公开(公告)号：US20250056914A1

公开(公告)日：2025-02-13

申请号：US18932519

申请日：2024-10-30

Applicant: Maxeon Solar Pte. Ltd.

Inventor： RICHARD HAMILTON SEWELL ,  GABRIELA BUNEA

IPC: H01L31/18 ,  H01L31/0224 ,  H01L31/048 ,  H01L31/05 ,  H01L31/068

Abstract: Disclosed herein are approaches to fabricating solar cells, solar cell strings and solar modules using roll-to-roll foil-based metallization approaches. Methods disclosed herein can comprise the steps of providing at least one solar cell wafer on a first roll unit and conveying a metal foil to the first roll unit. The metal foil can be coupled to the solar cell wafer on the first roll unit to produce a unified pairing of the metal foil and the solar cell wafer. We disclose solar energy collection devices and manufacturing methods thereof enabling reduction of manufacturing costs due to simplification of the manufacturing process by a high throughput foil metallization process.

公开(公告)号：US20250056899A1

公开(公告)日：2025-02-13

申请号：US18741678

申请日：2024-06-12

Applicant: Zhejiang Aiko Solar Technology Co., Ltd. ,  Guangdong Aiko Solar Energy Technology Co., Ltd. ,  Tianjin Aiko Solar Energy Technology Co., Ltd. ,  Zhuhai Fushan Aiko Solar Technology Co., Ltd.

Inventor： Yongqian WANG ,  Gang CHEN

IPC: H01L31/068 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0236 ,  H01L31/0475 ,  H01L31/05 ,  H01L31/18

Abstract: The disclosure is applicable to the technical field of solar cells and provides a solar cell and a method for manufacturing thereof, a cell assembly, and a photovoltaic system. In the solar cell, a P-type silicon substrate is used as a base layer, a first surface of the P-type silicon substrate is not completely covered with P-type doped layers, and a second surface of the P-type silicon substrate is not completely covered with N-type doped layers. Moreover, on the P-type silicon substrate, the P-type doped layers are locally arranged on a light-facing surface. In addition, the N-type doped layers are locally arranged on a light-sheltered surface, and a total area of all third regions is set to be greater than that of all first regions.

公开(公告)号：US12218259B2

公开(公告)日：2025-02-04

申请号：US18163134

申请日：2023-02-01

Applicant: KANEKA CORPORATION

Inventor： Shimpei Okamoto ,  Junichi Nakamura

IPC: H01L31/0224 ,  H01L31/068 ,  H01L31/18

Abstract: A solar cell capable of preventing short-circuiting during signaling connection and a method for manufacturing the solar cell. A solar cell includes a semiconductor substrate, a first semiconductor layer having a conductivity type different from that of the semiconductor substrate. The first semiconductor layer includes a main functional portion which has a first base end portion on one side in a first direction of the semiconductor substrate over an entire length in a second direction and a plurality of first collecting portions extending from the first base end portion toward the other side in the first direction and on which a first electrode pattern is stacked, and an isolation portion which is formed linearly at an end portion on the other side in the first direction of the semiconductor substrate over an entire length in the second direction and on which the first electrode pattern is not stacked.

公开(公告)号：US12191404B2

公开(公告)日：2025-01-07

申请号：US17498979

申请日：2021-10-12

Applicant: MAXEON SOLAR PTE. LTD.

Inventor： Gabriel Harley ,  David D. Smith ,  Peter John Cousins

IPC: H01L31/02 ,  H01L31/0224 ,  H01L31/068

Abstract: The formation of solar cell contacts using a laser is described. A method of fabricating a back-contact solar cell includes forming a poly-crystalline material layer above a single-crystalline substrate. The method also includes forming a dielectric material stack above the poly-crystalline material layer. The method also includes forming, by laser ablation, a plurality of contacts holes in the dielectric material stack, each of the contact holes exposing a portion of the poly-crystalline material layer; and forming conductive contacts in the plurality of contact holes.

公开(公告)号：US20240421238A1

公开(公告)日：2024-12-19

申请号：US18817582

申请日：2024-08-28

Applicant: Trina Solar Co., Ltd.

Inventor： Changseo PARK ,  Yoonsil JIN ,  Youngho CHOE

IPC: H01L31/0216 ,  H01L31/0224 ,  H01L31/068 ,  H01L31/18

Abstract: A bifacial solar cell includes a silicon substrate; an emitter layer; a plurality of first electrodes locally on the emitter layer; a first aluminum oxide layer on the emitter layer; a first silicon oxide layer between the first aluminum oxide layer and the emitter layer; a first anti-reflection layer on the first aluminum oxide layer; a back surface field layer on the silicon substrate; a second aluminum oxide layer on the silicon substrate; a second silicon oxide layer between the second aluminum oxide layer and the silicon substrate; a second anti-reflection layer on the second aluminum oxide layer; and a plurality of second electrodes respectively on the back surface field layers through the second anti-reflection layer, the second aluminum oxide layer and the second silicon oxide layer.

公开(公告)号：US20240405142A1

公开(公告)日：2024-12-05

申请号：US18731152

申请日：2024-05-31

Applicant: SOLARSPACE NEW ENERGY (CHUZHOU) CO., LTD.

Inventor： Ping FENG ,  Qiangqiang LI ,  Zhaomin CHEN

IPC: H01L31/068 ,  H01L31/02 ,  H01L31/0224 ,  H01L31/028 ,  H01L31/18

Abstract: A solar cell structure comprises a substrate including a front side and a back side. A first tunnel oxide layer, a first polycrystalline silicon layer, a first silicon nitride layer, and a plurality of first electrodes are sequentially formed on the front side of the substrate. A second tunnel oxide layer, a second polycrystalline silicon layer, a second silicon nitride layer, and a plurality of second electrodes are sequentially formed on the back side of the substrate.

公开(公告)号：US12159955B2

公开(公告)日：2024-12-03

申请号：US17409617

申请日：2021-08-23

Applicant: Maxeon Solar Pte. Ltd.

Inventor： Richard Hamilton Sewell ,  Gabriela Elena Bunea

IPC: H01L31/18 ,  H01L31/0224 ,  H01L31/048 ,  H01L31/05 ,  H01L31/068

Abstract: Disclosed herein are approaches to fabricating solar cells, solar cell strings and solar modules using roll-to-roll foil-based metallization approaches. Methods disclosed herein can comprise the steps of providing at least one solar cell wafer on a first roll unit and conveying a metal foil to the first roll unit. The metal foil can be coupled to the solar cell wafer on the first roll unit to produce a unified pairing of the metal foil and the solar cell wafer. We disclose solar energy collection devices and manufacturing methods thereof enabling reduction of manufacturing costs due to simplification of the manufacturing process by a high throughput foil metallization process.

公开(公告)号：US20240395963A1

公开(公告)日：2024-11-28

申请号：US18043407

申请日：2022-07-26

Applicant: TONGWEI SOLAR (MEISHAN) CO., LTD.

Inventor： Wenzhou XU ,  Hao CHEN ,  Mingzhang DENG ,  Yu HE ,  Fan ZHOU ,  Guoqiang XING ,  Qian YAO

IPC: H01L31/18 ,  H01L31/068 ,  H01L31/0747

Abstract: A method for manufacturing a TOPCon cell includes following steps: texturing a front side of an silicon wafer and then preparing a PN junction; forming a tunnel oxide layer, an intrinsic polysilicon layer, a doped polysilicon layer, and a silicon oxide mask layer in sequence on a back side of the silicon wafer, wherein the tunnel oxide layer is deposited by PEALD at a deposition temperature of 150° C. to 200° C., the doped polysilicon layer is deposited by PECVD, and the silicon oxide mask layer has a thickness of 10 nm to 40 nm; removing a wraparound silicon oxide mask layer material and a wraparound polysilicon layer material from the front side of the silicon wafer, and then removing the silicon oxide mask layer from the back side; and forming a front electrode on the PN junction and a back electrode on the doped polysilicon layer, respectively.

公开(公告)号：US20240387762A1

公开(公告)日：2024-11-21

申请号：US18197651

申请日：2023-05-15

Applicant: Maxeon Solar Pte. Ltd.

Inventor： David Smith ,  Gerly Reich

IPC: H01L31/068 ,  H01L31/02 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/0368 ,  H01L31/0376 ,  H01L31/18 ,  H01L31/20

Abstract: Methods of fabricating solar cell emitter regions with differentiated P-type and N-type layouts and incorporating dotted diffusion, and resulting solar cells, are described. In an example, a solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is on a first thin dielectric layer on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is on a second thin dielectric layer on the back surface of the substrate. The second polycrystalline silicon emitter region has a vertical thickness less than a vertical thickness of the first polycrystalline silicon emitter region.

公开(公告)号：US20240379884A1

公开(公告)日：2024-11-14

申请号：US18783283

申请日：2024-07-24

Applicant: Maxeon Solar Pte. Ltd.

Inventor： RICHARD HAMILTON SEWELL ,  DAVID AARON RANDOLPH BARKHOUSE ,  JUNBO WU ,  MICHAEL CUDZINOVIC ,  PAUL LOSCUTOFF ,  JOSEPH BEHNKE ,  MICHEL ARSÈNE OLIVIER NGAMO TOKO

IPC: H01L31/0224 ,  H01L31/02 ,  H01L31/068 ,  H01L31/0745

Abstract: Approaches for the metallization of solar cells and the resulting solar cells are described. In an example, a method of fabricating a solar cell involves forming a barrier layer on a semiconductor region disposed in or above a substrate. The semiconductor region includes monocrystalline or polycrystalline silicon. The method also involves forming a conductive paste layer on the barrier layer. The method also involves forming a conductive layer from the conductive paste layer. The method also involves forming a contact structure for the semiconductor region of the solar cell, the contact structure including at least the conductive layer.