公开(公告)号：US07521282B2

公开(公告)日：2009-04-21

申请号：US11984942

申请日：2007-11-26

申请人： Tetsuya Yamamoto ,  Atsutoshi Arakawa ,  Kenji Sato ,  Toshiaki Asahi

发明人： Tetsuya Yamamoto ,  Atsutoshi Arakawa ,  Kenji Sato ,  Toshiaki Asahi

IPC分类号： H01L21/00

CPC分类号： C30B29/48 ,  C30B23/002 ,  C30B25/02 ,  H01L21/02411 ,  H01L21/0248 ,  H01L21/02554 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02568 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02623 ,  H01L21/02631 ,  H01L29/227 ,  H01L33/285

摘要： The present invention relates to a method for producing an n-type ZnTe system compound semiconductor single crystal having high carrier concentration and low resistivity, the ZnTe system compound semiconductor single crystal, and a semiconductor device produced by using the ZnTe system compound semiconductor as a base member. Concretely, a first dopant and a second dopant are co-doped into the ZnTe system compound semiconductor single crystal so that the number of atoms of the second dopant becomes smaller than the number of atoms of the first dopant, the first dopant being for controlling a conductivity type of the ZnTe system compound semiconductor to a first conductivity type, and the second dopant being for controlling the conductivity type to a second conductivity type different from the first conductivity type. By the present invention, a desired carrier concentration can be achieved with a doping amount smaller than in earlier technology, and crystallinity of the obtained crystal can be improved.

公开(公告)号：US20080090386A1

公开(公告)日：2008-04-17

申请号：US11984943

申请日：2007-11-26

申请人： Tetsuya Yamamoto ,  Atsutoshi Arakawa ,  Kenji Sato ,  Toshiaki Asahi

发明人： Tetsuya Yamamoto ,  Atsutoshi Arakawa ,  Kenji Sato ,  Toshiaki Asahi

IPC分类号： H01L21/20

CPC分类号： C30B29/48 ,  C30B23/002 ,  C30B25/02 ,  H01L21/02411 ,  H01L21/0248 ,  H01L21/02554 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02568 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02623 ,  H01L21/02631 ,  H01L29/227 ,  H01L33/285

摘要： The present invention relates to a method for producing an n-type ZnTe system compound semiconductor single crystal having high carrier concentration and low resistivity, the ZnTe system compound semiconductor single crystal, and a semiconductor device produced by using the ZnTe system compound semiconductor as a base member. Concretely, a first dopant and a second dopant are co-doped into the ZnTe system compound semiconductor single crystal so that the number of atoms of the second dopant becomes smaller than the number of atoms of the first dopant, the first dopant being for controlling a conductivity type of the ZnTe system compound semiconductor to a first conductivity type, and the second dopant being for controlling the conductivity type to a second conductivity type different from the first conductivity type. By the present invention, a desired carrier concentration can be achieved with a doping amount smaller than in earlier technology, and crystallinity of the obtained crystal can be improved.

公开(公告)号：US20070077674A1

公开(公告)日：2007-04-05

申请号：US11558115

申请日：2006-11-09

申请人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

发明人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

IPC分类号： H01L21/00

CPC分类号： H01L33/24 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02409 ,  H01L21/02411 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02642 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/32 ,  H01L2224/48137 ,  H01L2224/48139

摘要： A process for producing a semiconductor light-emitting device is provided. The process includes providing a substrate including a substrate surface oriented along a substrate surface plane, forming a crystal seed layer on the substrate surface, forming a masking layer on the crystal seed layer, wherein the masking layer includes an opening, forming a crystal layer by selective growth of the crystal seed layer through the opening of the masking layer, wherein the crystal layer includes a crystal layer surface oriented along a crystal layer plane that diagonally intersects the substrate surface, and forming each of a first conductive layer, an active layer, and a second conductive layer along at least a portion of the crystal layer surface.

摘要翻译： 提供一种制造半导体发光器件的方法。 该方法包括提供基板，其包括沿着基板表面平面取向的基板表面，在基板表面上形成晶种层，在晶种层上形成掩模层，其中掩模层包括开口，通过 通过所述掩模层的开口选择性地生长所述晶种层，其中所述晶体层包括沿着与所述衬底表面对角地相交的晶体层平面取向的晶体层表面，并且形成第一导电层，有源层， 以及沿着所述晶体层表面的至少一部分的第二导电层。

公开(公告)号：US20050167678A1

公开(公告)日：2005-08-04

申请号：US11098302

申请日：2005-03-31

申请人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

发明人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

IPC分类号： H01L21/205 ,  H01L33/00 ,  H01L33/10 ,  H01L33/16 ,  H01L33/20 ,  H01L33/24 ,  H01L33/32 ,  H01L33/38 ,  H01L29/15

CPC分类号： H01L33/24 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02409 ,  H01L21/02411 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02642 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/32 ,  H01L2224/48137 ,  H01L2224/48139

摘要： Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.

公开(公告)号：US6043141A

公开(公告)日：2000-03-28

申请号：US965391

申请日：1997-11-06

申请人： Owen K. Wu ,  Rajesh D. Rajavel

发明人： Owen K. Wu ,  Rajesh D. Rajavel

IPC分类号： C30B23/02 ,  H01L21/363 ,  H01L21/20

CPC分类号： C30B23/02 ,  C30B29/48 ,  H01L21/02381 ,  H01L21/02411 ,  H01L21/0248 ,  H01L21/02551 ,  H01L21/02562 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02631 ,  Y10S438/971

摘要： A method of growing a p-type doped Group II-VI semiconductor film includes the steps of forming a lattice comprising a Group II material and a Group VI material wherein a cation-rich condition is established at a surface of the lattice. The method further includes the steps of generating an elemental Group V flux by evaporating an elemental Group V material and providing the elemental Group V flux to a Group VI sublattice of the lattice.

摘要翻译： 生长p型掺杂的II-VI族半导体膜的方法包括以下步骤：形成包含II族材料和VI族材料的晶格，其中在晶格表面上建立富阳离子条件。 该方法还包括以下步骤：通过蒸发元素V族材料并将元素V族通量提供给晶格的VI族子晶格来产生元素V族通量。

公开(公告)号：US5535699A

公开(公告)日：1996-07-16

申请号：US418886

申请日：1995-04-07

申请人： Zempei Kawazu ,  Akihiro Takami

发明人： Zempei Kawazu ,  Akihiro Takami

IPC分类号： C30B19/04 ,  C30B29/46 ,  C30B33/02 ,  G01J1/02 ,  H01L21/368 ,  H01L31/0264 ,  H01L31/0296 ,  H01L31/10 ,  H01L31/103 ,  H01L31/18 ,  C30B25/04

CPC分类号： H01L31/1832 ,  C30B19/04 ,  C30B29/48 ,  H01L21/02411 ,  H01L21/02562 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02625 ,  H01L21/02628 ,  H01L31/02963 ,  H01L31/1032 ,  H01L21/02557

摘要： A method for producing a photo-voltaic infrared detector including growing a crystalline CdHgTe layer on a CdTe substrate by liquid phase epitaxy using a growth melt including tellurium as a solvent to which indium is added as a dopant impurity in a concentration of from 0.01 to 0.1 ppm; annealing the CdHgTe layer to produce a p-type CdHgTe layer including indium as an n-type background dopant impurity; forming an n-type region of a desired depth as a light receiving region at the surface of the p-type CdHgTe layer by implanting a dopant impurity producing n-type conductivity and annealing; and forming an n-side electrode on the n-type region and a p-side electrode a prescribed distance from the n-type region on the p-type CdHgTe layer.

摘要翻译： 一种光电红外检测器的制造方法，包括：使用包含碲作为掺杂铟作为掺杂剂的溶剂的生长熔液，通过液相外延在CdTe基板上生长结晶CdHgTe层，其浓度为0.01〜0.1 ppm; 退火CdHgTe层以产生包含铟作为n型背景掺杂剂杂质的p型CdHgTe层; 通过注入产生n型导电性和退火的掺杂剂杂质，在p型CdHgTe层的表面上形成具有所需深度的n型区域作为光接收区域; 在n型区域上形成n侧电极，在p型CdHgTe层上形成与n型区域规定距离的p侧电极。

公开(公告)号：US5130270A

公开(公告)日：1992-07-14

申请号：US567109

申请日：1990-08-14

申请人： Masatoshi Kobayashi ,  Yoshiharu Komine

发明人： Masatoshi Kobayashi ,  Yoshiharu Komine

IPC分类号： C30B19/10 ,  C30B19/04 ,  C30B19/06 ,  H01L21/208 ,  H01L21/368

CPC分类号： H01L21/02625 ,  C30B19/04 ,  C30B19/063 ,  C30B29/48 ,  H01L21/02411 ,  H01L21/0248 ,  H01L21/02562 ,  Y10S148/101

摘要： A hetero-epitaxial liquid phase growth method for growing a compound semiconductor by liquid phase epitaxy includes placing a melt in a closed melt boat on a substrate and epitaxially growing a first thin film, opening the melt boat while the melt remains in a melted state for a predetermined time to evaporate a component of the melt, and epitaxially growing a second thin film on the first thin film from the melt from which the component has been evaporated.

摘要翻译： 用于通过液相外延生长化合物半导体的异质外延液相生长方法包括将熔体在封闭的熔体舟中放置在衬底上并外延生长第一薄膜，在熔体保持熔融状态时打开熔体舟， 预定时间来蒸发熔体的组分，并且从部件蒸发的熔体在第一薄膜上外延生长第二薄膜。

公开(公告)号：US5079610A

公开(公告)日：1992-01-07

申请号：US545108

申请日：1990-06-27

申请人： Paul R. Norton

发明人： Paul R. Norton

IPC分类号： H01L21/368 ,  H01L31/0296 ,  H01L31/103 ,  H01L31/109

CPC分类号： H01L31/109 ,  H01L21/02411 ,  H01L21/0248 ,  H01L21/0251 ,  H01L21/02562 ,  H01L21/02625 ,  H01L31/02966 ,  H01L31/1032 ,  H01L21/02557 ,  H01L21/02576

摘要： Photodetectors that produce detectivities close to the theoretical maximum detectivity include an electrically insulating substrate carrying a body of semiconductor material that includes a region of first conductivity type and a region of second conductivity type where the region of first conductivity type overlies and covers the junction with the region of second conductivity type and where the junction between the first and second regions separates minority carriers in the region of second conductivity type from majority carriers in the region of first conductivity type. These photodetectors produce high detectivities where radiation incident on the detectors has wavelengths in the range of about 1 to about 25 microns or more, particularly under low background conditions.

摘要翻译： 产生接近理论最大检测率的检测率的光电检测器包括承载半导体材料体的电绝缘基板，其包括第一导电类型的区域和第二导电类型的区域，其中第一导电类型的区域覆盖并覆盖与 第二导电类型的区域，并且其中第一和第二区域之间的结点将第二导电类型区域中的少数载流子与第一导电类型区域中的多数载流子分开。 这些光电检测器产生高检测率，其中入射到检测器上的辐射波长在约1至约25微米或更大的范围内，特别是在低背景条件下。

公开(公告)号：US4950621A

公开(公告)日：1990-08-21

申请号：US795447

申请日：1985-11-06

申请人： Stuart J. Irvine ,  John B. Mullin ,  Jean Giess

发明人： Stuart J. Irvine ,  John B. Mullin ,  Jean Giess

IPC分类号： C30B25/02 ,  C30B25/10 ,  C30B29/40 ,  C30B29/48 ,  H01L21/365

CPC分类号： C30B25/02 ,  C30B25/105 ,  C30B29/40 ,  C30B29/48 ,  H01L21/02411 ,  H01L21/02562 ,  H01L21/02573 ,  H01L21/0262 ,  Y10S148/048 ,  Y10S148/064 ,  Y10S148/094

摘要： A method of growing an epitaxial crystalline layer on a substrate which comprises the steps of(a) providing in the reaction zone of a reaction vessel a heated substrate(b) establishing a gas stream, provided by a carrier gas which gas stream comprises at least 50% by volume of a gas which suppresses the homogeneous nucleation of particles in the vapor phase which contains, in the vapor phase, at least one alkyl of an element selected from Group 15 and Group 16 of the Periodic Table,(c) passing the gas stream through the reaction zone into contact with the heated substrate, and(d) irradiating at least a major part of the surface of the substrate with electromagnetic radiation to provide photolytic decomposition of the at least one alkyl and consequential epitaxial deposition of the layer containing the said element across at least a major part of the surface of the substrate.

摘要翻译： 一种在衬底上生长外延晶体层的方法，其包括以下步骤：（a）在反应区的反应区中提供加热衬底（b），建立由载气提供的气流，该气流至少包括 50体积％的气体，其抑制在汽相中含有至少一种选自元素周期表第15族和第16族的元素的至少一种烷基的气相中颗粒的均匀成核，（c）使 通过反应区的气流与加热的基底接触，以及（d）用电磁辐射照射基底的表面的至少大部分，以提供含有至少一种烷基和伴随的外延沉积的层的光解分解 所述元件穿过衬底表面的至少大部分。

公开(公告)号：US4655848A

公开(公告)日：1987-04-07

申请号：US769816

申请日：1985-08-26

申请人： Robert E. Kay ,  Hakchill Chan ,  Fred Ju ,  Burton A. Bray

发明人： Robert E. Kay ,  Hakchill Chan ,  Fred Ju ,  Burton A. Bray

IPC分类号： C30B25/02 ,  C30B25/22 ,  H01L21/363 ,  H01L21/38 ,  H01L21/36

CPC分类号： C30B25/02 ,  C30B25/22 ,  C30B29/48 ,  H01L21/02395 ,  H01L21/02411 ,  H01L21/0242 ,  H01L21/0248 ,  H01L21/02562 ,  H01L21/02631 ,  Y10T428/12528

摘要： A layer of HgCdTe (15) epitaxially grown onto a crystalline support (10), e.g., of sapphire of GaAs. A CdTe substrate (5) is epitaxially grown to a thickness of between 1 micron and 5 microns on the support (10). A HgTe source (3) is spaced from the CdTe substrate (5) a distance of between 0.1 mm and 10 mm. The substrate (5) and source (3) are heated together in a thermally insulating, reusable ampoule (17) within a growth temperature range of between 500.degree. C. and 625.degree. C. for a growth step having a duration of between 5 minutes and 4 hours. Then an interdiffusion step is performed, in which the source (3) and substrate (5) are cooled within a temperature range of between 400.degree. C. and 500.degree. C. for a time of between 1 hour and 16 hours. In a first growth step embodiment, the source (3) and substrate (5) are isothermal. In a second growth step embodiment, the source (3) and substrate (5) are non-isothermal. Means are disclosed for preventing contamination of the reactants during HgTe (3) synthesis, and for polishing the HgCdTe layer (15).

摘要翻译： 外延生长到例如GaAs的蓝宝石的结晶载体（10）上的HgCdTe（15）层。 在载体（10）上外延生长1微米至5微米厚度的CdTe衬底（5）。 HgTe源（3）与CdTe衬底（5）间隔0.1mm至10mm的距离。 在500℃至625℃的生长温度范围内，在绝热的可重复使用的安瓿（17）中将基底（5）和源（3）加热在一起，对于持续时间为5分钟的生长步骤 和4小时。 然后进行相互扩散步骤，其中将源（3）和基底（5）在400℃至500℃的温度范围内冷却1小时至16小时。 在第一生长步骤的实施例中，源（3）和衬底（5）是等温的。 在第二生长步骤的实施例中，源（3）和衬底（5）是非等温的。 公开了用于在HgTe（3）合成期间防止反应物污染并用于抛光HgCdTe层（15）的手段。