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    EFFICIENCY RESTORATION IN A PHOTOVOLTAIC CELL
    4.
    发明申请
    EFFICIENCY RESTORATION IN A PHOTOVOLTAIC CELL 审中-公开
    光伏电池中的有效恢复

    公开(公告)号：US20130092214A1

    公开(公告)日：2013-04-18

    申请号：US13607679

    申请日：2012-09-08

    Applicant: Young T. Chae ,  Augustin J. Hong ,  Jeehwan Kim ,  Young M. Lee ,  Devendra K. Sadana

    Inventor： Young T. Chae ,  Augustin J. Hong ,  Jeehwan Kim ,  Young M. Lee ,  Devendra K. Sadana

    IPC: H01L31/058

    CPC classification number: H01L31/056 ,  F24S80/50 ,  F28F1/32 ,  H01L31/03767 ,  H02S40/44 ,  Y02E10/50 ,  Y02E10/60

    Abstract: The electrical output efficiency of a photovoltaic thermal system can be restored from degradation due to light exposure by annealing a photovoltaic thermal cell at an elevated temperature. The elevated temperature at the photovoltaic thermal cell can be provided by redirecting the flow of a heat exchange fluid to bypass a heat exchanger unit. A boiler unit may be employed to provide additional heating of the heat exchange fluid during the anneal. Further, a variable configuration lid can be provided over a front surface of the photovoltaic thermal cell to control ventilation over the front surface. During the anneal, the position of the variable configuration lid can be set so as to trap heat above the front surface and to elevate the anneal temperature further.

    Abstract translation: 光伏热系统的电输出效率可以通过在升高的温度下对光伏热电池进行退火而由于曝光导致的退化而恢复。 可以通过将热交换流体的流动重新定向以绕过热交换器单元来提供光伏热电池的高温。 可以使用锅炉单元来在退火期间提供热交换流体的附加加热。 此外，可以在光伏热电池的前表面上设置可变配置盖，以控制前表面上的通风。 在退火过程中，可以设置可变配置盖的位置，以便在前表面捕获热量并进一步提高退火温度。

    Germanium Photodetector
    7.
    发明申请
    Germanium Photodetector 有权
    锗光检测器

    公开(公告)号：US20120288992A1

    公开(公告)日：2012-11-15

    申请号：US13556597

    申请日：2012-07-24

    Applicant: Solomon Assefa ,  Jeehwan Kim ,  Jin-Hong Park ,  Yurii A. Vlasov

    Inventor： Solomon Assefa ,  Jeehwan Kim ,  Jin-Hong Park ,  Yurii A. Vlasov

    IPC: H01L31/18

    CPC classification number: H01L31/1808 ,  H01L31/1085 ,  Y02E10/50

    Abstract: A method for forming a photodetector device includes forming an insulator layer on a substrate, forming a germanium (Ge) layer on the insulator layer and a portion of the substrate, forming a second insulator layer on the Ge layer, patterning the Ge layer, forming a capping insulator layer on the second insulator layer and a portion of the first insulator layer, heating the device to crystallize the Ge layer resulting in an single crystalline Ge layer, implanting n-type ions in the single crystalline Ge layer, heating the device to activate n-type ions in the single crystalline Ge layer, and forming electrodes electrically connected to the single crystalline n-type Ge layer.

    Abstract translation: 一种形成光检测器件的方法包括：在基片上形成绝缘体层，在绝缘体层和一部分基底上形成锗（Ge）层，在Ge层上形成第二绝缘层，构图Ge层，形成 在所述第二绝缘体层上的封盖绝缘体层和所述第一绝缘体层的一部分，加热所述器件以使所述Ge层结晶，得到单晶Ge层，在所述单晶Ge层中注入n型离子，将所述器件加热至 在单晶Ge层中激活n型离子，以及形成电连接到单晶n型Ge层的电极。

    Self-aligned III-V MOSFET fabrication with in-situ III-V epitaxy and in-situ metal epitaxy and contact formation
    10.
    发明申请
    Self-aligned III-V MOSFET fabrication with in-situ III-V epitaxy and in-situ metal epitaxy and contact formation 审中-公开
    自对准III-V MOSFET制造，具有原位III-V外延和原位金属外延和接触形成

    公开(公告)号：US20120187505A1

    公开(公告)日：2012-07-26

    申请号：US13013206

    申请日：2011-01-25

    Applicant: Dechao Guo ,  Shu-Jen Han ,  Jeehwan Kim ,  Kuen-Ting Shiu

    Inventor： Dechao Guo ,  Shu-Jen Han ,  Jeehwan Kim ,  Kuen-Ting Shiu

    IPC: H01L29/78 ,  H01L21/336

    CPC classification number: H01L21/8252 ,  H01L21/26546 ,  H01L21/28575 ,  H01L21/3245 ,  H01L29/0847 ,  H01L29/201 ,  H01L29/207 ,  H01L29/41783 ,  H01L29/452 ,  H01L29/66446 ,  H01L29/66477 ,  H01L29/66522 ,  H01L29/66628 ,  H01L29/78

    Abstract: A method for forming a transistor includes providing a patterned gate stack disposed on a III-V substrate and having sidewall spacers formed on sides of the patterned gate stack, the III-V substrate including source/drain regions adjacent to the sidewall spacers and field oxide regions formed adjacent to the source/drain regions. The method includes growing raised source/drain regions on the source/drain regions, the grown raised source/drain regions including III-V semiconductor material, and growing metal contacts on the grown raised source/drain regions. Another method for forming a transistor includes providing a patterned gate stack disposed on a III-V substrate and having sidewall spacers formed on sides of the patterned gate stack, the III-V substrate including source/drain regions adjacent to the sidewall spacers and field oxide regions formed adjacent to the source/drain regions. The method includes growing metal contacts on the source/drain regions. Transistors and computer program products are also disclosed.

    Abstract translation: 一种用于形成晶体管的方法，包括提供设置在III-V衬底上并且具有形成在图案化栅极堆叠的侧面上的侧壁间隔物的图案化栅极堆叠，所述III-V衬底包括与侧壁间隔物相邻的源极/漏极区域和场氧化物 与源/漏区相邻形成的区域。 该方法包括在源极/漏极区域上生长凸起的源极/漏极区域，生长的升高的源极/漏极区域包括III-V半导体材料，以及在生长的升高的源极/漏极区域上生长的金属接触。 形成晶体管的另一种方法包括提供设置在III-V衬底上并且具有形成在图案化栅极堆叠的侧面上的侧壁间隔物的图案化栅极堆叠，所述III-V衬底包括与侧壁间隔物相邻的源极/漏极区域和场氧化物 与源/漏区相邻形成的区域。 该方法包括在源/漏区上生长金属接触。 还公开了晶体管和计算机程序产品。

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