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公开(公告)号：US20190198752A1
公开(公告)日：2019-06-27
申请号：US16287974
申请日：2019-02-27
发明人： Zihui Wang , Yiming Huai
IPC分类号： H01L43/08 , H01L29/66 , H01F10/32 , H01F41/30 , H01L27/22 , G11C11/15 , H01L43/10 , H01L43/02 , G11C11/16
CPC分类号： H01L43/08 , B82Y40/00 , G11C11/15 , G11C11/16 , G11C11/161 , H01F10/3286 , H01F10/329 , H01F41/302 , H01L27/228 , H01L29/66984 , H01L43/02 , H01L43/10
摘要： The present invention is directed to a magnetic memory element including a magnetic free layer structure including one or more magnetic free layers that have a same variable magnetization direction substantially perpendicular to layer planes thereof an insulating tunnel junction layer formed adjacent to the magnetic free layer structure; a first magnetic reference layer formed adjacent to the insulating tunnel junction layer opposite the magnetic free layer structure; a second magnetic reference layer separated from the first magnetic reference layer by a magnesium perpendicular enhancement layer; an anti-ferromagnetic coupling layer formed adjacent to the second magnetic reference layer; and a magnetic fixed layer structure formed adjacent to the anti-ferromagnetic coupling layer. The first and second magnetic reference layers have a first invariable magnetization direction substantially perpendicular to layer planes thereof. The magnetic fixed layer structure has a second invariable magnetization direction substantially opposite to the first invariable magnetization direction.
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公开(公告)号：US20190189173A1
公开(公告)日：2019-06-20
申请号：US16326308
申请日：2016-09-30
申请人： INTEL CORPORATION
发明人： Sasikanth MANIPATRUNI , Ian YOUNG , Dmitri NIKONOV
CPC分类号： G11C11/161 , H01L29/66984 , H01L29/82 , H01L43/06 , H03K19/16 , H03K19/18
摘要： Methods and apparatus for complex number generation and operation on a chip are disclosed. A disclosed logic device includes a first magnet with a first preferred direction of magnetization to polarize a spin of electrons in the first direction. The example logic device includes a second magnet with a second preferred direction of magnetization that polarizes a spin of electrons in the second direction. The example logic device includes a third magnet providing a free layer without a preferred direction of magnetization that is connected to the first and second magnets, wherein the third magnet encodes a vector based on a flux of electrons spin polarized in the first direction and a flux of electrons spin polarized in the second direction.
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3.发明申请公开(公告)号：US20180308536A1
公开(公告)日：2018-10-25
申请号：US16017565
申请日：2018-06-25
申请人： Cornell University
IPC分类号： G11C11/16 , H01L43/10 , H01L43/08 , H01L43/06 , H01L43/04 , H01L27/22 , G11C11/18 , H01L29/66
CPC分类号： G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/1697 , G11C11/18 , H01L27/222 , H01L29/66984 , H01L43/04 , H01L43/065 , H01L43/08 , H01L43/10
摘要： Devices or circuits based on spin torque transfer (STT) and Spin Hall effect are disclosed by using a spin Hall effect (SHE) metal layer coupled to a magnetic free layer for various applications. The efficiency or strength of the STT effect based on this combination of SHE and STT can be enhanced by an interface modification between the SHE metal layer and the magnetic free layer or by modifying or engineering the SHE metal layer by doping the SHE metal with certain impurities or other means.
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公开(公告)号：US10079338B2
公开(公告)日：2018-09-18
申请号：US15794983
申请日：2017-10-26
发明人： Yiming Huai , Huadong Gan , Bing K. Yen
IPC分类号： H01L43/08 , H01F10/32 , G11C11/16 , H01L29/66 , H01L43/10 , H01L27/22 , H01F41/30 , H01L43/02 , B82Y40/00
CPC分类号： H01L43/08 , B82Y40/00 , G11C11/15 , G11C11/16 , G11C11/161 , H01F10/3286 , H01F10/329 , H01F41/302 , H01L27/228 , H01L29/66984 , H01L43/02 , H01L43/10
摘要： The present invention is directed to a magnetic memory element including a magnetic free layer structure having a variable magnetization direction perpendicular to a layer plane thereof; an oxide layer formed adjacent to the magnetic free layer structure; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure opposite the oxide layer; a first magnetic reference layer formed adjacent to the insulating tunnel junction layer opposite the magnetic free layer structure; a second magnetic reference layer separated from the first magnetic reference layer by a perpendicular enhancement layer; an antiferromagnetic coupling layer formed adjacent to the second magnetic reference layer; and a magnetic fixed layer structure formed adjacent to the antiferromagnetic coupling layer. The first and second magnetic reference layers have a first invariable magnetization direction substantially perpendicular to layer planes thereof. The magnetic fixed layer structure has a second invariable magnetization direction substantially opposite to the first invariable magnetization direction.
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5.发明申请公开(公告)号：US20180240896A1
公开(公告)日：2018-08-23
申请号：US15898457
申请日：2018-02-17
发明人： Dmitri E. NIKONOV , Christian BINEK , XIA HONG , Jonathan P. BIRD , Kang L. WANG , Peter A. DOWBEN
IPC分类号： H01L29/66 , H01L29/24 , G11C11/16 , G11C11/18 , G11C11/22 , H01F10/32 , H03K19/16 , G11C11/14
CPC分类号： H01L29/66984 , B82Y10/00 , G11C11/14 , G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/18 , G11C11/223 , H01F10/3268 , H01F10/329 , H01L29/08 , H01L29/24 , H01L29/423 , H03K19/16
摘要： Antiferromagnetic magneto-electric spin-orbit read (AFSOR) logic devices are presented. The devices include a voltage-controlled magnetoelectric (ME) layer that switches polarization in response to an electric field from the applied voltage and a narrow channel conductor of a spin-orbit coupling (SOC) material on the ME layer. One or more sources and one or more drains, each optionally formed of ferromagnetic material, are provided on the SOC material.
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6.发明申请公开(公告)号：US20180190894A1
公开(公告)日：2018-07-05
申请号：US15906522
申请日：2018-02-27
申请人： NEC Corporation
IPC分类号： H01L37/00
CPC分类号： H01L37/00 , H01L29/66984 , H01L29/82 , H01L35/00 , H01L35/28 , H01L35/34 , H01L37/02 , H01L37/025 , H01L37/04
摘要： A thermoelectric conversion element includes: a magnetic body having a magnetization; and an electromotive body formed of material exhibiting a spin orbit coupling and jointed to the magnetic body. The magnetic body has an upper joint surface jointed to the electromotive body. The upper joint surface has concavities and convexities.
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公开(公告)号：US09825155B2
公开(公告)日：2017-11-21
申请号：US15038281
申请日：2014-11-19
申请人： TDK CORPORATION
发明人： Tomoyuki Sasaki , Tohru Oikawa
IPC分类号： H01L29/66 , G01R33/09 , H01L29/82 , G11C11/16 , H01L43/08 , H01L43/12 , H01L29/08 , G11B5/39
CPC分类号： H01L29/66984 , G01R33/098 , G11B5/3909 , G11B2005/3996 , G11C11/161 , H01L29/0843 , H01L29/0895 , H01L29/82 , H01L43/08 , H01L43/12
摘要： The magnetoresistive element includes a semiconductor channel layer, a pinned layer disposed on the semiconductor channel layer via a first tunnel layer, a free layer disposed on the semiconductor channel layer via a second tunnel layer, wherein the semiconductor channel layer includes a first region containing an interface with the first tunnel layer, a second region containing an interface with the second tunnel layer, and a third region, impurity concentrations in the first and second regions are higher than 1×1019 cm−3, an impurity concentration in the third region is 1×1019 cm−3 or less, the first and second regions are separated by the third region, and the impurity concentrations in the first and second regions decrease in the thickness direction of the semiconductor channel layer from the interface between the semiconductor channel layer and the first tunnel layer and the interface between the semiconductor channel layer and the second tunnel layer.
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公开(公告)号：US20170256633A1
公开(公告)日：2017-09-07
申请号：US15431488
申请日：2017-02-13
发明人： Ki Suk LEE , Dae Han JEONG , Hee Sung HAN , Nam Kyu KIM
CPC分类号： H01L29/66984 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L29/30 , H01L29/82 , H01L43/00
摘要： The present disclosure provides a skyrmion diode using skyrmions as information carriers. The skyrmion diode includes a magnetic body and a conductive body. The magnetic body has a skyrmion which is used as information carrier. The conductive body is disposed on or under the magnetic body. The conductive body includes a Dzyaloshinskii-Moriya interaction (DMI) region and a defect region. The DMI region is provided to induce DMI in a region of the magnetic body corresponding to the DMI region by the spin-orbit coupling of the conductive body and magnetic moments of the magnetic body. The defect region is provided to prevent the DMI from being induced in a region of the magnetic body corresponding to the defect region.
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9.发明申请公开(公告)号：US20170178705A1
公开(公告)日：2017-06-22
申请号：US15327017
申请日：2015-07-17
申请人： Cornell University
CPC分类号： G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/1697 , G11C11/18 , H01L27/222 , H01L29/66984 , H01L43/04 , H01L43/065 , H01L43/08 , H01L43/10
摘要： Devices or circuits based on spin torque transfer (STT) and Spin Hall effect are disclosed by using a spin Hall effect (SHE) metal layer coupled to a magnetic free layer for various applications. The efficiency or strength of the STT effect based on this combination of SHE and STT can be enhanced by an interface modification between the SHE metal layer and the magnetic free layer or by modifying or engineering the SHE metal layer by doping the SHE metal with certain impurities or other means.
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10.发明授权公开(公告)号：US09614063B2
公开(公告)日：2017-04-04
申请号：US14629939
申请日：2015-02-24
申请人： Adam L. Friedman , Olaf M. T. van 't Erve , Connie H. Li , Jeremy T. Robinson , Berend T. Jonker
发明人： Adam L. Friedman , Olaf M. T. van 't Erve , Connie H. Li , Jeremy T. Robinson , Berend T. Jonker
IPC分类号： H01L29/66 , H01L21/308 , H01L29/16 , H01L29/45 , H01L29/423 , H01L21/02
CPC分类号： H01L29/66984 , H01L21/02115 , H01L21/02227 , H01L21/02293 , H01L21/02527 , H01L21/042 , H01L21/043 , H01L21/3081 , H01L29/1606 , H01L29/167 , H01L29/4236 , H01L29/45
摘要： This disclosure describes a method of making a tunnel barrier-based electronic device, in which the tunnel barrier and transport channel are made of the same material—graphene. A homoepitaxial tunnel barrier/transport device is created using a monolayer chemically modified graphene sheet as a tunnel barrier on another monolayer graphene sheet. This device displays enhanced spintronic properties over heteroepitaxial devices and is the first to use graphene as both the tunnel barrier and channel.
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