公开(公告)号：US20230207712A1

公开(公告)日：2023-06-29

申请号：US18168548

申请日：2023-02-13

Applicant: Shangrao Jinko solar Technology Development Co., LTD

Inventor： Jungmin Ha ,  Sungjin Kim ,  Juhwa Cheong ,  Junyong Ahn ,  Hyungwook Choi ,  Wonjae Chang ,  Jaesung Kim

IPC: H01L31/0224 ,  H01L31/0216 ,  H01L31/0747 ,  H01L31/02 ,  H01L31/0368 ,  H01L31/077 ,  H01L31/18

CPC classification number: H01L31/022433 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/0747 ,  H01L31/0201 ,  H01L31/02167 ,  H01L31/03685 ,  H01L31/077 ,  H01L31/1824 ,  H01L31/1864 ,  H01L31/1868 ,  Y02E10/50

Abstract: A solar cell can include a silicon semiconductor substrate; an oxide layer on a first surface of the silicon semiconductor substrate; a polysilicon layer on the oxide layer; a diffusion region at a second surface of the silicon semiconductor substrate; a dielectric film on the polysilicon layer; a first electrode connected to the polysilicon layer through the dielectric film; a passivation film on the diffusion region; and a second electrode connected to the diffusion region through the passivation film.

公开(公告)号：US11616153B2

公开(公告)日：2023-03-28

申请号：US16250463

申请日：2019-01-17

Applicant: Shangrao Jinko solar Technology Development Co., LTD

Inventor： Jungmin Ha ,  Sungjin Kim ,  Juhwa Cheong ,  Junyong Ahn ,  Hyungwook Choi ,  Wonjae Chang ,  Jaesung Kim

IPC: H01L31/0216 ,  H01L31/0224 ,  H01L31/0747 ,  H01L31/02 ,  H01L31/0368 ,  H01L31/077 ,  H01L31/18

Abstract: A solar cell can include a silicon semiconductor substrate; an oxide layer on a first surface of the silicon semiconductor substrate; a polysilicon layer on the oxide layer; a diffusion region at a second surface of the silicon semiconductor substrate; a dielectric film on the polysilicon layer; a first electrode connected to the polysilicon layer through the dielectric film; a passivation film on the diffusion region; and a second electrode connected to the diffusion region through the passivation film.

公开(公告)号：US11855234B2

公开(公告)日：2023-12-26

申请号：US16933363

申请日：2020-07-20

Applicant: Shangrao Jinko solar Technology Development Co., LTD

Inventor： Juhwa Cheong ,  Yundeok Yoon ,  Jaesung Kim ,  Junyong Ahn

IPC: H01L31/0236 ,  H01L31/18 ,  H01L31/068 ,  H01L21/02

CPC classification number: H01L31/02363 ,  H01L21/02019 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/50

Abstract: A method of manufacturing a solar cell, includes forming a rounded uneven member having a rounded end portion at a second surface of a semiconductor substrate having a first surface and the second surface opposite to each other, forming conductive regions comprising forming a first conductive region at the first surface of the semiconductor substrate and forming a second conductive region on the second surface of the semiconductor substrate, wherein the second conductive region comprises a semiconductor layer different and separated from the semiconductor substrate and forming electrodes comprising forming a first electrode electrically connected to the first conductive region and forming a second electrode electrically connected to the second conductive region.