公开(公告)号：US20240282844A1

公开(公告)日：2024-08-22

申请号：US18442767

申请日：2024-02-15

申请人： KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY

发明人： Hadeel ALAMOUDI ,  Iman S. ROQAN

IPC分类号： H01L29/66 ,  H01L31/032 ,  H01L31/0352 ,  H01L31/109 ,  H01L31/12

CPC分类号： H01L29/66984 ,  H01L31/0321 ,  H01L31/035218 ,  H01L31/109 ,  H01L31/125

摘要： An ultraviolet based spin-electronics device includes a Si-based substrate, an n-type semiconductor layer located on the Si-based substrate, wherein the n-type semiconductor layer includes an Sn-doped β-Ga2O3 material, a p-type semiconductor layer located on the n-type semiconductor layer to form a p-n junction, the p-type semiconductor layer including MnO quantum dots, QDs, and first and second electrodes electrically connected to the n-type semiconductor layer and the p-type semiconductor layer, respectively. Spins of charge carriers in the p-type semiconductor layer are aligned according to a first direction when incident UV light has a first polarization, and according to a second direction, opposite to the first direction, when the incident UV light has a second polarization, different from the first polarization.

公开(公告)号：US20180215658A1

公开(公告)日：2018-08-02

申请号：US15747564

申请日：2016-07-27

申请人： CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE ,  UNIVERSITE PIERRE ET MARIE CURIE (PARIS 6)

发明人： Abhay SHUKLA ,  Johan BISCARAS ,  Andrea PARADISI

IPC分类号： C03C17/245 ,  C03C17/22

CPC分类号： C03C17/245 ,  C03C17/22 ,  C03C17/23 ,  C03C2217/216 ,  C03C2217/28 ,  C03C2217/288 ,  C03C2217/944 ,  C03C2218/152 ,  C03C2218/154 ,  C03C2218/32 ,  H01B13/0033 ,  H01L31/022466 ,  H01L31/028 ,  H01L31/032 ,  H01L31/0321 ,  H01L31/18 ,  H01L31/1884 ,  H01L39/24 ,  Y02E10/547

摘要： The invention relates to a process for permanently electrostatically doping a layer of a conductive or non-conductive material that is deposited on a solid substrate, to the doped material obtained according to this process, and to the use of such a material.

公开(公告)号：US20120190180A1

公开(公告)日：2012-07-26

申请号：US12931067

申请日：2011-01-24

申请人： Joseph D. LoBue ,  Dingyuan Lu ,  Louay Eldada

发明人： Joseph D. LoBue ,  Dingyuan Lu ,  Louay Eldada

IPC分类号： H01L21/20 ,  H01B1/02 ,  B01J19/00 ,  H01B1/00

CPC分类号： H01L21/02554 ,  H01L21/02562 ,  H01L21/02568 ,  H01L21/0262 ,  H01L31/0321 ,  H01L31/0326 ,  H01L31/1828 ,  Y02E10/543 ,  Y02P70/521

摘要： A method for making a polycrystalline composition, wherein the method includes the steps of a) preparing a precursor material, b) heating the precursor material to a reaction temperature in the presence of a precursor vapor supplied from a source at a preselected partial pressure, for a sufficient time to initiate an interaction between the precursor material and the precursor vapor to form a heated precursor material, and c) cooling the heated precursor material at a predetermined cooling rate, optionally, in the presence of the precursor vapor supplied at a partial pressure, to yield the polycrystalline composition. A device for implementing the method of the present invention is also provided

摘要翻译： 一种制备多晶组合物的方法，其中所述方法包括以下步骤：a）制备前体材料，b）在预选分压下从源提供的前体蒸气存在下，将前体材料加热到反应温度， 足够的时间来引发前体材料和前体蒸气之间的相互作用以形成加热的前体材料，以及c）以预定的冷却速率冷却被加热的前体材料，任选地，在分压下供应的前体蒸气 ，以产生多晶组合物。 还提供了一种用于实现本发明的方法的设备

公开(公告)号：US20100078072A1

公开(公告)日：2010-04-01

申请号：US12565849

申请日：2009-09-24

申请人： Yasutaka Nishida ,  Michihiko Inaba ,  Shinya Sakurada ,  Satoshi Itoh

发明人： Yasutaka Nishida ,  Michihiko Inaba ,  Shinya Sakurada ,  Satoshi Itoh

IPC分类号： H01L31/00

CPC分类号： H01L31/0321 ,  H01L31/0296 ,  H01L31/0322 ,  H01L31/0323 ,  H01L31/072 ,  H01L31/073 ,  Y02E10/541 ,  Y02E10/543

摘要： A solar cell includes a p-n junction formed by joining a p-type semiconductor and an n-type semiconductor. The p-type semiconductor is a chalcopyrite compound semiconductor with a band gap of 1.5 eV or more within which an intermediate level exists with a half bandwidth of 0.05 eV or more. The intermediate level is different from an impurity level. The chalcopyrite compound semiconductor includes a first element having first electronegativity of 1.9 or more in Pauling units, the first element occupying a lattice site of the semiconductor. A portion of the first element is substituted with a second element having second electronegativity different from the first electronegativity, the second element being a congeneric element of the first element. The intermediate level is created by substituting the first element with the second element.

摘要翻译： 太阳能电池包括通过连接p型半导体和n型半导体形成的p-n结。 p型半导体是具有1.5eV以上的带隙的黄铜矿化合物半导体，其中存在中等水平，半带宽为0.05eV以上。 中间水平与杂质水平不同。 黄铜矿化合物半导体包括在保罗单元中具有1.9或更高的第一电负性的第一元素，第一元素占据半导体的晶格位置。 第一元件的一部分被具有不同于第一电负性的第二电负性的第二元件取代，第二元素是第一元素的同源元件。 中间级别是通过用第二个元素代替第一个元素来创建的。

公开(公告)号：US20080163928A1

公开(公告)日：2008-07-10

申请号：US11817167

申请日：2006-03-07

申请人： Hans-Josef Sterzel

发明人： Hans-Josef Sterzel

IPC分类号： H01L31/0296 ,  H01L31/04 ,  C23C14/14 ,  H01L31/032 ,  H01L21/00 ,  C23C14/34 ,  C25D7/12

CPC分类号： H01L31/18 ,  H01L31/02963 ,  H01L31/0321 ,  H01L31/1828 ,  Y02E10/543 ,  Y02P70/521

摘要： The invention relates to a photovoltaic cell and to a process for producing a photovoltaic cell comprising a photovoltaically active semiconductor material of the formula (I) or (II): ZnTe   (I) Zn1-xMnxTe   (II) where x is from 0.01 to 0.7, wherein the photovoltaically active semiconductor material comprises a metal halide comprising a metal selected from the group consisting of germanium, tin, antimony, bismuth and copper and a halogen selected from the group consisting of fluorine, chlorine, bromine and iodine

摘要翻译： 本发明涉及一种光伏电池和一种用于生产包括式（I）或（II）的光伏活性半导体材料的光伏电池的方法：<？in-line-formula description =“In-line Formulas”end = “lead”？> ZnTe（I）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead “？”Zn 1-x Mn x Te（II）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中 x为0.01至0.7，其中所述光伏活性半导体材料包括金属卤化物，其包含选自锗，锡，锑，铋和铜的金属和选自氟，氯，溴和 碘

公开(公告)号：US06635942B2

公开(公告)日：2003-10-21

申请号：US09319772

申请日：1999-06-11

申请人： Nunzio La Vecchia

发明人： Nunzio La Vecchia

IPC分类号： H01L3100

CPC分类号： H01L31/0321 ,  H01L31/032

摘要： A semiconductor component (50), in particular a solar cell, which has at least one semiconductor base material (40) consisting of a mono or a polycrystalline structure. The semiconductor base material (40) consists at least in part of pyrite with the chemical composition FeS2 and which is cleaned for the purpose of achieving a defined degree of purity. Maximum benefit is drawn from the semiconductor base material (40) when it is produced from at least one layer of pyrite (51), at least one layer of boron (52) and at least one layer of phosphorous (53). An optimum type is derived from this semiconductor component when it is used as a solar cell.

摘要翻译： 具有至少一个由单结晶或多晶结构构成的半导体基材（40）的半导体部件（50），特别是太阳能电池。 半导体基材（40）至少部分为具有化学成分FeS 2的黄铁矿，并且为了达到确定的纯度而被清洗。 当从至少一层黄铁矿（51），至少一层硼（52）和至少一层磷（53）生产时，从半导体基材（40）获得最大的益处。 当将其用作太阳能电池时，从该半导体组件获得最佳类型。

公开(公告)号：US20230246115A1

公开(公告)日：2023-08-03

申请号：US17789191

申请日：2021-11-24

申请人： ZHEJIANG UNIVERSITY

发明人： DONGSHENG LI ,  DEREN YANG

IPC分类号： H01L31/109 ,  H01L31/032 ,  C23C14/35 ,  C23C14/06

CPC分类号： H01L31/109 ,  H01L31/0321 ,  C23C14/352 ,  C23C14/0688

摘要： The present invention discloses an Er doped Ga2O3 film, together with its preparation method and the application in the field of luminescence. The preparation method contains steps of: (1) the films are deposited by means of Radio-Frequency magnetron sputtering onto the heated substrates after the pre-sputtering for at least 5 minutes, selecting Er doped Ga2O3 target or Er and Ga2O3 targets, with the ambient of Ar and O2; (2) the films as prepared in step (1) are thermally treated at the temperature higher than 300° C. in the ambient of O2 or N2, in order to optically activate Er3+ and crystalize Ga2O3 hosts meanwhile, followed by natural cooling, obtaining the Er doped Ga2O3 films as described. The preparation technology of the present invention is simple, with a good process compatibility. It is believed that the present invention will be widely used in the field of silicon-based integrated light sources, semiconductor luminescence, optical communication, with broad application prospects.

公开(公告)号：US09194958B2

公开(公告)日：2015-11-24

申请号：US14044743

申请日：2013-10-02

申请人： Lawrence Livermore National Security, LLC

发明人： Cedric Rocha Leao ,  Vincenzo Lordi

IPC分类号： H01L31/032 ,  G01T1/16 ,  G01T1/24 ,  C30B15/04 ,  C30B11/04 ,  C30B13/10 ,  C30B29/10 ,  C30B11/06 ,  C30B29/12 ,  H01L31/08

CPC分类号： G01T1/16 ,  C30B11/04 ,  C30B11/06 ,  C30B13/10 ,  C30B15/04 ,  C30B29/10 ,  C30B29/12 ,  G01T1/24 ,  H01L31/0321 ,  H01L31/085

摘要： According to one embodiment, a crystal includes thallium bromide (TlBr), one or more positively charged dopants, and one or more negatively charged dopants. According to another embodiment, a system includes a monolithic crystal including thallium bromide (TlBr), one or more positively charged dopants, and one or more negatively charged dopants; and a detector configured to detect a signal response of the crystal.

摘要翻译： 根据一个实施方案，晶体包括溴化铊（TlBr），一种或多种带正电荷的掺杂剂和一种或多种带负电荷的掺杂剂。 根据另一个实施方案，一种系统包括包括溴化铊（TlBr），一种或多种带正电荷的掺杂剂和一种或多种带负电荷的掺杂剂的单片晶体; 以及被配置为检测晶体的信号响应的检测器。

公开(公告)号：US20140370640A1

公开(公告)日：2014-12-18

申请号：US14471687

申请日：2014-08-28

申请人： Innovalight, Inc.

发明人： Elena Rogojina ,  Maxim Kelman ,  Giuseppe Scardera

IPC分类号： H01L31/18

CPC分类号： H01L31/18 ,  H01B1/06 ,  H01B1/12 ,  H01L21/2225 ,  H01L31/022425 ,  H01L31/0288 ,  H01L31/0321 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A high-fidelity dopant paste is disclosed. The high-fidelity dopant paste includes a solvent, a set of non-glass matrix particles dispersed into the solvent, and a dopant.

摘要翻译： 公开了一种高保真掺杂剂浆料。 高保真掺杂剂浆料包括溶剂，分散在溶剂中的一组非玻璃基质颗粒和掺杂剂。

公开(公告)号：US08802974B2

公开(公告)日：2014-08-12

申请号：US12565849

申请日：2009-09-24

申请人： Yasutaka Nishida ,  Michihiko Inaba ,  Shinya Sakurada ,  Satoshi Itoh

发明人： Yasutaka Nishida ,  Michihiko Inaba ,  Shinya Sakurada ,  Satoshi Itoh

IPC分类号： H01L31/032

CPC分类号： H01L31/0321 ,  H01L31/0296 ,  H01L31/0322 ,  H01L31/0323 ,  H01L31/072 ,  H01L31/073 ,  Y02E10/541 ,  Y02E10/543

摘要： A solar cell includes a p-n junction formed by joining a p-type semiconductor and an n-type semiconductor. The p-type semiconductor is a chalcopyrite compound semiconductor with a band gap of 1.5 eV or more within which an intermediate level exists with a half bandwidth of 0.05 eV or more. The intermediate level is different from an impurity level. The chalcopyrite compound semiconductor includes a first element having first electronegativity of 1.9 or more in Pauling units, the first element occupying a lattice site of the semiconductor. A portion of the first element is substituted with a second element having second electronegativity different from the first electronegativity, the second element being a congeneric element of the first element. The intermediate level is created by substituting the first element with the second element.

摘要翻译： 太阳能电池包括通过连接p型半导体和n型半导体形成的p-n结。 p型半导体是具有1.5eV以上的带隙的黄铜矿化合物半导体，其中存在中等水平，半带宽为0.05eV以上。 中间水平与杂质水平不同。 黄铜矿化合物半导体包括在保罗单元中具有1.9或更高的第一电负性的第一元素，第一元素占据半导体的晶格位置。 第一元件的一部分被具有不同于第一电负性的第二电负性的第二元件取代，第二元素是第一元素的同源元件。 中间级别是通过用第二个元素代替第一个元素来创建的。