公开(公告)号：US11616153B2

公开(公告)日：2023-03-28

申请号：US16250463

申请日：2019-01-17

申请人： Shangrao Jinko solar Technology Development Co., LTD

发明人： Jungmin Ha ,  Sungjin Kim ,  Juhwa Cheong ,  Junyong Ahn ,  Hyungwook Choi ,  Wonjae Chang ,  Jaesung Kim

IPC分类号： H01L31/0216 ,  H01L31/0224 ,  H01L31/0747 ,  H01L31/02 ,  H01L31/0368 ,  H01L31/077 ,  H01L31/18

摘要： A solar cell can include a silicon semiconductor substrate; an oxide layer on a first surface of the silicon semiconductor substrate; a polysilicon layer on the oxide layer; a diffusion region at a second surface of the silicon semiconductor substrate; a dielectric film on the polysilicon layer; a first electrode connected to the polysilicon layer through the dielectric film; a passivation film on the diffusion region; and a second electrode connected to the diffusion region through the passivation film.

公开(公告)号：US20230207712A1

公开(公告)日：2023-06-29

申请号：US18168548

申请日：2023-02-13

申请人： Shangrao Jinko solar Technology Development Co., LTD

发明人： Jungmin Ha ,  Sungjin Kim ,  Juhwa Cheong ,  Junyong Ahn ,  Hyungwook Choi ,  Wonjae Chang ,  Jaesung Kim

IPC分类号： H01L31/0224 ,  H01L31/0216 ,  H01L31/0747 ,  H01L31/02 ,  H01L31/0368 ,  H01L31/077 ,  H01L31/18

CPC分类号： H01L31/022433 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/0747 ,  H01L31/0201 ,  H01L31/02167 ,  H01L31/03685 ,  H01L31/077 ,  H01L31/1824 ,  H01L31/1864 ,  H01L31/1868 ,  Y02E10/50

摘要： A solar cell can include a silicon semiconductor substrate; an oxide layer on a first surface of the silicon semiconductor substrate; a polysilicon layer on the oxide layer; a diffusion region at a second surface of the silicon semiconductor substrate; a dielectric film on the polysilicon layer; a first electrode connected to the polysilicon layer through the dielectric film; a passivation film on the diffusion region; and a second electrode connected to the diffusion region through the passivation film.