公开(公告)号：US12237258B2

公开(公告)日：2025-02-25

申请号：US17608725

申请日：2020-04-30

Applicant: Rambus Inc.

Inventor： Shahram Nikoukary ,  Dongwoo Hong ,  Jonghyun Cho

IPC: H01L23/522 ,  H01L23/498 ,  H01L23/528 ,  H03K19/003 ,  H04B15/02 ,  H01L23/66

Abstract: The embodiments herein are directed to technologies for crosstalk cancellation structures. One semiconductor package includes conductive metal layers separated by insulating layers, the conductive metal layers for routing signals between external package terminals and pads on an integrated circuit device. Signal lines formed in the conductive metal layers have electrode structure (capacitor electrode-like structures) formed for at least adjacent signaling lines of the package terminals. Two of the electrode structures from the adjacent signaling lines are formed opposite each other on different metal layers.

公开(公告)号：US12232842B2

公开(公告)日：2025-02-25

申请号：US18047861

申请日：2022-10-19

Applicant: Medtronic MiniMed, Inc.

Inventor： Daniel Hahn ,  David L. Probst ,  Randal C. Schulhauser ,  Mohsen Askarinya ,  Patrick W. Kinzie ,  Thomas P. Miltich ,  Mark D. Breyen ,  Santhisagar Vaddiraju

IPC: A61B5/00 ,  A61B5/145 ,  A61B5/1468 ,  A61B5/1486 ,  H01L21/48 ,  H01L21/52 ,  H01L21/78 ,  H01L23/055 ,  H01L23/31 ,  H01L23/498 ,  H01L23/66

Abstract: An embodiment of a sensor device includes a base substrate, a circuit pattern formed overlying the interior surface of the substrate, a physiological characteristic sensor element on the exterior surface of the substrate, conductive plug elements located in vias formed through the substrate, each conductive plug element having one end coupled to a sensor electrode, and having another end coupled to the circuit pattern, a multilayer component stack carried on the substrate and connected to the circuit pattern, the stack including features and components to provide processing and wireless communication functionality for sensor data obtained in association with operation of the sensor device, and an enclosure structure coupled to the substrate to enclose the interior surface of the substrate, the circuit pattern, and the stack.

公开(公告)号：US20250062209A1

公开(公告)日：2025-02-20

申请号：US18234572

申请日：2023-08-16

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Wen-Sheng CHEN ,  Wei-Ling CHANG

IPC: H01L23/498 ,  H01L23/522 ,  H01L23/66

Abstract: A semiconductor device and a semiconductor package structure are provided. The semiconductor device includes a Radio Frequency (RF) circuit, at least one Ultra Thick Metal (UTM) layer and at least one aluminum (AP) mesh layer. The UTM layer is stacked on the RF circuit. The aluminum mesh layer is stacked on the UTM layer, and the UTM layer is connected to a power source or a ground through the aluminum mesh layer.

公开(公告)号：US20250046737A1

公开(公告)日：2025-02-06

申请号：US18925155

申请日：2024-10-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yongkoon Lee ,  Jingu Kim ,  Sangkyu Lee ,  Seokkyu Choi

IPC: H01L23/66 ,  H01L21/48 ,  H01L21/56 ,  H01L21/683 ,  H01L23/00 ,  H01L23/31 ,  H01L23/538 ,  H01Q9/04 ,  H01Q19/00

Abstract: A semiconductor package includes a supporting wiring structure including a first redistribution dielectric layer and a first redistribution conductive structure; a frame on the supporting wiring structure, having a mounting space and a through hole, and including a conductive material; a semiconductor chip in the mounting space and electrically connected to the first redistribution conductive structure; a cover wiring structure on the frame and the semiconductor chip and including a second redistribution dielectric layer and a second redistribution conductive structure; an antenna structure on the cover wiring structure; a connection structure extending in the through hole and electrically connecting the first redistribution conductive structure to the second redistribution conductive structure; and a dielectric filling member between the connection structure in the through hole and the frame and surrounding the semiconductor chip, the frame, and the connection structure.

公开(公告)号：US20250046701A1

公开(公告)日：2025-02-06

申请号：US18706744

申请日：2022-10-04

Applicant: RF MATERIALS CO., LTD.

Inventor： Ki Woo HAN ,  Won Shil KANG ,  Jin Young JEONG

IPC: H01L23/498 ,  H01L23/13 ,  H01L23/14 ,  H01L23/66

Abstract: The present invention relates to a package structure having an air gap, comprising: a first substrate layer; a second substrate layer provided on top of the first substrate layer and having a signal line printed in a predetermined pattern at the center of the upper surface thereof and a ground printed in a predetermined pattern on one side and the other side of the signal lines; a third substrate layer provided on top of the signal line and the ground; a fourth substrate layer provided on top of the third substrate layer. The third substrate layer has an air gap formed at the center thereof, an upper portion of the air gap is in contact with one lower side of the fourth substrate layer, and a lower portion of the air gap is in contact with the signal line.

公开(公告)号：US12218085B2

公开(公告)日：2025-02-04

申请号：US17612645

申请日：2020-04-08

Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor： Hirofumi Makino

IPC: H01L21/48 ,  H01L23/427 ,  H01L23/498 ,  H01L23/66 ,  H01P3/08 ,  H01P11/00

Abstract: In a wired substrate, heat dissipation performance is improved while an increase in an amount of metal is inhibited.
The substrate includes a transmission line, an insulating material, and a heat storage material. In the substrate provided with the transmission line, the insulating material and the heat storage material, the transmission line transmits a predetermined electrical signal from a semiconductor chip. The transmission line for transmitting the predetermined electrical signal from the semiconductor chip is wired in the insulating material. The heat storage material has a higher thermal conductivity than the insulating material to which the transmission line is wired and accumulates latent heat accompanying phase transition that occurs within an operating temperature range of the semiconductor chip.

公开(公告)号：US12211808B2

公开(公告)日：2025-01-28

申请号：US18343606

申请日：2023-06-28

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： HunTeak Lee ,  Choon Heung Lee ,  JunHo Ye

IPC: H01L23/66 ,  H01L21/48 ,  H01L21/56 ,  H01L23/31 ,  H01L23/538 ,  H01L23/552 ,  H01Q1/22

Abstract: A semiconductor device has an electrical component assembly, and a plurality of discrete antenna modules disposed over the electrical component assembly. Each discrete antenna module is capable of providing RF communication for the electrical component assembly. RF communication can be enabled for a first one of the discrete antenna modules, while RF communication is disabled for a second one of the discrete antenna modules. Alternatively, RF communication is enabled for the second one of the discrete antenna modules, while RF communication is disabled for the first one of the discrete antenna modules. A bump is formed over the discrete antenna modules. An encapsulant is deposited around the discrete antenna modules. A shielding layer is formed over the electrical components assembly. A stud or core ball can be formed internal to a bump connecting the discrete antenna modules to the electrical component assembly.

公开(公告)号：US12211804B2

公开(公告)日：2025-01-28

申请号：US18429080

申请日：2024-01-31

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： ChangOh Kim ,  KyoWang Koo ,  SungWon Cho ,  BongWoo Choi ,  JiWon Lee

IPC: H01L23/552 ,  H01L21/56 ,  H01L21/60 ,  H01L23/00 ,  H01L23/28 ,  H01L23/66 ,  H01L25/00

Abstract: A semiconductor device has a substrate. A first component and second component are disposed over the substrate. The first component includes an antenna. A lid is disposed over the substrate between the first component and second component. An encapsulant is deposited over the substrate and lid. A conductive layer is formed over the encapsulant and in contact with the lid. A first portion of the conductive layer over the first component is removed using laser ablation.

公开(公告)号：US12211765B2

公开(公告)日：2025-01-28

申请号：US18212160

申请日：2023-06-20

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Wei-Tung Chang

IPC: H01L23/31 ,  H01L21/56 ,  H01L23/66

Abstract: The present disclosure provides a semiconductor device package including a first device, a second device, and a spacer. The first device includes a substrate having a first dielectric constant. The second device includes a dielectric element, an antenna, and a reinforcing element. The dielectric element has a second dielectric constant less than the first dielectric constant. The antenna is at least partially within the dielectric element. The reinforcing element is disposed on the dielectric element, and the reinforcing element has a third dielectric constant greater than the first dielectric constant. The spacer is disposed between the first device and the second device and configured to define a distance between the first device and the second device.

公开(公告)号：US12205851B2

公开(公告)日：2025-01-21

申请号：US18438338

申请日：2024-02-09

Applicant: SKYWORKS SOLUTIONS, INC.

Inventor： Guillaume Alexandre Blin ,  Aniruddha B. Joshi ,  Christophe Masse

IPC: H01L21/84 ,  H01L23/66 ,  H01L27/12 ,  H01L29/417 ,  H03K17/081 ,  H01L21/8234 ,  H01L23/00 ,  H01L23/31 ,  H01L27/092

Abstract: Radio-frequency (RF) switching devices having improved voltage handling capability. In some embodiments, a switching device can include a first terminal and a second terminal, and a plurality of switching elements connected in series to form a stack between the first terminal and the second terminal. The switching elements can have a non-uniform distribution of a parameter that results in the stack having a first voltage handling capacity that is greater than a second voltage handling capacity corresponding to a similar stack having a substantially uniform distribution of the parameter.