公开(公告)号：US12094892B2

公开(公告)日：2024-09-17

申请号：US18110362

申请日：2023-02-15

申请人： Monolithic 3D Inc.

发明人： Zvi Or-Bach ,  Deepak C. Sekar

IPC分类号： H01L27/146 ,  H01L25/075 ,  H01L25/16 ,  H01L27/15 ,  H01L33/16 ,  H01L33/62 ,  H10K19/00 ,  H10K39/00 ,  H10K59/00

CPC分类号： H01L27/14603 ,  H01L25/0756 ,  H01L25/167 ,  H01L27/14605 ,  H01L27/156 ,  H01L33/16 ,  H01L33/62 ,  H10K19/201 ,  H10K39/401 ,  H10K59/751

摘要： A 3D micro display, the 3D micro display including: a first level including a first single crystal layer, the first single crystal layer includes a plurality of LED driving circuits; a second level including a first plurality of light emitting diodes (LEDs), where the second level is disposed on top of the first level, where the second level includes at least ten individual first LED pixels; and a bonding structure, where the second level includes a plurality of bond pads, where the bonding structure includes oxide to oxide bonding.

公开(公告)号：US12087880B2

公开(公告)日：2024-09-10

申请号：US17652019

申请日：2022-02-22

申请人： Silanna UV Technologies Pte Ltd

发明人： Petar Atanackovic

IPC分类号： H01L33/26 ,  H01L21/02 ,  H01L23/66 ,  H01L27/15 ,  H01L29/15 ,  H01L29/20 ,  H01L29/24 ,  H01L29/267 ,  H01L29/51 ,  H01L29/66 ,  H01L29/778 ,  H01L29/786 ,  H01L33/00 ,  H01L33/06 ,  H01L33/16 ,  H01L33/18 ,  H01L33/62 ,  H01S5/34

CPC分类号： H01L33/26 ,  H01L21/02178 ,  H01L21/02192 ,  H01L21/02194 ,  H01L21/0228 ,  H01L21/02458 ,  H01L21/02507 ,  H01L23/66 ,  H01L27/15 ,  H01L29/151 ,  H01L29/2003 ,  H01L29/24 ,  H01L29/267 ,  H01L29/517 ,  H01L29/66462 ,  H01L29/7869 ,  H01L33/002 ,  H01L33/007 ,  H01L33/06 ,  H01L33/16 ,  H01L33/18 ,  H01L33/62 ,  H01S5/34 ,  H01L29/778 ,  H01L29/7786 ,  H01L2223/6627

摘要： The present disclosure provides techniques for epitaxial oxide materials, structures and devices. In some embodiments, a semiconductor structure includes an epitaxial oxide heterostructure, including: a substrate; a first epitaxial oxide layer comprising (Nix1Mgy1Zn1-x1-y1)(Alq1Ga1-q1)2O4 wherein 0≤x1≤1, 0≤y1≤1 and 0≤q1≤1; and a second epitaxial oxide layer comprising (Nix2Mgy2Zn1-x2-y2)(Alq2Ga1-q2)2O4 wherein 0≤x2≤1, 0≤y2≤1 and 0≤q2≤1. In some cases, at least one condition selected from x1≠x2, y1≠y2, and q1≠q2 is satisfied.

公开(公告)号：US12087878B2

公开(公告)日：2024-09-10

申请号：US17421394

申请日：2019-12-19

申请人： OSRAM Opto Semiconductors GmbH

发明人： Laura Kreiner ,  Martin Rudolf Behringer

IPC分类号： H01L33/22 ,  H01L31/0216 ,  H01L31/036 ,  H01L31/18 ,  H01L33/00 ,  H01L33/16 ,  H01L33/44 ,  F21S41/14 ,  G03B21/20

CPC分类号： H01L33/22 ,  H01L31/02161 ,  H01L31/036 ,  H01L31/1828 ,  H01L33/0083 ,  H01L33/16 ,  H01L33/44 ,  F21S41/14 ,  G03B21/2006

摘要： An optoelectronic semiconductor device may include a semiconductor body having a first main surface, a first dielectric layer over the first main surface, and a second dielectric layer on a side of the first dielectric layer facing away from the first main surface. The second dielectric layer is patterned to form an ordered photonic structure. The semiconductor body is suitable for emitting or receiving electromagnetic radiation through the first main surface. The first main surface is roughened, and the first dielectric layer is suitable for leveling a roughening of the first main surface.

公开(公告)号：US20240154060A1

公开(公告)日：2024-05-09

申请号：US18417474

申请日：2024-01-19

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Ryo ARASAWA ,  Hideaki SHISHIDO

IPC分类号： H01L33/16 ,  H01L27/12

CPC分类号： H01L33/16 ,  H01L27/1225 ,  H01L27/124

摘要： An object is to provide a light-emitting display device in which a pixel including a thin film transistor using an oxide semiconductor has a high aperture ratio. The light-emitting display device includes a plurality of pixels each including a thin film transistor and a light-emitting element. The pixel is electrically connected to a first wiring functioning as a scan line. The thin film transistor includes an oxide semiconductor layer over the first wiring with a gate insulating film therebetween. The oxide semiconductor layer is extended beyond the edge of a region where the first wiring is provided. The light-emitting element and the oxide semiconductor layer overlap with each other.

公开(公告)号：US20240141519A1

公开(公告)日：2024-05-02

申请号：US18279181

申请日：2022-02-28

申请人： Francesca Maria Toma ,  Guosong Zeng ,  Tadashi Ogitsu ,  Tuan Anh Pham ,  The Regents of the University of Michigan

发明人： Francesca Maria Toma ,  Tadashi Ogitsu ,  Zetian MI ,  Srinivas Vanka ,  Guosong Zeng ,  Tuan Anh Pham ,  Yixin Xiao

IPC分类号： C25B11/087 ,  C25B11/052 ,  C25B11/059 ,  H01L21/02 ,  H01L29/04 ,  H01L29/20 ,  H01L29/40 ,  H01L29/51 ,  H01L33/16 ,  H01L33/32 ,  H01L33/44

CPC分类号： C25B11/087 ,  C25B11/052 ,  C25B11/059 ,  H01L21/02175 ,  H01L21/02241 ,  H01L29/401 ,  H01L29/513 ,  H01L29/518 ,  H01L33/44 ,  H01L29/045 ,  H01L29/2003 ,  H01L33/16 ,  H01L33/32 ,  H01L2933/0025

摘要： A method of fabricating a device includes providing a substrate of the device, forming a structure of the device, the structure being supported by the substrate, having a semiconductor composition, and including a surface, where nitrogen is present at the surface, and incorporating oxygen into the surface to form a stabilizing layer on the surface. Incorporating oxygen into the surface is implemented such that the stabilizing layer includes a uniform distribution of an oxynitride material

公开(公告)号：US20240030381A1

公开(公告)日：2024-01-25

申请号：US18044046

申请日：2021-10-29

申请人： ams-OSRAM International GmbH

发明人： Peter Stauss ,  Adrian Avramescu ,  Norwin von Malm

IPC分类号： H01L33/16 ,  H01L33/00

CPC分类号： H01L33/16 ,  H01L33/0062 ,  H01L33/0093

摘要： In an embodiment a method for producing a semiconductor body includes providing an auxiliary carrier, depositing a layer sequence on the auxiliary carrier having a first layer including a doped semiconductor material and a second layer including an undoped semiconductor material on the first layer, performing an electrochemical porosification of the first layer, wherein a degree of porosity is at least 20% by volume, forming a functional semiconductor body on the second layer and detaching the semiconductor body from the auxiliary carrier.

公开(公告)号：US20230420613A1

公开(公告)日：2023-12-28

申请号：US18335843

申请日：2023-06-15

申请人： STANLEY ELECTRIC CO., LTD.

发明人： Toru KINOSHITA ,  Akio OGAWA ,  Hiroyuki KANO

IPC分类号： H01L33/32 ,  H01L33/02 ,  H01L33/16

CPC分类号： H01L33/325 ,  H01L33/025 ,  H01L33/16

摘要： An object of the present invention is to provide an ultraviolet semiconductor light-emitting element that allows a user to easily confirm whether or not it is driven to emit the deep ultraviolet light. An ultraviolet semiconductor light-emitting element according to the present invention includes a single crystal AlN substrate, an n-type AlGaN layer, an active layer, and a p-type AlGaN layer. The n-type AlGaN layer is formed on the single crystal AlN substrate. The active layer is formed on the n-type AlGaN layer. The active layer has a light emission peak wavelength of 250 nm or more and 280 nm or less. The p-type AlGaN layer is formed on the active layer. The C concentration in the single crystal AlN substrate is 3×1017 atoms/cm3 or more.

公开(公告)号：US11852781B2

公开(公告)日：2023-12-26

申请号：US17374404

申请日：2021-07-13

申请人： The Trustees of Princeton University

发明人： Paul J Steinhardt ,  Marian Florescu ,  Salvatore Torquato

IPC分类号： G02B1/00 ,  G02B5/30 ,  G02B6/125 ,  B82Y20/00 ,  G01K17/00 ,  G01L1/24 ,  G01N21/17 ,  H01L33/00 ,  H01L33/16 ,  G02B6/122 ,  G02B27/00

CPC分类号： G02B1/005 ,  B82Y20/00 ,  G01K17/00 ,  G01L1/24 ,  G01N21/17 ,  G02B5/3025 ,  G02B6/125 ,  G02B6/1225 ,  G02B27/0012 ,  H01L33/0058 ,  H01L33/0095 ,  H01L33/16 ,  Y10T29/49993

摘要： Waveguides and electromagnetic cavities fabricated in hyperuniform disordered materials with complete photonic bandgaps are provided. Devices comprising electromagnetic cavities fabricated in hyperuniform disordered materials with complete photonic bandgaps are provided. Devices comprising waveguides fabricated in hyperuniform disordered materials with complete photonic bandgaps are provided. The devices include electromagnetic splitters, filters, and sensors.

公开(公告)号：US20230402568A1

公开(公告)日：2023-12-14

申请号：US18085480

申请日：2022-12-20

申请人： Hexasolution Co., Ltd.

发明人： Duk Kyu BAE ,  Min Ji JO

IPC分类号： H01L33/16 ,  H01L33/32 ,  H01L33/00

CPC分类号： H01L33/16 ,  H01L33/32 ,  H01L33/007

摘要： The present disclosure relates to a semiconductor device having a three-dimensional structure capable of increasing a junction area of a semiconductor laminate per unit area of a substrate and a method of manufacturing the same. The semiconductor device includes a substrate having a first orientation plane as a main plane, a partition wall part provided to protrude outward from the main plane, and a semiconductor laminate grown from a side surface of the partition wall part and having, as a growth plane, a second orientation plane having a plane orientation different from that of the first orientation plane.

公开(公告)号：US11837683B2

公开(公告)日：2023-12-05

申请号：US17197493

申请日：2021-03-10

申请人： Applied Materials, Inc.

发明人： Michael Chudzik ,  Michel Khoury ,  Max Batres

IPC分类号： H01L33/32 ,  H01L33/16 ,  H01L33/08 ,  H01L33/10 ,  H01L33/18 ,  H01L33/00

CPC分类号： H01L33/32 ,  H01L33/007 ,  H01L33/0093 ,  H01L33/08 ,  H01L33/10 ,  H01L33/16 ,  H01L33/18

摘要： Exemplary processing methods of forming a semiconductor structure may include forming a nucleation layer on a semiconductor substrate. The methods may further include forming first, second, and third, gallium-and-nitrogen-containing regions on the nucleation layer. The first gallium-and-nitrogen-containing region may be porosified, without porosifying the second and third gallium-and-nitrogen containing regions. The methods may still further include forming a first active region on the porosified first gallium-and-nitrogen-containing region, and a second active region on the unporosified second gallium-and-nitrogen-containing region. The methods may yet also include forming a third active region on the unporosified third gallium-and-nitrogen-containing region.