (polychromatic) color, and may consist solely of light emitted from the QDs themselves, or of a mixture of light emitted from the QDs and light emitted from the primary source. The QDs desirably are composed of an undoped semiconductor such as CdSe, and may optionally be overcoated to increase photoluminescence.
Abstract translation: 一种发光装置，包括嵌入在主矩阵中的量子点群（QD）和导致QD发出二次光的初级光源以及制造这种器件的方法。 选择量子点的尺寸分布以允许从其发射特定颜色的光。 从装置发射的光可以是纯（单色）或混合（多色）颜色，并且可以仅由QDs本身发出的光或者从QD发出的光的混合物和发射的光 从主要来源。 QD理想地由诸如CdSe的未掺杂的半导体组成，并且可以任选地被涂覆以增加光致发光。
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公开(公告)号：US20120094390A1
公开(公告)日：2012-04-19
申请号：US13330148
申请日：2011-12-19
Applicant: Preston T. Snee , Rebecca C. Somers , Daniel G. Nocera , Moungi G. Bawendi
Inventor： Preston T. Snee , Rebecca C. Somers , Daniel G. Nocera , Moungi G. Bawendi
CPC classification number: G01N21/6486 , G01N33/542 , Y10T436/207497
Abstract: Binding an analyte can cause a change in fluorescence emission of a sensor. The change in fluorescence can be related to the amount of analyte present. The sensor can include a semiconductor nanocrystal linked to a fluorescent moiety. Upon excitation, the fluorescent moiety can transfer energy to the semiconductor nanocrystal, or vice versa.
Abstract translation: 结合分析物会导致传感器荧光发射的变化。 荧光的变化可能与分析物的存在量有关。 传感器可以包括连接到荧光部分的半导体纳米晶体。 激发后，荧光部分可以将能量转移到半导体纳米晶体，反之亦然。
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公开(公告)号：US08134175B2
公开(公告)日：2012-03-13
申请号：US11032163
申请日：2005-01-11
Applicant: Moungi G. Bawendi , Sang-wook Kim , John P. Zimmer
Inventor： Moungi G. Bawendi , Sang-wook Kim , John P. Zimmer
IPC: H01L29/12
CPC classification number: C09K11/565 , C09K11/7492 , C09K11/883 , C30B7/14 , C30B29/40 , C30B29/60 , Y10S977/773 , Y10S977/83
Abstract: Semiconductor nanocrystals including III-V semiconductors can include a core including III-V alloy. The nanocrystal can include an overcoating including a II-VI semiconductor.teh
Abstract translation: 包括III-V半导体的半导体纳米晶体可以包括包括III-V合金的芯。 纳米晶体可以包括包含II-VI半导体的外涂层
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公开(公告)号：US08101021B2
公开(公告)日：2012-01-24
申请号：US11955774
申请日：2007-12-13
Applicant: Brian Yen , Axel Guenther , Klavs F. Jensen , Moungi G. Bawendi , Martin Schmidt
Inventor： Brian Yen , Axel Guenther , Klavs F. Jensen , Moungi G. Bawendi , Martin Schmidt
CPC classification number: B01J19/0093 , B01J2219/00783 , B01J2219/00828 , B01J2219/00831 , B01J2219/00873 , B01J2219/00889 , B01J2219/00891 , B01J2219/00984 , B82Y30/00 , C01B19/007 , C01P2002/84 , C01P2004/52 , C01P2004/64 , Y10S117/90 , Y10S977/70 , Y10T117/10 , Y10T117/1016
Abstract: A population of nanocrystals having a narrow and controllable size distribution and can be prepared by a segmented-flow method.
Abstract translation: 具有窄且可控尺寸分布的纳米晶体群，并且可以通过分段流法制备。
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