公开(公告)号：US12087871B2

公开(公告)日：2024-09-10

申请号：US18385213

申请日：2023-10-30

申请人： W&W Sens Devices, Inc.

发明人： Shih-Yuan Wang ,  Shih-Ping Wang

IPC分类号： H01L31/0236 ,  G02B6/122 ,  G02B6/136 ,  H01L23/66 ,  H01L31/02 ,  H01L31/0224 ,  H01L31/0232 ,  H01L31/024 ,  H01L31/028 ,  H01L31/0304 ,  H01L31/0312 ,  H01L31/0352 ,  H01L31/036 ,  H01L31/054 ,  H01L31/0745 ,  H01L31/075 ,  H01L31/077 ,  H01L31/105 ,  H01L31/107 ,  H01L31/18 ,  G02B6/12

CPC分类号： H01L31/035272 ,  G02B6/122 ,  G02B6/136 ,  H01L23/66 ,  H01L31/02005 ,  H01L31/02016 ,  H01L31/02019 ,  H01L31/022408 ,  H01L31/022475 ,  H01L31/02327 ,  H01L31/02363 ,  H01L31/024 ,  H01L31/028 ,  H01L31/0284 ,  H01L31/0304 ,  H01L31/03046 ,  H01L31/0312 ,  H01L31/035209 ,  H01L31/035227 ,  H01L31/035281 ,  H01L31/036 ,  H01L31/054 ,  H01L31/0745 ,  H01L31/075 ,  H01L31/077 ,  H01L31/105 ,  H01L31/1055 ,  H01L31/107 ,  H01L31/1075 ,  H01L31/1804 ,  H01L31/1808 ,  H01L31/1812 ,  H01L31/184 ,  H01L31/1844 ,  G02B2006/12097 ,  G02B2006/12176 ,  H01L2223/6627 ,  Y02E10/52 ,  Y02E10/548

摘要： Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as pillars and/or holes, effectively increase the effective absorption length resulting in a greater absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more.

公开(公告)号：US20240114730A1

公开(公告)日：2024-04-04

申请号：US18070684

申请日：2022-11-29

申请人： Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.

发明人： Gaobo LIN ,  Lingling WANG

IPC分类号： H01L31/036

CPC分类号： H01L27/3272 ,  H01L51/56 ,  H01L2227/323

摘要： A display panel and a manufacturing method thereof are provided. The display panel includes a thin film transistor. The thin film transistor includes a channel, a first conductive portion and a second conductive portion disposed on two sides of the channel, an interlayer insulation layer, a first electrode, and a second electrode. Wherein, the display panel includes a first via hole and a second via hole, the first via hole penetrates through the interlayer insulation layer and exposes a surface and a side of the first conductive portion, a first light-shielding conductive element is filled in the first via hole, the second via hole penetrates through the interlayer insulation layer and exposes a surface and a side of the second conductive portion, and the second light-shielding conductive element is filled in the second via hole.

公开(公告)号：US11901426B2

公开(公告)日：2024-02-13

申请号：US18067117

申请日：2022-12-16

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chao-Hsun Wang ,  Yu-Feng Yin ,  Kuo-Yi Chao ,  Mei-Yun Wang ,  Feng-Yu Chang ,  Chen-Yuan Kao

IPC分类号： H01L29/00 ,  H01L31/036 ,  H01L29/423 ,  H01L29/45 ,  H01L21/28 ,  H01L29/49 ,  H01L29/78 ,  H01L29/66

CPC分类号： H01L29/42364 ,  H01L21/28026 ,  H01L29/42372 ,  H01L29/45 ,  H01L29/4925 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/66545 ,  H01L29/78 ,  H01L29/66795 ,  H01L29/785

摘要： A method for forming a semiconductor device includes forming a metal gate stack having a gate dielectric layer and a gate electrode disposed over the gate dielectric layer. The gate electrode includes a first metal layer and a second metal layer. The method further includes performing a plasma treatment to a top surface of the metal gate stack and forming a conductive layer over the treated top surface of the metal gate stack. A top portion of the conductive layer is formed above a top surface of the gate dielectric layer, and a bottom portion of the conductive layer penetrates into the first and the second metal layers of the gate electrode at different distances.

公开(公告)号：US20230411541A1

公开(公告)日：2023-12-21

申请号：US18458040

申请日：2023-08-29

申请人： The Solaria Corporation

发明人： Lisong ZHOU ,  Huaming ZHOU ,  Zhixun Zhang

IPC分类号： H01L31/0216 ,  H01L31/0463 ,  H01L31/02 ,  H01L31/0236 ,  H01L31/18 ,  H01L31/036 ,  H01L31/05

CPC分类号： H01L31/02168 ,  H01L31/0463 ,  H01L31/02002 ,  H01L2221/1068 ,  H01L31/18 ,  H01L31/036 ,  H01L31/0512 ,  H01L31/02366

摘要： The present disclosure describes methods of forming a colored conductive ribbon for a solar module which includes combining a conductive ribbon with a channeled ribbon holder, applying a color coating to at least the conductive ribbon within the channel, curing the color coating on the conductive ribbon, and separating the conductive ribbon from the channeled holder.

公开(公告)号：US20230332942A1

公开(公告)日：2023-10-19

申请号：US18028764

申请日：2021-08-24

申请人： Mitsubishi Electric Corporation

发明人： Masaaki SHIMATANI ,  Shimpei OGAWA ,  Shoichiro FUKUSHIMA ,  Satoshi OKUDA

IPC分类号： G01J1/02 ,  H01L31/036 ,  G01R31/12

CPC分类号： G01J1/0295 ,  H01L31/036 ,  G01R31/129

摘要： An electromagnetic wave detector includes a semiconductor layer, a two-dimensional material layer, a first electrode portion, a second electrode portion, and a ferroelectric layer. Two-dimensional material layer is electrically connected to semiconductor layer. First electrode portion is electrically connected to two-dimensional material layer. Second electrode portion is electrically connected to two-dimensional material layer with semiconductor layer interposed therebetween. Ferroelectric layer is electrically connected to at least any one of first electrode portion, second electrode portion and semiconductor layer. Electromagnetic wave detector is configured such that an electric field generated from ferroelectric layer is shielded with respect to two-dimensional material layer. Alternatively, ferroelectric layer is arranged so as not to be overlapped with two-dimensional material layer in plan view.

公开(公告)号：US11791358B2

公开(公告)日：2023-10-17

申请号：US17396693

申请日：2021-08-07

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Yun-Wei Cheng ,  Chun-Hao Chou ,  Kuo-Cheng Lee

IPC分类号： H01L27/146 ,  H01L31/036

CPC分类号： H01L27/1463 ,  H01L27/1464 ,  H01L27/14607 ,  H01L27/14629 ,  H01L27/14683 ,  H01L31/036

摘要： A method of forming a semiconductor device includes forming photodiodes extending from a front-side surface of a semiconductor layer into the semiconductor layer; forming transistors on the front-side surface of the semiconductor layer; forming an interconnect structure over the transistors, the interconnect structure comprising an inter-metal dielectric and metal lines in the inter-metal dielectric; etching first regions of a backside surface of the semiconductor layer to form trenches in the semiconductor layer and non-overlapping the photodiodes; after forming the trenches, etching second regions of the backside surface of the semiconductor layer to form pits in the semiconductor layer and overlapping the photodiodes; and depositing a dielectric material in the trenches and the pits.

公开(公告)号：US20230197869A1

公开(公告)日：2023-06-22

申请号：US18052325

申请日：2022-11-03

申请人： OXFORD UNIVERSITY INNOVATION LIMITED

发明人： HENRY JAMES SNAITH ,  EDWARD JAMES WILLIAM CROSSLAND ,  ANDREW HEY ,  JAMES BALL ,  MICHAEL LEE ,  PABLO DOCAMPO

IPC分类号： H01L31/036 ,  C23C14/06 ,  H10K30/15 ,  H10K85/00 ,  H01L31/0224 ,  H01L31/0352 ,  H01L31/0725 ,  H01L31/18

CPC分类号： H01L31/036 ,  C23C14/06 ,  H01L31/0725 ,  H01L31/1864 ,  H01L31/1884 ,  H01L31/022466 ,  H01L31/035272 ,  H10K30/15 ,  H10K30/151 ,  H10K85/00 ,  H10K71/40 ,  Y02E10/549

摘要： The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one n-type layer; a p- type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region: a layer of a perovskite semiconductor without open porosity. The perovskite semiconductor is generally light-absorbing. In some embodiments, disposed between the n-type region and the p-type region is: (i) a first layer which comprises a scaffold material, which is typically porous, and a perovskite semiconductor, which is typically disposed in pores of the scaffold material; and (ii) a capping layer dis -posed on said first layer, which capping layer is said layer of a perovskite semiconductor without open porosity, wherein the perovskite semiconductor in the capping layer is in contact with the perovskite semiconductor in the first layer. The layer of the perovskite semiconductor without open porosity (which may be said capping layer) typically forms a planar heterojunction with the n-type region or the p-type region. The invention also provides processes for producing such optoelectronic devices which typically involve solution deposition or vapour deposition of the perovskite. In one embodiment, the process is a low temperature process; for instance, the entire process may be performed at a temperature or temperatures not exceeding 150° C.

公开(公告)号：US20230155052A1

公开(公告)日：2023-05-18

申请号：US18093751

申请日：2023-01-05

申请人： Hoon KIM

发明人： Hoon KIM

IPC分类号： H01L31/113 ,  H01L31/0232 ,  H01L31/036 ,  H01L27/146

CPC分类号： H01L31/1136 ,  H01L31/02327 ,  H01L31/036 ,  H01L27/1461 ,  H01L31/02322 ,  H01L31/113 ,  H01L27/146 ,  H01L27/14679

摘要： Provided are a light-receiving element which has more capability of detecting wavelengths than that of existing silicon light-receiving elements and a unit pixel of an image sensor by using it. The light-receiving element includes: a light-receiving unit which is floated or connected to external voltage and absorbs light; an oxide film which is formed to come in contact with a side of the light-receiving unit; a source and a drain which stand off the light-receiving unit with the oxide film in between and face each other; a channel which is formed between the source and the drain and forms an electric current between the source and the drain; and a wavelength expanding layer which is formed in at least one among the light-receiving unit, the oxide film and the channel and forms a plurality of local energy levels by using strained silicon.

公开(公告)号：US11621360B2

公开(公告)日：2023-04-04

申请号：US17707429

申请日：2022-03-29

申请人： W&WSENS DEVICES, INC.

发明人： Shih-Yuan Wang ,  Shih-Ping Wang

IPC分类号： H01L31/0352 ,  H01L31/075 ,  H01L31/105 ,  H01L31/028 ,  H01L31/0224 ,  H01L31/107 ,  H01L31/02 ,  H01L31/0236 ,  G02B6/136 ,  H01L31/0312 ,  H01L31/036 ,  H01L31/077 ,  H01L31/18 ,  H01L31/054 ,  G02B6/122 ,  H01L23/66 ,  H01L31/0232 ,  H01L31/024 ,  H01L31/0304 ,  H01L31/0745 ,  G02B6/12

摘要： Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as pillars and/or holes, effectively increase the effective absorption length resulting in a greater absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more.

公开(公告)号：US20230054279A1

公开(公告)日：2023-02-23

申请号：US17974325

申请日：2022-10-26

申请人： W&WSens Devices, Inc.

发明人： Shih-Yuan WANG ,  Shih-Ping Wang

IPC分类号： H01L31/0236 ,  H01L31/0352 ,  H01L31/18 ,  H01L27/144 ,  H04B10/69 ,  H01L31/02 ,  H01L31/0232 ,  H01L31/09 ,  H01L31/103 ,  H01L31/028 ,  H01L31/107 ,  H04B10/25 ,  H04B10/40 ,  H04B10/80 ,  G02B1/00 ,  G02B6/42 ,  H01L27/146 ,  H01L31/077 ,  H01L31/036 ,  H01L31/075 ,  H01L31/105

摘要： Microstructures of micro and/or nano holes on one or more surfaces enhance photodetector optical sensitivity. Arrangements such as a CMOS Image Sensor (CIS) as an imaging LIDAR using a high speed photodetector array wafer of Si, Ge, a Ge alloy on SI and/or Si on Ge on Si, and a wafer of CMOS Logic Processor (CLP) ib Si fi signal amplification, processing and/or transmission can be stacked for electrical interaction. The wafers can be fabricated separately and then stacked or can be regions of the same monolithic chip. The image can be a time-of-flight image. Bayer arrays can be enhanced with microstructure holes. Pixels can be photodiodes, avalanche photodiodes, single photon avalanche photodiodes and phototransistors on the same array and can be Ge or Si pixels. The array can be of high speed photodetectors with data rates of 56 Gigabits per second, Gbps, or more per photodetector.