公开(公告)号：US12021158B2

公开(公告)日：2024-06-25

申请号：US18120578

申请日：2023-03-13

申请人： Golden Solar (Quanzhou) New Energy Technology Co., Ltd.

发明人： Kairui Lin

IPC分类号： H01L31/0224 ,  H01L31/0216 ,  H01L31/0236 ,  H01L31/028 ,  H01L31/0368 ,  H01L31/0376 ,  H01L31/077 ,  H01L31/18

CPC分类号： H01L31/022441 ,  H01L31/02168 ,  H01L31/02366 ,  H01L31/028 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/077 ,  H01L31/1824

摘要： The present disclosure pertains to the field of back contact heterojunction cell technologies, and particularly relates to a mask-layer-free hybrid passivation back contact cell and a fabrication method thereof; the method includes: S101: providing a silicon wafer substrate; S102: sequentially forming a first semiconductor layer and a mask layer on a back surface of the silicon wafer substrate, wherein the first semiconductor layer includes a tunneling oxide layer and a first doped polycrystalline layer; S103: performing first etching on the first semiconductor layer on the obtained back surface to form first opening regions W1; S104: forming a textured surface in the first opening region W1 on the back surface by texturing and cleaning; S105: removing the mask layer; S106: forming a second semiconductor layer on the obtained back surface; and S107: performing second etching on a polished region of the obtained back surface.

公开(公告)号：US20240178336A1

公开(公告)日：2024-05-30

申请号：US18178228

申请日：2023-03-03

申请人： ZHEJIANG JINKO SOLAR CO., LTD. ,  JINKO SOLAR CO., LTD.

发明人： Jingsheng JIN ,  Guangming LIAO

IPC分类号： H01L31/077 ,  H01L31/02 ,  H01L31/0224 ,  H01L31/028 ,  H01L31/048 ,  H01L31/05

CPC分类号： H01L31/077 ,  H01L31/02008 ,  H01L31/022425 ,  H01L31/028 ,  H01L31/048 ,  H01L31/0512

摘要： A solar cell and a photovoltaic module. The solar cell includes: a substrate including a first surface; a tunneling oxide layer covering the first surface; a doped conductive layer covering a surface of the tunneling oxide layer away from the substrate; an intrinsic polycrystalline silicon layer formed on one side of the doped conductive layer away from the tunneling oxide layer; and a plurality of first electrodes arranged on one side of the intrinsic polycrystalline silicon layer away from the doped conductive layer and electrically connected to the doped conductive layer. At least a portion of the first electrode is located in the intrinsic polycrystalline silicon layer, and a gap is defined between a top end of the first electrode and the substrate.

公开(公告)号：US11799039B2

公开(公告)日：2023-10-24

申请号：US17080530

申请日：2020-10-26

申请人： OXFORD UNIVERSITY INNOVATION LIMITED

发明人： Henry J. Snaith ,  Antonio Abate ,  Nakita K. Noel

IPC分类号： H01L31/0216 ,  H10K30/88 ,  H10K85/00 ,  H01L31/032 ,  H01L31/077 ,  H01L31/18 ,  H10K30/10 ,  H10K30/15 ,  H10K102/10

CPC分类号： H01L31/02167 ,  H01L31/032 ,  H01L31/077 ,  H01L31/1868 ,  H10K30/88 ,  H10K85/00 ,  H10K30/10 ,  H10K30/151 ,  H10K2102/102 ,  Y02E10/549 ,  Y02P70/50

摘要： The present invention relates to devices comprising metal halide perovskites and organic passivating agents. In particular, the invention relates to photovoltaic and optoelectronic devices comprising passivated metal halide perovskites. The device according to the invention comprises: (a) a metal halide perovskite; and (b) a passivating agent which is an organic compound; wherein molecules of the passivating agent are chemically bonded to anions or cations in the metal halide perovskite. The invention also provides a process for producing a photovoltaic device, which photovoltaic device comprises: (a) a metal halide perovskite; and (b) a passivating agent which is an organic compound; wherein molecules of the passivating agent are chemically bonded to anions or cations in the metal halide perovskite, wherein the process comprises treating a metal halide perovskite with a passivating agent, which passivating agent is an organic compound and is suitable for chemically bonding to anions or cations in the metal halide perovskite.

公开(公告)号：US11616153B2

公开(公告)日：2023-03-28

申请号：US16250463

申请日：2019-01-17

申请人： Shangrao Jinko solar Technology Development Co., LTD

发明人： Jungmin Ha ,  Sungjin Kim ,  Juhwa Cheong ,  Junyong Ahn ,  Hyungwook Choi ,  Wonjae Chang ,  Jaesung Kim

IPC分类号： H01L31/0216 ,  H01L31/0224 ,  H01L31/0747 ,  H01L31/02 ,  H01L31/0368 ,  H01L31/077 ,  H01L31/18

摘要： A solar cell can include a silicon semiconductor substrate; an oxide layer on a first surface of the silicon semiconductor substrate; a polysilicon layer on the oxide layer; a diffusion region at a second surface of the silicon semiconductor substrate; a dielectric film on the polysilicon layer; a first electrode connected to the polysilicon layer through the dielectric film; a passivation film on the diffusion region; and a second electrode connected to the diffusion region through the passivation film.

公开(公告)号：US20220246775A1

公开(公告)日：2022-08-04

申请号：US17707429

申请日：2022-03-29

申请人： W&WSENS DEVICES, INC.

发明人： Shih-Yuan WANG ,  Shih-Ping WANG

IPC分类号： H01L31/0352 ,  H01L31/075 ,  H01L31/105 ,  G02B6/136 ,  H01L31/028 ,  H01L31/0224 ,  H01L31/0312 ,  H01L31/036 ,  H01L31/077 ,  H01L31/18 ,  H01L31/107 ,  H01L31/054 ,  G02B6/122 ,  H01L23/66 ,  H01L31/02 ,  H01L31/0232 ,  H01L31/0236 ,  H01L31/024 ,  H01L31/0304 ,  H01L31/0745

摘要： Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as pillars and/or holes, effectively increase the effective absorption length resulting in a greater absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more.

公开(公告)号：US20220102563A1

公开(公告)日：2022-03-31

申请号：US17532831

申请日：2021-11-22

申请人： W&WSENS DEVICES, INC.

发明人： Shih-Yuan WANG ,  Shih-Ping WANG

IPC分类号： H01L31/0352 ,  H01L31/075 ,  H01L31/105 ,  G02B6/136 ,  H01L31/028 ,  H01L31/0224 ,  H01L31/0312 ,  H01L31/036 ,  H01L31/077 ,  H01L31/18 ,  H01L31/107 ,  H01L31/054 ,  G02B6/122 ,  H01L23/66 ,  H01L31/02 ,  H01L31/0232 ,  H01L31/0236 ,  H01L31/024 ,  H01L31/0304 ,  H01L31/0745

摘要： Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as pillars and/or holes, effectively increase the effective absorption length resulting in a greater absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more.

公开(公告)号：US11205735B2

公开(公告)日：2021-12-21

申请号：US15972204

申请日：2018-05-06

申请人： Universidad de Antioquia ,  Anhidridos y Derivados de Colombia S.A.—Andercol ,  SUMINISTROS DE COLOMBIA S.A.S., SUMICOL ,  Empresas Públicas de Medellín E.S.P.

发明人： Franklin Jaramillo Isaza ,  Daniel Estiben Ramirez Zora ,  Juan Felipe Montoya Arango

IPC分类号： H01L31/075 ,  H01L31/02 ,  H01L31/032 ,  H01L51/00 ,  H01L31/0224 ,  H01L31/0336 ,  H01L51/42 ,  H01L31/077 ,  H01L31/0256

摘要： Optoelectronic devices having an improved architecture are disclosed, such as p-i-n hybrid solar cells. These solar cells are characterized by including an insulating mesoporous scaffold in between the hole transportation layer and the photoactive layer, in such a way that the photoactive layer infiltrates the insulating mesoporous scaffold and contacts the hole transportation layer. The infiltration of the photoactive layer in the mesoporous scaffold improves the performance of the hole transportation layer and increases the photovoltaic performance of the solar cell. Solar cells, according to the present invention are manufactured in their entirety below 150° C. and present advantages in terms of cost and ease of manufacture, performance, and energy efficiency, stability over time and reproducibility.

公开(公告)号：US20210119492A1

公开(公告)日：2021-04-22

申请号：US16970099

申请日：2019-02-22

申请人： Phion Technologies Corp.

发明人： Jonathan Nydell ,  Steve Laver ,  Matt Nydell

IPC分类号： H02J50/30 ,  H02J50/80 ,  H02J50/40 ,  H02J50/90 ,  H04B10/50 ,  H04B10/112 ,  H04B10/61 ,  H04B10/80 ,  H01L31/068 ,  H01L31/052 ,  H01L31/077

摘要： A transmitter of a wireless power transfer and data communication system comprising a transmitter system including a transmitter housing, one or more high-power laser sources, a laser controller, one or more low-power laser sources, one or more photodiodes, a beam steering system and lens assembly, and a safety system. High-power and low-power beams are directed to corresponding receivers and transceivers of a transceiver system inside a remote receiver system by the controller and the beam steering system and lens assembly. Low-power beams include optical communication to the transceiver system. The photodiodes of the transmitter system receive optical communication from the transceiver system. Low-power beams are co-propagated with and in close proximity to high-power beams substantially along an entire distance between the transmitter housing and the receiver system. The safety system instructs the controller to reduce the high-power sources in response to detected events.

公开(公告)号：US20200044107A1

公开(公告)日：2020-02-06

申请号：US16595959

申请日：2019-10-08

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Tayfun Gokmen ,  Oki Gunawan ,  Richard A. Haight ,  Jeehwan Kim ,  David B. Mitzi ,  Mark T. Winkler

IPC分类号： H01L31/075 ,  H01L31/032 ,  H01L31/18 ,  H01L31/0328 ,  H01L31/077

摘要： A photovoltaic device includes a first contact and a hybrid absorber layer. The hybrid absorber layer includes a chalcogenide layer and a semiconductor layer in contact with the chalcogenide layer. A buffer layer is formed on the absorber layer, and a transparent conductive contact layer is formed on the buffer layer.

公开(公告)号：US10319872B2

公开(公告)日：2019-06-11

申请号：US13468292

申请日：2012-05-10

申请人： Tze-Chiang Chen ,  Augustin J. Hong ,  Jeehwan Kim ,  Devendra K. Sadana

发明人： Tze-Chiang Chen ,  Augustin J. Hong ,  Jeehwan Kim ,  Devendra K. Sadana

IPC分类号： H01L31/076 ,  H01L31/077 ,  C23C16/50 ,  H01L31/20 ,  H01L21/02 ,  C23C16/02 ,  H01L31/0216 ,  H01L31/0368 ,  H01L31/0376 ,  H01L31/0392 ,  C23C16/455 ,  C23C16/515 ,  H01L31/0224 ,  H01L31/065 ,  H01L31/18 ,  H01L31/056

摘要： A method for forming a photovoltaic device includes providing a substrate. A layer is deposited to form one or more layers of a photovoltaic stack on the substrate. The depositing of the amorphous layer includes performing a high power flash deposition for depositing a first portion of the layer. A low power deposition is performed for depositing a second portion of the layer.