公开(公告)号：US12133472B2

公开(公告)日：2024-10-29

申请号：US17463522

申请日：2021-08-31

申请人： KIOXIA CORPORATION

发明人： Katsuhiko Koui ,  Masaru Toko ,  Soichi Oikawa ,  Hideyuki Sugiyama

IPC分类号： H10N50/80 ,  H01F10/32 ,  H10B61/00 ,  H10N50/10 ,  H10N50/85

CPC分类号： H10N50/80 ,  H01F10/3259 ,  H01F10/3272 ,  H01F10/3286 ,  H10B61/00 ,  H10N50/10 ,  H10N50/85

摘要： A magnetic storage device includes a magnetoresistance effect element including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a non-magnetic layer between the first and second magnetic layers. The first magnetic layer includes a first layer that is magnetic, a second layer that is magnetic and farther from the non-magnetic layer than the first layer, and a third layer between the first and second layers. The third layer includes a first portion formed of an insulating material or a semiconductor material and a plurality of second portions surrounded by the first portion and formed of a conductive material.

公开(公告)号：US20240357941A1

公开(公告)日：2024-10-24

申请号：US18763018

申请日：2024-07-03

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： William J. Gallagher

IPC分类号： H10N50/01 ,  H01F10/32 ,  H01F41/34 ,  H01L21/033 ,  H10B61/00 ,  H10N50/80

CPC分类号： H10N50/01 ,  H01F41/34 ,  H01L21/0332 ,  H10B61/00 ,  H10N50/80 ,  H01F10/3254 ,  H01F10/329

摘要： Some examples relate to an integrated circuit. The integrated circuit comprises a semiconductor substrate, a bottom electrode over the substrate, a circular magnetic tunneling junction (MTJ) disposed over an upper surface of bottom electrode, and a circular top electrode disposed over an upper surface of the magnetic tunneling junction. The circular top electrode is concentric to the circular magnetic tunneling junction, and a diameter of the circular magnetic tunneling junction is smaller than 60 nm or smaller than 30 nm.

公开(公告)号：US12127413B2

公开(公告)日：2024-10-22

申请号：US18113070

申请日：2023-02-23

申请人： UNITED MICROELECTRONICS CORP.

发明人： Kun-Ju Li ,  Tai-Cheng Hou ,  Hsin-Jung Liu ,  Fu-Yu Tsai ,  Bin-Siang Tsai ,  Chau-Chung Hou ,  Yu-Lung Shih ,  Ang Chan ,  Chih-Yueh Li ,  Chun-Tsen Lu

IPC分类号： H10B61/00 ,  G11C11/16 ,  H01F10/32 ,  H01F41/34 ,  H10N50/01 ,  H10N50/80

CPC分类号： H10B61/00 ,  G11C11/161 ,  H01F10/3254 ,  H01F41/34 ,  H10N50/01 ,  H10N50/80

摘要： A semiconductor device includes a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate, a first ultra low-k (ULK) dielectric layer on the first MTJ and the second MTJ, a passivation layer on the first ULK dielectric layer, and a second ULK dielectric layer on the passivation layer. Preferably, the first ULK dielectric layer includes a first thickness, the passivation layer between the first MTJ and the second MTJ includes a second thickness, the passivation layer on top of the first MTJ includes a third thickness, and the second thickness is greater than the third thickness

公开(公告)号：US20240347252A1

公开(公告)日：2024-10-17

申请号：US18034466

申请日：2022-06-09

申请人： TDK CORPORATION

发明人： Tomoyuki SASAKI ,  Tatsuo SHIBATA ,  Katsuyuki NAKADA

IPC分类号： H01F10/32 ,  H01F17/00

CPC分类号： H01F10/3254 ,  H01F17/00

摘要： A spin inductor includes a laminated body having a first inductor layer, a spacer layer, and a second inductor layer. The first inductor layer includes a first wiring layer, and a first ferromagnetic layer in contact with the first wiring layer. The second inductor layer includes a second wiring layer, and a second ferromagnetic layer in contact with the second wiring layer. The spacer layer is sandwiched between the first ferromagnetic layer and the second wiring layer.

公开(公告)号：US20240334840A1

公开(公告)日：2024-10-03

申请号：US18742115

申请日：2024-06-13

申请人： Samsung Electronics Co., Ltd.

发明人： Kwangseok KIM ,  Seonggeon PARK ,  Seungjae LEE ,  Naoki HASE

IPC分类号： H10N50/10 ,  G11C11/16 ,  H01F10/32 ,  H10B61/00 ,  H10N50/85

CPC分类号： H10N50/10 ,  G11C11/161 ,  H01F10/3286 ,  H10B61/00 ,  H10N50/85

摘要： Provided are a magnetic tunneling junction device having more stable perpendicular magnetic anisotropy (PMA) and/or increased operating speed, and/or a memory device including the magnetic tunneling junction device. The magnetic tunneling junction device includes a free layer having a first surface and a second surface opposite the first surface; a pinned layer facing the first surface of the free layer; a first oxide layer between the pinned layer and the free layer; and a second oxide layer on the second surface of the free layer. The free layer includes a magnetic material X doped with a non-magnetic metal. The second oxide layer includes ZOx which is an oxide of a metal Z. An oxygen affinity of the metal Z is greater than an oxygen affinity of the non-magnetic metal X.

公开(公告)号：US12108684B2

公开(公告)日：2024-10-01

申请号：US17315345

申请日：2021-05-09

申请人： HeFeChip Corporation Limited

发明人： Qinli Ma ,  Wei-Chuan Chen ,  Youngsuk Choi ,  Shu-Jen Han

IPC分类号： H10N50/80 ,  G11C11/16 ,  H01F10/32 ,  H10B61/00 ,  H10N50/85

CPC分类号： H10N50/80 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/329 ,  H10B61/22 ,  H10N50/85 ,  H01F10/3286

摘要： A magnetic tunneling junction (MTJ) element includes a reference layer, a tunnel barrier layer on the reference layer, a free layer on the tunnel barrier layer, and a composite capping layer on the free layer. The composite capping layer comprises a diffusion-stop layer on the free layer, a light-element sink layer on the diffusion-stop layer, and an amorphous layer on the light-element sink layer.

公开(公告)号：US20240315147A1

公开(公告)日：2024-09-19

申请号：US18677654

申请日：2024-05-29

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Ji-Feng YING ,  Jhong-Sheng WANG ,  Tsann LIN

IPC分类号： H10N50/80 ,  G11C11/16 ,  H01F10/32 ,  H10B61/00 ,  H10N50/01 ,  H10N50/85 ,  H10N52/80

CPC分类号： H10N50/80 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/329 ,  H10B61/22 ,  H10N50/01 ,  H10N50/85 ,  H10N52/80

摘要： A magnetic memory includes a first spin-orbital-transfer-spin-torque-transfer (SOT-STT) hybrid magnetic device disposed over a substrate, a second SOT-STT hybrid magnetic device disposed over the substrate, and a SOT conductive layer connected to the first and second SOT-STT hybrid magnetic devices. Each of the first and second SOT-STT hybrid magnetic devices includes a first magnetic layer, as a magnetic free layer, a spacer layer disposed under the first magnetic layer, and a second magnetic layer, as a magnetic reference layer, disposed under the spacer layer. The SOT conductive layer is disposed over the first magnetic layer of each of the first and second SOT-STT hybrid magnetic devices.

公开(公告)号：US20240306513A1

公开(公告)日：2024-09-12

申请号：US18664928

申请日：2024-05-15

申请人： Everspin Technologies, Inc.

发明人： Sanjeev AGGARWAL ,  Sarin DESHPANDE ,  Kerry NAGLE ,  Santosh KARRE

IPC分类号： H10N50/01 ,  H01F10/32 ,  H10B61/00 ,  H10N50/80

CPC分类号： H10N50/01 ,  H10N50/80 ,  H01F10/3254 ,  H01F10/3272 ,  H10B61/00

摘要： A magnetoresistive element may include a via providing an electrical connection between one or more metal regions and magnetoresistive devices. The via may include a transition metal layer, a tantalum-rich layer, and/or a cap layer. The transition metal layer may be formed by atomic layer deposition. Additionally, one or more layers of the via may be formed in the trench etched in one or more interlevel dielectric layers. The via may have an aspect ratio less than or equal to 2. The via may have a diameter less than or equal than a diameter of the magnetoresistive device electrically connected to one or more metal regions by the via.

公开(公告)号：US12080459B2

公开(公告)日：2024-09-03

申请号：US17847099

申请日：2022-06-22

申请人： Samsung Electronics Co., Ltd.

发明人： Jeongchun Ryu ,  Seungjae Lee ,  Naoki Hase ,  Kwangseok Kim

IPC分类号： G11C11/16 ,  H01F10/32 ,  H10B61/00 ,  H10N50/10 ,  H10N50/85

CPC分类号： H01F10/3272 ,  G11C11/161 ,  H01F10/3286 ,  H10B61/00 ,  H10N50/10 ,  H10N50/85

摘要： A synthetic antiferromagnet includes a first ferromagnetic layer having a first surface; a second ferromagnetic layer having a second surface facing the first surface of the first ferromagnetic layer; and a first non-magnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer, wherein the first ferromagnetic layer has an inclined perpendicular magnetic anisotropy (PMA) in which a magnetization direction of the first ferromagnetic layer is inclined from a first direction perpendicular to the first surface and the second surface, a component in a first direction of the magnetization direction of the first ferromagnetic layer and a component in a first direction of a magnetization direction of the second ferromagnetic layer are opposite to each other.

公开(公告)号：US20240290368A1

公开(公告)日：2024-08-29

申请号：US18587140

申请日：2024-02-26

申请人： IMEC VZW

发明人： Sofie Mertens ,  Kiroubanand Sankaran ,  Xiaoyu Piao ,  Robert Carpenter

IPC分类号： G11C11/16 ,  H01F10/32 ,  H10B61/00 ,  H10N50/01 ,  H10N50/10 ,  H10N50/85

CPC分类号： G11C11/161 ,  H01F10/3272 ,  H10B61/00 ,  H10N50/01 ,  H10N50/10 ,  H10N50/85

摘要： The disclosed technology generally relates to a stack for a magnetic random access memory device, for example, a stack including a magnetic tunnel junction with a high tunneling magnetoresistance ratio. In one aspect, the stack includes a substrate layer, a first electrode layer arranged on the substrate layer, and seed metal layer arranged on the first electrode layer, each layer having a [001] or [010] or [100] in-plane texture. The stack further includes a magnetic free layer arranged on the seed metal layer, a crystalline tunnel barrier layer arranged on the free layer, a magnetic reference layer arranged on the crystalline tunnel barrier layer, a pinning layer arranged on the reference layer, and a second electrode layer arranged on the pinning layer.