公开(公告)号：US12080459B2

公开(公告)日：2024-09-03

申请号：US17847099

申请日：2022-06-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeongchun Ryu ,  Seungjae Lee ,  Naoki Hase ,  Kwangseok Kim

IPC: G11C11/16 ,  H01F10/32 ,  H10B61/00 ,  H10N50/10 ,  H10N50/85

CPC classification number: H01F10/3272 ,  G11C11/161 ,  H01F10/3286 ,  H10B61/00 ,  H10N50/10 ,  H10N50/85

Abstract: A synthetic antiferromagnet includes a first ferromagnetic layer having a first surface; a second ferromagnetic layer having a second surface facing the first surface of the first ferromagnetic layer; and a first non-magnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer, wherein the first ferromagnetic layer has an inclined perpendicular magnetic anisotropy (PMA) in which a magnetization direction of the first ferromagnetic layer is inclined from a first direction perpendicular to the first surface and the second surface, a component in a first direction of the magnetization direction of the first ferromagnetic layer and a component in a first direction of a magnetization direction of the second ferromagnetic layer are opposite to each other.

公开(公告)号：US20220130581A1

公开(公告)日：2022-04-28

申请号：US17350157

申请日：2021-06-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Younghyun Kim ,  Sechung Oh ,  Naoki Hase ,  Heeju Shin ,  Junghwan Park

IPC: H01F10/32 ,  H01L43/02 ,  H01L27/22

Abstract: A magnetic device includes a fixed layer including a fixed pattern, a free layer, and a tunnel barrier between the fixed layer and the free layer. The fixed pattern includes a first magnetic pattern, a second magnetic pattern, and a hybrid spacer, including a nonmagnetic material layer, between the first magnetic pattern and the second magnetic pattern, the nonmagnetic material including a plurality of magnetic nanoparticles dispersed therein.

公开(公告)号：US11935677B2

公开(公告)日：2024-03-19

申请号：US17350157

申请日：2021-06-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Younghyun Kim ,  Sechung Oh ,  Naoki Hase ,  Heeju Shin ,  Junghwan Park

IPC: H01F10/32 ,  G11C11/16 ,  H01F1/00 ,  H10B61/00 ,  H10N50/10 ,  H10N50/80 ,  H10N50/85

CPC classification number: H01F10/3254 ,  H01F1/0063 ,  H01F10/3272 ,  H01F10/329 ,  H10B61/22 ,  H10N50/10 ,  H10N50/80 ,  G11C11/161 ,  H10N50/85

Abstract: A magnetic device includes a fixed layer including a fixed pattern, a free layer, and a tunnel barrier between the fixed layer and the free layer. The fixed pattern includes a first magnetic pattern, a second magnetic pattern, and a hybrid spacer, including a nonmagnetic material layer, between the first magnetic pattern and the second magnetic pattern, the nonmagnetic material including a plurality of magnetic nanoparticles dispersed therein.

公开(公告)号：US12150387B2

公开(公告)日：2024-11-19

申请号：US17982955

申请日：2022-11-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwangseok Kim ,  Seonggeon Park ,  Seungjae Lee ,  Naoki Hase

IPC: H10N50/10 ,  H10B61/00 ,  H10N50/80 ,  H10N50/85

Abstract: Provided are a magnetic tunneling junction device having more stable perpendicular magnetic anisotropy (PMA) and/or increased operating speed, and/or a memory device including the magnetic tunneling junction device. The magnetic tunneling junction device includes a free layer having a first surface and a second surface opposite the first surface; a pinned layer facing the first surface of the free layer; a first oxide layer between the pinned layer and the free layer; and a second oxide layer on the second surface of the free layer. The free layer includes a magnetic material X doped with a non-magnetic metal/ The second oxide layer includes ZOx which is an oxide of a metal Z. An oxygen affinity of the metal Z is greater than an oxygen affinity of the non-magnetic metal X.

公开(公告)号：US12052930B2

公开(公告)日：2024-07-30

申请号：US17701056

申请日：2022-03-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwangseok Kim ,  Seonggeon Park ,  Seungjae Lee ,  Naoki Hase

IPC: H10N50/10 ,  G11C11/16 ,  H01F10/32 ,  H10B61/00 ,  H10N50/85

CPC classification number: H10N50/10 ,  G11C11/161 ,  H01F10/3286 ,  H10B61/00 ,  H10N50/85

Abstract: Provided are a magnetic tunneling junction device having more stable perpendicular magnetic anisotropy (PMA) and/or increased operating speed, and/or a memory device including the magnetic tunneling junction device. The magnetic tunneling junction device includes a free layer having a first surface and a second surface opposite the first surface; a pinned layer facing the first surface of the free layer; a first oxide layer between the pinned layer and the free layer; and a second oxide layer on the second surface of the free layer. The free layer includes a magnetic material X doped with a non-magnetic metal/ The second oxide layer includes ZOx which is an oxide of a metal Z. An oxygen affinity of the metal Z is greater than an oxygen affinity of the non-magnetic metal X.