公开(公告)号：US11830954B2

公开(公告)日：2023-11-28

申请号：US17974325

申请日：2022-10-26

申请人： W&WSens Devices, Inc.

发明人： Shih-Yuan Wang ,  Shih-Ping Wang

IPC分类号： H01L31/0236 ,  H01L27/144 ,  G02B1/00 ,  G02B6/42 ,  H01L27/146 ,  H01L31/02 ,  H01L31/0232 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/036 ,  H01L31/075 ,  H01L31/077 ,  H01L31/09 ,  H01L31/103 ,  H01L31/105 ,  H01L31/107 ,  H01L31/18 ,  H04B10/25 ,  H04B10/40 ,  H04B10/69 ,  H04B10/80

CPC分类号： H01L31/02363 ,  G02B1/002 ,  G02B6/4204 ,  G02B6/428 ,  H01L27/1443 ,  H01L27/1446 ,  H01L27/14625 ,  H01L31/02 ,  H01L31/028 ,  H01L31/02016 ,  H01L31/0232 ,  H01L31/0236 ,  H01L31/02325 ,  H01L31/02327 ,  H01L31/02366 ,  H01L31/036 ,  H01L31/0352 ,  H01L31/035218 ,  H01L31/035281 ,  H01L31/075 ,  H01L31/077 ,  H01L31/09 ,  H01L31/103 ,  H01L31/105 ,  H01L31/107 ,  H01L31/1075 ,  H01L31/1804 ,  H01L31/1808 ,  H04B10/25 ,  H04B10/40 ,  H04B10/691 ,  H04B10/6971 ,  H04B10/801 ,  G02B1/005 ,  Y02E10/547 ,  Y02P70/50

摘要： Microstructures of micro and/or nano holes on one or more surfaces enhance photodetector optical sensitivity. Arrangements such as a CMOS Image Sensor (CIS) as an imaging LIDAR using a high speed photodetector array wafer of Si, Ge, a Ge alloy on SI and/or Si on Ge on Si, and a wafer of CMOS Logic Processor (CLP) ib Si fi signal amplification, processing and/or transmission can be stacked for electrical interaction. The wafers can be fabricated separately and then stacked or can be regions of the same monolithic chip. The image can be a time-of-flight image. Bayer arrays can be enhanced with microstructure holes. Pixels can be photodiodes, avalanche photodiodes, single photon avalanche photodiodes and phototransistors on the same array and can be Ge or Si pixels. The array can be of high speed photodetectors with data rates of 56 Gigabits per second, Gbps, or more per photodetector.

公开(公告)号：US10468543B2

公开(公告)日：2019-11-05

申请号：US16296985

申请日：2019-03-08

申请人： W&WSens, Devices Inc.

发明人： Shih-Yuan Wang ,  Shih-Ping Wang ,  M. Saif Islam

IPC分类号： H01L31/0236 ,  H01L31/0232 ,  G02B1/00 ,  H01L31/02 ,  H01L31/028 ,  H01L27/144 ,  H01L27/146 ,  H01L31/103 ,  H01L31/107 ,  H01L31/0352 ,  H01L31/18 ,  H04B10/69 ,  H04B10/40 ,  H04B10/25 ,  H04B10/80 ,  H01L31/09 ,  H01L31/105

摘要： Microstructure enhanced photodiodes and avalanche photodiodes are monolithically integrated with CMOS/BiCMOS circuitry such as transimpedance amplifiers. Microstructures, such as holes, can improve quantum efficiency in silicon and III-V materials and can also reduce avalanche voltages for avalanche photodiodes. Applications include optical communications within and between datacenters, telecommunications, LIDAR, and free space data communication.

公开(公告)号：US09496435B2

公开(公告)日：2016-11-15

申请号：US14892821

申请日：2014-05-22

申请人： W&Wsens Devices, Inc.

发明人： Shih-Yuan Wang ,  Shih-Ping Wang

IPC分类号： H01L29/82 ,  H01L31/0352 ,  H01L31/107 ,  H01L31/028 ,  H01L31/105

CPC分类号： H01L31/035272 ,  G02B6/122 ,  G02B6/136 ,  G02B2006/12097 ,  G02B2006/12176 ,  H01L23/66 ,  H01L31/02005 ,  H01L31/02019 ,  H01L31/022408 ,  H01L31/02327 ,  H01L31/02363 ,  H01L31/024 ,  H01L31/028 ,  H01L31/0284 ,  H01L31/0304 ,  H01L31/03046 ,  H01L31/035227 ,  H01L31/035281 ,  H01L31/054 ,  H01L31/0745 ,  H01L31/075 ,  H01L31/105 ,  H01L31/1055 ,  H01L31/107 ,  H01L31/1075 ,  H01L31/1804 ,  H01L31/184 ,  H01L31/1844 ,  H01L2223/6627 ,  Y02E10/52 ,  Y02E10/548

摘要： Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures arc described. The microstructures, such as pillars and/or holes, effectively increase the effective absorption length resulting in a greater absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more.

摘要翻译： 描述了使用微结构增强半导体中光子吸收的技术。 诸如支柱和/或孔的微结构有效地增加了有效的吸收长度，导致光子的更大的吸收。 对于硅光电二极管和硅雪崩光电二极管，使用微结构进行吸收增强可以在波长为850 nm的光子上产生超过10 Gb / s的带宽，量子效率约为90％以上。

公开(公告)号：US20220246775A1

公开(公告)日：2022-08-04

申请号：US17707429

申请日：2022-03-29

申请人： W&WSENS DEVICES, INC.

发明人： Shih-Yuan WANG ,  Shih-Ping WANG

IPC分类号： H01L31/0352 ,  H01L31/075 ,  H01L31/105 ,  G02B6/136 ,  H01L31/028 ,  H01L31/0224 ,  H01L31/0312 ,  H01L31/036 ,  H01L31/077 ,  H01L31/18 ,  H01L31/107 ,  H01L31/054 ,  G02B6/122 ,  H01L23/66 ,  H01L31/02 ,  H01L31/0232 ,  H01L31/0236 ,  H01L31/024 ,  H01L31/0304 ,  H01L31/0745

摘要： Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as pillars and/or holes, effectively increase the effective absorption length resulting in a greater absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more.

公开(公告)号：US20220102563A1

公开(公告)日：2022-03-31

申请号：US17532831

申请日：2021-11-22

申请人： W&WSENS DEVICES, INC.

发明人： Shih-Yuan WANG ,  Shih-Ping WANG

IPC分类号： H01L31/0352 ,  H01L31/075 ,  H01L31/105 ,  G02B6/136 ,  H01L31/028 ,  H01L31/0224 ,  H01L31/0312 ,  H01L31/036 ,  H01L31/077 ,  H01L31/18 ,  H01L31/107 ,  H01L31/054 ,  G02B6/122 ,  H01L23/66 ,  H01L31/02 ,  H01L31/0232 ,  H01L31/0236 ,  H01L31/024 ,  H01L31/0304 ,  H01L31/0745

摘要： Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as pillars and/or holes, effectively increase the effective absorption length resulting in a greater absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more.

公开(公告)号：US20190019899A1

公开(公告)日：2019-01-17

申请号：US16042535

申请日：2018-07-23

申请人： W&WSens, Devices Inc.

发明人： Shih-Yuan WANG ,  Shih-Ping WANG

IPC分类号： H01L31/0236 ,  H04B10/80 ,  G02B1/00 ,  G02B6/42 ,  H04B10/69 ,  H04B10/40 ,  H04B10/25 ,  H01L31/18 ,  H01L31/107 ,  H01L31/103 ,  H01L31/09 ,  H01L31/0352 ,  H01L31/028 ,  H01L31/0232 ,  H01L31/02 ,  H01L27/146 ,  H01L27/144

摘要： Lateral and vertical microstructure enhanced photodetectors and avalanche photodetectors are monolithically integrated with CMOS/BiCMOS ASICs and can also be integrated with laser devices using fluidic assembly techniques. Photodetectors can be configured in a vertical PIN arrangement or lateral metal-semiconductor-metal arrangement where electrodes are in an inter-digitated pattern. Microstructures, such as holes and protrusions, can improve quantum efficiency in silicon, germanium and III-V materials and can also reduce avalanche voltages for avalanche photodiodes. Applications include optical communications within and between datacenters, telecommunications, LIDAR, and free space data communication.

公开(公告)号：US20180102442A1

公开(公告)日：2018-04-12

申请号：US15797821

申请日：2017-10-30

申请人： W&WSens, Devices Inc.

发明人： Shih-Yuan WANG ,  Shih-Ping WANG ,  M. Saif Islam

IPC分类号： H01L31/0236 ,  H04B10/80 ,  G02B1/00 ,  H04B10/69 ,  H04B10/40 ,  H04B10/25 ,  H01L31/18 ,  H01L31/107 ,  H01L31/103 ,  H01L31/09 ,  H01L31/0352 ,  H01L31/028 ,  H01L31/0232 ,  H01L31/02 ,  H01L27/146 ,  H01L27/144

CPC分类号： H01L31/02327 ,  G02B1/002 ,  G02B1/005 ,  H01L27/1443 ,  H01L27/1446 ,  H01L27/14625 ,  H01L31/02 ,  H01L31/02002 ,  H01L31/02016 ,  H01L31/0232 ,  H01L31/02325 ,  H01L31/0236 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/035218 ,  H01L31/035281 ,  H01L31/09 ,  H01L31/103 ,  H01L31/107 ,  H01L31/1804 ,  H01L31/1808 ,  H04B10/25 ,  H04B10/40 ,  H04B10/691 ,  H04B10/6971 ,  H04B10/801 ,  Y02E10/547

摘要： Microstructure enhanced photodiodes and avalanche photodiodes are monolithically integrated with CMOS/BiCMOS circuitry such as transimpedance amplifiers. Microstructures, such as holes, can improve quantum efficiency in silicon and III-V materials and can also reduce avalanche voltages for avalanche photodiodes. Applications include optical communications within and between datacenters, telecommunications, LIDAR, and free space data communication.

公开(公告)号：US11791432B2

公开(公告)日：2023-10-17

申请号：US17182954

申请日：2021-02-23

申请人： W&WSens Devices, Inc.

发明人： Shih-Yuan Wang ,  Shih-Ping Wang

IPC分类号： H01L27/146 ,  H01L31/0236 ,  H01L31/0352 ,  H01L31/18 ,  H01L27/144 ,  H04B10/69 ,  H01L31/02 ,  H01L31/0232 ,  H01L31/09 ,  H01L31/103 ,  H01L31/028 ,  H01L31/107 ,  H04B10/25 ,  H04B10/40 ,  H04B10/80 ,  G02B1/00 ,  G02B6/42 ,  H01L31/077 ,  H01L31/036 ,  H01L31/075 ,  H01L31/105

CPC分类号： H01L27/14607 ,  G02B1/002 ,  G02B6/4204 ,  G02B6/428 ,  H01L27/1443 ,  H01L27/1446 ,  H01L27/14625 ,  H01L31/02 ,  H01L31/028 ,  H01L31/02016 ,  H01L31/0232 ,  H01L31/0236 ,  H01L31/02325 ,  H01L31/02327 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/036 ,  H01L31/0352 ,  H01L31/035218 ,  H01L31/035281 ,  H01L31/075 ,  H01L31/077 ,  H01L31/09 ,  H01L31/103 ,  H01L31/105 ,  H01L31/107 ,  H01L31/1075 ,  H01L31/1804 ,  H01L31/1808 ,  H04B10/25 ,  H04B10/40 ,  H04B10/691 ,  H04B10/6971 ,  H04B10/801 ,  G02B1/005 ,  Y02E10/547 ,  Y02P70/50

摘要： Lateral and vertical microstructure enhanced photodetectors and avalanche photodetectors are monolithically integrated with CMOS/BiCMOS ASICs and can also be integrated with laser devices using fluidic assembly techniques. Photodetectors can be configured in a vertical PIN arrangement or lateral metal-semiconductor-metal arrangement where electrodes are in an inter-digitated pattern. Microstructures, such as holes and protrusions, can improve quantum efficiency in silicon, germanium and III-V materials and can also reduce avalanche voltages for avalanche photodiodes. Applications include optical communications within and between datacenters, telecommunications, LIDAR, and free space data communication.

公开(公告)号：US20220149098A1

公开(公告)日：2022-05-12

申请号：US17434382

申请日：2020-09-21

申请人： W&WSens Devices, Inc.

发明人： Shih-Yuan WANG ,  Shih-Ping Wang

IPC分类号： H01L27/146 ,  H01L31/107

摘要： Microstructure enhanced photodector arrangements uses a CMOS image sensor (CIS) wafer of crystalline Si and a CMOS Logic Processor (CLP) wafer stacked on each other for electrical interaction. The wafers can be fabricated separately and stacked or can be regions of the same monolithic chip. The image can be a time-of-flight image. Bayer arrays are enhanced with microstructure holes. Avalanche photodiodes, single photon avalanche photodiodes and phototransistors can be laterally and/or vertically doped. Photodetectors/photosensors can have slanted sidewalls for improved optical confinement and reduced crosstalk.

公开(公告)号：US20210242354A1

公开(公告)日：2021-08-05

申请号：US17182954

申请日：2021-02-23

申请人： W&WSens Devices, Inc.

发明人： Shih-Yuan WANG ,  Shih-Ping Wang

IPC分类号： H01L31/0236 ,  H01L31/0352 ,  H01L31/18 ,  H01L27/144 ,  H04B10/69 ,  H01L31/02 ,  H01L31/0232 ,  H01L31/09 ,  H01L31/103 ,  H01L31/028 ,  H01L31/107 ,  H04B10/25 ,  H04B10/40 ,  H04B10/80 ,  G02B1/00 ,  G02B6/42 ,  H01L27/146 ,  H01L31/077 ,  H01L31/036 ,  H01L31/075 ,  H01L31/105

摘要： Lateral and vertical microstructure enhanced photodetectors and avalanche photodetectors are monolithically integrated with CMOS/BiCMOS ASICs and can also be integrated with laser devices using fluidic assembly techniques. Photodetectors can be configured in a vertical PIN arrangement or lateral metal-semiconductor-metal arrangement where electrodes are in an inter-digitated pattern. Microstructures, such as holes and protrusions, can improve quantum efficiency in silicon, germanium and III-V materials and can also reduce avalanche voltages for avalanche photodiodes. Applications include optical communications within and between datacenters, telecommunications, LIDAR, and free space data communication.