公开(公告)号：US20240213024A1

公开(公告)日：2024-06-27

申请号：US18418976

申请日：2024-01-22

申请人： AKHAN Semiconductor, Inc.

发明人： Adam Khan

IPC分类号： H01L21/04 ,  H01L21/02 ,  H01L21/285 ,  H01L21/324 ,  H01L21/768 ,  H01L29/16 ,  H01L29/36 ,  H01L29/66 ,  H01L29/868

CPC分类号： H01L21/043 ,  H01L21/02425 ,  H01L21/02527 ,  H01L21/0415 ,  H01L21/042 ,  H01L21/0435 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/324 ,  H01L21/76871 ,  H01L29/1602 ,  H01L29/36 ,  H01L29/6603 ,  H01L29/868

摘要： Disclosed herein is a new and improved system and method for fabricating diamond semiconductors. The method may include the steps of selecting a diamond semiconductor material having a surface, exposing the surface to a source gas in an etching chamber, forming a carbide interface contact layer on the surface; and forming a metal layer on the interface layer.

公开(公告)号：US20240063021A1

公开(公告)日：2024-02-22

申请号：US18498756

申请日：2023-10-31

申请人： AKHAN Semiconductor, Inc.

发明人： Adam Khan

IPC分类号： H01L21/04 ,  H01L21/02 ,  H01L21/3065 ,  H01L29/06 ,  H01L29/16 ,  H01L29/66 ,  H01L29/78 ,  H01L29/868 ,  H01L31/028 ,  H01L33/34

CPC分类号： H01L21/0415 ,  H01L21/02085 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02444 ,  H01L21/02488 ,  H01L21/02527 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/043 ,  H01L21/3065 ,  H01L29/06 ,  H01L29/1602 ,  H01L29/6603 ,  H01L29/66045 ,  H01L29/78 ,  H01L29/868 ,  H01L31/028 ,  H01L33/34 ,  H01L33/005

摘要： Disclosed herein is a new and improved system and method for fabricating diamond films by first seeding a surface of a transparent substrate. A diamond layer that is at least one of nanocrystalline and ultrananocrystalline can be deposited upon the surface of the transparent substrate and both the diamond layer and the transparent substrate modified to incorporate substitutional atoms.

公开(公告)号：US20170271602A1

公开(公告)日：2017-09-21

申请号：US15613364

申请日：2017-06-05

申请人： International Business Machines Corporation

发明人： Anthony J. Annunziata ,  Ching-Tzu Chen ,  Joel D. Chudow

IPC分类号： H01L51/05 ,  H01L29/06 ,  H01L21/02 ,  H01L21/283 ,  H01L29/20 ,  H01L29/66 ,  H01L21/04 ,  H01L51/00 ,  H01L21/441 ,  H01L29/786 ,  H01L29/24

CPC分类号： H01L51/0541 ,  G01N27/414 ,  G01N27/4141 ,  G01N27/4146 ,  H01L21/02527 ,  H01L21/0254 ,  H01L21/02568 ,  H01L21/02606 ,  H01L21/043 ,  H01L21/283 ,  H01L21/441 ,  H01L21/7682 ,  H01L23/53276 ,  H01L28/60 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/1606 ,  H01L29/2003 ,  H01L29/24 ,  H01L29/66045 ,  H01L29/66969 ,  H01L29/778 ,  H01L29/78684 ,  H01L29/78696 ,  H01L43/08 ,  H01L51/0048 ,  H01L51/0558 ,  H01L2221/1094

摘要： Embodiments of the invention include a method for fabricating a semiconductor device and the resulting structure. A substrate is provided. A plurality of metal portions are formed on the substrate, wherein the plurality of metal portions are arranged such that areas of the substrate remain exposed. A thin film layer is deposited on the plurality of metal portions and the exposed areas of the substrate. A dielectric layer is deposited, wherein the dielectric layer is in contact with portions of the thin film layer on the plurality of metal portions, and wherein the dielectric layer is not in contact with portions of the thin film layer on the exposed areas of the substrate such that one or more enclosed spaces are present between the thin film layer on the exposed areas of the substrate and the dielectric layer.

公开(公告)号：US20170263726A1

公开(公告)日：2017-09-14

申请号：US15326399

申请日：2016-02-03

申请人： BOE TECHNOLOGY GROUP CO., LTD.

发明人： Yongchao Huang

IPC分类号： H01L29/49 ,  G02F1/1362 ,  G02F1/1343 ,  H01L29/786 ,  H01L29/66 ,  H01L29/167 ,  H01L29/40 ,  H01L27/12 ,  H01L21/04 ,  H01L21/02 ,  G02F1/1368 ,  H01L29/16

CPC分类号： H01L29/4908 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/1362 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2201/121 ,  G02F2201/123 ,  G02F2202/10 ,  H01L21/02527 ,  H01L21/0259 ,  H01L21/0262 ,  H01L21/043 ,  H01L21/044 ,  H01L27/124 ,  H01L27/3262 ,  H01L29/1606 ,  H01L29/167 ,  H01L29/408 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/458 ,  H01L29/66045 ,  H01L29/78606 ,  H01L29/78684 ,  H01L51/5206

摘要： The present disclosure provides a thin film transistor, a method for producing the same, an array substrate and a display apparatus. An electrode of the thin film transistor is made of Cu or Cu alloy, and an anti-oxidization layer is used to prevent oxidization of Cu. The thin film transistor includes a gate electrode, a gate insulation layer, a semiconductor active layer, a source electrode and a drain electrode provided on a base substrate, wherein the gate electrode and/or the drain and source electrodes is/are made of Cu or Cu alloy. The thin film transistor further includes an anti-oxidization layer made of a topological insulator material, the anti-oxidization layer being provided above and in contact with the gate electrode and/or the source and drain electrodes made of Cu or Cu alloy.

公开(公告)号：US20170194468A1

公开(公告)日：2017-07-06

申请号：US15463229

申请日：2017-03-20

申请人： Adam L. Friedman ,  Olaf M. T. van 't Erve ,  Connie H. Li ,  Jeremy T. Robinson ,  Berend T. Jonker

发明人： Adam L. Friedman ,  Olaf M. T. van 't Erve ,  Connie H. Li ,  Jeremy T. Robinson ,  Berend T. Jonker

IPC分类号： H01L29/66 ,  H01L21/04 ,  H01L29/45 ,  H01L29/167 ,  H01L21/02 ,  H01L29/16

CPC分类号： H01L29/66984 ,  H01L21/02115 ,  H01L21/02227 ,  H01L21/02293 ,  H01L21/02527 ,  H01L21/042 ,  H01L21/043 ,  H01L21/3081 ,  H01L29/1606 ,  H01L29/167 ,  H01L29/4236 ,  H01L29/45

摘要： This disclosure describes a method of making a tunnel barrier-based electronic device, in which the tunnel barrier and transport channel are made of the same material—graphene. A homoepitaxial tunnel barrier/transport device is created using a monolayer chemically modified graphene sheet as a tunnel barrier on another monolayer graphene sheet. This device displays enhanced spintronic properties over heteroepitaxial devices and is the first to use graphene as both the tunnel barrier and channel.

公开(公告)号：US09698254B1

公开(公告)日：2017-07-04

申请号：US15463229

申请日：2017-03-20

申请人： Adam L. Friedman ,  Olaf M. T. van 't Erve ,  Connie H. Li ,  Jeremy T. Robinson ,  Berend T. Jonker

发明人： Adam L. Friedman ,  Olaf M. T. van 't Erve ,  Connie H. Li ,  Jeremy T. Robinson ,  Berend T. Jonker

IPC分类号： H01L29/66 ,  H01L21/02 ,  H01L29/16 ,  H01L29/45 ,  H01L29/167 ,  H01L21/04

CPC分类号： H01L29/66984 ,  H01L21/02115 ,  H01L21/02227 ,  H01L21/02293 ,  H01L21/02527 ,  H01L21/042 ,  H01L21/043 ,  H01L21/3081 ,  H01L29/1606 ,  H01L29/167 ,  H01L29/4236 ,  H01L29/45

摘要： This disclosure describes a method of making a tunnel barrier-based electronic device, in which the tunnel barrier and transport channel are made of the same material—graphene. A homoepitaxial tunnel barrier/transport device is created using a monolayer chemically modified graphene sheet as a tunnel barrier on another monolayer graphene sheet. This device displays enhanced spintronic properties over heteroepitaxial devices and is the first to use graphene as both the tunnel barrier and channel.

公开(公告)号：US20160284813A1

公开(公告)日：2016-09-29

申请号：US15166863

申请日：2016-05-27

申请人： FUJITSU LIMITED

发明人： Daiyu KONDO ,  Shintaro SATO

IPC分类号： H01L29/66 ,  H01L23/532 ,  H01L21/02 ,  H01L21/04 ,  H01L29/16 ,  H01L29/786

CPC分类号： H01L29/66045 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/0228 ,  H01L21/02282 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02527 ,  H01L21/0262 ,  H01L21/02645 ,  H01L21/043 ,  H01L23/53276 ,  H01L29/1606 ,  H01L29/66015 ,  H01L29/66742 ,  H01L29/778 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/78684 ,  H01L29/78696 ,  H01L2924/0002 ,  Y10S977/734 ,  H01L2924/00

摘要： A semiconductor device including a graphene layer and a method of manufacturing the same are disclosed. A method in which graphene is grown on a catalyst metal by a chemical vapor deposition or the like is known. However, the graphene cannot be used as a channel, since the graphene is in contact with the catalyst metal, which is conductive. There is disclosed a method in which a catalyst film (2) is formed over a substrate (1), a graphene layer (3) is grown originating from the catalyst film (2), an electrode (4) in contact with the graphene layer (3) is formed, and the catalyst film (2) is removed.

公开(公告)号：US20160172507A1

公开(公告)日：2016-06-16

申请号：US14571771

申请日：2014-12-16

申请人： International Business Machines Corporation

发明人： Anthony J. Annunziata ,  Ching-Tzu Chen ,  Joel D. Chudow

IPC分类号： H01L29/786 ,  H01L29/06 ,  H01L21/02 ,  H01L21/283 ,  H01L29/66 ,  H01L29/24 ,  H01L21/04 ,  H01L51/05 ,  H01L51/00 ,  H01L21/441 ,  H01L29/16 ,  H01L29/20

CPC分类号： H01L51/0541 ,  G01N27/414 ,  G01N27/4141 ,  G01N27/4146 ,  H01L21/02527 ,  H01L21/0254 ,  H01L21/02568 ,  H01L21/02606 ,  H01L21/043 ,  H01L21/283 ,  H01L21/441 ,  H01L21/7682 ,  H01L23/53276 ,  H01L28/60 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/1606 ,  H01L29/2003 ,  H01L29/24 ,  H01L29/66045 ,  H01L29/66969 ,  H01L29/778 ,  H01L29/78684 ,  H01L29/78696 ,  H01L43/08 ,  H01L51/0048 ,  H01L51/0558 ,  H01L2221/1094

摘要： Embodiments of the invention include a method for fabricating a semiconductor device and the resulting structure. A substrate is provided. A plurality of metal portions are formed on the substrate, wherein the plurality of metal portions are arranged such that areas of the substrate remain exposed. A thin film layer is deposited on the plurality of metal portions and the exposed areas of the substrate. A dielectric layer is deposited, wherein the dielectric layer is in contact with portions of the thin film layer on the plurality of metal portions, and wherein the dielectric layer is not in contact with portions of the thin film layer on the exposed areas of the substrate such that one or more enclosed spaces are present between the thin film layer on the exposed areas of the substrate and the dielectric layer.

公开(公告)号：US09153661B2

公开(公告)日：2015-10-06

申请号：US14490391

申请日：2014-09-18

申请人： Sumitomo Electric Industries, Ltd.

发明人： Keiji Wada ,  Toru Hiyoshi

IPC分类号： H01L29/732 ,  H01L29/66 ,  H01L29/739 ,  H01L29/08 ,  H01L29/165 ,  H01L21/02 ,  H01L21/04 ,  H01L29/16

CPC分类号： H01L29/66333 ,  H01L21/02529 ,  H01L21/043 ,  H01L21/0455 ,  H01L29/0834 ,  H01L29/1608 ,  H01L29/165 ,  H01L29/66068 ,  H01L29/7393 ,  H01L29/7395

摘要： A silicon carbide substrate includes: an n type drift layer having a first surface and a second surface opposite to each other; a p type body region provided in the first surface of the n type drift layer; and an n type emitter region provided on the p type body region and separated from the n type drift layer by the p type body region. A gate insulating film is provided on the p type body region so as to connect the n type drift layer and the n type emitter region to each other. A p type Si collector layer is directly provided on the silicon carbide substrate to face the second surface of the n type drift layer.

摘要翻译： 碳化硅基板包括：n型漂移层，其具有彼此相对的第一表面和第二表面; 设置在n型漂移层的第一表面中的p型体区; 以及n型发射极区域，其设置在p型体区域上，并且通过p型体区域与n型漂移层分离。 在p型体区域上设置栅极绝缘膜，以将n型漂移层和n型发射极区域彼此连接。 p型Si集电体层直接设置在碳化硅衬底上以面对n型漂移层的第二表面。

公开(公告)号：US08933462B2

公开(公告)日：2015-01-13

申请号：US13725978

申请日：2012-12-21

申请人： Adam Khan

发明人： Adam Khan

IPC分类号： H01L29/15 ,  H01L21/768 ,  H01L29/16 ,  H01L21/04 ,  H01L29/66 ,  H01L29/868

CPC分类号： H01L21/043 ,  H01L21/02425 ,  H01L21/02527 ,  H01L21/0415 ,  H01L21/042 ,  H01L21/0435 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/324 ,  H01L21/76871 ,  H01L29/1602 ,  H01L29/36 ,  H01L29/6603 ,  H01L29/868

摘要： Disclosed herein is a new and improved system and method for fabricating diamond semiconductors. The method may include the steps of selecting a diamond semiconductor material having a surface, exposing the surface to a source gas in an etching chamber, forming a carbide interface contact layer on the surface; and forming a metal layer on the interface layer.

摘要翻译： 本文公开了一种用于制造金刚石半导体的新的和改进的系统和方法。 该方法可以包括以下步骤：选择具有表面的金刚石半导体材料，将表面暴露于蚀刻室中的源气体，在表面上形成碳化物界面接触层; 并在界面层上形成金属层。