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1.发明授权公开(公告)号：US12133471B2
公开(公告)日：2024-10-29
申请号：US18238481
申请日：2023-08-26
发明人： Zihui Wang , Yiming Huai
IPC分类号： H10N50/10 , B82Y40/00 , G11C11/15 , G11C11/16 , H01F10/32 , H01F41/30 , H01L29/66 , H10B61/00 , H10N50/80 , H10N50/85
CPC分类号： H10N50/10 , G11C11/15 , G11C11/16 , G11C11/161 , H01F10/3286 , H01F10/329 , H01F41/302 , H01L29/66984 , H10B61/22 , H10N50/80 , H10N50/85 , B82Y40/00
摘要： A magnetic memory element including first and second magnetic free layers having a variable magnetization direction substantially perpendicular to layer planes thereof; a first perpendicular enhancement layer (PEL) interposed between the first and second magnetic free layers; first and second magnetic reference layers having a first invariable magnetization direction substantially perpendicular to layer planes thereof; a second PEL interposed between the first and second magnetic reference layers; an insulating tunnel junction layer formed between the first magnetic free layer and reference layer; an anti-ferromagnetic coupling layer formed adjacent to the second magnetic reference layer; a magnetic fixed layer formed adjacent to the anti-ferromagnetic coupling layer and having a second invariable magnetization direction substantially opposite to the first invariable magnetization direction; a non-magnetic layer comprising oxygen and a transition metal and formed adjacent to the second magnetic free layer; and a magnesium oxide layer formed adjacent to the non-magnetic layer.
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公开(公告)号：US20240268125A1
公开(公告)日：2024-08-08
申请号：US18106159
申请日：2023-02-06
发明人： Zhiqiang Wei , Zihui Wang , Ebrahim Abedifard , Yiming Huai
IPC分类号： H10B61/00 , H01L23/528 , H10N50/10
CPC分类号： H10B61/22 , H01L23/5283 , H10N50/10
摘要： The present invention is directed to a nonvolatile memory device including a plurality of first conductive lines extending along a first direction; first and second plurality of second conductive lines extending along a second direction; an array of active regions, each active region having an elongated shape directed along a third direction substantially bisecting an angle formed between the first and second directions and including first and second drains formed at opposite ends thereof; and an array of first memory elements and an array of second memory elements formed at different levels, each first memory element and each second memory element being electrically connected to a respective first drain and a respective second drain, respectively. The first and second plurality of second conductive lines are electrically connected to the array of first memory elements and the array of second memory elements along the second direction, respectively.
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公开(公告)号：US11848039B2
公开(公告)日：2023-12-19
申请号：US17227294
申请日：2021-04-10
发明人： Zhiqiang Wei , Kimihiro Satoh , Woojin Kim , Zihui Wang
CPC分类号： G11C11/161 , H10B61/10 , H10N50/10 , H10N50/80 , H10N50/85
摘要： The present invention is directed to a magnetic memory cell including a magnetic tunnel junction (MTJ) memory element and a two-terminal bidirectional selector coupled in series between two conductive lines. The MTJ memory element includes a magnetic free layer; a magnetic reference layer; and an insulating tunnel junction layer interposed therebetween. The two-terminal bidirectional selector includes a bottom electrode; a top electrode; a load-resistance layer interposed between the bottom and top electrodes and comprising a first tantalum oxide; a first volatile switching layer interposed between the bottom and top electrodes and comprising a metal dopant and a second tantalum oxide that has a higher oxygen content than the first tantalum oxide; and a second volatile switching layer in contact with the first volatile switching layer and comprising a third tantalum oxide that has a higher oxygen content than the first tantalum oxide.
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公开(公告)号：US11610616B2
公开(公告)日：2023-03-21
申请号：US16900470
申请日：2020-06-12
发明人： Dean K. Nobunaga
摘要： The present invention is directed to a nonvolatile memory device including a plurality of memory cells arranged in rows and columns, a plurality of word lines with each connected to a respective row of the memory cells along a row direction, a plurality of bit lines with each connected to a respective column of the memory cells along a column direction; a column decoder connected to the bit lines; a plurality of sense amplifiers connected to the column decoder; and a plurality of sense amplifier control circuits. Each of the sense amplifiers is connected to a unique one of the sense amplifier control circuits. Each of the sense amplifier control circuits includes a current detector circuit for detecting a sensing current, a current booster circuit for boosting the sensing current, and a timer circuit for providing a delayed trigger for a respective one of the sense amplifiers connected thereto.
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公开(公告)号：US11538857B2
公开(公告)日：2022-12-27
申请号：US16836922
申请日：2020-04-01
发明人： Zhiqiang Wei , Hongxin Yang
摘要： The present invention is directed to a magnetic memory cell including a magnetic tunnel junction (MTJ) memory element and a two-terminal bidirectional selector coupled in series between two conductive lines. The MTJ memory element includes a magnetic free layer, a magnetic reference layer, and an insulating tunnel junction layer interposed therebetween. The two-terminal bidirectional selector includes bottom and top electrodes, first and third volatile switching layers interposed between the bottom and top electrodes, and a second volatile switching layer interposed between the first and third volatile switching layers. The bottom and top electrodes each independently include one of titanium nitride or iridium. The first and third volatile switching layers each include tantalum oxide and silver. The second volatile switching layer includes hafnium oxide and has a higher electrical resistance than the first and third volatile switching layers.
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公开(公告)号：US20220383920A9
公开(公告)日：2022-12-01
申请号：US17227294
申请日：2021-04-10
发明人： Zhiqiang Wei , Kimihiro Satoh , Woojin Kim , Zihui Wang
摘要： The present invention is directed to a magnetic memory cell including a magnetic tunnel junction (MTJ) memory element and a two-terminal bidirectional selector coupled in series between two conductive lines. The MTJ memory element includes a magnetic free layer; a magnetic reference layer; and an insulating tunnel junction layer interposed therebetween. The two-terminal bidirectional selector includes a bottom electrode; a top electrode; a load-resistance layer interposed between the bottom and top electrodes and comprising a first tantalum oxide; a first volatile switching layer interposed between the bottom and top electrodes and comprising a metal dopant and a second tantalum oxide that has a higher oxygen content than the first tantalum oxide; and a second volatile switching layer in contact with the first volatile switching layer and comprising a third tantalum oxide that has a higher oxygen content than the first tantalum oxide.
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公开(公告)号：US11211107B1
公开(公告)日：2021-12-28
申请号：US17031542
申请日：2020-09-24
发明人： Thinh Tran , Ebrahim Abedifard
IPC分类号： G11C11/16
摘要： The present invention is directed to a nonvolatile memory device that includes a plurality of memory slices, each memory slice including one or more memory sectors and a read circuit for sensing the resistance state of a magnetic memory cell in the memory sectors. The read circuit includes first and second input nodes; a sense amplifier having first and second input terminals; a first target resistor and a balancing resistor connected in series between the first input node and the first input terminal; a multiplexer having a first input, a second input, and an output, with the first input being connected to the second input node and the output being connected to the second input terminal; a second target resistor and an offset resistor connected in series between the second input node and the second input; and first and second current sources connected to the first and second input terminals, respectively.
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公开(公告)号：US20210312964A1
公开(公告)日：2021-10-07
申请号：US17227294
申请日：2021-04-10
发明人： Zhiqiang Wei , Kimihiro Satoh , Woojin Kim , Zihui Wang
摘要： The present invention is directed to a magnetic memory cell including a magnetic tunnel junction (MTJ) memory element and a two-terminal bidirectional selector coupled in series between two conductive lines. The MTJ memory element includes a magnetic free layer; a magnetic reference layer; and an insulating tunnel junction layer interposed therebetween. The two-terminal bidirectional selector includes a bottom electrode; a top electrode; a load-resistance layer interposed between the bottom and top electrodes and comprising a first tantalum oxide; a first volatile switching layer interposed between the bottom and top electrodes and comprising a metal dopant and a second tantalum oxide that has a higher oxygen content than the first tantalum oxide; and a second volatile switching layer in contact with the first volatile switching layer and comprising a third tantalum oxide that has a higher oxygen content than the first tantalum oxide.
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公开(公告)号：US11127787B2
公开(公告)日：2021-09-21
申请号：US16793349
申请日：2020-02-18
发明人： Hongxin Yang , Bing K. Yen , Jing Zhang
摘要： The present invention is directed to a memory cell that includes a magnetic tunnel junction (MTJ) memory element and a two-terminal selector element coupled in series. The MTJ memory element includes a magnetic free layer structure and a magnetic reference layer structure with an insulating tunnel junction layer interposed therebetween. The magnetic reference layer structure includes one or more magnetic reference layers having a first invariable magnetization direction substantially perpendicular to layer planes thereof. The two-terminal selector element includes a first inert electrode and a second inert electrode with a volatile switching layer interposed therebetween; a first active electrode formed adjacent to the first inert electrode; and a second active electrode formed adjacent to the second inert electrode. The volatile switching layer includes at least one conductor layer interleaved with insulating layers.
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公开(公告)号：US10559624B2
公开(公告)日：2020-02-11
申请号：US15438631
申请日：2017-02-21
发明人： Hongxin Yang , Xiaojie Hao , Jing Zhang , Xiaobin Wang , Bing K. Yen
摘要： The present invention is directed to a memory cell that includes a magnetic tunnel junction (MTJ) memory element, which has a low resistance state and a high resistance state, and a two-terminal selector coupled to the MTJ memory element in series. The MTJ memory element includes a magnetic free layer and a magnetic reference layer with an insulating tunnel junction layer interposed therebetween. The two-terminal selector has an insulative state and a conductive state. The two-terminal selector in the conductive state has substantially lower resistance when switching the MTJ memory element from the low to high resistance state than from the high to low resistance state. The voltages applied to the memory cell to respectively switch the MTJ memory element from the low to high resistance state and from the high to low resistance state may be substantially same.
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